FR2676864B1 - Procede de fabrication de transistor mos a recouvrement grille-drain et structure correspondante. - Google Patents

Procede de fabrication de transistor mos a recouvrement grille-drain et structure correspondante.

Info

Publication number
FR2676864B1
FR2676864B1 FR9109790A FR9109790A FR2676864B1 FR 2676864 B1 FR2676864 B1 FR 2676864B1 FR 9109790 A FR9109790 A FR 9109790A FR 9109790 A FR9109790 A FR 9109790A FR 2676864 B1 FR2676864 B1 FR 2676864B1
Authority
FR
France
Prior art keywords
grille
mos transistor
corresponding structure
manufacturing mos
drain overlay
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9109790A
Other languages
English (en)
Other versions
FR2676864A1 (fr
Inventor
Young-Seck Choi
Tae-Young Won
Kwang-Dong Yu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2676864A1 publication Critical patent/FR2676864A1/fr
Application granted granted Critical
Publication of FR2676864B1 publication Critical patent/FR2676864B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7836—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a significant overlap between the lightly doped extension and the gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FR9109790A 1991-05-23 1991-08-01 Procede de fabrication de transistor mos a recouvrement grille-drain et structure correspondante. Expired - Lifetime FR2676864B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910008363A KR940005293B1 (ko) 1991-05-23 1991-05-23 게이트와 드레인이 중첩된 모오스 트랜지스터의 제조방법 및 그 구조

Publications (2)

Publication Number Publication Date
FR2676864A1 FR2676864A1 (fr) 1992-11-27
FR2676864B1 true FR2676864B1 (fr) 1998-08-14

Family

ID=19314806

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9109790A Expired - Lifetime FR2676864B1 (fr) 1991-05-23 1991-08-01 Procede de fabrication de transistor mos a recouvrement grille-drain et structure correspondante.

Country Status (6)

Country Link
US (2) US5256586A (fr)
JP (1) JP2662325B2 (fr)
KR (1) KR940005293B1 (fr)
DE (1) DE4127967C2 (fr)
FR (1) FR2676864B1 (fr)
GB (1) GB2256088B (fr)

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TW203148B (fr) * 1991-03-27 1993-04-01 American Telephone & Telegraph
US5401994A (en) * 1991-05-21 1995-03-28 Sharp Kabushiki Kaisha Semiconductor device with a non-uniformly doped channel
JP2739018B2 (ja) * 1992-10-21 1998-04-08 三菱電機株式会社 誘電体分離半導体装置及びその製造方法
JP3039200B2 (ja) * 1993-06-07 2000-05-08 日本電気株式会社 Ｍｏｓトランジスタおよびその製造方法
US5371396A (en) * 1993-07-02 1994-12-06 Thunderbird Technologies, Inc. Field effect transistor having polycrystalline silicon gate junction
US5397722A (en) * 1994-03-15 1995-03-14 National Semiconductor Corporation Process for making self-aligned source/drain polysilicon or polysilicide contacts in field effect transistors
US5451532A (en) * 1994-03-15 1995-09-19 National Semiconductor Corp. Process for making self-aligned polysilicon base contact in a bipolar junction transistor
JP3072754B2 (ja) * 1994-10-18 2000-08-07 シャープ株式会社 半導体装置の製造方法
US5543643A (en) * 1995-07-13 1996-08-06 Lsi Logic Corporation Combined JFET and MOS transistor device, circuit
US5714413A (en) * 1995-12-11 1998-02-03 Intel Corporation Method of making a transistor having a deposited dual-layer spacer structure
US5817561A (en) * 1996-09-30 1998-10-06 Motorola, Inc. Insulated gate semiconductor device and method of manufacture
US5879999A (en) * 1996-09-30 1999-03-09 Motorola, Inc. Method of manufacturing an insulated gate semiconductor device having a spacer extension
JP3762002B2 (ja) * 1996-11-29 2006-03-29 株式会社東芝 薄膜トランジスタ、及び液晶表示装置
JP2002509649A (ja) 1997-07-11 2002-03-26 テレフオンアクチーボラゲツト エル エム エリクソン 高周波で使用されるｉｃ部品を製造するためのプロセス
TW387151B (en) * 1998-02-07 2000-04-11 United Microelectronics Corp Field effect transistor structure of integrated circuit and the manufacturing method thereof
US6236086B1 (en) * 1998-04-20 2001-05-22 Macronix International Co., Ltd. ESD protection with buried diffusion
TW363272B (en) * 1998-04-20 1999-07-01 United Microelectronics Corp Manufacturing method of capacitors used for memory cells of DRAM
US6200843B1 (en) 1998-09-24 2001-03-13 International Business Machines Corporation High-voltage, high performance FETs
US6124172A (en) * 1998-09-30 2000-09-26 Advanced Micro Devices, Inc. Method of making a semiconductor device having source/drain structures with self-aligned heavily-doped and lightly-doped regions
US6492695B2 (en) 1999-02-16 2002-12-10 Koninklijke Philips Electronics N.V. Semiconductor arrangement with transistor gate insulator
US6097070A (en) * 1999-02-16 2000-08-01 International Business Machines Corporation MOSFET structure and process for low gate induced drain leakage (GILD)
US6274446B1 (en) 1999-09-28 2001-08-14 International Business Machines Corporation Method for fabricating abrupt source/drain extensions with controllable gate electrode overlap
DE10056873B4 (de) * 2000-11-16 2010-06-17 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung einer Gateelektrode eines Feldeffekttransistors mit verringertem Gatewiderstand
US6888198B1 (en) * 2001-06-04 2005-05-03 Advanced Micro Devices, Inc. Straddled gate FDSOI device
US6533692B1 (en) * 2001-10-19 2003-03-18 New Venture Gear, Inc. Drivetrain with hybrid transfer case
US6727534B1 (en) * 2001-12-20 2004-04-27 Advanced Micro Devices, Inc. Electrically programmed MOS transistor source/drain series resistance
US6909145B2 (en) * 2002-09-23 2005-06-21 International Business Machines Corporation Metal spacer gate for CMOS FET
US6841826B2 (en) * 2003-01-15 2005-01-11 International Business Machines Corporation Low-GIDL MOSFET structure and method for fabrication
US7968932B2 (en) * 2005-12-26 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9608066B1 (en) * 2015-09-29 2017-03-28 International Business Machines Corporation High-K spacer for extension-free CMOS devices with high mobility channel materials
US10079290B2 (en) * 2016-12-30 2018-09-18 United Microelectronics Corp. Semiconductor device having asymmetric spacer structures

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Also Published As

Publication number Publication date
DE4127967C2 (de) 1998-07-02
FR2676864A1 (fr) 1992-11-27
US5256586A (en) 1993-10-26
US5621236A (en) 1997-04-15
GB9117932D0 (en) 1991-10-09
DE4127967A1 (de) 1992-11-26
KR940005293B1 (ko) 1994-06-15
GB2256088A (en) 1992-11-25
GB2256088B (en) 1995-10-18
KR920022372A (ko) 1992-12-19
JPH04346440A (ja) 1992-12-02
JP2662325B2 (ja) 1997-10-08

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