DE60127883D1 - Festkörperbildaufnahmevorrichtung und Ansteuermethode dafür - Google Patents

Festkörperbildaufnahmevorrichtung und Ansteuermethode dafür

Info

Publication number
DE60127883D1
DE60127883D1 DE60127883T DE60127883T DE60127883D1 DE 60127883 D1 DE60127883 D1 DE 60127883D1 DE 60127883 T DE60127883 T DE 60127883T DE 60127883 T DE60127883 T DE 60127883T DE 60127883 D1 DE60127883 D1 DE 60127883D1
Authority
DE
Germany
Prior art keywords
image pickup
solid state
pickup device
driving method
state image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60127883T
Other languages
English (en)
Other versions
DE60127883T2 (de
Inventor
Takashi Miida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Innotech Corp
Original Assignee
Innotech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000001972A external-priority patent/JP3396880B2/ja
Priority claimed from JP2000245937A external-priority patent/JP2002064749A/ja
Application filed by Innotech Corp filed Critical Innotech Corp
Application granted granted Critical
Publication of DE60127883D1 publication Critical patent/DE60127883D1/de
Publication of DE60127883T2 publication Critical patent/DE60127883T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14609Pixel-elements with integrated switching, control, storage or amplification elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1462Coatings
    • H01L27/14623Optical shielding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50Control of the SSIS exposure
    • H04N25/51Control of the gain
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N3/00Scanning details of television systems; Combination thereof with generation of supply voltages
    • H04N3/10Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
    • H04N3/14Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
    • H04N3/15Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
    • H04N3/155Control of the image-sensor operation, e.g. image processing within the image-sensor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE60127883T 2000-01-07 2001-01-04 Festkörperbildaufnahmevorrichtung und Ansteuermethode dafür Expired - Lifetime DE60127883T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000001972 2000-01-07
JP2000001972A JP3396880B2 (ja) 2000-01-07 2000-01-07 固体撮像装置及びその駆動方法
JP2000245937 2000-08-14
JP2000245937A JP2002064749A (ja) 2000-08-14 2000-08-14 固体撮像装置の駆動方法

Publications (2)

Publication Number Publication Date
DE60127883D1 true DE60127883D1 (de) 2007-05-31
DE60127883T2 DE60127883T2 (de) 2008-01-17

Family

ID=26583271

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60127883T Expired - Lifetime DE60127883T2 (de) 2000-01-07 2001-01-04 Festkörperbildaufnahmevorrichtung und Ansteuermethode dafür

Country Status (7)

Country Link
US (2) US6476371B2 (de)
EP (1) EP1115245B1 (de)
KR (1) KR100377598B1 (de)
CN (1) CN1258227C (de)
DE (1) DE60127883T2 (de)
HK (1) HK1038832A1 (de)
TW (1) TW483127B (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW503620B (en) * 2000-02-04 2002-09-21 Sanyo Electric Co Drive apparatus for CCD image sensor
JP2002043557A (ja) * 2000-07-21 2002-02-08 Mitsubishi Electric Corp 固体撮像素子を有する半導体装置およびその製造方法
US6541794B1 (en) * 2000-08-31 2003-04-01 Motorola, Inc. Imaging device and method
US6937278B2 (en) * 2001-04-02 2005-08-30 Micron Technology, Inc. Row driver circuit for a sensor including a shared row-reset bus and a charge pump boosting circuit
JP4049603B2 (ja) * 2002-03-29 2008-02-20 三洋電機株式会社 撮像装置
JP3840203B2 (ja) * 2002-06-27 2006-11-01 キヤノン株式会社 固体撮像装置及び固体撮像装置を用いたカメラシステム
JP2004228871A (ja) * 2003-01-22 2004-08-12 Seiko Epson Corp 画像処理装置、画像処理方法及び固体撮像装置
JP3891126B2 (ja) * 2003-02-21 2007-03-14 セイコーエプソン株式会社 固体撮像装置
JP4890737B2 (ja) * 2003-12-01 2012-03-07 日本電気株式会社 電流駆動型デバイスの駆動回路、電流駆動型装置及びその駆動方法
JP4004484B2 (ja) * 2004-03-31 2007-11-07 シャープ株式会社 固体撮像素子の製造方法
KR100621561B1 (ko) * 2004-11-05 2006-09-19 삼성전자주식회사 Cmos 이미지 센서 및 그 구동 방법
KR100621558B1 (ko) * 2004-11-08 2006-09-19 삼성전자주식회사 Cmos 이미지 센서 및 그 구동 방법
US7675015B2 (en) 2004-11-08 2010-03-09 Samsung Electronics Co., Ltd. CMOS image sensor with boosted voltage signal and related method of operation
JP4686201B2 (ja) * 2005-01-27 2011-05-25 パナソニック株式会社 固体撮像装置及びその製造方法
JP2006300615A (ja) * 2005-04-18 2006-11-02 Umc Japan 外観検査装置及び外観検査方法
US7755684B2 (en) * 2006-08-29 2010-07-13 Micron Technology, Inc. Row driver circuitry for imaging devices and related method of operation
US7989853B2 (en) * 2008-08-07 2011-08-02 Texas Instruments Incorporated Integration of high voltage JFET in linear bipolar CMOS process
CN105107682A (zh) * 2015-09-02 2015-12-02 镇江泛沃汽车零部件有限公司 一种方向盘助力转向系统中侦测齿轮的涂油装置
CN108920845B (zh) * 2018-07-06 2023-02-21 福州大学 一种实现氧化锌线状晶体管电导可调的方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59198756A (ja) * 1983-04-27 1984-11-10 Hitachi Ltd 固体撮像素子およびその製造方法
JP2786665B2 (ja) * 1989-04-14 1998-08-13 株式会社東芝 電荷転送装置
JP3271086B2 (ja) * 1992-09-29 2002-04-02 ソニー株式会社 固体撮像素子の駆動回路
JPH0786549A (ja) * 1993-06-29 1995-03-31 Canon Inc 光電変換装置及び該装置を搭載した情報処理装置
JP2827993B2 (ja) * 1995-12-22 1998-11-25 ソニー株式会社 固体撮像素子
EP0809299B1 (de) * 1996-05-22 2008-04-23 Eastman Kodak Company Aktiver Pixelsensor mit Durchbruch-Rücksetzstruktur und Unterdrückung des Übersprechsignales
JP3369911B2 (ja) * 1997-06-30 2003-01-20 株式会社東芝 固体撮像装置
JP2935492B2 (ja) 1997-10-30 1999-08-16 イノビジョン株式会社 固体撮像素子及び固体撮像素子による光信号検出方法
US6051857A (en) * 1998-01-07 2000-04-18 Innovision, Inc. Solid-state imaging device and method of detecting optical signals using the same
JPH11306784A (ja) * 1998-04-24 1999-11-05 Canon Inc 昇圧回路
KR100291179B1 (ko) * 1998-06-29 2001-07-12 박종섭 자기정렬된실리사이드층을갖는씨모스이미지센서및그제조방법
JP3895930B2 (ja) * 2001-01-09 2007-03-22 三洋電機株式会社 固体撮像装置

Also Published As

Publication number Publication date
US20010017381A1 (en) 2001-08-30
DE60127883T2 (de) 2008-01-17
CN1258227C (zh) 2006-05-31
US20030010897A1 (en) 2003-01-16
EP1115245B1 (de) 2007-04-18
CN1304178A (zh) 2001-07-18
EP1115245A2 (de) 2001-07-11
KR100377598B1 (ko) 2003-03-29
HK1038832A1 (zh) 2002-03-28
US6476371B2 (en) 2002-11-05
TW483127B (en) 2002-04-11
KR20010070423A (ko) 2001-07-25
EP1115245A3 (de) 2002-11-27
US6768093B2 (en) 2004-07-27

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