DE69500375D1 - Quantenfadenvorrichtung und Herstellungsverfahren - Google Patents

Quantenfadenvorrichtung und Herstellungsverfahren

Info

Publication number
DE69500375D1
DE69500375D1 DE69500375T DE69500375T DE69500375D1 DE 69500375 D1 DE69500375 D1 DE 69500375D1 DE 69500375 T DE69500375 T DE 69500375T DE 69500375 T DE69500375 T DE 69500375T DE 69500375 D1 DE69500375 D1 DE 69500375D1
Authority
DE
Germany
Prior art keywords
manufacturing
thread device
quantum
quantum thread
thread
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69500375T
Other languages
English (en)
Other versions
DE69500375T2 (de
Inventor
Timothy David Bestwick
Martin David Dawson
Alistair Henderson Kean
Geoffrey Duggan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE69500375D1 publication Critical patent/DE69500375D1/de
Application granted granted Critical
Publication of DE69500375T2 publication Critical patent/DE69500375T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/122—Single quantum well structures
    • H01L29/125—Quantum wire structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/122—Single quantum well structures
    • H01L29/127—Quantum box structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66469—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with one- or zero-dimensional channel, e.g. quantum wire field-effect transistors, in-plane gate transistors [IPG], single electron transistors [SET], Coulomb blockade transistors, striped channel transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/962—Quantum dots and lines
DE69500375T 1994-03-31 1995-03-16 Quantenfadenvorrichtung und Herstellungsverfahren Expired - Fee Related DE69500375T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9406488A GB2288274A (en) 1994-03-31 1994-03-31 Quantum device and method of making such a device

Publications (2)

Publication Number Publication Date
DE69500375D1 true DE69500375D1 (de) 1997-07-31
DE69500375T2 DE69500375T2 (de) 1998-01-22

Family

ID=10752881

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69500375T Expired - Fee Related DE69500375T2 (de) 1994-03-31 1995-03-16 Quantenfadenvorrichtung und Herstellungsverfahren

Country Status (5)

Country Link
US (1) US5571376A (de)
EP (1) EP0678946B1 (de)
JP (1) JP3575863B2 (de)
DE (1) DE69500375T2 (de)
GB (1) GB2288274A (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2119697B1 (es) * 1996-09-13 1999-04-16 Infrarrojo Y Microelectronica Fotosensor vectorial.
JP2958442B2 (ja) * 1996-09-18 1999-10-06 科学技術庁金属材料技術研究所長 半導体量子箱の形成方法
KR100234001B1 (ko) * 1996-10-30 1999-12-15 박호군 양자세선 레이저 다이오드 제작방법
KR100238452B1 (ko) * 1997-08-05 2000-01-15 정선종 초미세 구조 일괄 성장방법
GB2338592A (en) * 1998-06-19 1999-12-22 Secr Defence Single electron transistor
US6235638B1 (en) * 1999-02-16 2001-05-22 Micron Technology, Inc. Simplified etching technique for producing multiple undercut profiles
US6258286B1 (en) * 1999-03-02 2001-07-10 Eastman Kodak Company Making ink jet nozzle plates using bore liners
DE19958905C1 (de) * 1999-12-07 2001-04-12 Infineon Technologies Ag Verfahren zur Herstellung einer Struktur in einem Substrat mittels einer Hartmaske
US6653653B2 (en) * 2001-07-13 2003-11-25 Quantum Logic Devices, Inc. Single-electron transistors and fabrication methods in which a projecting feature defines spacing between electrodes
US20060009038A1 (en) 2004-07-12 2006-01-12 International Business Machines Corporation Processing for overcoming extreme topography
US20090242941A1 (en) 2008-03-25 2009-10-01 International Business Machines Corporation Structure and method for manufacturing device with a v-shape channel nmosfet

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02238674A (ja) * 1989-03-10 1990-09-20 Fujitsu Ltd 半導体装置及びその製造方法
FR2675634A1 (fr) * 1991-04-16 1992-10-23 France Telecom Dispositif optoelectronique a tres faible capacite parasite.
US5277755A (en) * 1991-12-09 1994-01-11 Xerox Corporation Fabrication of three dimensional silicon devices by single side, two-step etching process

Also Published As

Publication number Publication date
JP3575863B2 (ja) 2004-10-13
JPH07321420A (ja) 1995-12-08
EP0678946A1 (de) 1995-10-25
GB9406488D0 (en) 1994-05-25
DE69500375T2 (de) 1998-01-22
GB2288274A (en) 1995-10-11
US5571376A (en) 1996-11-05
EP0678946B1 (de) 1997-06-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee