FR2696873B1 - Transistor à effet de champ et procédé pour sa fabrication. - Google Patents

Transistor à effet de champ et procédé pour sa fabrication.

Info

Publication number
FR2696873B1
FR2696873B1 FR9311688A FR9311688A FR2696873B1 FR 2696873 B1 FR2696873 B1 FR 2696873B1 FR 9311688 A FR9311688 A FR 9311688A FR 9311688 A FR9311688 A FR 9311688A FR 2696873 B1 FR2696873 B1 FR 2696873B1
Authority
FR
France
Prior art keywords
manufacture
field effect
effect transistor
transistor
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9311688A
Other languages
English (en)
Other versions
FR2696873A1 (fr
Inventor
Toshiaki Kitano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2696873A1 publication Critical patent/FR2696873A1/fr
Application granted granted Critical
Publication of FR2696873B1 publication Critical patent/FR2696873B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H01L29/66871—Processes wherein the final gate is made after the formation of the source and drain regions in the active layer, e.g. dummy-gate processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0891—Source or drain regions of field-effect devices of field-effect transistors with Schottky gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H01L29/66878—Processes wherein the final gate is made before the formation, e.g. activation anneal, of the source and drain regions in the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H01L29/8128—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with recessed gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
FR9311688A 1992-10-09 1993-09-30 Transistor à effet de champ et procédé pour sa fabrication. Expired - Fee Related FR2696873B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP29813692 1992-10-09
JP5055252A JPH06177159A (ja) 1992-10-09 1993-03-16 電界効果トランジスタ及びその製造方法

Publications (2)

Publication Number Publication Date
FR2696873A1 FR2696873A1 (fr) 1994-04-15
FR2696873B1 true FR2696873B1 (fr) 1994-12-23

Family

ID=26396137

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9311688A Expired - Fee Related FR2696873B1 (fr) 1992-10-09 1993-09-30 Transistor à effet de champ et procédé pour sa fabrication.

Country Status (4)

Country Link
US (2) US5486710A (fr)
JP (1) JPH06177159A (fr)
DE (1) DE4334427C2 (fr)
FR (1) FR2696873B1 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0822998A (ja) * 1994-07-06 1996-01-23 Mitsubishi Electric Corp 半導体装置、及びその製造方法
JPH0936133A (ja) * 1995-07-14 1997-02-07 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP3640272B2 (ja) * 1996-02-09 2005-04-20 三菱電機株式会社 半導体装置の製造方法
JP2809189B2 (ja) * 1996-04-25 1998-10-08 日本電気株式会社 半導体トランジスタの製造方法
US5895941A (en) * 1996-07-01 1999-04-20 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with electrode portions under T-shaped gate structure
US5731608A (en) * 1997-03-07 1998-03-24 Sharp Microelectronics Technology, Inc. One transistor ferroelectric memory cell and method of making the same
JPH10335595A (ja) * 1997-03-31 1998-12-18 Sharp Corp 増幅器用半導体素子、増幅器用半導体素子の製造方法および増幅器用半導体装置
US6262444B1 (en) * 1997-04-23 2001-07-17 Nec Corporation Field-effect semiconductor device with a recess profile
JP2003023015A (ja) 2001-07-06 2003-01-24 Mitsubishi Electric Corp ＧａＡｓ系半導体電界効果トランジスタ
JP3682920B2 (ja) * 2001-10-30 2005-08-17 富士通株式会社 半導体装置の製造方法
US6841832B1 (en) * 2001-12-19 2005-01-11 Advanced Micro Devices, Inc. Array of gate dielectric structures to measure gate dielectric thickness and parasitic capacitance
DE10304722A1 (de) 2002-05-11 2004-08-19 United Monolithic Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements
EP2114983B8 (fr) * 2007-02-07 2015-02-18 The Regents of the University of Colorado, A Body Corporate Inhibiteurs des recepteurs axl a activite tyrosine kinase et procedes de fabrication et d'utilisation de ceux-ci

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4244097A (en) * 1979-03-15 1981-01-13 Hughes Aircraft Company Schottky-gate field-effect transistor and fabrication process therefor
JPS5728322A (en) * 1980-07-28 1982-02-16 Fujitsu Ltd Formation of semiconductor single crystal layer
JPS58147170A (ja) * 1982-02-26 1983-09-01 Fujitsu Ltd 電界効果トランジスタの製造方法
JPS6086866A (ja) * 1983-10-19 1985-05-16 Matsushita Electronics Corp 電界効果トランジスタおよびその製造方法
JPS61214473A (ja) * 1985-03-19 1986-09-24 Sony Corp 電界効果型トランジスタ
JPS61295670A (ja) * 1985-06-25 1986-12-26 Toshiba Corp ＧａＡｓ半導体装置の製造方法
JPS6461063A (en) * 1987-09-01 1989-03-08 Fujitsu Ltd Semiconductor device and manufacture thereof
JPH01161873A (ja) * 1987-12-18 1989-06-26 Fujitsu Ltd 半導体装置の製造方法
JPH023938A (ja) * 1988-06-20 1990-01-09 Mitsubishi Electric Corp 電界効果トランジスタ
US5091759A (en) * 1989-10-30 1992-02-25 Texas Instruments Incorporated Heterostructure field effect transistor
JPH02139941A (ja) * 1988-11-21 1990-05-29 Mitsubishi Electric Corp 半導体装置の製造方法
JPH02222549A (ja) * 1989-02-23 1990-09-05 Murata Mfg Co Ltd 半導体装置の構造
JPH02253632A (ja) * 1989-03-27 1990-10-12 Matsushita Electric Ind Co Ltd 電界効果型トランジスタの製造方法
FR2646290B1 (fr) * 1989-04-25 1991-06-14 Thomson Csf Composant semiconducteur de type mesfet a heterojonction pseudomorphique
JPH02291120A (ja) * 1989-04-28 1990-11-30 Nec Corp ＧａＡｓ電界郊果トランジスタの製法
JPH03192732A (ja) * 1989-12-21 1991-08-22 Nec Corp ３―ｖ族半導体電界効果トランジスタ
US5028968A (en) * 1990-01-02 1991-07-02 The Aerospace Corporation Radiation hard GaAs high electron mobility transistor
JPH0493038A (ja) * 1990-08-09 1992-03-25 Toshiba Corp 電界効果トランジスタ
JP2523985B2 (ja) * 1990-11-16 1996-08-14 三菱電機株式会社 半導体装置の製造方法
JP2549206B2 (ja) * 1990-12-27 1996-10-30 住友電気工業株式会社 電界効果トランジスタ

Also Published As

Publication number Publication date
US5585289A (en) 1996-12-17
US5486710A (en) 1996-01-23
DE4334427A1 (de) 1994-04-14
FR2696873A1 (fr) 1994-04-15
DE4334427C2 (de) 1998-03-19
JPH06177159A (ja) 1994-06-24

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ST Notification of lapse