JPS6461062A - Manufacture of thin film transistor - Google Patents

Manufacture of thin film transistor

Info

Publication number
JPS6461062A
JPS6461062A JP21975787A JP21975787A JPS6461062A JP S6461062 A JPS6461062 A JP S6461062A JP 21975787 A JP21975787 A JP 21975787A JP 21975787 A JP21975787 A JP 21975787A JP S6461062 A JPS6461062 A JP S6461062A
Authority
JP
Japan
Prior art keywords
thin film
film transistor
deposited
polysilicon layer
polysilicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21975787A
Other languages
Japanese (ja)
Inventor
Mamoru Ishida
Shunichi Inagi
Zenichi Akiyama
Mitsuhiro Kobata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Research Institute of General Electronics Co Ltd
Ricoh Co Ltd
Original Assignee
Ricoh Research Institute of General Electronics Co Ltd
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Research Institute of General Electronics Co Ltd, Ricoh Co Ltd filed Critical Ricoh Research Institute of General Electronics Co Ltd
Priority to JP21975787A priority Critical patent/JPS6461062A/en
Publication of JPS6461062A publication Critical patent/JPS6461062A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To improve the characteristics of an N-channel thin film transistor by processing a thin film Tr which employs polysilicon in a final manufacturing process, in hydrogen plasma, and then thermally annealing it. CONSTITUTION:A polysilicon layer is deposited on a quartz substrate 1, then dry oxidized to generate a silicon oxide film, and the polysilicon layer is further deposited. Then, a gate SiO2 layer 4 and a gate electrode 5 are formed by photolithography, etching method, coated with coating type diffusing agent, an impurity is diffused in an inert gas atmosphere for 30min to form source, drain diffused regions 3, an interlayer insulating film 6 is deposited, and aluminum electrodes 7 are formed. This thin film transistor is processed at 360 deg.C, gas H2=100SCCM, 1.0Torr of pressure, 240W of plasma output for 35min, and then thermally annealed.
JP21975787A 1987-09-01 1987-09-01 Manufacture of thin film transistor Pending JPS6461062A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21975787A JPS6461062A (en) 1987-09-01 1987-09-01 Manufacture of thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21975787A JPS6461062A (en) 1987-09-01 1987-09-01 Manufacture of thin film transistor

Publications (1)

Publication Number Publication Date
JPS6461062A true JPS6461062A (en) 1989-03-08

Family

ID=16740522

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21975787A Pending JPS6461062A (en) 1987-09-01 1987-09-01 Manufacture of thin film transistor

Country Status (1)

Country Link
JP (1) JPS6461062A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5254480A (en) * 1992-02-20 1993-10-19 Minnesota Mining And Manufacturing Company Process for producing a large area solid state radiation detector
JPH06224222A (en) * 1992-11-13 1994-08-12 G T C:Kk Manufacture of polycrystalline silicon film transistor
US5470763A (en) * 1993-09-21 1995-11-28 Nec Corporation Method for manufacturing thin film transistor with short hydrogen passivation time
US5534445A (en) * 1991-01-30 1996-07-09 Minnesota Mining And Manufacturing Company Method of fabricating a polysilicon thin film transistor
US5576222A (en) * 1992-01-27 1996-11-19 Tdk Corp. Method of making a semiconductor image sensor device
JPH09129889A (en) * 1995-10-31 1997-05-16 Nec Corp Manufacture of semiconductor device
US6558323B2 (en) 2000-11-29 2003-05-06 Olympus Optical Co., Ltd. Ultrasound transducer array
CN1329966C (en) * 2002-08-15 2007-08-01 日本电气株式会社 Method for producing thin film transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59204275A (en) * 1983-05-06 1984-11-19 Seiko Epson Corp Manufacture of thin film transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59204275A (en) * 1983-05-06 1984-11-19 Seiko Epson Corp Manufacture of thin film transistor

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5534445A (en) * 1991-01-30 1996-07-09 Minnesota Mining And Manufacturing Company Method of fabricating a polysilicon thin film transistor
US5576222A (en) * 1992-01-27 1996-11-19 Tdk Corp. Method of making a semiconductor image sensor device
US5254480A (en) * 1992-02-20 1993-10-19 Minnesota Mining And Manufacturing Company Process for producing a large area solid state radiation detector
US6262421B1 (en) 1992-02-20 2001-07-17 Imation Corp. Solid state radiation detector for x-ray imaging
JPH06224222A (en) * 1992-11-13 1994-08-12 G T C:Kk Manufacture of polycrystalline silicon film transistor
US5470763A (en) * 1993-09-21 1995-11-28 Nec Corporation Method for manufacturing thin film transistor with short hydrogen passivation time
JPH09129889A (en) * 1995-10-31 1997-05-16 Nec Corp Manufacture of semiconductor device
US6558323B2 (en) 2000-11-29 2003-05-06 Olympus Optical Co., Ltd. Ultrasound transducer array
CN1329966C (en) * 2002-08-15 2007-08-01 日本电气株式会社 Method for producing thin film transistor

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