DE69122043D1 - Vertikaler SOI-Feldeffekttransistor und dessen Herstellungsprozess - Google Patents
Vertikaler SOI-Feldeffekttransistor und dessen HerstellungsprozessInfo
- Publication number
- DE69122043D1 DE69122043D1 DE69122043T DE69122043T DE69122043D1 DE 69122043 D1 DE69122043 D1 DE 69122043D1 DE 69122043 T DE69122043 T DE 69122043T DE 69122043 T DE69122043 T DE 69122043T DE 69122043 D1 DE69122043 D1 DE 69122043D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing process
- field effect
- effect transistor
- soi field
- vertical soi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66666—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66893—Unipolar field-effect transistors with a PN junction gate, i.e. JFET
- H01L29/66901—Unipolar field-effect transistors with a PN junction gate, i.e. JFET with a PN homojunction gate
- H01L29/66909—Vertical transistors, e.g. tecnetrons
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78642—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31959790A JPH04192369A (ja) | 1990-11-23 | 1990-11-23 | 縦チャンネルfetの製造方法 |
JP31959690A JPH04192368A (ja) | 1990-11-23 | 1990-11-23 | 縦チャンネルfet |
JP31939890A JPH04192367A (ja) | 1990-11-24 | 1990-11-24 | 縦チャンネルfetの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69122043D1 true DE69122043D1 (de) | 1996-10-17 |
DE69122043T2 DE69122043T2 (de) | 1997-04-10 |
Family
ID=27339720
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69122043T Expired - Fee Related DE69122043T2 (de) | 1990-11-23 | 1991-11-21 | Vertikaler SOI-Feldeffekttransistor und dessen Herstellungsprozess |
Country Status (4)
Country | Link |
---|---|
US (1) | US5312782A (de) |
EP (1) | EP0487083B1 (de) |
KR (1) | KR920010963A (de) |
DE (1) | DE69122043T2 (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2786081B2 (ja) * | 1993-07-27 | 1998-08-13 | 日本電気株式会社 | Soi基板 |
US5793107A (en) * | 1993-10-29 | 1998-08-11 | Vlsi Technology, Inc. | Polysilicon pillar heat sinks for semiconductor on insulator circuits |
JP3338178B2 (ja) * | 1994-05-30 | 2002-10-28 | 株式会社東芝 | 半導体装置およびその製造方法 |
JPH0855978A (ja) * | 1994-06-09 | 1996-02-27 | Ngk Insulators Ltd | 半導体装置およびその製造方法 |
US5496764A (en) * | 1994-07-05 | 1996-03-05 | Motorola, Inc. | Process for forming a semiconductor region adjacent to an insulating layer |
JPH0878436A (ja) * | 1994-09-05 | 1996-03-22 | Mitsubishi Electric Corp | 半導体装置 |
US5581101A (en) * | 1995-01-03 | 1996-12-03 | International Business Machines Corporation | FET and/or bipolar devices formed in thin vertical silicon on insulator (SOI) structures |
SE9601179D0 (sv) * | 1996-03-27 | 1996-03-27 | Abb Research Ltd | A field controlled semiconductor device of SiC and a method for production thereof |
US5929476A (en) * | 1996-06-21 | 1999-07-27 | Prall; Kirk | Semiconductor-on-insulator transistor and memory circuitry employing semiconductor-on-insulator transistors |
US6268621B1 (en) | 1999-08-03 | 2001-07-31 | International Business Machines Corporation | Vertical channel field effect transistor |
US6500744B2 (en) | 1999-09-02 | 2002-12-31 | Micron Technology, Inc. | Methods of forming DRAM assemblies, transistor devices, and openings in substrates |
GB2362755A (en) * | 2000-05-25 | 2001-11-28 | Nanogate Ltd | Thin film field effect transistor with a conical structure |
SE519528C2 (sv) * | 2000-08-04 | 2003-03-11 | Ericsson Telefon Ab L M | Anordning i en effekt-MOS-transistor |
US6465331B1 (en) * | 2000-08-31 | 2002-10-15 | Micron Technology, Inc. | DRAM fabricated on a silicon-on-insulator (SOI) substrate having bi-level digit lines |
US6599789B1 (en) * | 2000-11-15 | 2003-07-29 | Micron Technology, Inc. | Method of forming a field effect transistor |
US6406962B1 (en) | 2001-01-17 | 2002-06-18 | International Business Machines Corporation | Vertical trench-formed dual-gate FET device structure and method for creation |
US6690040B2 (en) * | 2001-09-10 | 2004-02-10 | Agere Systems Inc. | Vertical replacement-gate junction field-effect transistor |
US7071043B2 (en) | 2002-08-15 | 2006-07-04 | Micron Technology, Inc. | Methods of forming a field effect transistor having source/drain material over insulative material |
US20040036131A1 (en) * | 2002-08-23 | 2004-02-26 | Micron Technology, Inc. | Electrostatic discharge protection devices having transistors with textured surfaces |
US6794699B2 (en) * | 2002-08-29 | 2004-09-21 | Micron Technology Inc | Annular gate and technique for fabricating an annular gate |
KR100568858B1 (ko) * | 2003-07-24 | 2006-04-10 | 삼성전자주식회사 | 수직 이중 채널을 갖는 soi 트랜지스터의 제조 방법 및그에 따른 구조 |
TWI251342B (en) * | 2003-07-24 | 2006-03-11 | Samsung Electronics Co Ltd | Vertical double-channel silicon-on-insulator transistor and method of manufacturing the same |
US7372091B2 (en) * | 2004-01-27 | 2008-05-13 | Micron Technology, Inc. | Selective epitaxy vertical integrated circuit components |
US7504685B2 (en) * | 2005-06-28 | 2009-03-17 | Micron Technology, Inc. | Oxide epitaxial isolation |
US7923373B2 (en) | 2007-06-04 | 2011-04-12 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
US8823090B2 (en) * | 2011-02-17 | 2014-09-02 | International Business Machines Corporation | Field-effect transistor and method of creating same |
US11615992B2 (en) | 2020-01-15 | 2023-03-28 | International Business Machines Corporation | Substrate isolated VTFET devices |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59159563A (ja) * | 1983-03-02 | 1984-09-10 | Toshiba Corp | 半導体装置の製造方法 |
JPS60128654A (ja) * | 1983-12-16 | 1985-07-09 | Hitachi Ltd | 半導体集積回路 |
JPS6340376A (ja) * | 1986-08-05 | 1988-02-20 | Mitsubishi Electric Corp | 電界効果型半導体装置 |
DE68926793T2 (de) * | 1988-03-15 | 1997-01-09 | Toshiba Kawasaki Kk | Dynamischer RAM |
DE68916401T2 (de) * | 1988-10-03 | 1994-11-17 | Toshiba Kawasaki Kk | Feldeffekttransistor auf einem Isolator und Verfahren zu seiner Herstellung. |
JPH06340376A (ja) * | 1993-05-31 | 1994-12-13 | Tokyo Electric Co Ltd | コード巻取装置 |
-
1991
- 1991-11-20 KR KR1019910020664A patent/KR920010963A/ko not_active Application Discontinuation
- 1991-11-21 US US07/795,961 patent/US5312782A/en not_active Expired - Fee Related
- 1991-11-21 DE DE69122043T patent/DE69122043T2/de not_active Expired - Fee Related
- 1991-11-21 EP EP91119874A patent/EP0487083B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR920010963A (ko) | 1992-06-27 |
EP0487083B1 (de) | 1996-09-11 |
EP0487083A2 (de) | 1992-05-27 |
US5312782A (en) | 1994-05-17 |
EP0487083A3 (en) | 1992-08-26 |
DE69122043T2 (de) | 1997-04-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |