FR2701166B1 - Transistor a effet de champ et procede pour la fabrication d'un tel transistor. - Google Patents
Transistor a effet de champ et procede pour la fabrication d'un tel transistor.Info
- Publication number
- FR2701166B1 FR2701166B1 FR9310400A FR9310400A FR2701166B1 FR 2701166 B1 FR2701166 B1 FR 2701166B1 FR 9310400 A FR9310400 A FR 9310400A FR 9310400 A FR9310400 A FR 9310400A FR 2701166 B1 FR2701166 B1 FR 2701166B1
- Authority
- FR
- France
- Prior art keywords
- transistor
- manufacturing
- field effect
- effect transistor
- field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7843—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being an applied insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/938—Lattice strain control or utilization
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Junction Field-Effect Transistors (AREA)
- Drying Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9410496A FR2709378B1 (fr) | 1993-01-29 | 1994-08-31 | Transistor à effet de champ et procédé pour la fabrication d'un tel transistor. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5013607A JPH06232170A (ja) | 1993-01-29 | 1993-01-29 | 電界効果トランジスタ及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2701166A1 FR2701166A1 (fr) | 1994-08-05 |
FR2701166B1 true FR2701166B1 (fr) | 1995-11-24 |
Family
ID=11837922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9310400A Expired - Fee Related FR2701166B1 (fr) | 1993-01-29 | 1993-08-31 | Transistor a effet de champ et procede pour la fabrication d'un tel transistor. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5471073A (fr) |
JP (1) | JPH06232170A (fr) |
FR (1) | FR2701166B1 (fr) |
GB (1) | GB2274944B (fr) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0822998A (ja) * | 1994-07-06 | 1996-01-23 | Mitsubishi Electric Corp | 半導体装置、及びその製造方法 |
JPH0982726A (ja) * | 1995-09-12 | 1997-03-28 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
AU747878B2 (en) * | 1998-04-09 | 2002-05-30 | California Institute Of Technology | Electronic techniques for analyte detection |
JP4022708B2 (ja) * | 2000-06-29 | 2007-12-19 | 日本電気株式会社 | 半導体装置 |
JP4597479B2 (ja) * | 2000-11-22 | 2010-12-15 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
JP2003086708A (ja) | 2000-12-08 | 2003-03-20 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP2003023015A (ja) | 2001-07-06 | 2003-01-24 | Mitsubishi Electric Corp | GaAs系半導体電界効果トランジスタ |
JP4173672B2 (ja) * | 2002-03-19 | 2008-10-29 | 株式会社ルネサステクノロジ | 半導体装置及びその製造方法 |
JP4030383B2 (ja) | 2002-08-26 | 2008-01-09 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
US6943391B2 (en) * | 2003-11-21 | 2005-09-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Modification of carrier mobility in a semiconductor device |
EP1879645A4 (fr) * | 2005-04-28 | 2009-11-04 | California Inst Of Techn | Systemes de protheses retiniennes intra-oculaires souples fabriquees par lots, et leur procede de fabrication |
US7498270B2 (en) * | 2005-09-30 | 2009-03-03 | Tokyo Electron Limited | Method of forming a silicon oxynitride film with tensile stress |
JP2007305666A (ja) | 2006-05-09 | 2007-11-22 | Toshiba Corp | 半導体装置およびその製造方法 |
JP5478295B2 (ja) * | 2010-02-19 | 2014-04-23 | ラピスセミコンダクタ株式会社 | 半導体装置の製造方法 |
KR101774933B1 (ko) * | 2010-03-02 | 2017-09-06 | 삼성전자 주식회사 | 듀얼 디플리션을 나타내는 고 전자 이동도 트랜지스터 및 그 제조방법 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2834724A1 (de) * | 1978-08-08 | 1980-02-14 | Siemens Ag | Mos-feldeffekttransistoren fuer hoehere spannungen |
JPS5852881A (ja) * | 1981-09-25 | 1983-03-29 | Oki Electric Ind Co Ltd | 半導体素子の製造方法 |
JPS6161465A (ja) * | 1984-09-03 | 1986-03-29 | Hitachi Ltd | Mos形電界効果トランジスタおよびその製造方法 |
DE3581159D1 (de) * | 1984-10-08 | 1991-02-07 | Fujitsu Ltd | Halbleiteranordnung mit integrierter schaltung. |
JPS61123187A (ja) * | 1984-11-09 | 1986-06-11 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS61129878A (ja) * | 1984-11-29 | 1986-06-17 | Fujitsu Ltd | 半導体装置 |
US4777517A (en) * | 1984-11-29 | 1988-10-11 | Fujitsu Limited | Compound semiconductor integrated circuit device |
JPS62190768A (ja) * | 1986-02-17 | 1987-08-20 | Fujitsu Ltd | 半導体装置 |
JPH01204476A (ja) * | 1988-02-09 | 1989-08-17 | Nec Corp | 半導体装置及びその製造方法 |
JP2544781B2 (ja) * | 1988-07-20 | 1996-10-16 | 沖電気工業株式会社 | 半導体素子の製造方法 |
JP2562840B2 (ja) * | 1988-08-01 | 1996-12-11 | 富士通株式会社 | 電界効果トランジスタ |
JP2553690B2 (ja) * | 1989-02-13 | 1996-11-13 | 三菱電機株式会社 | 非対称構造fetの製造方法 |
-
1993
- 1993-01-29 JP JP5013607A patent/JPH06232170A/ja active Pending
- 1993-08-04 GB GB9316182A patent/GB2274944B/en not_active Expired - Fee Related
- 1993-08-31 FR FR9310400A patent/FR2701166B1/fr not_active Expired - Fee Related
- 1993-09-01 US US08/114,369 patent/US5471073A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
GB2274944A (en) | 1994-08-10 |
JPH06232170A (ja) | 1994-08-19 |
GB9316182D0 (en) | 1993-09-22 |
GB2274944B (en) | 1997-04-23 |
US5471073A (en) | 1995-11-28 |
FR2701166A1 (fr) | 1994-08-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |