DE69015228D1 - Halbleitervorrichtung mit Kaskaden-modulations-dotierten Potentialtopf-Heterostrukturen. - Google Patents

Halbleitervorrichtung mit Kaskaden-modulations-dotierten Potentialtopf-Heterostrukturen.

Info

Publication number
DE69015228D1
DE69015228D1 DE69015228T DE69015228T DE69015228D1 DE 69015228 D1 DE69015228 D1 DE 69015228D1 DE 69015228 T DE69015228 T DE 69015228T DE 69015228 T DE69015228 T DE 69015228T DE 69015228 D1 DE69015228 D1 DE 69015228D1
Authority
DE
Germany
Prior art keywords
semiconductor device
potential well
well heterostructures
cascade modulation
doped potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69015228T
Other languages
English (en)
Other versions
DE69015228T2 (de
Inventor
Israel Bar-Joseph
Tao-Yuan Chang
Daniel S Chemla
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of DE69015228D1 publication Critical patent/DE69015228D1/de
Publication of DE69015228T2 publication Critical patent/DE69015228T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01725—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01725—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells
    • G02F1/0175—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells with a spatially varied well profile, e.g. graded or stepped quantum wells

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Semiconductor Lasers (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
DE69015228T 1989-03-03 1990-02-23 Halbleitervorrichtung mit Kaskaden-modulations-dotierten Potentialtopf-Heterostrukturen. Expired - Fee Related DE69015228T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/322,958 US5008717A (en) 1989-03-03 1989-03-03 Semiconductor device including cascaded modulation-doped quantum well heterostructures

Publications (2)

Publication Number Publication Date
DE69015228D1 true DE69015228D1 (de) 1995-02-02
DE69015228T2 DE69015228T2 (de) 1995-05-04

Family

ID=23257193

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69015228T Expired - Fee Related DE69015228T2 (de) 1989-03-03 1990-02-23 Halbleitervorrichtung mit Kaskaden-modulations-dotierten Potentialtopf-Heterostrukturen.

Country Status (5)

Country Link
US (1) US5008717A (de)
EP (1) EP0385685B1 (de)
JP (1) JPH07109929B2 (de)
CA (1) CA2007829C (de)
DE (1) DE69015228T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2065247C (en) * 1989-09-04 1998-12-01 Michael Graham Burt Quantum well structures
US5140386A (en) * 1991-05-09 1992-08-18 Raytheon Company High electron mobility transistor
US5210428A (en) * 1991-11-01 1993-05-11 At&T Bell Laboratories Semiconductor device having shallow quantum well region
JPH05152677A (ja) * 1991-11-28 1993-06-18 Nec Corp 半導体レーザ装置
FR2692374B1 (fr) * 1992-06-15 1994-07-29 France Telecom Procede et dispositif de modulation et d'amplification de faisceaux lumineux.
US5436756A (en) * 1992-09-30 1995-07-25 At&T Bell Laboratories Suppressed photocurrent, quantum well optical modulation device
DE4313488A1 (de) * 1993-04-24 1994-10-27 Sel Alcatel Ag Optoelektronisches Halbleiterbauelement
JPH09512348A (ja) * 1994-04-26 1997-12-09 テレフオンアクチーボラゲツト エル エム エリクソン 超格子光吸収体
US5732179A (en) * 1995-03-30 1998-03-24 Bell Communications Research, Inc. Birefringence-free semiconductor waveguide
AU5611898A (en) * 1996-12-20 1998-07-17 Emory University Low-temperature-grown be-doped ingaas/ina1as multiple quantum wells
AU2470301A (en) 1999-10-29 2001-05-08 E20 Communications, Inc. Modulated integrated optically pumped vertical cavity surface emitting lasers
US6424669B1 (en) 1999-10-29 2002-07-23 E20 Communications, Inc. Integrated optically pumped vertical cavity surface emitting laser
US6556610B1 (en) 2001-04-12 2003-04-29 E20 Communications, Inc. Semiconductor lasers
US6717964B2 (en) * 2001-07-02 2004-04-06 E20 Communications, Inc. Method and apparatus for wavelength tuning of optically pumped vertical cavity surface emitting lasers
DE10135958B4 (de) * 2001-07-24 2008-05-08 Finisar Corp., Sunnyvale Elektroabsorptionsmodulator, Modulator-Laser-Vorrichtung und Verfahren zum Herstellen eines Elektroabsorptionsmodulators
JP3589662B2 (ja) * 2002-01-07 2004-11-17 松下電器産業株式会社 面型光変調器およびその製造方法
US7599595B2 (en) * 2003-10-03 2009-10-06 Ntt Electronics Corporation Semiconductor optoelectronic waveguide
US7177061B2 (en) * 2005-05-31 2007-02-13 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Semiconductor optical modulator having a quantum well structure for increasing effective photocurrent generating capability
US7508858B2 (en) * 2007-04-30 2009-03-24 The Research Foundation Of State University Of New York Detuned duo-cavity laser-modulator device and method with detuning selected to minimize change in reflectivity
US8498501B2 (en) 2009-05-27 2013-07-30 Nec Corporation Semiconductor optical modulator and semiconductor mach-zehnder optical modulator
US9733497B2 (en) * 2015-04-09 2017-08-15 Mitsubishi Electric Corporation Semiconductor optical modulator and optical module

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8331298D0 (en) * 1983-11-23 1983-12-29 British Telecomm Optical devices
US4700353A (en) * 1985-08-12 1987-10-13 Cornell Research Foundation, Inc. Active modulation of quantum well lasers by energy shifts in gain spectra with applied electric field
US4761620A (en) * 1986-12-03 1988-08-02 American Telephone And Telegraph Company, At&T Bell Laboratories Optical reading of quantum well device
US4818079A (en) * 1987-01-15 1989-04-04 California Institute Of Technology Multiple quantum well optical modulator
JPH0721594B2 (ja) * 1987-01-19 1995-03-08 国際電信電話株式会社 光スイツチ
US4873555A (en) * 1987-06-08 1989-10-10 University Of Pittsburgh Of The Commonwealth System Of Higher Education Intraband quantum well photodetector and associated method

Also Published As

Publication number Publication date
US5008717A (en) 1991-04-16
EP0385685B1 (de) 1994-12-21
EP0385685A3 (de) 1991-09-25
CA2007829C (en) 1993-12-07
JPH07109929B2 (ja) 1995-11-22
EP0385685A2 (de) 1990-09-05
DE69015228T2 (de) 1995-05-04
JPH02272785A (ja) 1990-11-07
CA2007829A1 (en) 1990-09-03

Similar Documents

Publication Publication Date Title
DE69015228D1 (de) Halbleitervorrichtung mit Kaskaden-modulations-dotierten Potentialtopf-Heterostrukturen.
DE69009409D1 (de) Halbleiter-Heterostrukturen.
DE69332857D1 (de) Halbleitervorrichtung.
DE69011738D1 (de) Halbleiter-Speichereinrichtung.
DE3679971D1 (de) Modulationsdotierter feldeffekttransistor.
DE69120116D1 (de) Heterostruktur-Halbleiteranordnung
DE69433543D1 (de) Halbleitervorrichtung.
DE68921368D1 (de) Gate-Abschalthalbleitereinrichtung.
DE69022310D1 (de) Halbleiterspeichergerät.
DE69022537D1 (de) Halbleiterspeicheranordnung.
DE68923629D1 (de) MIS Bauelement mit zusätzlichem Gate.
DE68921391D1 (de) Quantuminterferenzhalbleitereinrichtung.
DE69023468D1 (de) Halbleiter-Speichereinrichtung.
DE69022312D1 (de) Halbleiterspeichergerät.
DE69023258D1 (de) Halbleiter-Speichereinrichtung.
DE69017518D1 (de) Halbleiterspeicheranordnung.
DE69009626D1 (de) Masterslice-Halbleitervorrichtung.
DE69021904D1 (de) Zusammengesetzte Halbleitervorrichtung.
DE69317562D1 (de) Halbleiteranordnung mit doppelgate.
DE69009266D1 (de) Halbleiterlaser-Vorrichtung.
DE68926227D1 (de) Feldeffekthalbleiteranordnung mit Schottky-Gate
DE68917971D1 (de) Halbleitervorrichtung.
DE69109014D1 (de) Flip-Chip-Halbleiteranordnung.
DE59003052D1 (de) Halbleiterbauelement.
DE69023594D1 (de) Halbleiterspeicheranordnung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee