MX9200257A - Transistor de pelicula delgada de polisilicio y prtransistor de pelicula delgada de polisilicio y proceso para su fabricacion. oceso para su fabricacion. - Google Patents

Transistor de pelicula delgada de polisilicio y prtransistor de pelicula delgada de polisilicio y proceso para su fabricacion. oceso para su fabricacion.

Info

Publication number
MX9200257A
MX9200257A MX9200257A MX9200257A MX9200257A MX 9200257 A MX9200257 A MX 9200257A MX 9200257 A MX9200257 A MX 9200257A MX 9200257 A MX9200257 A MX 9200257A MX 9200257 A MX9200257 A MX 9200257A
Authority
MX
Mexico
Prior art keywords
polysilicio
thin film
prtransistor
occess
manufacture
Prior art date
Application number
MX9200257A
Other languages
English (en)
Inventor
Nang T Tran Nang T Tran
Michael P Keyes Michael Keyes
Original Assignee
Minnesota Mining & Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Minnesota Mining & Mfg filed Critical Minnesota Mining & Mfg
Publication of MX9200257A publication Critical patent/MX9200257A/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
MX9200257A 1991-01-30 1992-01-21 Transistor de pelicula delgada de polisilicio y prtransistor de pelicula delgada de polisilicio y proceso para su fabricacion. oceso para su fabricacion. MX9200257A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US64852991A 1991-01-30 1991-01-30

Publications (1)

Publication Number Publication Date
MX9200257A true MX9200257A (es) 1992-10-01

Family

ID=24601152

Family Applications (1)

Application Number Title Priority Date Filing Date
MX9200257A MX9200257A (es) 1991-01-30 1992-01-21 Transistor de pelicula delgada de polisilicio y prtransistor de pelicula delgada de polisilicio y proceso para su fabricacion. oceso para su fabricacion.

Country Status (8)

Country Link
US (1) US5534445A (es)
EP (1) EP0569470B1 (es)
JP (1) JPH06505362A (es)
KR (1) KR930703707A (es)
CA (1) CA2100065A1 (es)
DE (1) DE69228868D1 (es)
MX (1) MX9200257A (es)
WO (1) WO1992014268A1 (es)

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US6933182B1 (en) 1995-04-20 2005-08-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device and manufacturing system thereof
US6444506B1 (en) * 1995-10-25 2002-09-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing silicon thin film devices using laser annealing in a hydrogen mixture gas followed by nitride formation
US5808318A (en) * 1996-03-03 1998-09-15 Ag Technology Co., Ltd. Polycrystalline semiconductor thin film for semiconductor TFT on a substrate having a mobility in a longitudinal direction greater than in a width direction
US5744202A (en) * 1996-09-30 1998-04-28 Xerox Corporation Enhancement of hydrogenation of materials encapsulated by an oxide
US5707895A (en) * 1996-10-21 1998-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Thin film transistor performance enhancement by water plasma treatment
TW386238B (en) * 1997-01-20 2000-04-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP4401448B2 (ja) * 1997-02-24 2010-01-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH10275913A (ja) * 1997-03-28 1998-10-13 Sanyo Electric Co Ltd 半導体装置、半導体装置の製造方法及び薄膜トランジスタの製造方法
US6057182A (en) * 1997-09-05 2000-05-02 Sarnoff Corporation Hydrogenation of polysilicon thin film transistors
JP3599972B2 (ja) * 1997-09-30 2004-12-08 三洋電機株式会社 薄膜トランジスタの製造方法
JPH11111991A (ja) 1997-09-30 1999-04-23 Sanyo Electric Co Ltd 薄膜トランジスタ及び薄膜トランジスタの製造方法
JPH11111994A (ja) 1997-10-03 1999-04-23 Sanyo Electric Co Ltd 薄膜トランジスタ及び薄膜トランジスタの製造方法
JPH11111998A (ja) 1997-10-06 1999-04-23 Sanyo Electric Co Ltd 薄膜トランジスタの製造方法
US7053002B2 (en) * 1998-12-04 2006-05-30 Applied Materials, Inc Plasma preclean with argon, helium, and hydrogen gases
KR100390822B1 (ko) * 1999-12-28 2003-07-10 주식회사 하이닉스반도체 이미지센서에서의 암전류 감소 방법
JP2001313384A (ja) * 2000-04-28 2001-11-09 Shimadzu Corp 放射線検出器
GB0017471D0 (en) * 2000-07-18 2000-08-30 Koninkl Philips Electronics Nv Thin film transistors and their manufacture
JP2002280550A (ja) * 2001-03-22 2002-09-27 Mitsubishi Electric Corp 半導体装置の製造方法及び半導体装置
TW200304227A (en) * 2002-03-11 2003-09-16 Sanyo Electric Co Top gate type thin film transistor
US7038239B2 (en) 2002-04-09 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
JP3989761B2 (ja) 2002-04-09 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
US7256421B2 (en) 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
NL1020634C2 (nl) * 2002-05-21 2003-11-24 Otb Group Bv Werkwijze voor het passiveren van een halfgeleider substraat.
GB0222450D0 (en) * 2002-09-27 2002-11-06 Koninkl Philips Electronics Nv Method of manufacturing an electronic device comprising a thin film transistor
US6841431B2 (en) * 2003-01-29 2005-01-11 Chunghwa Picture Tubes, Ltd. Method for reducing the contact resistance
TWI221320B (en) * 2003-05-08 2004-09-21 Toppoly Optoelectronics Corp Process for passivating polysilicon and process for fabricating polysilicon thin film transistor
US7507618B2 (en) * 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
JP3986544B2 (ja) * 2006-12-11 2007-10-03 株式会社半導体エネルギー研究所 半導体の作製方法
US8861909B2 (en) 2011-02-17 2014-10-14 Cornell University Polysilicon photodetector, methods and applications
DE112015000352T5 (de) 2014-03-11 2016-09-22 Fuji Electric Co., Ltd. Verfahren zum Herstellen einer Siliciumcarbid-Halbleitervorrichtung und Siliciumcarbid-Halbleitervorrichtung
CN103985637B (zh) * 2014-04-30 2017-02-01 京东方科技集团股份有限公司 低温多晶硅薄膜晶体管及其制作方法和显示装置
US9793252B2 (en) 2015-03-30 2017-10-17 Emagin Corporation Method of integrating inorganic light emitting diode with oxide thin film transistor for display applications
US10490689B1 (en) * 2018-01-31 2019-11-26 Hrl Laboratories, Llc Grain boundary passivation of polycrystalline materials

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US4751196A (en) * 1985-04-01 1988-06-14 Motorola Inc. High voltage thin film transistor on PLZT and method of manufacture thereof
JPS6251264A (ja) * 1985-08-30 1987-03-05 Hitachi Ltd 薄膜トランジスタの製造方法
US4851363A (en) * 1986-07-11 1989-07-25 General Motors Corporation Fabrication of polysilicon fets on alkaline earth alumino-silicate glasses
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JPH0687503B2 (ja) * 1987-03-11 1994-11-02 株式会社日立製作所 薄膜半導体装置
JP2764395B2 (ja) * 1987-04-20 1998-06-11 セイコーエプソン株式会社 薄膜トランジスタの製造方法
JPH0640550B2 (ja) * 1987-06-09 1994-05-25 沖電気工業株式会社 薄膜トランジスタの製造方法
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JPS6461062A (en) * 1987-09-01 1989-03-08 Ricoh Kk Manufacture of thin film transistor
JP2589327B2 (ja) * 1987-11-14 1997-03-12 株式会社リコー 薄膜トランジスタの製造方法
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JPH01275745A (ja) * 1988-04-27 1989-11-06 Tosoh Corp 窒化シリコン系薄膜及びその製造方法
JP3055782B2 (ja) * 1988-09-19 2000-06-26 セイコーエプソン株式会社 薄膜トランジスタの製造方
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Also Published As

Publication number Publication date
EP0569470B1 (en) 1999-04-07
CA2100065A1 (en) 1992-07-31
US5534445A (en) 1996-07-09
JPH06505362A (ja) 1994-06-16
DE69228868D1 (de) 1999-05-12
EP0569470A1 (en) 1993-11-18
KR930703707A (ko) 1993-11-30
WO1992014268A1 (en) 1992-08-20

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Legal Events

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FG Grant or registration
MM Annulment or lapse due to non-payment of fees