FR2696873B1 - Transistor à effet de champ et procédé pour sa fabrication. - Google Patents
Transistor à effet de champ et procédé pour sa fabrication.Info
- Publication number
- FR2696873B1 FR2696873B1 FR9311688A FR9311688A FR2696873B1 FR 2696873 B1 FR2696873 B1 FR 2696873B1 FR 9311688 A FR9311688 A FR 9311688A FR 9311688 A FR9311688 A FR 9311688A FR 2696873 B1 FR2696873 B1 FR 2696873B1
- Authority
- FR
- France
- Prior art keywords
- manufacture
- field effect
- effect transistor
- transistor
- field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
- H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
- H01L29/66863—Lateral single gate transistors
- H01L29/66871—Processes wherein the final gate is made after the formation of the source and drain regions in the active layer, e.g. dummy-gate processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
- H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0891—Source or drain regions of field-effect devices of field-effect transistors with Schottky gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
- H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
- H01L29/66863—Lateral single gate transistors
- H01L29/66878—Processes wherein the final gate is made before the formation, e.g. activation anneal, of the source and drain regions in the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
- H01L29/8128—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with recessed gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29813692 | 1992-10-09 | ||
JP5055252A JPH06177159A (ja) | 1992-10-09 | 1993-03-16 | 電界効果トランジスタ及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2696873A1 FR2696873A1 (fr) | 1994-04-15 |
FR2696873B1 true FR2696873B1 (fr) | 1994-12-23 |
Family
ID=26396137
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9311688A Expired - Fee Related FR2696873B1 (fr) | 1992-10-09 | 1993-09-30 | Transistor à effet de champ et procédé pour sa fabrication. |
Country Status (4)
Country | Link |
---|---|
US (2) | US5486710A (fr) |
JP (1) | JPH06177159A (fr) |
DE (1) | DE4334427C2 (fr) |
FR (1) | FR2696873B1 (fr) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0822998A (ja) * | 1994-07-06 | 1996-01-23 | Mitsubishi Electric Corp | 半導体装置、及びその製造方法 |
JPH0936133A (ja) * | 1995-07-14 | 1997-02-07 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP3640272B2 (ja) * | 1996-02-09 | 2005-04-20 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP2809189B2 (ja) * | 1996-04-25 | 1998-10-08 | 日本電気株式会社 | 半導体トランジスタの製造方法 |
US5895941A (en) * | 1996-07-01 | 1999-04-20 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor with electrode portions under T-shaped gate structure |
US5731608A (en) * | 1997-03-07 | 1998-03-24 | Sharp Microelectronics Technology, Inc. | One transistor ferroelectric memory cell and method of making the same |
JPH10335595A (ja) * | 1997-03-31 | 1998-12-18 | Sharp Corp | 増幅器用半導体素子、増幅器用半導体素子の製造方法および増幅器用半導体装置 |
US6262444B1 (en) * | 1997-04-23 | 2001-07-17 | Nec Corporation | Field-effect semiconductor device with a recess profile |
JP2003023015A (ja) | 2001-07-06 | 2003-01-24 | Mitsubishi Electric Corp | GaAs系半導体電界効果トランジスタ |
JP3682920B2 (ja) * | 2001-10-30 | 2005-08-17 | 富士通株式会社 | 半導体装置の製造方法 |
US6841832B1 (en) * | 2001-12-19 | 2005-01-11 | Advanced Micro Devices, Inc. | Array of gate dielectric structures to measure gate dielectric thickness and parasitic capacitance |
DE10304722A1 (de) | 2002-05-11 | 2004-08-19 | United Monolithic Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements |
EP2114983B8 (fr) * | 2007-02-07 | 2015-02-18 | The Regents of the University of Colorado, A Body Corporate | Inhibiteurs des recepteurs axl a activite tyrosine kinase et procedes de fabrication et d'utilisation de ceux-ci |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4244097A (en) * | 1979-03-15 | 1981-01-13 | Hughes Aircraft Company | Schottky-gate field-effect transistor and fabrication process therefor |
JPS5728322A (en) * | 1980-07-28 | 1982-02-16 | Fujitsu Ltd | Formation of semiconductor single crystal layer |
JPS58147170A (ja) * | 1982-02-26 | 1983-09-01 | Fujitsu Ltd | 電界効果トランジスタの製造方法 |
JPS6086866A (ja) * | 1983-10-19 | 1985-05-16 | Matsushita Electronics Corp | 電界効果トランジスタおよびその製造方法 |
JPS61214473A (ja) * | 1985-03-19 | 1986-09-24 | Sony Corp | 電界効果型トランジスタ |
JPS61295670A (ja) * | 1985-06-25 | 1986-12-26 | Toshiba Corp | GaAs半導体装置の製造方法 |
JPS6461063A (en) * | 1987-09-01 | 1989-03-08 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
JPH01161873A (ja) * | 1987-12-18 | 1989-06-26 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH023938A (ja) * | 1988-06-20 | 1990-01-09 | Mitsubishi Electric Corp | 電界効果トランジスタ |
US5091759A (en) * | 1989-10-30 | 1992-02-25 | Texas Instruments Incorporated | Heterostructure field effect transistor |
JPH02139941A (ja) * | 1988-11-21 | 1990-05-29 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPH02222549A (ja) * | 1989-02-23 | 1990-09-05 | Murata Mfg Co Ltd | 半導体装置の構造 |
JPH02253632A (ja) * | 1989-03-27 | 1990-10-12 | Matsushita Electric Ind Co Ltd | 電界効果型トランジスタの製造方法 |
FR2646290B1 (fr) * | 1989-04-25 | 1991-06-14 | Thomson Csf | Composant semiconducteur de type mesfet a heterojonction pseudomorphique |
JPH02291120A (ja) * | 1989-04-28 | 1990-11-30 | Nec Corp | GaAs電界郊果トランジスタの製法 |
JPH03192732A (ja) * | 1989-12-21 | 1991-08-22 | Nec Corp | 3―v族半導体電界効果トランジスタ |
US5028968A (en) * | 1990-01-02 | 1991-07-02 | The Aerospace Corporation | Radiation hard GaAs high electron mobility transistor |
JPH0493038A (ja) * | 1990-08-09 | 1992-03-25 | Toshiba Corp | 電界効果トランジスタ |
JP2523985B2 (ja) * | 1990-11-16 | 1996-08-14 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP2549206B2 (ja) * | 1990-12-27 | 1996-10-30 | 住友電気工業株式会社 | 電界効果トランジスタ |
-
1993
- 1993-03-16 JP JP5055252A patent/JPH06177159A/ja active Pending
- 1993-09-30 FR FR9311688A patent/FR2696873B1/fr not_active Expired - Fee Related
- 1993-10-08 DE DE4334427A patent/DE4334427C2/de not_active Expired - Fee Related
-
1995
- 1995-02-07 US US08/385,089 patent/US5486710A/en not_active Expired - Fee Related
- 1995-11-03 US US08/552,869 patent/US5585289A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5585289A (en) | 1996-12-17 |
US5486710A (en) | 1996-01-23 |
DE4334427A1 (de) | 1994-04-14 |
FR2696873A1 (fr) | 1994-04-15 |
DE4334427C2 (de) | 1998-03-19 |
JPH06177159A (ja) | 1994-06-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
D6 | Patent endorsed licences of rights | ||
ST | Notification of lapse |