DE69317101T2 - Dünnfilm-Transistormatrix und deren Herstellungsverfahren - Google Patents

Dünnfilm-Transistormatrix und deren Herstellungsverfahren

Info

Publication number
DE69317101T2
DE69317101T2 DE69317101T DE69317101T DE69317101T2 DE 69317101 T2 DE69317101 T2 DE 69317101T2 DE 69317101 T DE69317101 T DE 69317101T DE 69317101 T DE69317101 T DE 69317101T DE 69317101 T2 DE69317101 T2 DE 69317101T2
Authority
DE
Germany
Prior art keywords
thin film
manufacturing process
film transistor
transistor matrix
matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69317101T
Other languages
English (en)
Other versions
DE69317101D1 (de
Inventor
Ikunori Kobayashi
Mamoru Takeda
Yoshiko Mino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Display Central Inc
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69317101D1 publication Critical patent/DE69317101D1/de
Publication of DE69317101T2 publication Critical patent/DE69317101T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE69317101T 1992-12-22 1993-12-06 Dünnfilm-Transistormatrix und deren Herstellungsverfahren Expired - Lifetime DE69317101T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4341836A JPH06188265A (ja) 1992-12-22 1992-12-22 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE69317101D1 DE69317101D1 (de) 1998-04-02
DE69317101T2 true DE69317101T2 (de) 1998-07-23

Family

ID=18349130

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69317101T Expired - Lifetime DE69317101T2 (de) 1992-12-22 1993-12-06 Dünnfilm-Transistormatrix und deren Herstellungsverfahren

Country Status (4)

Country Link
US (1) US20010002050A1 (de)
EP (1) EP0603622B1 (de)
JP (1) JPH06188265A (de)
DE (1) DE69317101T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5547892A (en) * 1995-04-27 1996-08-20 Taiwan Semiconductor Manufacturing Company Process for forming stacked contacts and metal contacts on static random access memory having thin film transistors
KR100333983B1 (ko) * 1999-05-13 2002-04-26 윤종용 광시야각 액정 표시 장치용 박막 트랜지스터 어레이 기판 및그의 제조 방법
KR100613767B1 (ko) * 1999-11-10 2006-08-18 비오이 하이디스 테크놀로지 주식회사 박막 트랜지스터 액정 표시소자의 제조방법
JP3895952B2 (ja) * 2001-08-06 2007-03-22 日本電気株式会社 半透過型液晶表示装置及びその製造方法
KR100669688B1 (ko) * 2003-03-12 2007-01-18 삼성에스디아이 주식회사 박막트랜지스터 및 이를 구비한 평판표시소자
KR100623247B1 (ko) * 2003-12-22 2006-09-18 삼성에스디아이 주식회사 평판표시장치 및 그의 제조방법
CN103121799A (zh) * 2004-03-09 2013-05-29 出光兴产株式会社 溅射靶、透明导电膜、薄膜晶体管、薄膜晶体管基板及其制造方法及液晶显示装置
JP4761425B2 (ja) * 2004-05-12 2011-08-31 株式会社 日立ディスプレイズ 表示装置および表示装置の製造方法
JP2006148050A (ja) * 2004-10-21 2006-06-08 Seiko Epson Corp 薄膜トランジスタ、電気光学装置、及び電子機器
KR20060059565A (ko) * 2004-11-29 2006-06-02 삼성전자주식회사 다층 배선, 이의 제조 방법 및 이를 갖는 박막트랜지스터
KR101251351B1 (ko) * 2005-12-28 2013-04-05 삼성디스플레이 주식회사 박막트랜지스터 기판, 이의 제조방법 및 이를 갖는표시패널
JP5363009B2 (ja) * 2008-02-29 2013-12-11 株式会社ジャパンディスプレイ 表示装置およびその製造方法
JP5552753B2 (ja) * 2008-10-08 2014-07-16 ソニー株式会社 薄膜トランジスタおよび表示装置
CN102074433B (zh) * 2010-11-29 2012-06-13 广西贺州市桂东电子科技有限责任公司 一种高压节能灯超薄电极箔腐蚀方法
CN114582892A (zh) * 2022-03-04 2022-06-03 广州华星光电半导体显示技术有限公司 阵列基板及显示面板

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0211402B1 (de) * 1985-08-02 1991-05-08 General Electric Company Verfahren und Struktur für dünnfilmtransistorgesteuerte Flüssigkristallmatrixanordnungen
JPH01307280A (ja) * 1988-06-06 1989-12-12 Konica Corp 薄膜素子の製造方法
JP2813234B2 (ja) * 1990-05-16 1998-10-22 日本電信電話株式会社 配線構造
JPH0469979A (ja) * 1990-07-11 1992-03-05 Hitachi Ltd アクティブマトリクス基板の製造方法
JPH04293021A (ja) * 1991-03-22 1992-10-16 Toshiba Corp アクティブマトリックス型液晶表示素子の製造方法

Also Published As

Publication number Publication date
EP0603622A1 (de) 1994-06-29
JPH06188265A (ja) 1994-07-08
US20010002050A1 (en) 2001-05-31
EP0603622B1 (de) 1998-02-25
DE69317101D1 (de) 1998-04-02

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