FR2646290B1 - Composant semiconducteur de type mesfet a heterojonction pseudomorphique - Google Patents
Composant semiconducteur de type mesfet a heterojonction pseudomorphiqueInfo
- Publication number
- FR2646290B1 FR2646290B1 FR8905452A FR8905452A FR2646290B1 FR 2646290 B1 FR2646290 B1 FR 2646290B1 FR 8905452 A FR8905452 A FR 8905452A FR 8905452 A FR8905452 A FR 8905452A FR 2646290 B1 FR2646290 B1 FR 2646290B1
- Authority
- FR
- France
- Prior art keywords
- semiconductor component
- pseudomorphic
- heterojunction
- mesfet
- mesfet semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
- H01L29/7784—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material with delta or planar doped donor layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8905452A FR2646290B1 (fr) | 1989-04-25 | 1989-04-25 | Composant semiconducteur de type mesfet a heterojonction pseudomorphique |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8905452A FR2646290B1 (fr) | 1989-04-25 | 1989-04-25 | Composant semiconducteur de type mesfet a heterojonction pseudomorphique |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2646290A1 FR2646290A1 (fr) | 1990-10-26 |
FR2646290B1 true FR2646290B1 (fr) | 1991-06-14 |
Family
ID=9381090
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8905452A Expired - Lifetime FR2646290B1 (fr) | 1989-04-25 | 1989-04-25 | Composant semiconducteur de type mesfet a heterojonction pseudomorphique |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2646290B1 (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2679071B1 (fr) * | 1991-07-08 | 1997-04-11 | France Telecom | Transistor a effet de champ, a couches minces de bande d'energie controlee. |
FR2690276A1 (fr) * | 1992-04-15 | 1993-10-22 | Picogiga Sa | Circuit intégré à transistors complémentaires à effet de champ à hétérojonction. |
JPH06177159A (ja) * | 1992-10-09 | 1994-06-24 | Mitsubishi Electric Corp | 電界効果トランジスタ及びその製造方法 |
US20100148153A1 (en) * | 2008-12-16 | 2010-06-17 | Hudait Mantu K | Group III-V devices with delta-doped layer under channel region |
-
1989
- 1989-04-25 FR FR8905452A patent/FR2646290B1/fr not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2646290A1 (fr) | 1990-10-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CL | Concession to grant licenses | ||
ST | Notification of lapse |