TWI707058B - 一種物性分析試片的製備方法 - Google Patents

一種物性分析試片的製備方法 Download PDF

Info

Publication number
TWI707058B
TWI707058B TW108146591A TW108146591A TWI707058B TW I707058 B TWI707058 B TW I707058B TW 108146591 A TW108146591 A TW 108146591A TW 108146591 A TW108146591 A TW 108146591A TW I707058 B TWI707058 B TW I707058B
Authority
TW
Taiwan
Prior art keywords
physical property
property analysis
preparing
test piece
analysis test
Prior art date
Application number
TW108146591A
Other languages
English (en)
Other versions
TW202124765A (zh
Inventor
柳紀綸
陳榮欽
黃邦浩
諶昱涵
Original Assignee
汎銓科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 汎銓科技股份有限公司 filed Critical 汎銓科技股份有限公司
Priority to TW108146591A priority Critical patent/TWI707058B/zh
Priority to CN201911406718.XA priority patent/CN113013046A/zh
Application granted granted Critical
Publication of TWI707058B publication Critical patent/TWI707058B/zh
Priority to US17/071,002 priority patent/US11604153B2/en
Priority to JP2020208983A priority patent/JP2021099329A/ja
Publication of TW202124765A publication Critical patent/TW202124765A/zh

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45555—Atomic layer deposition [ALD] applied in non-semiconductor technology
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

本發明乃揭示一種物性分析試片的製備方法，其步驟包括：提供一欲進行物性分析的樣品；以及形成一低溫原子層沉積(Atomic Layer Deposition, ALD)薄膜於該欲進行物性分析的樣品表面，製備出一物性分析試片。

Description

一種物性分析試片的製備方法
本發明是關於一種試片的準備方法，且特別是關一種物性分析試片的製備方法。
隨著積體電路的線寬逐漸縮小，製程中的前一個製程步驟中出現的缺陷往往對下一個製程步驟的良率產生極大的影響，故精確地掌握相關缺陷便是積體電路製程中必須面對的嚴肅議題。
目前最常被用以進行故障分析的儀器主要是電子顯微鏡，例如穿透式電子顯微鏡(TEM)、掃描式電子顯微鏡(SEM)以及聚焦離子束電子顯微鏡(FIB)。其中，適用於穿透式電子顯微鏡(TEM)觀察的樣品必須先以物理研磨、化學蝕刻或利用聚焦離子束將樣品厚度減薄至一定程度才能進行觀察，惟樣品的細部結構可能會在物理研磨、化學研磨或聚焦離子術減薄過程中被損壞而導致缺陷分析失真的風險。
此外，在利用聚焦離子束將樣品厚度減薄前，通常會先在樣品表面鍍上一金屬保護層，惟此金屬保護層可能會與樣品表面產生質量干擾，導致在後續利用聚焦離子束將樣品厚度減薄過程中造成樣品表面破裂或崩壞，導製故障分析樣品製作失敗。再者，無論是利用物理氣相沉積法(PVD)或化學氣相沉積法(CVD)在樣品表面鍍上一金屬保護膜的製程，其製程溫度均高於40℃，對於 生物性樣品，例如但不限於食品等，或者材質較軟的樣品，例如但不限於光阻、膠材等，此鍍膜過程將會樣品表面造成損傷，不利於後續的故障分析。
有鑑於此，一種可改善上述缺點的物性分析試片的製備方法乃目前業界所殷切期盼。
本發明之一特徵是揭示一種物性分析試片的製備方法，其步驟包括：提供一欲進行物性分析的樣品；以及形成一低溫原子層沉積(Atomic Layer Deposition,ALD)薄膜於該欲進行物性分析的樣品表面，製備出一物性分析試片。
如上所述的物性分析試片的製備方法，該低溫原子層沉積(Atomic Layer Deposition,ALD)薄膜是利用無電漿輔助的原子層沉積法於溫度低於40ºC條件下沉積獲得。
如上所述的物性分析試片的製備方法，其中該低溫原子層沉積(Atomic Layer Deposition,ALD)薄膜為金屬氧化物、金屬氮化物或金屬氮氧化物。
如上所述的物性分析試片的製備方法，該金屬氧化物為氧化鈦(TiO2)、氧化鋁(Al2O3)、氧化鉿(HfO2)、氧化鉑(PtO2)、銦錫氧化物(ITO)、銦鎵鋯氧化物(IGZO)。
如上所述的物性分析試片的製備方法，該金屬氮化物為氮化鋁(AlN)、氮化鉬(MoN)、氮化鈦(TiN)、氮化鉭(TaN)。
如上所述的物性分析試片的製備方法，該金屬氮氧化物為氮氧化鉭(TaON)。
如上所述的物性分析試片的製備方法，更包括一步驟，使該物性分析試片表面的該低溫原子層沉積(Atomic Layer Deposition,ALD)薄膜被施以一減薄處理。
如上所述的物性分析試片的製備方法，該減薄處理步驟是利用一聚焦離子束系統進行。
10、20:樣品
100、200:基板
100A、200A:上表面
100B、200B:下表面
110、210:結構
150、250:低溫原子層沉積(Atomic Layer Deposition,ALD)薄膜
250’:減薄的低溫原子層沉積(Atomic Layer Deposition,ALD)薄膜
1000、2000:物性分析試片
第1A~1B圖所繪示的是根據本發明一實施例所揭示的方法以製備一物性分析試片1000的剖面製程。
第2A~2C圖所繪示的是根據本發明另一實施例所揭示的方法以製備另一物性分析試片2000的剖面製程。
為了使本發明揭示內容的敘述更加詳盡與完備，下文針對了本發明的實施態樣與具體實施例提出了說明性的描述；但這並非實施或運用本發明具體實施例的唯一形式。以下所揭露的各實施例，在有益的情形下可相互組合或取代，也可在一實施例中附加其他的實施例，而無須進一步的記載或說明。
在以下描述中，將詳細敘述許多特定細節以使讀者能夠充分理解以下的實施例。然而，可在無此等特定細節之情況下實踐本發明之實施例。在其他情況下，為簡化圖式，熟知的結構與裝置僅示意性地繪示於圖中。
實施例
實施例一
請參閱第1A~1B圖，其所繪示的是根據本發明一實施例所揭示的方法以製備一物性分析試片1000的剖面製程。
首先，如第1A圖所示，提供一待進行物性分析的樣品10，其中該樣品10包括一基板100，該基板100具有相對的上、下表面100A、100B，且該上表面100A上具有複數結構110。
其次，如第1B圖所示，形成一厚度為例如但不限於-5Å~600Å的低溫原子層沉積(Atomic Layer Deposition,ALD)薄膜150於該欲進行物性分析的樣品10的上表面100A，並且覆蓋該等結構110，製備出一物性分析試片1000，可供後續的物性分析檢測，例如以電子顯微鏡例如但不限於掃描式電子顯微鏡(SEM)、穿透式電子顯微鏡(TEM)或聚焦離子束電子顯微鏡(FIB)進行後續觀察。
其中，上述的低溫原子層沉積(Atomic Layer Deposition,ALD)薄膜150是利用無電漿輔助的原子層沉積法(Atomic Layer Deposition,ALD)於溫度低於40℃條件下沉積獲得。此外，上述的低溫原子層沉積(Atomic Layer Deposition,ALD)薄膜150為例如但不限於金屬氧化物、金屬氮化物、金屬氮氧化物。
在根據本發明一實施例中，上述的金屬氧化物為例如但不限於氧化鈦(TiO2)、氧化鋁(Al2O3)、氧化鉿(HfO2)、氧化鉑(PtO2)、銦錫氧化物(ITO)、銦鎵鋯氧化物(IGZO)。
在根據本發明一實施例中，上述的金屬氮化物為例如但不限於氮化鋁(AlN)、氮化鉬(MoN)、氮化鈦(TiN)、氮化鉭(TaN)。
在根據本發明一實施例中，上述的金屬氮氧化物為例如但不限於氮氧化鉭(TaON)。
實施例二
請參閱第2A~2C圖，其所繪示的是根據本發明另一實施例所揭示的方法以製備另一物性分析試片2000的剖面製程。
首先，如第2A圖所示，提供一待進行物性分析的樣品20，其中該樣品20包括一基板200，該基板200具有相對的上、下表面200A、200B，且該上表面200A上具有複數結構210。
其次，如第2B圖所示，形成一厚度為例如但不限於5Å~600Å的低溫原子層沉積(Atomic Layer Deposition,ALD)薄膜250於該欲進行物性分析的樣品20的上表面200A，並且覆蓋該等結構210。其中，上述的低溫原子層沉積(Atomic Layer Deposition,ALD)薄膜150是利用無電漿輔助的原子層沉積法(Atomic Layer Deposition,ALD)於溫度低於40℃條件下沉積獲得。此外，上述的低溫原子層沉積(Atomic Layer Deposition,ALD)薄膜150為例如但不限於金屬氧化物、金屬氮化物、金屬氮氧化物。
接著，如第2C圖所示，利用離子束系統對該低溫原子層沉積(Atomic Layer Deposition,ALD)薄膜250施以一減薄處理，形成一減薄的低溫原子層沉積(Atomic Layer Deposition,ALD)薄膜250於該欲進行物性分析的樣品20的上表面200A，並且覆蓋該等結構210，製備出一物性分析試片2000，可供後續的物性分析檢測，例如以電子顯微鏡例如但不限於掃描式電子顯微鏡(SEM)、穿透式電子顯微鏡(TEM)或聚焦離子束電子顯微鏡(FIB)進行後續觀察。。
在根據本發明一實施例中，上述的金屬氧化物為例如但不限於氧化鈦(TiO2)、氧化鋁(Al2O3)、氧化鉿(HfO2)、氧化鉑(PtO2)、銦錫氧化物(ITO)、銦鎵鋯氧化物(IGZO)。
在根據本發明一實施例中，上述的金屬氮化物為例如但不限於氮化鋁(AlN)、氮化鉬(MoN)、氮化鈦(TiN)、氮化鉭(TaN)。
在根據本發明一實施例中，上述的金屬氮氧化物為例如但不限於氮氧化鉭(TaON)。
綜上所述，利用本發明所揭示的物性分析試片的製備方法，藉由在待進行物性分析的樣品表面形成一低溫原子層沉積(ALD)薄膜，便可改善以往樣品製備的缺點，使生物性樣品或材質較軟的樣品表面在鍍膜後不會受到高溫造成的損害，故可使後續利用電子顯微鏡的故障分析更精確。
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
10:樣品
100:基板
100A:上表面
100B:下表面
110:結構
150:低溫原子層沉積(Atomic Layer Deposition,ALD)薄膜
1000:物性分析試片

Claims (7)

  1. 一種物性分析試片的製備方法，其步驟包括：提供一欲進行物性分析的樣品；以及形成一低溫原子層沉積(Atomic Layer Deposition,ALD)薄膜於該欲進行物性分析的樣品表面，製備出一物性分析試片；其中，該低溫原子層沉積(Atomic Layer Deposition,ALD)薄膜是利用無電漿輔助的原子層沉積法於溫度低於40℃條件下沉積獲得。
  2. 如請求項1所述的物性分析試片的製備方法，其中該低溫原子層沉積(Atomic Layer Deposition,ALD)薄膜為金屬氧化物、金屬氮化物、金屬氮氧化物。
  3. 如請求項2所述的物性分析試片的製備方法，該金屬氧化物為氧化鈦(TiO2)、氧化鋁(Al2O3)、氧化鉿(HfO2)、氧化鉑(PtO2)、銦錫氧化物(ITO)、銦鎵鋯氧化物(IGZO)。
  4. 如請求項2所述的物性分析試片的製備方法，該金屬氮化物為氮化鋁(AlN)、氮化鉬(MoN)、氮化鈦(TiN)、氮化鉭(TaN)。
  5. 如請求項2所述的物性分析試片的製備方法，該金屬氮氧化物為氮氧化鉭(TaON)。
  6. 如請求項1至5中任一項所述的物性分析試片的製備方法，更包括一步驟，使該物性分析試片表面的該低溫原子層沉積(Atomic Layer Deposition,ALD)薄膜被施以一減薄處理。
  7. 如請求項6所述的物性分析試片的製備方法，該減薄處理步驟是利用一聚焦離子束系統進行。
TW108146591A 2019-12-19 2019-12-19 一種物性分析試片的製備方法 TWI707058B (zh)

Priority Applications (4)

Application Number Priority Date Filing Date Title
TW108146591A TWI707058B (zh) 2019-12-19 2019-12-19 一種物性分析試片的製備方法
CN201911406718.XA CN113013046A (zh) 2019-12-19 2019-12-31 一种物性分析试片的制备方法
US17/071,002 US11604153B2 (en) 2019-12-19 2020-10-15 Method of preparing a sample for physical analysis
JP2020208983A JP2021099329A (ja) 2019-12-19 2020-12-17 物理的解析用サンプルを調製する方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW108146591A TWI707058B (zh) 2019-12-19 2019-12-19 一種物性分析試片的製備方法

Publications (2)

Publication Number Publication Date
TWI707058B true TWI707058B (zh) 2020-10-11
TW202124765A TW202124765A (zh) 2021-07-01

Family

ID=74091681

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108146591A TWI707058B (zh) 2019-12-19 2019-12-19 一種物性分析試片的製備方法

Country Status (4)

Country Link
US (1) US11604153B2 (zh)
JP (1) JP2021099329A (zh)
CN (1) CN113013046A (zh)
TW (1) TWI707058B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113189370A (zh) * 2021-05-28 2021-07-30 上海华力微电子有限公司 Tem样品的制备方法
TWI762189B (zh) * 2021-02-09 2022-04-21 汎銓科技股份有限公司 一種利用導電原子層沉積保護膜製備物性分析試片的方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022058178A (ja) * 2020-09-30 2022-04-11 株式会社住化分析センター 試料の製造方法、及び試料の観察方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105241910A (zh) * 2015-08-07 2016-01-13 南京大学 一种固体氧化物表面结构的测定方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030088750A (ko) * 2002-05-15 2003-11-20 삼성전자주식회사 저온에서 질화막을 형성하는 고집적 디바이스의 제조 방법
KR100459724B1 (ko) * 2002-09-11 2004-12-03 삼성전자주식회사 저온 원자층증착에 의한 질화막을 식각저지층으로이용하는 반도체 소자 및 그 제조방법
US6967137B2 (en) * 2003-07-07 2005-11-22 International Business Machines Corporation Forming collar structures in deep trench capacitors with thermally stable filler material
KR100587686B1 (ko) * 2004-07-15 2006-06-08 삼성전자주식회사 질화 티타늄막 형성방법 및 이를 이용한 커패시터 제조방법
WO2008136882A2 (en) * 2007-02-14 2008-11-13 The Board Of Trustees Of The Leland Stanford Junior University Fabrication method of size-controlled, spatially distributed nanostructures by atomic layer deposition
TWI420722B (zh) * 2008-01-30 2013-12-21 Osram Opto Semiconductors Gmbh 具有封裝單元之裝置
US8274777B2 (en) * 2008-04-08 2012-09-25 Micron Technology, Inc. High aspect ratio openings
JP2011198885A (ja) * 2010-03-18 2011-10-06 Mitsui Eng & Shipbuild Co Ltd 原子層堆積装置及び原子層堆積方法
JP2011199197A (ja) * 2010-03-23 2011-10-06 Toshiba Corp 半導体記憶装置
WO2013177326A1 (en) * 2012-05-25 2013-11-28 Advanced Technology Materials, Inc. Silicon precursors for low temperature ald of silicon-based thin-films
JP2014157123A (ja) * 2013-02-18 2014-08-28 Toshiba Corp 試料、試料作成装置および試料観察方法
US20170005365A1 (en) * 2015-07-02 2017-01-05 Panasonic Intellectual Property Management Co., Ltd. Oxynitride film containing metal element and network former
LU92795B1 (en) * 2015-08-10 2017-02-14 Luxembourg Inst Science & Tech List SIO2 thin film produced by atomic layer deposition at room temperature
US10975469B2 (en) * 2017-03-17 2021-04-13 Applied Materials, Inc. Plasma resistant coating of porous body by atomic layer deposition
US20190078206A1 (en) * 2017-09-08 2019-03-14 Applied Materials, Inc. Fluorinated rare earth oxide ald coating for chamber productivity enhancement
EP3456859A1 (en) * 2017-09-13 2019-03-20 Rolex Sa Protective coating for a complex watch component
US11311491B2 (en) * 2018-01-16 2022-04-26 Applied Materials, Inc. Metal oxide encapsulated drug compositions and methods of preparing the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105241910A (zh) * 2015-08-07 2016-01-13 南京大学 一种固体氧化物表面结构的测定方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI762189B (zh) * 2021-02-09 2022-04-21 汎銓科技股份有限公司 一種利用導電原子層沉積保護膜製備物性分析試片的方法
CN113189370A (zh) * 2021-05-28 2021-07-30 上海华力微电子有限公司 Tem样品的制备方法

Also Published As

Publication number Publication date
JP2021099329A (ja) 2021-07-01
US11604153B2 (en) 2023-03-14
CN113013046A (zh) 2021-06-22
TW202124765A (zh) 2021-07-01
US20210190707A1 (en) 2021-06-24

Similar Documents

Publication Publication Date Title
TWI707058B (zh) 一種物性分析試片的製備方法
US7538322B2 (en) Method of fabricating sample membranes for transmission electron microscopy analysis
US7525087B2 (en) Method for creating observational sample
US9287175B2 (en) Fabrication method for dicing of semiconductor wafers using laser cutting techniques
US9666727B2 (en) Display device
CN102810561A (zh) 半导体器件及其制造方法
US20090166535A1 (en) Transmission electron microscopy analysis method using focused ion beam and transmission electron microscopy sample structure
CN103645075A (zh) Tem样品的制作方法及其tem样品
TWI658262B (zh) 用於物性故障分析的試片之製作方法
TWI697402B (zh) 保護層與其製造方法及用途
CN113299819B (zh) 一种超导转变边探测器及其制备方法
US20020134938A1 (en) Method of sample preparation for transmission electron microscope analysis
CN106289892B (zh) 一种tem样品制备方法
CN104458371A (zh) 一种tem样品的制备方法
Khemis et al. Structural analysis of sputtered amorphous silica thin films: A Raman spectroscopy investigation
US20180144997A1 (en) Sample with improved effect of backside positioning, fabrication method and analysis method thereof
CN113030674A (zh) 用于失效分析的样品的处理方法及失效分析方法
US8367545B2 (en) System and method for monitoring copper barrier layer preclean process
CN112310257B (zh) 保护层与其制造方法及用途
TW200413711A (en) Method of exposing desired layers in a multi-layer semiconductor using focused ion beams for physical failure
TWI762189B (zh) 一種利用導電原子層沉積保護膜製備物性分析試片的方法
TW201836077A (zh) 半導體裝置及其製造方法
KR101757400B1 (ko) 금속 옥사이드 반도체 ｔｆｔ용 유전체 막들의 핀홀 평가 방법
TWI759053B (zh) 一種利用導電膠保護膜製備物性分析試片的方法
TWI738568B (zh) 一種故障分析用的半導體試片的製備方法