DE69132792T2 - Organisches Bauelement und dessen Herstellungsverfahren - Google Patents

Organisches Bauelement und dessen Herstellungsverfahren

Info

Publication number
DE69132792T2
DE69132792T2 DE69132792T DE69132792T DE69132792T2 DE 69132792 T2 DE69132792 T2 DE 69132792T2 DE 69132792 T DE69132792 T DE 69132792T DE 69132792 T DE69132792 T DE 69132792T DE 69132792 T2 DE69132792 T2 DE 69132792T2
Authority
DE
Germany
Prior art keywords
manufacturing process
organic component
organic
component
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69132792T
Other languages
English (en)
Other versions
DE69132792D1 (de
Inventor
Kazufumi Ogawa
Norihisa Mino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69132792D1 publication Critical patent/DE69132792D1/de
Publication of DE69132792T2 publication Critical patent/DE69132792T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/701—Langmuir Blodgett films
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/901—Printed circuit
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
DE69132792T 1990-07-31 1991-04-26 Organisches Bauelement und dessen Herstellungsverfahren Expired - Lifetime DE69132792T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2203281A JP2507153B2 (ja) 1990-07-31 1990-07-31 有機デバイスとその製造方法

Publications (2)

Publication Number Publication Date
DE69132792D1 DE69132792D1 (de) 2001-12-06
DE69132792T2 true DE69132792T2 (de) 2002-08-14

Family

ID=16471454

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69132792T Expired - Lifetime DE69132792T2 (de) 1990-07-31 1991-04-26 Organisches Bauelement und dessen Herstellungsverfahren

Country Status (4)

Country Link
US (2) US5223331A (de)
EP (1) EP0469243B1 (de)
JP (1) JP2507153B2 (de)
DE (1) DE69132792T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2889768B2 (ja) * 1992-09-10 1999-05-10 松下電器産業株式会社 ３−チエニル基含有ケイ素化合物及びその製造方法
KR100272702B1 (ko) * 1996-03-26 2000-11-15 윤종용 터널 효과 장치 및 그 제조 방법
US6524874B1 (en) 1998-08-05 2003-02-25 Micron Technology, Inc. Methods of forming field emission tips using deposited particles as an etch mask
US6339227B1 (en) 1999-02-01 2002-01-15 The Mitre Corporation Monomolecular electronic device
US6207578B1 (en) 1999-02-19 2001-03-27 Micron Technology, Inc. Methods of forming patterned constructions, methods of patterning semiconductive substrates, and methods of forming field emission displays
GB9930217D0 (en) 1999-12-21 2000-02-09 Univ Cambridge Tech Solutiion processed transistors
CN1245769C (zh) * 1999-12-21 2006-03-15 造型逻辑有限公司 溶液加工
IL134295A0 (en) * 2000-01-31 2001-04-30 Yeda Res & Dev A hybrid organic-inorganic semiconductor device and a method of its fabrication
KR100462712B1 (ko) * 2000-08-10 2004-12-20 마쯔시다덴기산교 가부시키가이샤 유기전자장치와 그 제조방법과 그 동작방법 및 그것을 사용한 표시장치
TW555790B (en) 2000-12-26 2003-10-01 Matsushita Electric Ind Co Ltd Conductive organic thin film, process for producing the same, and organic photoelectronic device, electric wire, and electrode aech employing the same
CN100585751C (zh) * 2001-04-17 2010-01-27 松下电器产业株式会社 导电性有机薄膜及其制造方法和使用其的电极与电缆
US20020167003A1 (en) * 2001-04-18 2002-11-14 Campbell Ian H. Chemical and biological sensor using organic self-assembled transitors
US7662009B2 (en) 2001-08-10 2010-02-16 Panasonic Corporation Organic electronic device, method of producing the same, and method of operating the same
CN100479220C (zh) * 2002-02-08 2009-04-15 松下电器产业株式会社 有机电子器件及其生产方法
JP4598673B2 (ja) * 2003-06-13 2010-12-15 パナソニック株式会社 発光素子及び表示装置
US7050146B2 (en) * 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005090365A1 (ja) * 2004-03-18 2005-09-29 Sharp Kabushiki Kaisha 有機シラン化合物、その製造方法及びその用途
JP2006062965A (ja) * 2004-08-24 2006-03-09 Sharp Corp 有機シラン化合物、該化合物の製造方法および該化合物を用いた有機薄膜
JP2010080759A (ja) * 2008-09-26 2010-04-08 Sharp Corp 有機デバイスとその製造方法
EP4186947A1 (de) * 2021-11-26 2023-05-31 Henkel AG & Co. KGaA Polyorganosiloxan mit heteroatomhaltiger silylgruppe

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61163658A (ja) * 1985-01-12 1986-07-24 Mitsubishi Electric Corp Ｍｉｓダイオ−ドの製造方法
JPS6221151A (ja) * 1985-07-19 1987-01-29 Matsushita Electric Ind Co Ltd パタ−ン形成方法
US4835083A (en) * 1986-04-16 1989-05-30 Canon Kabushiki Kaisha Method for patterning electroconductive film and patterned electroconductive film
JPH0638491B2 (ja) * 1986-07-04 1994-05-18 三菱電機株式会社 電界効果型トランジスタ
GB8715959D0 (en) * 1987-07-07 1987-08-12 British Petroleum Co Plc Field effect transistors
EP0584891B1 (de) * 1988-06-28 1997-03-12 Matsushita Electric Industrial Co., Ltd. Verfahren zur Herstellung von aus monomolekularen Schichten aufgebauten Filmen unter Anwendung von Silanen, die Acetylen- bindungen enthalten
JPH0766990B2 (ja) * 1988-07-15 1995-07-19 松下電器産業株式会社 有機デバイスおよびその製造方法
JPH06144921A (ja) * 1992-11-10 1994-05-24 Seiko Instr Inc ジルコニアセラミックスコンパウンド廃材の再生方法

Also Published As

Publication number Publication date
US5223331A (en) 1993-06-29
DE69132792D1 (de) 2001-12-06
EP0469243A1 (de) 1992-02-05
JPH0488678A (ja) 1992-03-23
EP0469243B1 (de) 2001-10-31
US5681442A (en) 1997-10-28
JP2507153B2 (ja) 1996-06-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP