JP4686201B2 - 固体撮像装置及びその製造方法 - Google Patents
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Description
以下、本発明の第1の実施形態に係る固体撮像装置及びその製造方法について、図面を参照して説明する。
以下、本発明の第2の実施形態に係る固体撮像装置及びその製造方法について、図面を参照して説明する。
以下、本発明の第3の実施形態に係る固体撮像装置及びその製造方法について、図面を参照して説明する。
101 シリコン基板
102 MOSトランジスタ
103 フォトダイオード(PD)
104 ソース領域及びドレイン領域
105 ゲート絶縁膜
106 ゲート電極
110 層間絶縁膜
111、111a 応力緩和膜
112 一層目下側層間絶縁膜
113 一層目上側層間絶縁膜
114 二層目層間絶縁膜
115 三層目下側層間絶縁膜
116 三層目上側層間絶縁膜
117 最上部層間絶縁膜
121 PD部拡散防止層
122 一層目拡散防止層
123 二層目拡散防止層
124、224 三層目拡散防止層
131 一層目コンタクト
132 一層目埋め込み配線
133 二層目コンタクト
134 二層目埋め込み配線
135、235 撮像領域三層目コンタクト
136、236 撮像領域三層目配線
137、237 制御領域三層目コンタクト
138、238 制御領域三層目埋め込み配線
141 パッシベーション膜
142 カラーフィルタ
143 オンチップレンズ
221 共通拡散防止層
A 撮像領域
B 制御回路領域
Claims (19)
- 基板と、
前記基板上に形成され、光電変換部を有する光電変換セルがアレイ状に配置された撮像領域と、
前記基板上に形成され、前記撮像領域の制御及び前記撮像領域からの信号の出力を行なう制御回路領域と、
前記基板上に形成され且つ銅を含む材料よりなる銅含有配線層とを備え、
前記銅の拡散を防止するための拡散防止層として、前記光電変換部上に第1の拡散防止層が形成されていると共に、前記銅含有配線層上に第2の拡散防止層が形成されており、
前記撮像領域に形成されている配線層のうちの最上層配線層は、エッチングによってパターニングされており、
前記制御回路領域に形成されている配線層のうちの最上層配線層は、埋め込み配線であり、
前記撮像領域の前記最上層配線層は、アルミニウムを含むと共に、
前記制御回路領域の前記最上層配線層は、銅を含むことを特徴とする固体撮像装置。 - 請求項1において、
前記第1の拡散防止層と、最下層の前記銅含有配線層上に形成された前記第2の拡散防止層とは、連続して一体的に形成されていることを特徴とする固体撮像装置。 - 請求項1又は2において、
前記光電変換部と、前記第1の拡散防止層との間に、応力緩和膜を有していることを特徴とする固体撮像装置。 - 請求項1〜3のいずれか一つにおいて、
前記第1の拡散防止層及び前記第2の拡散防止層は、窒化珪素及び炭化珪素のうち少なくとも一方を含むことを特徴とする固体撮像装置。 - 請求項1〜4のいずれか一つにおいて、
前記銅含有配線層を含む複数の配線層を備え、前記複数の配線層の間には、少なくとも絶縁膜が形成されていることを特徴とする固体撮像装置。 - 請求項1〜5のいずれか一つにおいて、
前記銅含有配線層とは別に、入射光を遮る遮光膜として機能すると共に前記光電変換部に光を入射させるための開口を有する遮光配線層を備え、
前記遮光配線層は、エッチングによってパターニングされていることを特徴とする固体撮像装置。 - 請求項6において、
前記遮光配線層は、アルミニウムを含むことを特徴とする固体撮像装置。 - 請求項1〜7のいずれか一つにおいて、
前記撮像領域の前記最上層配線層は、前記制御回路領域の前記最上層配線層よりも下に位置することを特徴とする固体撮像装置。 - 請求項1〜8のいずれか一つに記載の固体撮像装置を備えたカメラ。
- 基板上に、光電変換部を有する光電変換セルがアレイ状に配置された撮像領域と、前記撮像領域の制御及び前記撮像領域からの信号の出力を行なう制御回路領域とを形成する第1の工程と、
前記第1の工程の後に、前記基板上に銅を含む銅含有配線層を形成する第2の工程と、
前記第1の工程の後に、前記銅の拡散を防止する拡散防止層として、前記光電変換部上に第1の拡散防止層を形成すると共に、前記銅含有配線層上に第2の拡散防止層を形成する第3の工程とを備え、
さらに、前記撮像領域における最上層配線層を、エッチングによってパターニングする工程と、
前記制御回路領域における最上層配線層を、埋め込み配線として形成する工程とを備えることを特徴とする固体撮像装置の製造方法。 - 請求項10において、
前記第3の工程において、前記第1の拡散防止層と、最下層の前記銅含有配線層上に形成された前記第2の拡散防止層とを、連続して一体的に形成することを特徴とする固体撮像装置の製造方法。 - 請求項10又は11において、
前記第3の工程において前記第1の拡散防止層を形成するよりも前に、前記光電変換部上に、応力緩和膜を形成する工程を更に備えることを特徴とする固体撮像装置の製造方法。 - 請求項10〜12のいずれか一つにおいて、
前記第3の工程において、窒化珪素及び炭化珪素のうち少なくとも一方を含む膜として前記第1の拡散防止層及び前記第2の拡散防止層を形成することを特徴とする固体撮像装置の製造方法。 - 請求項10〜13のいずれか一つにおいて、
前記第2の工程を含む工程により、複数の配線層を形成すると共に、
前記複数の配線層の間に少なくとも絶縁膜を形成する工程を備えていることを特徴とする固体撮像装置の製造方法。 - 請求項10〜14のいずれか一つにおいて、
前記第1の工程よりも後に、入射光を遮る遮光膜として機能すると共に前記光電変換部に光を入射させるための開口を有する遮光配線層を形成する第4の工程を更に備え、
前記遮光配線層を形成する工程は、エッチングによってパターニングを行なう工程を含むことを特徴とする固体撮像装置の製造方法。 - 請求項15において、
前記第4の工程において、アルミニウムを含む遮光配線層を形成することを特徴とする固体撮像装置の製造方法。 - 請求項16において、
前記撮像領域における前記最上層配線層を、アルミニウムを含む材料により形成すると共に、
前記制御回路領域における前記最上層配線層を、銅を含む材料により形成することを特徴とする固体撮像装置の製造方法。 - 請求項10〜17のいずれか一つにおいて、
前記撮像領域における前記最上層配線層を形成する工程は、前記制御回路領域における前記最上層配線層を形成する工程よりも先に行なうことを特徴とする固体撮像装置の製造方法。 - 請求項10〜18のいずれか一つにおいて、
前記第2の工程よりも前に、
少なくとも水素を含む雰囲気において、最高到達温度が400℃以上で且つ480℃以下である熱処理を行なう工程を備えることを特長とする固体撮像装置の製造方法。
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JP2005019618A JP4686201B2 (ja) | 2005-01-27 | 2005-01-27 | 固体撮像装置及びその製造方法 |
US11/335,533 US7436012B2 (en) | 2005-01-27 | 2006-01-20 | Solid state imaging apparatus and method for fabricating the same |
CN200610006244.6A CN100593241C (zh) | 2005-01-27 | 2006-01-24 | 固体摄像装置及其制造方法 |
US12/233,068 US8115241B2 (en) | 2005-01-27 | 2008-09-18 | Solid state imaging apparatus and method for fabricating the same |
US12/233,080 US7800144B2 (en) | 2005-01-27 | 2008-09-18 | Solid state imaging apparatus and method for fabricating the same |
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JP4686201B2 (ja) * | 2005-01-27 | 2011-05-25 | パナソニック株式会社 | 固体撮像装置及びその製造方法 |
KR100798276B1 (ko) * | 2006-08-23 | 2008-01-24 | 동부일렉트로닉스 주식회사 | 이미지 센서 및 그 제조방법 |
JP4315457B2 (ja) * | 2006-08-31 | 2009-08-19 | キヤノン株式会社 | 光電変換装置及び撮像システム |
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US20090014759A1 (en) | 2009-01-15 |
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