JP2010206173A - 光電変換装置およびカメラ - Google Patents
光電変換装置およびカメラ Download PDFInfo
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- JP2010206173A JP2010206173A JP2009293212A JP2009293212A JP2010206173A JP 2010206173 A JP2010206173 A JP 2010206173A JP 2009293212 A JP2009293212 A JP 2009293212A JP 2009293212 A JP2009293212 A JP 2009293212A JP 2010206173 A JP2010206173 A JP 2010206173A
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 28
- 238000009792 diffusion process Methods 0.000 claims abstract description 55
- 239000012535 impurity Substances 0.000 claims abstract description 37
- 238000002955 isolation Methods 0.000 claims abstract description 24
- 230000003321 amplification Effects 0.000 claims description 37
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 37
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 28
- 229910052698 phosphorus Inorganic materials 0.000 claims description 28
- 239000011574 phosphorus Substances 0.000 claims description 28
- 238000012546 transfer Methods 0.000 claims description 23
- 229910052785 arsenic Inorganic materials 0.000 claims description 19
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 19
- 238000012545 processing Methods 0.000 claims description 16
- 239000010410 layer Substances 0.000 description 40
- 238000003384 imaging method Methods 0.000 description 39
- 239000004065 semiconductor Substances 0.000 description 28
- 239000000758 substrate Substances 0.000 description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 238000005036 potential barrier Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000006870 function Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 230000005465 channeling Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 238000013144 data compression Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/144—Devices controlled by radiation
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- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
Abstract
【解決手段】光電変換装置は、p型領域PRと、p型領域PRの下に形成されたn型の埋め込み層10と、素子分離領域9と、素子分離領域9の少なくとも下側部分を覆うチャネルストップ領域8とを含む。p型領域PRおよび埋め込み層10によってフォトダイオードPDが構成されている。チャネルストップ領域8の主要不純物の拡散係数は、埋め込み層10の主要不純物の拡散係数より小さい。
【選択図】図4
Description
素子分離領域と、前記素子分離領域の少なくとも下側部分を覆うチャネルストップ領域とを含み、前記p型領域および前記埋め込み層によってフォトダイオードが構成され、前記チャネルストップ領域の主要不純物の拡散係数が前記埋め込み層の主要不純物の拡散係数より小さい。
Claims (8)
- p型領域と、
前記p型領域の下に形成されたn型の埋め込み層と、
素子分離領域と、
前記素子分離領域の少なくとも下側部分を覆うチャネルストップ領域とを含み、
前記p型領域および前記埋め込み層によってフォトダイオードが構成され、前記チャネルストップ領域の主要不純物の拡散係数が前記埋め込み層の主要不純物の拡散係数より小さいことを特徴とする光電変換装置。 - 前記チャネルストップ領域の主要不純物が砒素であり、前記埋め込み層の主要不純物が燐であることを特徴とする請求項1に記載の光電変換装置。
- 浮遊拡散部と、
前記p型領域に蓄積された正孔を前記浮遊拡散部に転送するための転送トランジスタと、
前記浮遊拡散部に現れる信号を増幅する増幅トランジスタと、
前記浮遊拡散部の電位をリセットするリセットトランジスタとを更に備え、
前記増幅トランジスタのチャネル幅が前記リセットトランジスタのチャネル幅よりも大きいことを特徴とする請求項1又は2に記載の光電変換装置。 - 浮遊拡散部と、
前記p型領域に蓄積された正孔を前記浮遊拡散部に転送するための転送トランジスタと、
前記浮遊拡散部の電位をリセットするリセットトランジスタと、
前記浮遊拡散部に現れる信号を増幅する増幅トランジスタとを更に備え、
前記増幅トランジスタは埋め込みチャネル構造を有し、前記リセットトランジスタは表面チャネル構造を有することを特徴とする請求項1乃至3のいずれか1項に記載の光電変換装置。 - 前記素子分離領域は、前記フォトダイオード、前記転送トランジスタ、前記増幅トランジスタおよび前記リセットトランジスタが形成されるべき活性領域を分離するように配置されていることを特徴とする請求項3又は4に記載の光電変換装置。
- n型の表面領域を更に備え、
前記p型領域は、前記表面領域の下に形成され、
前記表面領域の主要不純物が前記チャネルストップ領域の主要不純物と同一であることを特徴とする請求項1乃至5のいずれか1項に記載の光電変換装置。 - 裏面照射型の光電変換装置として構成されていることを特徴とする請求項1乃至6のいずれか1項に記載の光電変換装置。
- 請求項1乃至7のいずれか1項に記載の光電変換装置と、
前記光電変換装置によって得られた信号を処理する信号処理部と、
を備えることを特徴とするカメラ。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009293212A JP2010206173A (ja) | 2009-02-06 | 2009-12-24 | 光電変換装置およびカメラ |
PCT/JP2010/050999 WO2010090105A1 (en) | 2009-02-06 | 2010-01-20 | Photoelectric conversion device and camera |
EP10703363A EP2394302A1 (en) | 2009-02-06 | 2010-01-20 | Photoelectric conversion device and camera |
KR1020117020357A KR20110107407A (ko) | 2009-02-06 | 2010-01-20 | 광전변환장치 및 카메라 |
CN201080006229.6A CN102301474B (zh) | 2009-02-06 | 2010-01-20 | 光电转换装置和照相机 |
US13/139,542 US8670059B2 (en) | 2009-02-06 | 2010-01-20 | Photoelectric conversion device having an n-type buried layer, and camera |
US14/137,100 US8953076B2 (en) | 2009-02-06 | 2013-12-20 | Photoelectric conversion device and camera having a photodiode cathode formed by an n-type buried layer |
Applications Claiming Priority (2)
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JP2009026698 | 2009-02-06 | ||
JP2009293212A JP2010206173A (ja) | 2009-02-06 | 2009-12-24 | 光電変換装置およびカメラ |
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JP2010206173A true JP2010206173A (ja) | 2010-09-16 |
JP2010206173A5 JP2010206173A5 (ja) | 2013-02-14 |
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JP2009293212A Pending JP2010206173A (ja) | 2009-02-06 | 2009-12-24 | 光電変換装置およびカメラ |
Country Status (6)
Country | Link |
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US (2) | US8670059B2 (ja) |
EP (1) | EP2394302A1 (ja) |
JP (1) | JP2010206173A (ja) |
KR (1) | KR20110107407A (ja) |
CN (1) | CN102301474B (ja) |
WO (1) | WO2010090105A1 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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US20090250778A1 (en) * | 2008-04-04 | 2009-10-08 | Canon Kabushiki Kaisha | Photoelectric conversion device, imaging system, photoelectric conversion device designing method, and photoelectric conversion device manufacturing method |
JP2015138851A (ja) * | 2014-01-21 | 2015-07-30 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
CN105185699A (zh) * | 2015-09-25 | 2015-12-23 | 上海华力微电子有限公司 | 通过c离子注入降低cmos图像传感器白像素的方法 |
JP2016092137A (ja) * | 2014-10-31 | 2016-05-23 | キヤノン株式会社 | 撮像装置 |
JP2018186267A (ja) * | 2017-04-26 | 2018-11-22 | パナソニックIpマネジメント株式会社 | 光検出装置 |
JP2019050384A (ja) * | 2018-10-18 | 2019-03-28 | キヤノン株式会社 | 光電変換装置、および、撮像システム |
JP2019146130A (ja) * | 2018-02-23 | 2019-08-29 | 株式会社リコー | 光電変換素子、画像読取装置、および画像形成装置 |
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JP2010206172A (ja) | 2009-02-06 | 2010-09-16 | Canon Inc | 撮像装置およびカメラ |
JP2010206174A (ja) | 2009-02-06 | 2010-09-16 | Canon Inc | 光電変換装置およびその製造方法ならびにカメラ |
JP2012142560A (ja) * | 2010-12-15 | 2012-07-26 | Canon Inc | 固体撮像装置およびその製造方法ならびにカメラ |
US20130256509A1 (en) * | 2012-03-27 | 2013-10-03 | Omnivision Technologies, Inc. | Dual source follower pixel cell architecture |
US9007504B2 (en) * | 2012-04-06 | 2015-04-14 | Omnivision Technologies, Inc. | Method, apparatus and system for reducing pixel cell noise |
JP5985269B2 (ja) * | 2012-06-26 | 2016-09-06 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
WO2014002330A1 (ja) * | 2012-06-27 | 2014-01-03 | パナソニック株式会社 | 固体撮像装置 |
JP6278608B2 (ja) | 2013-04-08 | 2018-02-14 | キヤノン株式会社 | 半導体装置およびその製造方法 |
JP6119432B2 (ja) * | 2013-05-31 | 2017-04-26 | ソニー株式会社 | 固体撮像素子、電子機器、および製造方法 |
JP6121837B2 (ja) * | 2013-08-02 | 2017-04-26 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子 |
JP2016018919A (ja) * | 2014-07-09 | 2016-02-01 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
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Also Published As
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EP2394302A1 (en) | 2011-12-14 |
WO2010090105A1 (en) | 2010-08-12 |
US8670059B2 (en) | 2014-03-11 |
CN102301474A (zh) | 2011-12-28 |
US20140168492A1 (en) | 2014-06-19 |
US8953076B2 (en) | 2015-02-10 |
CN102301474B (zh) | 2014-12-03 |
KR20110107407A (ko) | 2011-09-30 |
US20110249163A1 (en) | 2011-10-13 |
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