FR2693034B1 - Transistor à couche mince et son procédé de fabrication. - Google Patents

Transistor à couche mince et son procédé de fabrication.

Info

Publication number
FR2693034B1
FR2693034B1 FR9307989A FR9307989A FR2693034B1 FR 2693034 B1 FR2693034 B1 FR 2693034B1 FR 9307989 A FR9307989 A FR 9307989A FR 9307989 A FR9307989 A FR 9307989A FR 2693034 B1 FR2693034 B1 FR 2693034B1
Authority
FR
France
Prior art keywords
thin film
manufacturing process
film transistor
transistor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9307989A
Other languages
English (en)
Other versions
FR2693034A1 (fr
Inventor
Hyun Kim Jeong
Yeol Oh Ui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Electronics Inc
Original Assignee
Gold Star Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019920011602A external-priority patent/KR940000911A/ko
Priority claimed from KR1019920012069A external-priority patent/KR940002645A/ko
Application filed by Gold Star Co Ltd filed Critical Gold Star Co Ltd
Publication of FR2693034A1 publication Critical patent/FR2693034A1/fr
Application granted granted Critical
Publication of FR2693034B1 publication Critical patent/FR2693034B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
FR9307989A 1992-06-30 1993-06-30 Transistor à couche mince et son procédé de fabrication. Expired - Fee Related FR2693034B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019920011602A KR940000911A (ko) 1992-06-30 1992-06-30 액정표시소자 및 제조방법
KR1019920012069A KR940002645A (ko) 1992-07-07 1992-07-07 액티브 매트릭스 액정표시소자 및 그 제조방법

Publications (2)

Publication Number Publication Date
FR2693034A1 FR2693034A1 (fr) 1993-12-31
FR2693034B1 true FR2693034B1 (fr) 1995-04-07

Family

ID=26629145

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9307989A Expired - Fee Related FR2693034B1 (fr) 1992-06-30 1993-06-30 Transistor à couche mince et son procédé de fabrication.

Country Status (4)

Country Link
US (1) US5396083A (fr)
JP (1) JP3532228B2 (fr)
DE (1) DE4321590B4 (fr)
FR (1) FR2693034B1 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0166894B1 (ko) * 1995-02-20 1999-03-30 구자홍 액정표시장치
KR100303134B1 (ko) * 1995-05-09 2002-11-23 엘지.필립스 엘시디 주식회사 액정표시소자및그제조방법.
GB9626344D0 (en) * 1996-12-19 1997-02-05 Philips Electronics Nv Electronic devices and their manufacture
KR100647695B1 (ko) * 2005-05-27 2006-11-23 삼성에스디아이 주식회사 유기 박막 트랜지스터 및 그의 제조방법과 이를 구비한평판표시장치
JP5289678B2 (ja) * 2006-01-12 2013-09-11 富士通株式会社 電界効果型トランジスタ
US10002968B2 (en) 2011-12-14 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
JP5637231B2 (ja) * 2013-03-04 2014-12-10 富士通株式会社 電界効果型トランジスタの製造方法
CN103730485B (zh) 2013-12-27 2016-09-07 京东方科技集团股份有限公司 双面显示的oled阵列基板及其制备方法、显示装置
CN104049428B (zh) * 2014-06-16 2017-02-22 京东方科技集团股份有限公司 一种阵列基板及其制作方法和显示装置
CN104576755A (zh) * 2014-12-30 2015-04-29 深圳市华星光电技术有限公司 一种薄膜晶体管、陈列基板及显示装置
GB2601257B (en) * 2017-03-31 2022-09-14 Pragmatic Printing Ltd Electronic structures and their methods of manufacture
GB2561004B (en) * 2017-03-31 2022-06-01 Pragmatic Printing Ltd Electronic structures and their methods of manufacture
CN107845674B (zh) * 2017-10-27 2020-07-03 合肥鑫晟光电科技有限公司 薄膜晶体管及其制备方法和阵列基板
KR102015570B1 (ko) * 2018-01-16 2019-08-28 국민대학교산학협력단 하이브리드형 적층회로 및 그 제조방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4272880A (en) * 1979-04-20 1981-06-16 Intel Corporation MOS/SOS Process
JPS61102057A (ja) * 1984-10-25 1986-05-20 Sony Corp 半導体装置の製造方法
JPH01217421A (ja) * 1988-02-26 1989-08-31 Seikosha Co Ltd 非晶質シリコン薄膜トランジスタアレイ基板およびその製造方法
JPH01246863A (ja) * 1988-03-29 1989-10-02 Seiko Epson Corp 半導体装置及び製造方法

Also Published As

Publication number Publication date
FR2693034A1 (fr) 1993-12-31
JPH06196697A (ja) 1994-07-15
DE4321590B4 (de) 2006-09-14
DE4321590A1 (de) 1994-01-20
US5396083A (en) 1995-03-07
JP3532228B2 (ja) 2004-05-31

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Legal Events

Date Code Title Description
CD Change of name or company name
CJ Change in legal form
TP Transmission of property
ST Notification of lapse

Effective date: 20100226