DE69940332D1 - Festkörper-Bildaufnahmevorrichtung und deren Herstellungsverfahren - Google Patents
Festkörper-Bildaufnahmevorrichtung und deren HerstellungsverfahrenInfo
- Publication number
- DE69940332D1 DE69940332D1 DE69940332T DE69940332T DE69940332D1 DE 69940332 D1 DE69940332 D1 DE 69940332D1 DE 69940332 T DE69940332 T DE 69940332T DE 69940332 T DE69940332 T DE 69940332T DE 69940332 D1 DE69940332 D1 DE 69940332D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- image pickup
- solid state
- pickup device
- state image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000007787 solid Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
- Facsimile Scanning Arrangements (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10070537A JPH11274454A (ja) | 1998-03-19 | 1998-03-19 | 固体撮像装置及びその形成方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69940332D1 true DE69940332D1 (de) | 2009-03-12 |
Family
ID=13434392
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69940332T Expired - Lifetime DE69940332D1 (de) | 1998-03-19 | 1999-03-18 | Festkörper-Bildaufnahmevorrichtung und deren Herstellungsverfahren |
Country Status (4)
Country | Link |
---|---|
US (7) | US6661459B1 (de) |
EP (2) | EP1993137A3 (de) |
JP (1) | JPH11274454A (de) |
DE (1) | DE69940332D1 (de) |
Families Citing this family (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4200545B2 (ja) * | 1998-06-08 | 2008-12-24 | ソニー株式会社 | 固体撮像素子およびその駆動方法、並びにカメラシステム |
KR100384836B1 (ko) * | 1999-06-28 | 2003-05-22 | 주식회사 하이닉스반도체 | 이미지센서 및 그 제조방법 |
US7324144B1 (en) * | 1999-10-05 | 2008-01-29 | Canon Kabushiki Kaisha | Solid image pickup device, image pickup system and method of driving solid image pickup device |
JP3467013B2 (ja) | 1999-12-06 | 2003-11-17 | キヤノン株式会社 | 固体撮像装置 |
JP2003524345A (ja) * | 2000-02-23 | 2003-08-12 | フォトビット コーポレーション | 分離記憶ノードを備えたフレームシャッターピクセル |
US6407440B1 (en) * | 2000-02-25 | 2002-06-18 | Micron Technology Inc. | Pixel cell with high storage capacitance for a CMOS imager |
KR100397665B1 (ko) * | 2001-03-29 | 2003-09-17 | (주) 픽셀플러스 | 감도를 향상시키는 씨모스 액티브 픽셀 |
JP4135360B2 (ja) * | 2001-12-25 | 2008-08-20 | ソニー株式会社 | 固体撮像装置 |
US7405757B2 (en) * | 2002-07-23 | 2008-07-29 | Fujitsu Limited | Image sensor and image sensor module |
JP3951879B2 (ja) * | 2002-10-04 | 2007-08-01 | ソニー株式会社 | 固体撮像素子及びその駆動方法 |
US7078745B2 (en) * | 2003-03-05 | 2006-07-18 | Micron Technology, Inc. | CMOS imager with enhanced transfer of charge and low voltage operation |
JP3977285B2 (ja) | 2003-05-15 | 2007-09-19 | キヤノン株式会社 | 固体撮像素子の製造方法 |
US7187018B2 (en) * | 2003-06-25 | 2007-03-06 | Micron Technology, Inc. | Reduced barrier photodiode/transfer gate device structure of high efficiency charge transfer and reduced lag and method of formation |
JP4161855B2 (ja) * | 2003-09-10 | 2008-10-08 | ソニー株式会社 | 固体撮像装置、駆動制御方法及び駆動制御装置 |
JP4268492B2 (ja) | 2003-10-02 | 2009-05-27 | 浜松ホトニクス株式会社 | 光検出装置 |
US7420233B2 (en) * | 2003-10-22 | 2008-09-02 | Micron Technology, Inc. | Photodiode for improved transfer gate leakage |
JP4194544B2 (ja) | 2003-12-05 | 2008-12-10 | キヤノン株式会社 | 固体撮像装置及び固体撮像装置の駆動方法 |
US7323731B2 (en) | 2003-12-12 | 2008-01-29 | Canon Kabushiki Kaisha | Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system |
JP5224633B2 (ja) | 2004-03-30 | 2013-07-03 | キヤノン株式会社 | 半導体装置の製造方法 |
JP4495512B2 (ja) * | 2004-05-11 | 2010-07-07 | パナソニック株式会社 | 固体撮像装置 |
US7667250B2 (en) * | 2004-07-16 | 2010-02-23 | Aptina Imaging Corporation | Vertical gate device for an image sensor and method of forming the same |
JP4744828B2 (ja) | 2004-08-26 | 2011-08-10 | 浜松ホトニクス株式会社 | 光検出装置 |
JP4646577B2 (ja) * | 2004-09-01 | 2011-03-09 | キヤノン株式会社 | 光電変換装置、その製造方法及び撮像システム |
JP5089017B2 (ja) * | 2004-09-01 | 2012-12-05 | キヤノン株式会社 | 固体撮像装置及び固体撮像システム |
JP2006210583A (ja) * | 2005-01-27 | 2006-08-10 | Matsushita Electric Ind Co Ltd | 固体撮像装置及びその製造方法 |
JP4508891B2 (ja) | 2005-01-28 | 2010-07-21 | キヤノン株式会社 | 光電変換装置、マルチチップ型イメージセンサ、密着型イメージセンサおよび画像読取装置 |
JP4878123B2 (ja) * | 2005-02-07 | 2012-02-15 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JP4224036B2 (ja) * | 2005-03-17 | 2009-02-12 | 富士通マイクロエレクトロニクス株式会社 | フォトダイオード領域を埋め込んだイメージセンサ及びその製造方法 |
JP4794877B2 (ja) * | 2005-03-18 | 2011-10-19 | キヤノン株式会社 | 固体撮像装置及びカメラ |
JP4839008B2 (ja) * | 2005-03-28 | 2011-12-14 | 富士フイルム株式会社 | 単板式カラー固体撮像素子 |
FR2884351A1 (fr) * | 2005-04-11 | 2006-10-13 | St Microelectronics Sa | Procede de fabrication d'un circuit integre comprenant une photodiode et circuit integre correspondant. |
JP4518996B2 (ja) * | 2005-04-22 | 2010-08-04 | シャープ株式会社 | 固体撮像装置の製造方法および電子情報装置 |
EP1722421A3 (de) * | 2005-05-13 | 2007-04-18 | Stmicroelectronics Sa | Integrierte massefreie Fotodiode |
EP1722422A3 (de) * | 2005-05-13 | 2007-04-18 | Stmicroelectronics Sa | Integrierter Schaltkreis mit einer massefreien Fotodiode und Herstellungsverfahren dafür |
FR2888404A1 (fr) * | 2005-07-05 | 2007-01-12 | St Microelectronics Sa | Procede de fabrication d'un circuit integre comprenant une photodiode et circuit integre correspondant |
KR100760142B1 (ko) * | 2005-07-27 | 2007-09-18 | 매그나칩 반도체 유한회사 | 고해상도 cmos 이미지 센서를 위한 스택형 픽셀 |
US8446508B2 (en) * | 2005-07-27 | 2013-05-21 | Sony Corporation | Solid state imaging device with optimized locations of internal electrical components |
KR100748342B1 (ko) * | 2005-09-14 | 2007-08-09 | 매그나칩 반도체 유한회사 | 씨모스 이미지 센서의 제조방법 |
JP4940607B2 (ja) * | 2005-09-22 | 2012-05-30 | ソニー株式会社 | 固体撮像装置およびその製造方法、並びにカメラ |
KR100871714B1 (ko) * | 2005-12-05 | 2008-12-05 | 한국전자통신연구원 | 트랜스퍼 트랜지스터 및 이를 구비한 저잡음 이미지 센서 |
KR100731065B1 (ko) * | 2005-12-28 | 2007-06-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 |
JP2007234874A (ja) * | 2006-03-01 | 2007-09-13 | Matsushita Electric Ind Co Ltd | 固体撮像装置の製造方法 |
JP5164370B2 (ja) * | 2006-12-13 | 2013-03-21 | キヤノン株式会社 | 撮像装置の製造方法 |
JP5063223B2 (ja) | 2007-07-02 | 2012-10-31 | キヤノン株式会社 | 光電変換装置及び撮像システム |
FR2930841B1 (fr) * | 2008-04-30 | 2010-08-13 | E2V Semiconductors | Capteur d'image a coins coupes avec un multiplexeur entre deux lignes adjacentes de pixels. |
JP5717329B2 (ja) * | 2009-10-09 | 2015-05-13 | キヤノン株式会社 | 固体撮像装置及びその製造方法 |
JP5539029B2 (ja) * | 2010-05-28 | 2014-07-02 | キヤノン株式会社 | 固体撮像装置の製造方法 |
JP5295188B2 (ja) * | 2010-08-27 | 2013-09-18 | キヤノン株式会社 | 光電変換装置、その製造方法及び撮像システム |
JP2012109540A (ja) | 2010-10-26 | 2012-06-07 | Canon Inc | 固体撮像装置の製造方法 |
JP2012124515A (ja) * | 2012-02-08 | 2012-06-28 | Canon Inc | 固体撮像装置およびその製造方法 |
JP5458135B2 (ja) * | 2012-03-28 | 2014-04-02 | シャープ株式会社 | 固体撮像素子の製造方法 |
EP2838255A4 (de) * | 2012-04-09 | 2015-12-09 | Olympus Corp | Festkörperbildaufnahmevorrichtung |
JP2014150230A (ja) * | 2013-02-04 | 2014-08-21 | Toshiba Corp | 固体撮像装置の製造方法および固体撮像装置 |
JP5624644B2 (ja) * | 2013-05-08 | 2014-11-12 | キヤノン株式会社 | 光電変換装置の製造方法 |
JP6595750B2 (ja) * | 2014-03-14 | 2019-10-23 | キヤノン株式会社 | 固体撮像装置及び撮像システム |
US9526468B2 (en) * | 2014-09-09 | 2016-12-27 | General Electric Company | Multiple frame acquisition for exposure control in X-ray medical imagers |
EP3232479B1 (de) * | 2016-04-15 | 2020-05-06 | STMicroelectronics (Tours) SAS | Diodenstruktur |
JP7121468B2 (ja) * | 2017-02-24 | 2022-08-18 | ブリルニクス シンガポール プライベート リミテッド | 固体撮像装置、固体撮像装置の製造方法、および電子機器 |
Family Cites Families (40)
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JPS59198756A (ja) * | 1983-04-27 | 1984-11-10 | Hitachi Ltd | 固体撮像素子およびその製造方法 |
US4862242A (en) | 1983-12-05 | 1989-08-29 | General Electric Company | Semiconductor wafer with an electrically-isolated semiconductor device |
EP0161983B1 (de) | 1984-05-03 | 1992-07-01 | Digital Equipment Corporation | Eingangs-Schutzanordnung für VLSI-Schaltungsanordnungen |
JP2723520B2 (ja) | 1987-07-08 | 1998-03-09 | 日本電気株式会社 | 固体撮像素子 |
JPH047396Y2 (de) | 1987-07-20 | 1992-02-27 | ||
US4984047A (en) * | 1988-03-21 | 1991-01-08 | Eastman Kodak Company | Solid-state image sensor |
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JP3125303B2 (ja) * | 1990-11-26 | 2001-01-15 | 日本電気株式会社 | 固体撮像素子 |
JPH04355964A (ja) * | 1990-12-21 | 1992-12-09 | Mitsubishi Electric Corp | 固体撮像装置及びその製造方法 |
US5238864A (en) * | 1990-12-21 | 1993-08-24 | Mitsubishi Denki Kabushiki Kaisha | Method of making solid-state imaging device |
JP2765635B2 (ja) | 1991-01-11 | 1998-06-18 | キヤノン株式会社 | 光電変換装置 |
JP2970158B2 (ja) * | 1991-12-20 | 1999-11-02 | 日本電気株式会社 | 固体撮像装置の製造方法 |
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KR960002100B1 (ko) * | 1993-03-27 | 1996-02-10 | 삼성전자주식회사 | 전하결합소자형 이미지센서 |
JP2621767B2 (ja) * | 1993-07-30 | 1997-06-18 | 日本電気株式会社 | 固体撮像素子 |
JP3467858B2 (ja) * | 1993-11-02 | 2003-11-17 | ソニー株式会社 | 光電変換素子 |
JPH07161958A (ja) * | 1993-12-09 | 1995-06-23 | Nec Corp | 固体撮像装置 |
KR0136934B1 (ko) * | 1994-02-23 | 1998-04-24 | 문정환 | 선형 고체영상소자 |
US5625210A (en) * | 1995-04-13 | 1997-04-29 | Eastman Kodak Company | Active pixel sensor integrated with a pinned photodiode |
JP2848268B2 (ja) * | 1995-04-20 | 1999-01-20 | 日本電気株式会社 | 固体撮像装置およびその製造方法 |
JP3316106B2 (ja) * | 1995-06-08 | 2002-08-19 | 株式会社東芝 | 固体撮像装置およびその製造方法 |
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US5614744A (en) * | 1995-08-04 | 1997-03-25 | National Semiconductor Corporation | CMOS-based, low leakage active pixel array with anti-blooming isolation |
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EP0809299B1 (de) | 1996-05-22 | 2008-04-23 | Eastman Kodak Company | Aktiver Pixelsensor mit Durchbruch-Rücksetzstruktur und Unterdrückung des Übersprechsignales |
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KR100192954B1 (ko) * | 1996-07-18 | 1999-06-15 | 김광호 | 수직형 전달게이트를 가지는 전하결합형 고체촬상소자 및 그 제조방법 |
JPH1098176A (ja) * | 1996-09-19 | 1998-04-14 | Toshiba Corp | 固体撮像装置 |
US5892253A (en) | 1997-03-26 | 1999-04-06 | Foveonics, Inc. | Active pixel sensor cell with balanced blue response and reduced noise |
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JPH11126893A (ja) * | 1997-10-23 | 1999-05-11 | Nikon Corp | 固体撮像素子とその製造方法 |
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JP2006073885A (ja) | 2004-09-03 | 2006-03-16 | Canon Inc | 固体撮像装置、その製造方法、およびデジタルカメラ |
JP5110820B2 (ja) | 2006-08-02 | 2012-12-26 | キヤノン株式会社 | 光電変換装置、光電変換装置の製造方法及び撮像システム |
-
1998
- 1998-03-19 JP JP10070537A patent/JPH11274454A/ja active Pending
-
1999
- 1999-03-18 US US09/271,887 patent/US6661459B1/en not_active Expired - Lifetime
- 1999-03-18 DE DE69940332T patent/DE69940332D1/de not_active Expired - Lifetime
- 1999-03-18 EP EP08162529A patent/EP1993137A3/de not_active Withdrawn
- 1999-03-18 EP EP99302095.7A patent/EP0948056B9/de not_active Expired - Lifetime
-
2003
- 2003-07-21 US US10/622,540 patent/US7274394B2/en not_active Expired - Fee Related
-
2007
- 2007-07-05 US US11/773,731 patent/US7705373B2/en not_active Expired - Fee Related
-
2010
- 2010-03-03 US US12/716,488 patent/US8138528B2/en not_active Expired - Fee Related
-
2012
- 2012-02-02 US US13/364,601 patent/US8395193B2/en not_active Expired - Fee Related
-
2013
- 2013-01-30 US US13/753,682 patent/US20130187199A1/en not_active Abandoned
- 2013-12-23 US US14/138,277 patent/US9257479B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20120146100A1 (en) | 2012-06-14 |
US20040017496A1 (en) | 2004-01-29 |
US20070257281A1 (en) | 2007-11-08 |
US9257479B2 (en) | 2016-02-09 |
EP0948056A2 (de) | 1999-10-06 |
JPH11274454A (ja) | 1999-10-08 |
US7705373B2 (en) | 2010-04-27 |
US8138528B2 (en) | 2012-03-20 |
EP1993137A2 (de) | 2008-11-19 |
US20130187199A1 (en) | 2013-07-25 |
US20140106496A1 (en) | 2014-04-17 |
EP0948056A3 (de) | 2000-02-23 |
EP0948056B1 (de) | 2009-01-21 |
EP1993137A3 (de) | 2010-06-16 |
US7274394B2 (en) | 2007-09-25 |
EP0948056B9 (de) | 2014-02-26 |
US8395193B2 (en) | 2013-03-12 |
US6661459B1 (en) | 2003-12-09 |
US20100155787A1 (en) | 2010-06-24 |
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