DE69940332D1 - Festkörper-Bildaufnahmevorrichtung und deren Herstellungsverfahren - Google Patents

Festkörper-Bildaufnahmevorrichtung und deren Herstellungsverfahren

Info

Publication number
DE69940332D1
DE69940332D1 DE69940332T DE69940332T DE69940332D1 DE 69940332 D1 DE69940332 D1 DE 69940332D1 DE 69940332 T DE69940332 T DE 69940332T DE 69940332 T DE69940332 T DE 69940332T DE 69940332 D1 DE69940332 D1 DE 69940332D1
Authority
DE
Germany
Prior art keywords
manufacturing
image pickup
solid state
pickup device
state image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69940332T
Other languages
English (en)
Inventor
Toru Koizumi
Isamu Ueno
Katsuhito Sakurai
Shigetoshi Sugawa
Tetsunobu Kochi
Hiroki Hiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69940332D1 publication Critical patent/DE69940332D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
  • Facsimile Scanning Arrangements (AREA)
  • Light Receiving Elements (AREA)
DE69940332T 1998-03-19 1999-03-18 Festkörper-Bildaufnahmevorrichtung und deren Herstellungsverfahren Expired - Lifetime DE69940332D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10070537A JPH11274454A (ja) 1998-03-19 1998-03-19 固体撮像装置及びその形成方法

Publications (1)

Publication Number Publication Date
DE69940332D1 true DE69940332D1 (de) 2009-03-12

Family

ID=13434392

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69940332T Expired - Lifetime DE69940332D1 (de) 1998-03-19 1999-03-18 Festkörper-Bildaufnahmevorrichtung und deren Herstellungsverfahren

Country Status (4)

Country Link
US (7) US6661459B1 (de)
EP (2) EP1993137A3 (de)
JP (1) JPH11274454A (de)
DE (1) DE69940332D1 (de)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4200545B2 (ja) * 1998-06-08 2008-12-24 ソニー株式会社 固体撮像素子およびその駆動方法、並びにカメラシステム
KR100384836B1 (ko) * 1999-06-28 2003-05-22 주식회사 하이닉스반도체 이미지센서 및 그 제조방법
US7324144B1 (en) * 1999-10-05 2008-01-29 Canon Kabushiki Kaisha Solid image pickup device, image pickup system and method of driving solid image pickup device
JP3467013B2 (ja) 1999-12-06 2003-11-17 キヤノン株式会社 固体撮像装置
JP2003524345A (ja) * 2000-02-23 2003-08-12 フォトビット コーポレーション 分離記憶ノードを備えたフレームシャッターピクセル
US6407440B1 (en) * 2000-02-25 2002-06-18 Micron Technology Inc. Pixel cell with high storage capacitance for a CMOS imager
KR100397665B1 (ko) * 2001-03-29 2003-09-17 (주) 픽셀플러스 감도를 향상시키는 씨모스 액티브 픽셀
JP4135360B2 (ja) * 2001-12-25 2008-08-20 ソニー株式会社 固体撮像装置
US7405757B2 (en) * 2002-07-23 2008-07-29 Fujitsu Limited Image sensor and image sensor module
JP3951879B2 (ja) * 2002-10-04 2007-08-01 ソニー株式会社 固体撮像素子及びその駆動方法
US7078745B2 (en) * 2003-03-05 2006-07-18 Micron Technology, Inc. CMOS imager with enhanced transfer of charge and low voltage operation
JP3977285B2 (ja) 2003-05-15 2007-09-19 キヤノン株式会社 固体撮像素子の製造方法
US7187018B2 (en) * 2003-06-25 2007-03-06 Micron Technology, Inc. Reduced barrier photodiode/transfer gate device structure of high efficiency charge transfer and reduced lag and method of formation
JP4161855B2 (ja) * 2003-09-10 2008-10-08 ソニー株式会社 固体撮像装置、駆動制御方法及び駆動制御装置
JP4268492B2 (ja) 2003-10-02 2009-05-27 浜松ホトニクス株式会社 光検出装置
US7420233B2 (en) * 2003-10-22 2008-09-02 Micron Technology, Inc. Photodiode for improved transfer gate leakage
JP4194544B2 (ja) 2003-12-05 2008-12-10 キヤノン株式会社 固体撮像装置及び固体撮像装置の駆動方法
US7323731B2 (en) 2003-12-12 2008-01-29 Canon Kabushiki Kaisha Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system
JP5224633B2 (ja) 2004-03-30 2013-07-03 キヤノン株式会社 半導体装置の製造方法
JP4495512B2 (ja) * 2004-05-11 2010-07-07 パナソニック株式会社 固体撮像装置
US7667250B2 (en) * 2004-07-16 2010-02-23 Aptina Imaging Corporation Vertical gate device for an image sensor and method of forming the same
JP4744828B2 (ja) 2004-08-26 2011-08-10 浜松ホトニクス株式会社 光検出装置
JP4646577B2 (ja) * 2004-09-01 2011-03-09 キヤノン株式会社 光電変換装置、その製造方法及び撮像システム
JP5089017B2 (ja) * 2004-09-01 2012-12-05 キヤノン株式会社 固体撮像装置及び固体撮像システム
JP2006210583A (ja) * 2005-01-27 2006-08-10 Matsushita Electric Ind Co Ltd 固体撮像装置及びその製造方法
JP4508891B2 (ja) 2005-01-28 2010-07-21 キヤノン株式会社 光電変換装置、マルチチップ型イメージセンサ、密着型イメージセンサおよび画像読取装置
JP4878123B2 (ja) * 2005-02-07 2012-02-15 浜松ホトニクス株式会社 固体撮像装置
JP4224036B2 (ja) * 2005-03-17 2009-02-12 富士通マイクロエレクトロニクス株式会社 フォトダイオード領域を埋め込んだイメージセンサ及びその製造方法
JP4794877B2 (ja) * 2005-03-18 2011-10-19 キヤノン株式会社 固体撮像装置及びカメラ
JP4839008B2 (ja) * 2005-03-28 2011-12-14 富士フイルム株式会社 単板式カラー固体撮像素子
FR2884351A1 (fr) * 2005-04-11 2006-10-13 St Microelectronics Sa Procede de fabrication d'un circuit integre comprenant une photodiode et circuit integre correspondant.
JP4518996B2 (ja) * 2005-04-22 2010-08-04 シャープ株式会社 固体撮像装置の製造方法および電子情報装置
EP1722421A3 (de) * 2005-05-13 2007-04-18 Stmicroelectronics Sa Integrierte massefreie Fotodiode
EP1722422A3 (de) * 2005-05-13 2007-04-18 Stmicroelectronics Sa Integrierter Schaltkreis mit einer massefreien Fotodiode und Herstellungsverfahren dafür
FR2888404A1 (fr) * 2005-07-05 2007-01-12 St Microelectronics Sa Procede de fabrication d'un circuit integre comprenant une photodiode et circuit integre correspondant
KR100760142B1 (ko) * 2005-07-27 2007-09-18 매그나칩 반도체 유한회사 고해상도 ｃｍｏｓ 이미지 센서를 위한 스택형 픽셀
US8446508B2 (en) * 2005-07-27 2013-05-21 Sony Corporation Solid state imaging device with optimized locations of internal electrical components
KR100748342B1 (ko) * 2005-09-14 2007-08-09 매그나칩 반도체 유한회사 씨모스 이미지 센서의 제조방법
JP4940607B2 (ja) * 2005-09-22 2012-05-30 ソニー株式会社 固体撮像装置およびその製造方法、並びにカメラ
KR100871714B1 (ko) * 2005-12-05 2008-12-05 한국전자통신연구원 트랜스퍼 트랜지스터 및 이를 구비한 저잡음 이미지 센서
KR100731065B1 (ko) * 2005-12-28 2007-06-22 동부일렉트로닉스 주식회사 씨모스 이미지 센서
JP2007234874A (ja) * 2006-03-01 2007-09-13 Matsushita Electric Ind Co Ltd 固体撮像装置の製造方法
JP5164370B2 (ja) * 2006-12-13 2013-03-21 キヤノン株式会社 撮像装置の製造方法
JP5063223B2 (ja) 2007-07-02 2012-10-31 キヤノン株式会社 光電変換装置及び撮像システム
FR2930841B1 (fr) * 2008-04-30 2010-08-13 E2V Semiconductors Capteur d'image a coins coupes avec un multiplexeur entre deux lignes adjacentes de pixels.
JP5717329B2 (ja) * 2009-10-09 2015-05-13 キヤノン株式会社 固体撮像装置及びその製造方法
JP5539029B2 (ja) * 2010-05-28 2014-07-02 キヤノン株式会社 固体撮像装置の製造方法
JP5295188B2 (ja) * 2010-08-27 2013-09-18 キヤノン株式会社 光電変換装置、その製造方法及び撮像システム
JP2012109540A (ja) 2010-10-26 2012-06-07 Canon Inc 固体撮像装置の製造方法
JP2012124515A (ja) * 2012-02-08 2012-06-28 Canon Inc 固体撮像装置およびその製造方法
JP5458135B2 (ja) * 2012-03-28 2014-04-02 シャープ株式会社 固体撮像素子の製造方法
EP2838255A4 (de) * 2012-04-09 2015-12-09 Olympus Corp Festkörperbildaufnahmevorrichtung
JP2014150230A (ja) * 2013-02-04 2014-08-21 Toshiba Corp 固体撮像装置の製造方法および固体撮像装置
JP5624644B2 (ja) * 2013-05-08 2014-11-12 キヤノン株式会社 光電変換装置の製造方法
JP6595750B2 (ja) * 2014-03-14 2019-10-23 キヤノン株式会社 固体撮像装置及び撮像システム
US9526468B2 (en) * 2014-09-09 2016-12-27 General Electric Company Multiple frame acquisition for exposure control in X-ray medical imagers
EP3232479B1 (de) * 2016-04-15 2020-05-06 STMicroelectronics (Tours) SAS Diodenstruktur
JP7121468B2 (ja) * 2017-02-24 2022-08-18 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の製造方法、および電子機器

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59198756A (ja) * 1983-04-27 1984-11-10 Hitachi Ltd 固体撮像素子およびその製造方法
US4862242A (en) 1983-12-05 1989-08-29 General Electric Company Semiconductor wafer with an electrically-isolated semiconductor device
EP0161983B1 (de) 1984-05-03 1992-07-01 Digital Equipment Corporation Eingangs-Schutzanordnung für VLSI-Schaltungsanordnungen
JP2723520B2 (ja) 1987-07-08 1998-03-09 日本電気株式会社 固体撮像素子
JPH047396Y2 (de) 1987-07-20 1992-02-27
US4984047A (en) * 1988-03-21 1991-01-08 Eastman Kodak Company Solid-state image sensor
US4974043A (en) * 1989-10-12 1990-11-27 Eastman Kodak Company Solid-state image sensor
JP3125303B2 (ja) * 1990-11-26 2001-01-15 日本電気株式会社 固体撮像素子
JPH04355964A (ja) * 1990-12-21 1992-12-09 Mitsubishi Electric Corp 固体撮像装置及びその製造方法
US5238864A (en) * 1990-12-21 1993-08-24 Mitsubishi Denki Kabushiki Kaisha Method of making solid-state imaging device
JP2765635B2 (ja) 1991-01-11 1998-06-18 キヤノン株式会社 光電変換装置
JP2970158B2 (ja) * 1991-12-20 1999-11-02 日本電気株式会社 固体撮像装置の製造方法
US5378641A (en) * 1993-02-22 1995-01-03 Micron Semiconductor, Inc. Electrically conductive substrate interconnect continuity region and method of forming same with an angled implant
KR960002100B1 (ko) * 1993-03-27 1996-02-10 삼성전자주식회사 전하결합소자형 이미지센서
JP2621767B2 (ja) * 1993-07-30 1997-06-18 日本電気株式会社 固体撮像素子
JP3467858B2 (ja) * 1993-11-02 2003-11-17 ソニー株式会社 光電変換素子
JPH07161958A (ja) * 1993-12-09 1995-06-23 Nec Corp 固体撮像装置
KR0136934B1 (ko) * 1994-02-23 1998-04-24 문정환 선형 고체영상소자
US5625210A (en) * 1995-04-13 1997-04-29 Eastman Kodak Company Active pixel sensor integrated with a pinned photodiode
JP2848268B2 (ja) * 1995-04-20 1999-01-20 日本電気株式会社 固体撮像装置およびその製造方法
JP3316106B2 (ja) * 1995-06-08 2002-08-19 株式会社東芝 固体撮像装置およびその製造方法
US5739562A (en) * 1995-08-01 1998-04-14 Lucent Technologies Inc. Combined photogate and photodiode active pixel image sensor
US5614744A (en) * 1995-08-04 1997-03-25 National Semiconductor Corporation CMOS-based, low leakage active pixel array with anti-blooming isolation
US5881184A (en) * 1996-05-22 1999-03-09 Eastman Kodak Company Active pixel sensor with single pixel reset
EP0809299B1 (de) 1996-05-22 2008-04-23 Eastman Kodak Company Aktiver Pixelsensor mit Durchbruch-Rücksetzstruktur und Unterdrückung des Übersprechsignales
US5872371A (en) 1997-02-27 1999-02-16 Eastman Kodak Company Active pixel sensor with punch-through reset and cross-talk suppression
KR100192954B1 (ko) * 1996-07-18 1999-06-15 김광호 수직형 전달게이트를 가지는 전하결합형 고체촬상소자 및 그 제조방법
JPH1098176A (ja) * 1996-09-19 1998-04-14 Toshiba Corp 固体撮像装置
US5892253A (en) 1997-03-26 1999-04-06 Foveonics, Inc. Active pixel sensor cell with balanced blue response and reduced noise
US6107655A (en) * 1997-08-15 2000-08-22 Eastman Kodak Company Active pixel image sensor with shared amplifier read-out
JPH11126893A (ja) * 1997-10-23 1999-05-11 Nikon Corp 固体撮像素子とその製造方法
US6023081A (en) * 1997-11-14 2000-02-08 Motorola, Inc. Semiconductor image sensor
US5877521A (en) * 1998-01-08 1999-03-02 International Business Machines Corporation SOI active pixel cell design with grounded body contact
US5880495A (en) 1998-01-08 1999-03-09 Omnivision Technologies, Inc. Active pixel with a pinned photodiode
US6331873B1 (en) * 1998-12-03 2001-12-18 Massachusetts Institute Of Technology High-precision blooming control structure formation for an image sensor
JP2003031787A (ja) 2001-07-17 2003-01-31 Canon Inc 固体撮像素子及びその駆動方法
JP3536832B2 (ja) * 2001-09-17 2004-06-14 ソニー株式会社 固体撮像装置およびその製造方法
US6528376B1 (en) * 2001-11-30 2003-03-04 Taiwan Semiconductor Manufacturing Co., Ltd. Sacrificial spacer layer method for fabricating field effect transistor (FET) device
JP2006073885A (ja) 2004-09-03 2006-03-16 Canon Inc 固体撮像装置、その製造方法、およびデジタルカメラ
JP5110820B2 (ja) 2006-08-02 2012-12-26 キヤノン株式会社 光電変換装置、光電変換装置の製造方法及び撮像システム

Also Published As

Publication number Publication date
US20120146100A1 (en) 2012-06-14
US20040017496A1 (en) 2004-01-29
US20070257281A1 (en) 2007-11-08
US9257479B2 (en) 2016-02-09
EP0948056A2 (de) 1999-10-06
JPH11274454A (ja) 1999-10-08
US7705373B2 (en) 2010-04-27
US8138528B2 (en) 2012-03-20
EP1993137A2 (de) 2008-11-19
US20130187199A1 (en) 2013-07-25
US20140106496A1 (en) 2014-04-17
EP0948056A3 (de) 2000-02-23
EP0948056B1 (de) 2009-01-21
EP1993137A3 (de) 2010-06-16
US7274394B2 (en) 2007-09-25
EP0948056B9 (de) 2014-02-26
US8395193B2 (en) 2013-03-12
US6661459B1 (en) 2003-12-09
US20100155787A1 (en) 2010-06-24

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