DE69304626D1 - Quanteneffektbauelement und dessen Herstellungsverfahren - Google Patents
Quanteneffektbauelement und dessen HerstellungsverfahrenInfo
- Publication number
- DE69304626D1 DE69304626D1 DE69304626T DE69304626T DE69304626D1 DE 69304626 D1 DE69304626 D1 DE 69304626D1 DE 69304626 T DE69304626 T DE 69304626T DE 69304626 T DE69304626 T DE 69304626T DE 69304626 D1 DE69304626 D1 DE 69304626D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing process
- effect device
- quantum effect
- quantum
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1037—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure and non-planar channel
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66931—BJT-like unipolar transistors, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunneling transistor [RTT], bulk barrier transistor [BBT], planar doped barrier transistor [PDBT], charge injection transistor [CHINT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/88—Tunnel-effect diodes
- H01L29/882—Resonant tunneling diodes, i.e. RTD, RTBD
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/911—Differential oxidation and etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/962—Quantum dots and lines
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17659792A JP3182892B2 (ja) | 1992-07-03 | 1992-07-03 | 量子素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69304626D1 true DE69304626D1 (de) | 1996-10-17 |
DE69304626T2 DE69304626T2 (de) | 1997-04-17 |
Family
ID=16016356
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69304626T Expired - Lifetime DE69304626T2 (de) | 1992-07-03 | 1993-07-02 | Quanteneffektbauelement und dessen Herstellungsverfahren |
DE69315092T Expired - Fee Related DE69315092T2 (de) | 1992-07-03 | 1993-07-02 | Quanteneffekt-Bauelement |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69315092T Expired - Fee Related DE69315092T2 (de) | 1992-07-03 | 1993-07-02 | Quanteneffekt-Bauelement |
Country Status (5)
Country | Link |
---|---|
US (2) | US5444267A (de) |
EP (2) | EP0709895B1 (de) |
JP (1) | JP3182892B2 (de) |
KR (1) | KR970005145B1 (de) |
DE (2) | DE69304626T2 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5962863A (en) * | 1993-09-09 | 1999-10-05 | The United States Of America As Represented By The Secretary Of The Navy | Laterally disposed nanostructures of silicon on an insulating substrate |
US5659179A (en) * | 1995-03-07 | 1997-08-19 | Motorola | Ultra-small semiconductor devices having patterned edge planar surfaces |
US5945687A (en) * | 1995-11-30 | 1999-08-31 | Matsushita Electric Industrial Co., Ltd. | Quantization functional device, quantization functional apparatus utilizing the same, and method for producing the same |
JPH09312378A (ja) * | 1996-03-19 | 1997-12-02 | Fujitsu Ltd | 半導体装置及びその製造方法 |
US6091077A (en) | 1996-10-22 | 2000-07-18 | Matsushita Electric Industrial Co., Ltd. | MIS SOI semiconductor device with RTD and/or HET |
US5945686A (en) * | 1997-04-28 | 1999-08-31 | Hitachi, Ltd. | Tunneling electronic device |
FR2791474B1 (fr) * | 1999-03-26 | 2001-06-08 | Centre Nat Rech Scient | Detecteur infrarouge semi-conducteur et son procede de fabrication |
GB0109782D0 (en) * | 2001-04-20 | 2001-06-13 | Btg Int Ltd | Nanoelectronic devices and circuits |
KR102608959B1 (ko) * | 2017-09-04 | 2023-12-01 | 삼성전자주식회사 | 2차원 물질을 포함하는 소자 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4912531A (en) | 1984-06-29 | 1990-03-27 | Texas Instruments Incorporated | Three-terminal quantum device |
US5032877A (en) * | 1984-07-02 | 1991-07-16 | Texas Instruments Incorporated | Quantum-coupled ROM |
US4959696A (en) * | 1985-08-23 | 1990-09-25 | Texas Instruments Incorporated | Three terminal tunneling device and method |
US4751194A (en) * | 1986-06-27 | 1988-06-14 | American Telephone And Telegraph Company, At&T Bell Laboratories | Structures including quantum well wires and boxes |
US4780749A (en) * | 1986-07-01 | 1988-10-25 | Hughes Aircraft Company | Double barrier tunnel diode having modified injection layer |
JP2531655B2 (ja) * | 1987-01-16 | 1996-09-04 | 株式会社日立製作所 | 半導体装置 |
JPS63316484A (ja) * | 1987-06-19 | 1988-12-23 | Fujitsu Ltd | 量子効果半導体装置 |
US4926232A (en) * | 1987-09-02 | 1990-05-15 | Nec Corporation | Resonant-tunneling bipolar transistor |
NL8703119A (nl) * | 1987-12-23 | 1989-07-17 | Philips Nv | Element voor toepassing in een elektrische schakeling. |
DE3810768A1 (de) * | 1988-03-30 | 1989-10-12 | Licentia Gmbh | Steuerbarer elektrischer leiter |
EP0394757B1 (de) * | 1989-04-27 | 1998-10-07 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Halbleiterstruktur mit einer 2D-Ladungsträgerschicht und Herstellungsverfahren |
US5233205A (en) * | 1989-09-25 | 1993-08-03 | Hitachi, Ltd. | Quantum wave circuit |
JPH03196573A (ja) * | 1989-12-26 | 1991-08-28 | Hitachi Ltd | 半導体装置 |
-
1992
- 1992-07-03 JP JP17659792A patent/JP3182892B2/ja not_active Expired - Fee Related
-
1993
- 1993-07-02 KR KR1019930012374A patent/KR970005145B1/ko not_active IP Right Cessation
- 1993-07-02 DE DE69304626T patent/DE69304626T2/de not_active Expired - Lifetime
- 1993-07-02 DE DE69315092T patent/DE69315092T2/de not_active Expired - Fee Related
- 1993-07-02 EP EP95119854A patent/EP0709895B1/de not_active Expired - Lifetime
- 1993-07-02 EP EP93110609A patent/EP0577137B1/de not_active Expired - Lifetime
-
1994
- 1994-10-28 US US08/331,270 patent/US5444267A/en not_active Expired - Lifetime
-
1995
- 1995-04-10 US US08/419,179 patent/US5562802A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0577137A1 (de) | 1994-01-05 |
EP0577137B1 (de) | 1996-09-11 |
DE69304626T2 (de) | 1997-04-17 |
US5562802A (en) | 1996-10-08 |
US5444267A (en) | 1995-08-22 |
EP0709895B1 (de) | 1997-11-05 |
EP0709895A3 (de) | 1996-07-31 |
JPH0621434A (ja) | 1994-01-28 |
DE69315092D1 (de) | 1997-12-11 |
EP0709895A2 (de) | 1996-05-01 |
KR940006299A (ko) | 1994-03-23 |
JP3182892B2 (ja) | 2001-07-03 |
DE69315092T2 (de) | 1998-03-19 |
KR970005145B1 (ko) | 1997-04-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: NEW ENERGY AND INDUSTRIAL TECHNOLOGY DEVELOPMENT O |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: NEW ENERGY AND INDUSTRIAL TECHNOLOGY DEVELOPME, JP Owner name: PANASONIC CORP., KADOMA, OSAKA, JP |