DE69430501D1 - Dielektrische Dünnfilmanordnung und Herstellungsverfahren - Google Patents

Dielektrische Dünnfilmanordnung und Herstellungsverfahren

Info

Publication number
DE69430501D1
DE69430501D1 DE69430501T DE69430501T DE69430501D1 DE 69430501 D1 DE69430501 D1 DE 69430501D1 DE 69430501 T DE69430501 T DE 69430501T DE 69430501 T DE69430501 T DE 69430501T DE 69430501 D1 DE69430501 D1 DE 69430501D1
Authority
DE
Germany
Prior art keywords
thin film
manufacturing process
dielectric thin
film assembly
assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69430501T
Other languages
English (en)
Other versions
DE69430501T2 (de
Inventor
Yoshiyuki Masuda
Yasushi Ogimoto
Noboru Ootani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE69430501D1 publication Critical patent/DE69430501D1/de
Publication of DE69430501T2 publication Critical patent/DE69430501T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/02—Analysing fluids
    • G01N29/022—Fluid sensors based on microsensors, e.g. quartz crystal-microbalance [QCM], surface acoustic wave [SAW] devices, tuning forks, cantilevers, flexural plate wave [FPW] devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1216—Metal oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1225—Deposition of multilayers of inorganic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
    • H10N15/15—Selection of materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/302—Sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00—Indexing codes associated with group G01N29/00
    • G01N2291/04—Wave modes and trajectories
    • G01N2291/042—Wave modes
    • G01N2291/0427—Flexural waves, plate waves, e.g. Lamb waves, tuning fork, cantilever
DE69430501T 1993-06-23 1994-06-22 Dielektrische Dünnfilmanordnung und Herstellungsverfahren Expired - Fee Related DE69430501T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP15220693 1993-06-23
JP6133156A JPH0773732A (ja) 1993-06-23 1994-06-15 誘電体薄膜素子及びその製造方法

Publications (2)

Publication Number Publication Date
DE69430501D1 true DE69430501D1 (de) 2002-06-06
DE69430501T2 DE69430501T2 (de) 2002-11-07

Family

ID=26467568

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69430501T Expired - Fee Related DE69430501T2 (de) 1993-06-23 1994-06-22 Dielektrische Dünnfilmanordnung und Herstellungsverfahren

Country Status (4)

Country Link
US (1) US5578845A (de)
EP (1) EP0631319B1 (de)
JP (1) JPH0773732A (de)
DE (1) DE69430501T2 (de)

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US5614018A (en) * 1991-12-13 1997-03-25 Symetrix Corporation Integrated circuit capacitors and process for making the same
US6664115B2 (en) * 1992-10-23 2003-12-16 Symetrix Corporation Metal insulator structure with polarization-compatible buffer layer
US5914507A (en) * 1994-05-11 1999-06-22 Regents Of The University Of Minnesota PZT microdevice
US5635741A (en) * 1994-09-30 1997-06-03 Texas Instruments Incorporated Barium strontium titanate (BST) thin films by erbium donor doping
JPH09331020A (ja) * 1996-06-07 1997-12-22 Sharp Corp 誘電体薄膜キャパシタ素子及びその製造方法
US5757042A (en) * 1996-06-14 1998-05-26 Radiant Technologies, Inc. High density ferroelectric memory with increased channel modulation and double word ferroelectric memory cell for constructing the same
JP3193302B2 (ja) * 1996-06-26 2001-07-30 ティーディーケイ株式会社 膜構造体、電子デバイス、記録媒体および強誘電体薄膜の製造方法
DE19735101A1 (de) * 1997-08-13 1999-02-18 Krautkraemer Gmbh Prüfkopf für die Ultraschallprüfung nach dem Impuls-Echo-Verfahren
US6336365B1 (en) * 1999-08-24 2002-01-08 Personal Electronic Devices, Inc. Low-cost accelerometer
JP3482883B2 (ja) * 1998-08-24 2004-01-06 株式会社村田製作所 強誘電体薄膜素子およびその製造方法
SE513809C2 (sv) * 1999-04-13 2000-11-06 Ericsson Telefon Ab L M Avstämbara mikrovågsanordningar
JP2001284671A (ja) * 2000-03-29 2001-10-12 Matsushita Electric Ind Co Ltd 圧電アクチュエータ、インクジェットヘッド及びインクジェット式記録装置
US7058245B2 (en) 2000-04-04 2006-06-06 Waveguide Solutions, Inc. Integrated optical circuits
US6396094B1 (en) * 2000-05-12 2002-05-28 Agilent Technologies, Inc. Oriented rhombohedral composition of PbZr1-xTixO3 thin films for low voltage operation ferroelectric RAM
GB2402936B (en) * 2000-12-20 2005-07-13 Murata Manufacturing Co Translucent ceramic,method of producing the same and optical devices
DE10246584B4 (de) * 2002-10-05 2005-05-19 Fachhochschule Kiel Substrat mit darauf befindlichem keramischen Film und dessen Verwendung
US20050212022A1 (en) * 2004-03-24 2005-09-29 Greer Edward C Memory cell having an electric field programmable storage element, and method of operating same
JP2005285151A (ja) * 2004-03-26 2005-10-13 Seiko Epson Corp 強誘電体メモリの素子構造、並びに非破壊読み出し方法
US7497133B2 (en) 2004-05-24 2009-03-03 Drexel University All electric piezoelectric finger sensor (PEFS) for soft material stiffness measurement
US20070009821A1 (en) * 2005-07-08 2007-01-11 Charlotte Cutler Devices containing multi-bit data
DE102005062872A1 (de) * 2005-09-16 2007-03-29 Robert Bosch Gmbh Piezoelektrische Keramiken als Vibrationssensoren zur Rollerkennung in Reifendrucksystemen
US7942056B2 (en) 2006-01-23 2011-05-17 Drexel University Self-exciting, self-sensing piezoelectric cantilever sensor
US8171795B1 (en) 2006-01-23 2012-05-08 Drexel University Self-exciting, self-sensing piezoelectric cantilever sensor for detection of airborne analytes directly in air
US8623737B2 (en) * 2006-03-31 2014-01-07 Intel Corporation Sol-gel and mask patterning for thin-film capacitor fabrication, thin-film capacitors fabricated thereby, and systems containing same
WO2007133619A1 (en) 2006-05-10 2007-11-22 Drexel University Molecular control of surface coverage
US8481335B2 (en) 2006-11-27 2013-07-09 Drexel University Specificity and sensitivity enhancement in cantilever sensing
WO2008067386A2 (en) 2006-11-28 2008-06-05 Drexel University Piezoelectric microcantilever sensors for biosensing
US7992431B2 (en) 2006-11-28 2011-08-09 Drexel University Piezoelectric microcantilevers and uses in atomic force microscopy
JP2010518380A (ja) 2007-02-01 2010-05-27 ドレクセル・ユニバーシティー センサー用途向けハンドヘルド型位相シフト検出器
US8512947B2 (en) 2007-02-16 2013-08-20 Drexel University Detection of nucleic acids using a cantilever sensor
WO2008101199A1 (en) 2007-02-16 2008-08-21 Drexel University Enhanced sensitivity of a cantilever sensor via specific bindings
US7993854B2 (en) 2007-05-30 2011-08-09 Drexel University Detection and quantification of biomarkers via a piezoelectric cantilever sensor
WO2009021058A2 (en) * 2007-08-06 2009-02-12 Trinity Labortories, Inc. Pharmaceutical compositions for treating chronic pain and pain associated with neuropathy
WO2009079154A2 (en) 2007-11-23 2009-06-25 Drexel University Lead-free piezoelectric ceramic films and a method for making thereof
US8236508B2 (en) 2008-01-29 2012-08-07 Drexel University Detecting and measuring live pathogens utilizing a mass detection device
US8741663B2 (en) 2008-03-11 2014-06-03 Drexel University Enhanced detection sensitivity with piezoelectric sensors
CN102066928B (zh) 2008-05-16 2015-08-05 德瑞索大学 评估组织的系统和方法
KR100913424B1 (ko) * 2008-07-01 2009-08-21 한국과학기술원 수동 매트릭스-어드레스 가능한 메모리 장치
US8722427B2 (en) 2009-10-08 2014-05-13 Drexel University Determination of dissociation constants using piezoelectric microcantilevers
JP6079080B2 (ja) * 2012-09-18 2017-02-15 株式会社リコー 電気−機械変換素子の製造方法、電気−機械変換素子、該電気−機械変換素子を備えた液滴吐出ヘッド、液滴吐出装置。
WO2017106209A1 (en) 2015-12-13 2017-06-22 GenXComm, Inc. Interference cancellation methods and apparatus
US10257746B2 (en) 2016-07-16 2019-04-09 GenXComm, Inc. Interference cancellation methods and apparatus
US11550172B2 (en) * 2017-12-05 2023-01-10 Hamamatsu Photonics K.K. Reflective spatial light modulator having a perovskite-type electro-optic crystal, optical observation device including same, and light irradiation device including same
US11215755B2 (en) 2019-09-19 2022-01-04 GenXComm, Inc. Low loss, polarization-independent, large bandwidth mode converter for edge coupling
US11539394B2 (en) 2019-10-29 2022-12-27 GenXComm, Inc. Self-interference mitigation in in-band full-duplex communication systems
US20210336050A1 (en) * 2020-04-24 2021-10-28 GenXComm, Inc. Solid-State Device with Optical Waveguide as Floating Gate Electrode
US11796737B2 (en) 2020-08-10 2023-10-24 GenXComm, Inc. Co-manufacturing of silicon-on-insulator waveguides and silicon nitride waveguides for hybrid photonic integrated circuits
WO2023075850A1 (en) 2021-10-25 2023-05-04 GenXComm, Inc. Hybrid photonic integrated circuits for ultra-low phase noise signal generators

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JPS5241879B2 (de) * 1972-01-13 1977-10-20
JPH0818871B2 (ja) * 1986-12-17 1996-02-28 日本電装株式会社 ジルコン酸チタン酸鉛系圧電磁器の製造方法
US5112433A (en) * 1988-12-09 1992-05-12 Battelle Memorial Institute Process for producing sub-micron ceramic powders of perovskite compounds with controlled stoichiometry and particle size
DE375594T1 (de) * 1988-12-23 1990-11-08 United Technologies Corp., Hartford, Conn., Us Herstellung duenner ferroelektrischer filme.
WO1990012755A1 (en) * 1989-04-21 1990-11-01 Alcan International Limited Preparation of thin film ceramics by sol gel processing
JP2891304B2 (ja) * 1990-11-16 1999-05-17 三菱マテリアル株式会社 超高純度強誘電体薄膜
EP0516031A1 (de) * 1991-05-29 1992-12-02 Ramtron International Corporation Ferroelektrische Stapelspeicherzelle und Herstellungsverfahren

Also Published As

Publication number Publication date
EP0631319A1 (de) 1994-12-28
DE69430501T2 (de) 2002-11-07
US5578845A (en) 1996-11-26
EP0631319B1 (de) 2002-05-02
JPH0773732A (ja) 1995-03-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee