JP2015108836A - カプセル封入ユニットを有する装置 - Google Patents
カプセル封入ユニットを有する装置 Download PDFInfo
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- JP2015108836A JP2015108836A JP2015000300A JP2015000300A JP2015108836A JP 2015108836 A JP2015108836 A JP 2015108836A JP 2015000300 A JP2015000300 A JP 2015000300A JP 2015000300 A JP2015000300 A JP 2015000300A JP 2015108836 A JP2015108836 A JP 2015108836A
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Images
Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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Abstract
【解決手段】構成部材と、当該構成部材を湿気および/または酸素に対してカプセル封入するためのカプセル封入ユニットを有しており、当該カプセル封入ユニットは、第1の層と、当該第1の層の上の第2の層を、前記構成部材の少なくとも1つの表面上に有しており、前記第1の層および前記第2の層はそれぞれ無機材料を有しており、前記第1の層は直接的に前記構成部材上に配置されており、前記第2の層は直接的に前記第1の層上に配置されている、ことを特徴とする装置。
【選択図】図1
Description
Claims (15)
- 装置であって、
・構成部材(1)と、
・当該構成部材(1)を湿気および/または酸素に対してカプセル封入するためのカプセル封入ユニット(2)を有しており、
・当該カプセル封入ユニット(2)は、第1の層(21)と、当該第1の層の上の第2の層(22)を、前記構成部材(1)の少なくとも1つの表面(19)上に有しており、
・前記第1の層(21)および前記第2の層(22)はそれぞれ無機材料を有しており、
・前記第1の層(21)は直接的に前記構成部材(1)上に配置されており、
・前記第2の層(22)は直接的に前記第1の層(21)上に配置されている、
ことを特徴とする装置。 - 装置であって、
・構成部材(1)と、
・当該構成部材(1)を湿気および/または酸素に対してカプセル封入するためのカプセル封入ユニット(2)を有しており、
・当該カプセル封入ユニット(2)は、第1の層(21)と、当該第1の層の上の第2の層(22)を、第3の層(23)上に、前記構成部材(1)の少なくとも1つの表面(19)上に有しており、
・前記第3の層(23)は直接的に前記構成部材(1)上に配置されており、
・前記第1の層(21)は直接的に前記第3の層(23)上に配置されており、
・前記第2の層(22)は直接的に前記第1の層(21)の上に配置されており、
・前記第1の層(21)および前記第2の層(22)はそれぞれ無機材料を有しており、
・前記第3の層(23)は、無定形態の無機材料を有している、
ことを特徴とする装置。 - ・前記第2の層(22)および前記第3の層(23)は同様に構成されている、請求項2記載の装置。
- 装置であって、
・構成部材(1)と、
・当該構成部材(1)を湿気および/または酸素に対してカプセル封入するためのカプセル封入ユニット(2)を有しており、
・当該カプセル封入ユニット(2)は、第1の層(21)と、当該第1の層の上の第2の層(22)を、前記構成部材(1)の少なくとも1つの表面(19)上に有しており、
・前記第1の層(21)および前記第2の層(22)はそれぞれ無機材料を有しており、
・前記第2の層(22)は直接的に前記第1の層(21)上に配置されており、
・前記カプセル封入ユニット(2)は60℃以上の温度のもとで、かつ85%以上の相対的な大気湿度のもとで、500時間以上、気密性である、
ことを特徴とする装置。 - ・前記第1の層(21)および前記第2の層(22)はそれぞれ体積体構造を有しており、
・前記第2の層(22)の体積体構造は、前記第1の層(21)の体積体構造に依存しない、請求項1から4までのいずれか1項記載の装置。 - ・前記第2の層(22)の体積体構造は、前記第1の層(21)の体積体構造よりも高い非晶質性を有している、請求項5記載の装置。
- ・前記第2の層は無定形態である、請求項1から6までのいずれか1項記載の装置。
- ・前記第2の層(22)は変化する厚さ(9)を有しており、当該厚さは前記第1の層(21)の表面構造および/または体積体構造に依存しない、請求項1から7までのいずれか1項記載の装置。
- ・前記厚さ変化は10%以下である、請求項8記載の装置。
- ・前記カプセル封入ユニット(2)は多数の第1の層(21、21’)と、多数の第2の層(22、22’)を有しており、
・前記第1の層および第2の層(21、21’、22、22’)は、交互に相互に重なって被着されている、請求項1から9までのいずれか1項記載の装置。 - ・前記カプセル封入ユニット(2)は前記構成部材(1)を完全に包囲する、請求項1から10までのいずれか1項記載の装置。
- ・前記装置は、多数のカプセル封入ユニット(2、2’)を有しており、当該カプセル封入ユニットは前記構成部材(1)の種々異なる表面上に配置されている、請求項1から11までのいずれか1項記載の装置。
- ・前記構成部材(1)は基板(10)を含んでおり、
・前記カプセル封入ユニット(2)は直接的に前記基板(10)上に被着されている、請求項1から12までのいずれか1項記載の装置。 - ・前記構成部材(1)はカバー部(17)を基板(10)上に有しており、
・前記カプセル封入ユニット(2)は、当該カバー部(17)と前記基板(10)との間に配置されている、請求項1から12までのいずれか1項記載の装置。 - ・前記カバー部(17)と前記基板(10)との間に接続材料(16)が配置されており、
・前記カプセル封入ユニット(2)は、前記基板(10)と当該接続材料(16)との間、および/または前記カバー部(17)と当該接続材料(16)との間の境界面(109、179)をカプセル封入する、請求項14記載の装置。
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DE102008019900A DE102008019900A1 (de) | 2008-01-30 | 2008-04-21 | Verfahren zur Herstellung eines organischen elektronischen Bauelements und organisches elektronisches Bauelement |
DE102008031405.6 | 2008-07-02 | ||
DE102008031405A DE102008031405A1 (de) | 2008-07-02 | 2008-07-02 | Verfahren zur Herstellung eines organischen elektronischen Bauelements und organisches elektronisches Bauelement |
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