DE69404800D1 - Festkörperbildaufnahmeanordnung und deren Herstellungsprozess - Google Patents
Festkörperbildaufnahmeanordnung und deren HerstellungsprozessInfo
- Publication number
- DE69404800D1 DE69404800D1 DE69404800T DE69404800T DE69404800D1 DE 69404800 D1 DE69404800 D1 DE 69404800D1 DE 69404800 T DE69404800 T DE 69404800T DE 69404800 T DE69404800 T DE 69404800T DE 69404800 D1 DE69404800 D1 DE 69404800D1
- Authority
- DE
- Germany
- Prior art keywords
- imaging device
- manufacturing process
- solid state
- state imaging
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000003384 imaging method Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000007787 solid Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14654—Blooming suppression
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5241183A JPH0799298A (ja) | 1993-09-28 | 1993-09-28 | 固体撮像素子及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69404800D1 true DE69404800D1 (de) | 1997-09-11 |
DE69404800T2 DE69404800T2 (de) | 1998-03-12 |
Family
ID=17070468
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69404800T Expired - Fee Related DE69404800T2 (de) | 1993-09-28 | 1994-09-16 | Festkörperbildaufnahmeanordnung und deren Herstellungsprozess |
Country Status (5)
Country | Link |
---|---|
US (1) | US5773859A (de) |
EP (1) | EP0650198B1 (de) |
JP (1) | JPH0799298A (de) |
KR (1) | KR950010105A (de) |
DE (1) | DE69404800T2 (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2998646B2 (ja) * | 1996-07-29 | 2000-01-11 | 日本電気株式会社 | 受光演算素子 |
JP3702611B2 (ja) * | 1997-10-06 | 2005-10-05 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
KR100266656B1 (ko) * | 1998-01-09 | 2000-10-02 | 김영환 | 반도체 소자 및 그 제조방법 |
JP3228331B2 (ja) * | 1998-03-30 | 2001-11-12 | 日本電気株式会社 | 固体撮像デバイス |
JP3372216B2 (ja) * | 1998-11-11 | 2003-01-27 | 株式会社東芝 | 増幅型固体撮像装置 |
JP3601761B2 (ja) | 1998-11-19 | 2004-12-15 | 松下電器産業株式会社 | 受光素子およびその製造方法 |
KR20000048110A (ko) * | 1998-12-15 | 2000-07-25 | 카네코 히사시 | 고체촬상장치 및 그 제조방법 |
JP3225939B2 (ja) * | 1998-12-18 | 2001-11-05 | 日本電気株式会社 | 固体撮像装置及びその製造方法 |
US6207984B1 (en) * | 1998-12-23 | 2001-03-27 | United Microelectronics Corp. | CMOS sensor |
US6302235B1 (en) * | 2000-03-03 | 2001-10-16 | Carson J. Matherne | High-performance muffler |
JP4419264B2 (ja) * | 2000-03-31 | 2010-02-24 | ソニー株式会社 | 固体撮像装置 |
JP2002158345A (ja) * | 2000-11-22 | 2002-05-31 | Shimadzu Corp | 固体撮像素子 |
KR100872290B1 (ko) * | 2002-09-25 | 2008-12-05 | 매그나칩 반도체 유한회사 | 씨모스 이미지 센서 및 그 제조 방법 |
US6812539B1 (en) * | 2003-04-10 | 2004-11-02 | Micron Technology, Inc. | Imager light shield |
KR100630679B1 (ko) * | 2003-12-17 | 2006-10-02 | 삼성전자주식회사 | 포토 다이오드 및 이의 제조 방법 |
JP4715931B2 (ja) * | 2009-02-10 | 2011-07-06 | ソニー株式会社 | 電荷検出装置及び電荷検出方法、並びに固体撮像装置及びその駆動方法、並びに撮像装置 |
EP3514831B1 (de) * | 2009-12-26 | 2021-10-13 | Canon Kabushiki Kaisha | Festkörper-bildaufnahmevorrichtung und bildaufnahmesystem |
JP6486335B2 (ja) * | 2014-04-22 | 2019-03-20 | 日立ジョンソンコントロールズ空調株式会社 | 空気調和機及びその除霜運転方法 |
CN108598100B (zh) * | 2018-06-15 | 2020-10-02 | 上海微阱电子科技有限公司 | 一种减小存储节点漏光的全局像元结构及制作方法 |
CN111508834A (zh) * | 2019-12-30 | 2020-08-07 | 中国科学院微电子研究所 | 硅基光电探测器的制造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3167682D1 (en) * | 1980-04-22 | 1985-01-24 | Semiconductor Res Found | Semiconductor image sensor |
JPS56150871A (en) * | 1980-04-24 | 1981-11-21 | Toshiba Corp | Semiconductor device |
JPS5945781A (ja) * | 1982-09-09 | 1984-03-14 | Fuji Photo Film Co Ltd | 半導体撮像装置 |
JPS59158551A (ja) * | 1983-02-28 | 1984-09-08 | Fuji Photo Film Co Ltd | 半導体光検出装置及びその駆動方法 |
JPS615580A (ja) * | 1984-06-19 | 1986-01-11 | Toshiba Corp | 半導体装置の製造方法 |
US4901129A (en) * | 1987-04-10 | 1990-02-13 | Texas Instruments Incorporated | Bulk charge modulated transistor threshold image sensor elements and method of making |
JPH0828473B2 (ja) * | 1988-09-29 | 1996-03-21 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
ATE158442T1 (de) * | 1990-03-02 | 1997-10-15 | Canon Kk | Fotoelektrische übertragungsvorrichtung |
JPH0424964A (ja) * | 1990-05-16 | 1992-01-28 | Olympus Optical Co Ltd | 固体撮像装置 |
JPH04312082A (ja) * | 1991-04-10 | 1992-11-04 | Sony Corp | 固体撮像装置 |
-
1993
- 1993-09-28 JP JP5241183A patent/JPH0799298A/ja not_active Withdrawn
-
1994
- 1994-09-16 EP EP94114634A patent/EP0650198B1/de not_active Expired - Lifetime
- 1994-09-16 DE DE69404800T patent/DE69404800T2/de not_active Expired - Fee Related
- 1994-09-26 KR KR1019940024110A patent/KR950010105A/ko not_active Application Discontinuation
-
1996
- 1996-11-22 US US08/755,244 patent/US5773859A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0799298A (ja) | 1995-04-11 |
US5773859A (en) | 1998-06-30 |
DE69404800T2 (de) | 1998-03-12 |
EP0650198B1 (de) | 1997-08-06 |
KR950010105A (ko) | 1995-04-26 |
EP0650198A1 (de) | 1995-04-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |