DE3851815D1 - Feldeffekttransistor und dessen Herstellungsmethode. - Google Patents

Feldeffekttransistor und dessen Herstellungsmethode.

Info

Publication number
DE3851815D1
DE3851815D1 DE3851815T DE3851815T DE3851815D1 DE 3851815 D1 DE3851815 D1 DE 3851815D1 DE 3851815 T DE3851815 T DE 3851815T DE 3851815 T DE3851815 T DE 3851815T DE 3851815 D1 DE3851815 D1 DE 3851815D1
Authority
DE
Germany
Prior art keywords
manufacturing
field effect
effect transistor
transistor
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3851815T
Other languages
English (en)
Other versions
DE3851815T2 (de
Inventor
Hiroyasu C O Mitsubishi Hagino
Hiroshi C O Mitsubis Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62241841A external-priority patent/JPH0734471B2/ja
Priority claimed from JP62241839A external-priority patent/JPH0734470B2/ja
Priority claimed from JP62241840A external-priority patent/JPS6482566A/ja
Priority claimed from JP62241838A external-priority patent/JPS6482564A/ja
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3851815D1 publication Critical patent/DE3851815D1/de
Application granted granted Critical
Publication of DE3851815T2 publication Critical patent/DE3851815T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE3851815T 1987-09-24 1988-07-20 Feldeffekttransistor und dessen Herstellungsmethode. Expired - Fee Related DE3851815T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP62241841A JPH0734471B2 (ja) 1987-09-24 1987-09-24 電界効果型半導体装置
JP62241839A JPH0734470B2 (ja) 1987-09-24 1987-09-24 電界効果型半導体装置
JP62241840A JPS6482566A (en) 1987-09-24 1987-09-24 Field-effect semiconductor device
JP62241838A JPS6482564A (en) 1987-09-24 1987-09-24 Field-effect semiconductor device

Publications (2)

Publication Number Publication Date
DE3851815D1 true DE3851815D1 (de) 1994-11-17
DE3851815T2 DE3851815T2 (de) 1995-05-24

Family

ID=27477858

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3851815T Expired - Fee Related DE3851815T2 (de) 1987-09-24 1988-07-20 Feldeffekttransistor und dessen Herstellungsmethode.

Country Status (2)

Country Link
EP (1) EP0308612B1 (de)
DE (1) DE3851815T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2573736B2 (ja) * 1990-09-18 1997-01-22 三菱電機株式会社 高耐圧低抵抗半導体装置及びその製造方法
JP2799252B2 (ja) * 1991-04-23 1998-09-17 三菱電機株式会社 Ｍｏｓ型半導体装置およびその製造方法
US5674766A (en) * 1994-12-30 1997-10-07 Siliconix Incorporated Method of making a trench MOSFET with multi-resistivity drain to provide low on-resistance by varying dopant concentration in epitaxial layer
JP2001352070A (ja) 2000-04-07 2001-12-21 Denso Corp 半導体装置およびその製造方法
EP1267415A3 (de) * 2001-06-11 2009-04-15 Kabushiki Kaisha Toshiba Leistungshalbleiterbauelement mit RESURF-Schicht
US7786533B2 (en) 2001-09-07 2010-08-31 Power Integrations, Inc. High-voltage vertical transistor with edge termination structure
US6635544B2 (en) 2001-09-07 2003-10-21 Power Intergrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
ITTO20060785A1 (it) * 2006-11-02 2008-05-03 St Microelectronics Srl Dispositivo mos resistente alla radiazione ionizzante
CN112599600A (zh) * 2020-12-03 2021-04-02 杰华特微电子（杭州）有限公司 垂直双扩散晶体管及其制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5658267A (en) * 1979-10-17 1981-05-21 Nippon Telegr & Teleph Corp <Ntt> Insulated gate type field-effect transistor
WO1982002981A1 (en) * 1981-02-23 1982-09-02 Inc Motorola Mos power transistor
JPS57153469A (en) * 1981-03-18 1982-09-22 Toshiba Corp Insulated gate type field effect transistor
JPS5984474A (ja) * 1982-11-05 1984-05-16 Nec Corp 電力用縦型電界効果トランジスタ
JPS59167066A (ja) * 1983-03-14 1984-09-20 Nissan Motor Co Ltd 縦形ｍｏｓｆｅｔ

Also Published As

Publication number Publication date
DE3851815T2 (de) 1995-05-24
EP0308612A2 (de) 1989-03-29
EP0308612A3 (en) 1990-07-18
EP0308612B1 (de) 1994-10-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee