DE69223118T2 - Dünnschicht-Transistor-Panel und dessen Herstellungsmethode - Google Patents

Dünnschicht-Transistor-Panel und dessen Herstellungsmethode

Info

Publication number
DE69223118T2
DE69223118T2 DE69223118T DE69223118T DE69223118T2 DE 69223118 T2 DE69223118 T2 DE 69223118T2 DE 69223118 T DE69223118 T DE 69223118T DE 69223118 T DE69223118 T DE 69223118T DE 69223118 T2 DE69223118 T2 DE 69223118T2
Authority
DE
Germany
Prior art keywords
manufacturing
thin film
film transistor
transistor panel
panel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69223118T
Other languages
English (en)
Other versions
DE69223118D1 (de
Inventor
Kunihiro Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP33555391A external-priority patent/JP3114303B2/ja
Priority claimed from JP33587591A external-priority patent/JP3168648B2/ja
Priority claimed from JP35132891A external-priority patent/JP3104356B2/ja
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Application granted granted Critical
Publication of DE69223118D1 publication Critical patent/DE69223118D1/de
Publication of DE69223118T2 publication Critical patent/DE69223118T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13458—Terminal pads
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
DE69223118T 1991-11-26 1992-09-04 Dünnschicht-Transistor-Panel und dessen Herstellungsmethode Expired - Fee Related DE69223118T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP33555391A JP3114303B2 (ja) 1991-11-26 1991-11-26 薄膜トランジスタパネル及びその製造方法
JP33587591A JP3168648B2 (ja) 1991-11-27 1991-11-27 薄膜トランジスタパネルの製造方法
JP35132891A JP3104356B2 (ja) 1991-12-13 1991-12-13 薄膜トランジスタパネルおよびその製造方法

Publications (2)

Publication Number Publication Date
DE69223118D1 DE69223118D1 (de) 1997-12-18
DE69223118T2 true DE69223118T2 (de) 1998-03-05

Family

ID=27340728

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69223118T Expired - Fee Related DE69223118T2 (de) 1991-11-26 1992-09-04 Dünnschicht-Transistor-Panel und dessen Herstellungsmethode

Country Status (2)

Country Link
EP (1) EP0544069B1 (de)
DE (1) DE69223118T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4310640C1 (de) * 1993-03-31 1994-05-11 Lueder Ernst Verfahren zur Herstellung einer Matrix aus a-Si:H-Dünnschichttransistoren
KR100190041B1 (ko) * 1995-12-28 1999-06-01 윤종용 액정표시장치의 제조방법
JP4700160B2 (ja) 2000-03-13 2011-06-15 株式会社半導体エネルギー研究所 半導体装置
KR100825907B1 (ko) 2000-05-13 2008-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제작방법
JP4350106B2 (ja) * 2005-06-29 2009-10-21 三星モバイルディスプレイ株式會社 平板表示装置及びその駆動方法
KR101671210B1 (ko) 2009-03-06 2016-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR101787353B1 (ko) 2009-11-13 2017-10-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011058913A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP2517245B1 (de) 2009-12-25 2019-07-24 Semiconductor Energy Laboratory Co. Ltd. Halbleiterbauelement

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0682839B2 (ja) * 1984-08-21 1994-10-19 セイコー電子工業株式会社 表示用パネルの製造方法
GB2223353A (en) * 1988-09-30 1990-04-04 Philips Electronic Associated Thin-film transistor
DE68921567T2 (de) * 1988-11-30 1995-07-06 Nec Corp Flüssigkristallanzeigetafel mit verminderten Pixeldefekten.

Also Published As

Publication number Publication date
EP0544069B1 (de) 1997-11-12
EP0544069A1 (de) 1993-06-02
DE69223118D1 (de) 1997-12-18

Similar Documents

Publication Publication Date Title
DE68923054T2 (de) Dünnschicht-Transistortafel und Herstellungsverfahren.
DE69432991D1 (de) Dünnfilmtransistor und Anzeigevorrichtung unter Verwendung desselben
DE69125886T2 (de) Dünnfilmtransistoren
EP0494628A3 (en) Multigato soi-type thin film transistor and manufacturing method therefor
EP0566838A3 (en) Manufacturing method of thin film transistor
DE69122043D1 (de) Vertikaler SOI-Feldeffekttransistor und dessen Herstellungsprozess
DE69123950D1 (de) SOI-Feldeffekttransistor und dessen Herstellungsverfahren
DE69213069D1 (de) Matter Film und dessen Herstellungsverfahren
DE69219403T2 (de) Plattenverstärkendes Folienmaterial sowie dasselbe gebrauchende äussere Fahrzeugpaneelstruktur
DE69215429D1 (de) Dünnfilm-Feldeffekttransistor und statische und Herstellungsmethode dafür
DE69317101D1 (de) Dünnfilm-Transistormatrix und deren Herstellungsverfahren
DE69431971D1 (de) Dünnschichtkondensator und Herstellungsverfahren
DE69215608T2 (de) Dünnschichttransistor und dessen Herstellungsmethode
DE69223118T2 (de) Dünnschicht-Transistor-Panel und dessen Herstellungsmethode
DE69420879D1 (de) Dünnfilmmagnetkopf und dessen Herstellungsverfahren
DE69524178D1 (de) Dünnfilmtransistor und dessen Herstellungsverfahren
EP0519692A3 (en) Thin film transistor and method for manufacturing the same
DE69303546D1 (de) Herstellungsmethode eines Dünnschicht-Transistor-Paneels
DE69219623T2 (de) Dünnfilmsupraleiter und Herstellungsmethode
KR900008682A (ko) 평판 디스플레이용 박막트랜지스터 및 그 제조방법
KR100216698B1 (en) Manufacturing method of the thin film transistor
KR950004835U (ko) 박막트랜지스터
KR950010206U (ko) 박막트랜지스터
KR950021401U (ko) 박막트랜지스터
KR950002252U (ko) 박막 트랜지스터

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee