JPS6461062A - Manufacture of thin film transistor - Google Patents
Manufacture of thin film transistorInfo
- Publication number
- JPS6461062A JPS6461062A JP21975787A JP21975787A JPS6461062A JP S6461062 A JPS6461062 A JP S6461062A JP 21975787 A JP21975787 A JP 21975787A JP 21975787 A JP21975787 A JP 21975787A JP S6461062 A JPS6461062 A JP S6461062A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film transistor
- deposited
- polysilicon layer
- polysilicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000010410 layer Substances 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 229920005591 polysilicon Polymers 0.000 abstract 3
- 239000010408 film Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
PURPOSE:To improve the characteristics of an N-channel thin film transistor by processing a thin film Tr which employs polysilicon in a final manufacturing process, in hydrogen plasma, and then thermally annealing it. CONSTITUTION:A polysilicon layer is deposited on a quartz substrate 1, then dry oxidized to generate a silicon oxide film, and the polysilicon layer is further deposited. Then, a gate SiO2 layer 4 and a gate electrode 5 are formed by photolithography, etching method, coated with coating type diffusing agent, an impurity is diffused in an inert gas atmosphere for 30min to form source, drain diffused regions 3, an interlayer insulating film 6 is deposited, and aluminum electrodes 7 are formed. This thin film transistor is processed at 360 deg.C, gas H2=100SCCM, 1.0Torr of pressure, 240W of plasma output for 35min, and then thermally annealed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21975787A JPS6461062A (en) | 1987-09-01 | 1987-09-01 | Manufacture of thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21975787A JPS6461062A (en) | 1987-09-01 | 1987-09-01 | Manufacture of thin film transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6461062A true JPS6461062A (en) | 1989-03-08 |
Family
ID=16740522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21975787A Pending JPS6461062A (en) | 1987-09-01 | 1987-09-01 | Manufacture of thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6461062A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5254480A (en) * | 1992-02-20 | 1993-10-19 | Minnesota Mining And Manufacturing Company | Process for producing a large area solid state radiation detector |
| JPH06224222A (en) * | 1992-11-13 | 1994-08-12 | G T C:Kk | Manufacture of polycrystalline silicon film transistor |
| US5470763A (en) * | 1993-09-21 | 1995-11-28 | Nec Corporation | Method for manufacturing thin film transistor with short hydrogen passivation time |
| US5534445A (en) * | 1991-01-30 | 1996-07-09 | Minnesota Mining And Manufacturing Company | Method of fabricating a polysilicon thin film transistor |
| US5576222A (en) * | 1992-01-27 | 1996-11-19 | Tdk Corp. | Method of making a semiconductor image sensor device |
| JPH09129889A (en) * | 1995-10-31 | 1997-05-16 | Nec Corp | Manufacture of semiconductor device |
| US6558323B2 (en) | 2000-11-29 | 2003-05-06 | Olympus Optical Co., Ltd. | Ultrasound transducer array |
| CN1329966C (en) * | 2002-08-15 | 2007-08-01 | 日本电气株式会社 | Method for producing thin film transistor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59204275A (en) * | 1983-05-06 | 1984-11-19 | Seiko Epson Corp | Manufacture of thin film transistor |
-
1987
- 1987-09-01 JP JP21975787A patent/JPS6461062A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59204275A (en) * | 1983-05-06 | 1984-11-19 | Seiko Epson Corp | Manufacture of thin film transistor |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5534445A (en) * | 1991-01-30 | 1996-07-09 | Minnesota Mining And Manufacturing Company | Method of fabricating a polysilicon thin film transistor |
| US5576222A (en) * | 1992-01-27 | 1996-11-19 | Tdk Corp. | Method of making a semiconductor image sensor device |
| US5254480A (en) * | 1992-02-20 | 1993-10-19 | Minnesota Mining And Manufacturing Company | Process for producing a large area solid state radiation detector |
| US6262421B1 (en) | 1992-02-20 | 2001-07-17 | Imation Corp. | Solid state radiation detector for x-ray imaging |
| JPH06224222A (en) * | 1992-11-13 | 1994-08-12 | G T C:Kk | Manufacture of polycrystalline silicon film transistor |
| US5470763A (en) * | 1993-09-21 | 1995-11-28 | Nec Corporation | Method for manufacturing thin film transistor with short hydrogen passivation time |
| JPH09129889A (en) * | 1995-10-31 | 1997-05-16 | Nec Corp | Manufacture of semiconductor device |
| US6558323B2 (en) | 2000-11-29 | 2003-05-06 | Olympus Optical Co., Ltd. | Ultrasound transducer array |
| CN1329966C (en) * | 2002-08-15 | 2007-08-01 | 日本电气株式会社 | Method for producing thin film transistor |
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