DE69404800D1 - Festkörperbildaufnahmeanordnung und deren Herstellungsprozess - Google Patents

Festkörperbildaufnahmeanordnung und deren Herstellungsprozess

Info

Publication number
DE69404800D1
DE69404800D1 DE69404800T DE69404800T DE69404800D1 DE 69404800 D1 DE69404800 D1 DE 69404800D1 DE 69404800 T DE69404800 T DE 69404800T DE 69404800 T DE69404800 T DE 69404800T DE 69404800 D1 DE69404800 D1 DE 69404800D1
Authority
DE
Germany
Prior art keywords
imaging device
manufacturing process
solid state
state imaging
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69404800T
Other languages
English (en)
Other versions
DE69404800T2 (de
Inventor
Takahisa Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE69404800D1 publication Critical patent/DE69404800D1/de
Application granted granted Critical
Publication of DE69404800T2 publication Critical patent/DE69404800T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14654—Blooming suppression
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE69404800T 1993-09-28 1994-09-16 Festkörperbildaufnahmeanordnung und deren Herstellungsprozess Expired - Fee Related DE69404800T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5241183A JPH0799298A (ja) 1993-09-28 1993-09-28 固体撮像素子及びその製造方法

Publications (2)

Publication Number Publication Date
DE69404800D1 true DE69404800D1 (de) 1997-09-11
DE69404800T2 DE69404800T2 (de) 1998-03-12

Family

ID=17070468

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69404800T Expired - Fee Related DE69404800T2 (de) 1993-09-28 1994-09-16 Festkörperbildaufnahmeanordnung und deren Herstellungsprozess

Country Status (5)

Country Link
US (1) US5773859A (de)
EP (1) EP0650198B1 (de)
JP (1) JPH0799298A (de)
KR (1) KR950010105A (de)
DE (1) DE69404800T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2998646B2 (ja) * 1996-07-29 2000-01-11 日本電気株式会社 受光演算素子
JP3702611B2 (ja) * 1997-10-06 2005-10-05 ソニー株式会社 固体撮像素子及びその製造方法
KR100266656B1 (ko) * 1998-01-09 2000-10-02 김영환 반도체 소자 및 그 제조방법
JP3228331B2 (ja) * 1998-03-30 2001-11-12 日本電気株式会社 固体撮像デバイス
JP3372216B2 (ja) * 1998-11-11 2003-01-27 株式会社東芝 増幅型固体撮像装置
JP3601761B2 (ja) 1998-11-19 2004-12-15 松下電器産業株式会社 受光素子およびその製造方法
KR20000048110A (ko) * 1998-12-15 2000-07-25 카네코 히사시 고체촬상장치 및 그 제조방법
JP3225939B2 (ja) * 1998-12-18 2001-11-05 日本電気株式会社 固体撮像装置及びその製造方法
US6207984B1 (en) * 1998-12-23 2001-03-27 United Microelectronics Corp. CMOS sensor
US6302235B1 (en) * 2000-03-03 2001-10-16 Carson J. Matherne High-performance muffler
JP4419264B2 (ja) * 2000-03-31 2010-02-24 ソニー株式会社 固体撮像装置
JP2002158345A (ja) * 2000-11-22 2002-05-31 Shimadzu Corp 固体撮像素子
KR100872290B1 (ko) * 2002-09-25 2008-12-05 매그나칩 반도체 유한회사 씨모스 이미지 센서 및 그 제조 방법
US6812539B1 (en) * 2003-04-10 2004-11-02 Micron Technology, Inc. Imager light shield
KR100630679B1 (ko) * 2003-12-17 2006-10-02 삼성전자주식회사 포토 다이오드 및 이의 제조 방법
JP4715931B2 (ja) * 2009-02-10 2011-07-06 ソニー株式会社 電荷検出装置及び電荷検出方法、並びに固体撮像装置及びその駆動方法、並びに撮像装置
KR101411800B1 (ko) * 2009-12-26 2014-06-24 캐논 가부시끼가이샤 고체 촬상 장치 및 촬상 시스템
CN106461253B (zh) * 2014-04-22 2020-01-14 日立江森自控空调有限公司 空调机及其除霜运行方法
CN108598100B (zh) * 2018-06-15 2020-10-02 上海微阱电子科技有限公司 一种减小存储节点漏光的全局像元结构及制作方法
CN111508834A (zh) * 2019-12-30 2020-08-07 中国科学院微电子研究所 硅基光电探测器的制造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3167682D1 (en) * 1980-04-22 1985-01-24 Semiconductor Res Found Semiconductor image sensor
JPS56150871A (en) * 1980-04-24 1981-11-21 Toshiba Corp Semiconductor device
JPS5945781A (ja) * 1982-09-09 1984-03-14 Fuji Photo Film Co Ltd 半導体撮像装置
JPS59158551A (ja) * 1983-02-28 1984-09-08 Fuji Photo Film Co Ltd 半導体光検出装置及びその駆動方法
JPS615580A (ja) * 1984-06-19 1986-01-11 Toshiba Corp 半導体装置の製造方法
US4901129A (en) * 1987-04-10 1990-02-13 Texas Instruments Incorporated Bulk charge modulated transistor threshold image sensor elements and method of making
JPH0828473B2 (ja) * 1988-09-29 1996-03-21 三菱電機株式会社 半導体装置およびその製造方法
DE69127644T2 (de) * 1990-03-02 1998-02-05 Canon Kk Fotoelektrische Übertragungsvorrichtung
JPH0424964A (ja) * 1990-05-16 1992-01-28 Olympus Optical Co Ltd 固体撮像装置
JPH04312082A (ja) * 1991-04-10 1992-11-04 Sony Corp 固体撮像装置

Also Published As

Publication number Publication date
JPH0799298A (ja) 1995-04-11
EP0650198A1 (de) 1995-04-26
EP0650198B1 (de) 1997-08-06
DE69404800T2 (de) 1998-03-12
KR950010105A (ko) 1995-04-26
US5773859A (en) 1998-06-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee