DE60032433D1 - Festkörperbildaufnahmevorrichtung und Ansteuerung dazu - Google Patents

Festkörperbildaufnahmevorrichtung und Ansteuerung dazu

Info

Publication number
DE60032433D1
DE60032433D1 DE60032433T DE60032433T DE60032433D1 DE 60032433 D1 DE60032433 D1 DE 60032433D1 DE 60032433 T DE60032433 T DE 60032433T DE 60032433 T DE60032433 T DE 60032433T DE 60032433 D1 DE60032433 D1 DE 60032433D1
Authority
DE
Germany
Prior art keywords
control
image pickup
solid state
pickup device
state image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60032433T
Other languages
English (en)
Other versions
DE60032433T2 (de
Inventor
Nobuo Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Publication of DE60032433D1 publication Critical patent/DE60032433D1/de
Application granted granted Critical
Publication of DE60032433T2 publication Critical patent/DE60032433T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816—Output structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE60032433T 1999-10-07 2000-10-09 Festkörperbildaufnahmevorrichtung und Ansteuerung dazu Expired - Lifetime DE60032433T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP28733499 1999-10-07
JP28733499A JP2001111026A (ja) 1999-10-07 1999-10-07 固体撮像装置

Publications (2)

Publication Number Publication Date
DE60032433D1 true DE60032433D1 (de) 2007-02-01
DE60032433T2 DE60032433T2 (de) 2007-04-12

Family

ID=17716031

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60032433T Expired - Lifetime DE60032433T2 (de) 1999-10-07 2000-10-09 Festkörperbildaufnahmevorrichtung und Ansteuerung dazu

Country Status (5)

Country Link
US (1) US6541805B1 (de)
EP (1) EP1091411B1 (de)
JP (1) JP2001111026A (de)
KR (1) KR100549641B1 (de)
DE (1) DE60032433T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4738667B2 (ja) * 2001-08-10 2011-08-03 キヤノン株式会社 撮像装置
US7138696B2 (en) * 2001-10-19 2006-11-21 Canon Kabushiki Kaisha Image pickup apparatus, radiation image pickup apparatus and radiation image pickup system
JP3693026B2 (ja) * 2002-03-01 2005-09-07 ソニー株式会社 固体撮像装置
JP2003319408A (ja) * 2002-04-26 2003-11-07 Seiko Epson Corp カラーエリアセンサ及び撮像回路
JP4428235B2 (ja) * 2002-06-12 2010-03-10 ソニー株式会社 固体撮像素子、固体撮像素子の駆動方法、撮像方法および撮像装置
US7432971B2 (en) * 2002-06-21 2008-10-07 Shimadzu Corporation In-situ storage image sensor and in-situ storage image pickup apparatus
US7022579B2 (en) * 2003-03-14 2006-04-04 Micron Technology, Inc. Method for filling via with metal
JP2004303982A (ja) * 2003-03-31 2004-10-28 Matsushita Electric Ind Co Ltd 固体撮像素子
KR100601425B1 (ko) * 2004-06-23 2006-07-14 주식회사 대우일렉트로닉스 전자 레인지용 조명장치
JP4524609B2 (ja) 2004-10-29 2010-08-18 ソニー株式会社 固体撮像素子、固体撮像素子の駆動方法および撮像装置
JP4566848B2 (ja) * 2005-07-11 2010-10-20 富士フイルム株式会社 撮影装置および撮影装置の駆動方法
US8446508B2 (en) * 2005-07-27 2013-05-21 Sony Corporation Solid state imaging device with optimized locations of internal electrical components
TW200746409A (en) * 2005-12-01 2007-12-16 Matsushita Electric Ind Co Ltd Solid-state image pickup device and camera including the same
JP2008131169A (ja) * 2006-11-17 2008-06-05 Shimadzu Corp 撮像素子およびそれを用いた撮像装置
JP2009213106A (ja) * 2008-02-06 2009-09-17 Sony Corp 固体撮像装置
WO2011004562A1 (ja) 2009-07-10 2011-01-13 パナソニック株式会社 固体撮像素子およびその駆動方法
JPWO2011086622A1 (ja) * 2010-01-12 2013-05-16 パナソニック株式会社 固体撮像装置、その駆動方法及びカメラ
JP5643555B2 (ja) * 2010-07-07 2014-12-17 キヤノン株式会社 固体撮像装置及び撮像システム

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2504334B1 (fr) * 1981-04-16 1985-10-18 Thomson Csf Dispositif d'analyse d'image en lignes successives, utilisant le transfert de charges electriques, composant une memoire de ligne, et camera de television comportant un tel dispositif
JPS60229479A (ja) * 1984-04-26 1985-11-14 Toshiba Corp 固体エリアセンサ
JPH0644823B2 (ja) * 1986-08-22 1994-06-08 日本ビクター株式会社 固体撮像装置
US4972254A (en) * 1987-02-24 1990-11-20 Kabushiki Kaisha Toshiba Solid state image sensors for reproducing high definition images
JP2735223B2 (ja) * 1988-06-08 1998-04-02 日本放送協会 固体撮像装置
JP2807386B2 (ja) * 1993-02-15 1998-10-08 株式会社東芝 固体撮像装置及び固体撮像装置の駆動方法
US6259478B1 (en) * 1994-04-01 2001-07-10 Toshikazu Hori Full frame electronic shutter camera
KR0165375B1 (ko) * 1995-03-31 1999-03-20 김광호 Ccd형고체촬영소자
JP2865019B2 (ja) * 1995-05-31 1999-03-08 日本電気株式会社 電荷転送固体撮像装置の駆動方法
JP3519202B2 (ja) * 1996-03-11 2004-04-12 松下電器産業株式会社 シェーディング補正方法およびシェーディング補正機能付き順次走査方式対応撮像装置
JP3830590B2 (ja) * 1996-10-30 2006-10-04 株式会社東芝 固体撮像装置
JP3704406B2 (ja) * 1996-10-30 2005-10-12 株式会社東芝 固体撮像装置
JPH11205532A (ja) * 1998-01-14 1999-07-30 Toshiba Corp 固体撮像装置
JP4497688B2 (ja) * 1999-09-27 2010-07-07 富士フイルム株式会社 固体撮像装置

Also Published As

Publication number Publication date
EP1091411B1 (de) 2006-12-20
EP1091411A2 (de) 2001-04-11
KR100549641B1 (ko) 2006-02-06
EP1091411A3 (de) 2004-01-28
DE60032433T2 (de) 2007-04-12
JP2001111026A (ja) 2001-04-20
US6541805B1 (en) 2003-04-01
KR20010050904A (ko) 2001-06-25

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: FUJIFILM CORP., TOKIO/TOKYO, JP

8364 No opposition during term of opposition