DE69315092T2 - Quanteneffekt-Bauelement - Google Patents

Quanteneffekt-Bauelement

Info

Publication number
DE69315092T2
DE69315092T2 DE69315092T DE69315092T DE69315092T2 DE 69315092 T2 DE69315092 T2 DE 69315092T2 DE 69315092 T DE69315092 T DE 69315092T DE 69315092 T DE69315092 T DE 69315092T DE 69315092 T2 DE69315092 T2 DE 69315092T2
Authority
DE
Germany
Prior art keywords
effect device
quantum effect
quantum
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69315092T
Other languages
English (en)
Other versions
DE69315092D1 (de
Inventor
Kenji Okada
Kiyoshi Morimoto
Masaharu Udagawa
Koichiro Yuki
Masaaki Niwa
Yoshihiko Hirai
Juro Yasui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
New Energy and Industrial Technology Development Organization
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE69315092D1 publication Critical patent/DE69315092D1/de
Application granted granted Critical
Publication of DE69315092T2 publication Critical patent/DE69315092T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1037—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure and non-planar channel
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66931—BJT-like unipolar transistors, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunneling transistor [RTT], bulk barrier transistor [BBT], planar doped barrier transistor [PDBT], charge injection transistor [CHINT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes
    • H01L29/882—Resonant tunneling diodes, i.e. RTD, RTBD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/911—Differential oxidation and etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/962—Quantum dots and lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Lasers (AREA)
  • Bipolar Transistors (AREA)
  • Drying Of Semiconductors (AREA)
DE69315092T 1992-07-03 1993-07-02 Quanteneffekt-Bauelement Expired - Fee Related DE69315092T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17659792A JP3182892B2 (ja) 1992-07-03 1992-07-03 量子素子の製造方法

Publications (2)

Publication Number Publication Date
DE69315092D1 DE69315092D1 (de) 1997-12-11
DE69315092T2 true DE69315092T2 (de) 1998-03-19

Family

ID=16016356

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69315092T Expired - Fee Related DE69315092T2 (de) 1992-07-03 1993-07-02 Quanteneffekt-Bauelement
DE69304626T Expired - Lifetime DE69304626T2 (de) 1992-07-03 1993-07-02 Quanteneffektbauelement und dessen Herstellungsverfahren

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69304626T Expired - Lifetime DE69304626T2 (de) 1992-07-03 1993-07-02 Quanteneffektbauelement und dessen Herstellungsverfahren

Country Status (5)

Country Link
US (2) US5444267A (de)
EP (2) EP0709895B1 (de)
JP (1) JP3182892B2 (de)
KR (1) KR970005145B1 (de)
DE (2) DE69315092T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5962863A (en) * 1993-09-09 1999-10-05 The United States Of America As Represented By The Secretary Of The Navy Laterally disposed nanostructures of silicon on an insulating substrate
US5659179A (en) * 1995-03-07 1997-08-19 Motorola Ultra-small semiconductor devices having patterned edge planar surfaces
US5945687A (en) * 1995-11-30 1999-08-31 Matsushita Electric Industrial Co., Ltd. Quantization functional device, quantization functional apparatus utilizing the same, and method for producing the same
JPH09312378A (ja) * 1996-03-19 1997-12-02 Fujitsu Ltd 半導体装置及びその製造方法
US6091077A (en) 1996-10-22 2000-07-18 Matsushita Electric Industrial Co., Ltd. MIS SOI semiconductor device with RTD and/or HET
US5945686A (en) 1997-04-28 1999-08-31 Hitachi, Ltd. Tunneling electronic device
FR2791474B1 (fr) * 1999-03-26 2001-06-08 Centre Nat Rech Scient Detecteur infrarouge semi-conducteur et son procede de fabrication
GB0109782D0 (en) * 2001-04-20 2001-06-13 Btg Int Ltd Nanoelectronic devices and circuits
KR102608959B1 (ko) * 2017-09-04 2023-12-01 삼성전자주식회사 2차원 물질을 포함하는 소자

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4912531A (en) 1984-06-29 1990-03-27 Texas Instruments Incorporated Three-terminal quantum device
US5032877A (en) * 1984-07-02 1991-07-16 Texas Instruments Incorporated Quantum-coupled ROM
US4959696A (en) * 1985-08-23 1990-09-25 Texas Instruments Incorporated Three terminal tunneling device and method
US4751194A (en) * 1986-06-27 1988-06-14 American Telephone And Telegraph Company, At&T Bell Laboratories Structures including quantum well wires and boxes
US4780749A (en) * 1986-07-01 1988-10-25 Hughes Aircraft Company Double barrier tunnel diode having modified injection layer
JP2531655B2 (ja) * 1987-01-16 1996-09-04 株式会社日立製作所 半導体装置
JPS63316484A (ja) * 1987-06-19 1988-12-23 Fujitsu Ltd 量子効果半導体装置
US4926232A (en) * 1987-09-02 1990-05-15 Nec Corporation Resonant-tunneling bipolar transistor
NL8703119A (nl) * 1987-12-23 1989-07-17 Philips Nv Element voor toepassing in een elektrische schakeling.
DE3810768A1 (de) * 1988-03-30 1989-10-12 Licentia Gmbh Steuerbarer elektrischer leiter
EP0394757B1 (de) * 1989-04-27 1998-10-07 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Halbleiterstruktur mit einer 2D-Ladungsträgerschicht und Herstellungsverfahren
US5233205A (en) * 1989-09-25 1993-08-03 Hitachi, Ltd. Quantum wave circuit
JPH03196573A (ja) * 1989-12-26 1991-08-28 Hitachi Ltd 半導体装置

Also Published As

Publication number Publication date
KR970005145B1 (ko) 1997-04-12
US5562802A (en) 1996-10-08
EP0709895A3 (de) 1996-07-31
DE69315092D1 (de) 1997-12-11
JP3182892B2 (ja) 2001-07-03
US5444267A (en) 1995-08-22
DE69304626T2 (de) 1997-04-17
EP0577137B1 (de) 1996-09-11
JPH0621434A (ja) 1994-01-28
KR940006299A (ko) 1994-03-23
EP0709895B1 (de) 1997-11-05
EP0577137A1 (de) 1994-01-05
EP0709895A2 (de) 1996-05-01
DE69304626D1 (de) 1996-10-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEW ENERGY AND INDUSTRIAL TECHNOLOGY DEVELOPMENT O

8339 Ceased/non-payment of the annual fee