DE69301885D1 - Quantenbauelement und dessen Herstellungsverfahren - Google Patents

Quantenbauelement und dessen Herstellungsverfahren

Info

Publication number
DE69301885D1
DE69301885D1 DE69301885T DE69301885T DE69301885D1 DE 69301885 D1 DE69301885 D1 DE 69301885D1 DE 69301885 T DE69301885 T DE 69301885T DE 69301885 T DE69301885 T DE 69301885T DE 69301885 D1 DE69301885 D1 DE 69301885D1
Authority
DE
Germany
Prior art keywords
manufacturing process
quantum device
quantum
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69301885T
Other languages
English (en)
Other versions
DE69301885T2 (de
Inventor
Ryuichi Ugajin
Ichiro Hase
Kazumasa Nomoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP23772392A external-priority patent/JP3297934B2/ja
Priority claimed from JP28534192A external-priority patent/JP3297758B2/ja
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE69301885D1 publication Critical patent/DE69301885D1/de
Application granted granted Critical
Publication of DE69301885T2 publication Critical patent/DE69301885T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/122Single quantum well structures
    • H01L29/125Quantum wire structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/122Single quantum well structures
    • H01L29/127Quantum box structures
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/962Quantum dots and lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Junction Field-Effect Transistors (AREA)
DE69301885T 1992-08-13 1993-08-11 Quantenbauelement und dessen Herstellungsverfahren Expired - Fee Related DE69301885T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP23772392A JP3297934B2 (ja) 1992-08-13 1992-08-13 量子箱結合素子
JP28534192A JP3297758B2 (ja) 1992-09-30 1992-09-30 量子素子及びその製造方法

Publications (2)

Publication Number Publication Date
DE69301885D1 true DE69301885D1 (de) 1996-04-25
DE69301885T2 DE69301885T2 (de) 1996-10-31

Family

ID=26533334

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69301885T Expired - Fee Related DE69301885T2 (de) 1992-08-13 1993-08-11 Quantenbauelement und dessen Herstellungsverfahren

Country Status (3)

Country Link
US (1) US5643828A (de)
EP (1) EP0588062B1 (de)
DE (1) DE69301885T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5981316A (en) * 1994-11-08 1999-11-09 The Board Of Trustees Of The Leland Stanford Junior University Method of fabrication of atomic chain circuit network
US6331454B1 (en) 1994-11-08 2001-12-18 Board Of Regents Of The Leland Stanford Junior University Atomic-level electronic network and method of fabrication
US5976957A (en) * 1996-10-28 1999-11-02 Sony Corporation Method of making silicon quantum wires on a substrate
GB2328096B (en) * 1997-08-01 2001-10-17 Simon Charles Benjamin Cellular circuitry
US6100202A (en) * 1997-12-08 2000-08-08 Taiwan Semiconductor Manufacturing Company Pre deposition stabilization method for forming a void free isotropically etched anisotropically patterned doped silicate glass layer
US6265329B1 (en) * 1998-03-09 2001-07-24 Motorola, Inc. Quantum deposition distribution control
US20030156781A1 (en) * 2000-05-17 2003-08-21 Boris Pavlov Quantum domain relay
DE10044040A1 (de) * 2000-08-30 2002-03-14 Univ Berlin Tech Verfahren zur Verbesserung der Effizienz von epitaktisch hergestellten Quantenpunkt-Halbleiterbauelementen mit einer oder mehreren Quantenpunktschichten
WO2009153669A2 (en) * 2008-06-17 2009-12-23 National Research Council Of Canada Atomistic quantum dots

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3574082D1 (en) * 1984-07-02 1989-12-07 Texas Instruments Inc Quantum-coupled device
JP3149030B2 (ja) * 1991-06-13 2001-03-26 富士通株式会社 半導体量子箱装置及びその製造方法

Also Published As

Publication number Publication date
EP0588062A1 (de) 1994-03-23
DE69301885T2 (de) 1996-10-31
US5643828A (en) 1997-07-01
EP0588062B1 (de) 1996-03-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee