AU2001244586A1 - Semiconductor energy detector - Google Patents

Semiconductor energy detector

Info

Publication number
AU2001244586A1
AU2001244586A1 AU2001244586A AU4458601A AU2001244586A1 AU 2001244586 A1 AU2001244586 A1 AU 2001244586A1 AU 2001244586 A AU2001244586 A AU 2001244586A AU 4458601 A AU4458601 A AU 4458601A AU 2001244586 A1 AU2001244586 A1 AU 2001244586A1
Authority
AU
Australia
Prior art keywords
energy detector
semiconductor energy
semiconductor
detector
energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001244586A
Inventor
Hiroshi Akahori
Masaharu Muramatsu
Yasuhito Yoneta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000102620A external-priority patent/JP4571267B2/en
Priority claimed from JP2000102625A external-priority patent/JP4522531B2/en
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of AU2001244586A1 publication Critical patent/AU2001244586A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14663—Indirect radiation imagers, e.g. using luminescent members

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
AU2001244586A 2000-04-04 2001-03-28 Semiconductor energy detector Abandoned AU2001244586A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2000-102625 2000-04-04
JP2000102620A JP4571267B2 (en) 2000-04-04 2000-04-04 Radiation detector
JP2000-102620 2000-04-04
JP2000102625A JP4522531B2 (en) 2000-04-04 2000-04-04 Semiconductor energy detector
PCT/JP2001/002568 WO2001075977A1 (en) 2000-04-04 2001-03-28 Semiconductor energy detector

Publications (1)

Publication Number Publication Date
AU2001244586A1 true AU2001244586A1 (en) 2001-10-15

Family

ID=26589457

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001244586A Abandoned AU2001244586A1 (en) 2000-04-04 2001-03-28 Semiconductor energy detector

Country Status (5)

Country Link
US (1) US7148551B2 (en)
EP (1) EP1280207B1 (en)
CN (1) CN1324714C (en)
AU (1) AU2001244586A1 (en)
WO (1) WO2001075977A1 (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2392307B8 (en) 2002-07-26 2006-09-20 Detection Technology Oy Semiconductor structure for imaging detectors
AU2003254876A1 (en) * 2002-08-09 2004-03-11 Hamamatsu Photonics K.K. Photodiode array, production method therefor, and radiation detector
JP4391079B2 (en) 2002-11-28 2009-12-24 浜松ホトニクス株式会社 Solid-state imaging device and radiation imaging device
JP4220818B2 (en) 2003-03-27 2009-02-04 浜松ホトニクス株式会社 Photodiode array, method of manufacturing the same, and radiation detector
JP4220819B2 (en) 2003-03-27 2009-02-04 浜松ホトニクス株式会社 Radiation detector
JP4220817B2 (en) * 2003-03-27 2009-02-04 浜松ホトニクス株式会社 Photodiode array, method of manufacturing the same, and radiation detector
US7170143B2 (en) * 2003-10-20 2007-01-30 Hamamatsu Photonics K.K. Semiconductor photo-detection device and radiation apparatus
JP5085122B2 (en) 2006-12-21 2012-11-28 浜松ホトニクス株式会社 Semiconductor light detection element and radiation detection apparatus
CN102623473B (en) 2007-07-03 2015-09-09 浜松光子学株式会社 Back surface incident type distance measuring sensor and range unit
JP2010206173A (en) * 2009-02-06 2010-09-16 Canon Inc Photoelectric conversion device and camera
JP2010206174A (en) 2009-02-06 2010-09-16 Canon Inc Photoelectric converter, method of manufacturing the same, and camera
JP2010206172A (en) 2009-02-06 2010-09-16 Canon Inc Image sensing device, and camera
CN102569310B (en) * 2010-12-31 2015-05-13 重庆鹰谷光电有限公司 Making method of silicon quadrant photoelectric detector without blind region and photoelectric crosstalk
EP2495764B1 (en) * 2011-03-04 2017-10-04 Société Française de Détecteurs Infrarouges - SOFRADIR Detection matrix with improved polarisation conditions and manufacturing method
DE102011017789B3 (en) * 2011-04-29 2012-04-05 Siemens Aktiengesellschaft Phosphor sheet comprises a substrate and an overlying additional layer, on which a phosphor layer is applied, where the additional layer is girdded such that it forms first and second nubs separated by grooves
JP5731344B2 (en) * 2011-09-28 2015-06-10 浜松ホトニクス株式会社 Radiation detector
FR2994616B1 (en) * 2012-08-14 2014-09-12 Commissariat Energie Atomique SEMICONDUCTOR COMPONENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR COMPONENT
FR3021807B1 (en) 2014-05-27 2017-09-29 Commissariat A L Energie Atomique Et Aux Energies Alternatives IMPROVED FTM MESA PHOTODIOD MATRIX MATRIX
KR20160040035A (en) * 2014-10-02 2016-04-12 삼성전기주식회사 Chip component and manufacturing method thereof
CN106847958B (en) * 2016-12-07 2018-09-11 同方威视技术股份有限公司 Photodiode device and photodiode detector

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55124259A (en) * 1979-03-19 1980-09-25 Semiconductor Res Found Semiconductor device
JPS56165473A (en) * 1980-05-24 1981-12-19 Semiconductor Res Found Semiconductor pickup device
JPH0828493B2 (en) * 1989-11-06 1996-03-21 富士通株式会社 Light detector
CA2070708C (en) * 1991-08-08 1997-04-29 Ichiro Kasai Visible and infrared indium antimonide (insb) photodetector with non-flashing light receiving surface
JPH05150049A (en) 1991-11-30 1993-06-18 Shimadzu Corp Radiation detector
SE470116B (en) * 1992-04-03 1993-11-08 Asea Brown Boveri Detector circuit with a semiconductor diode working as a detector and an amplifier circuit integrated with the diode
JPH06140613A (en) * 1992-10-27 1994-05-20 Hamamatsu Photonics Kk Semiconductor light detector
US5633526A (en) * 1992-11-01 1997-05-27 Rohm Co., Ltd. Photodiode array and method for manufacturing the same
JPH09331051A (en) * 1995-06-16 1997-12-22 S I I R D Center:Kk Photoelectric conversion semiconductor device
US5777352A (en) * 1996-09-19 1998-07-07 Eastman Kodak Company Photodetector structure
JP3070489B2 (en) * 1996-10-09 2000-07-31 トヨタ自動車株式会社 Concentrating solar cell element
FR2758630B1 (en) * 1997-01-21 1999-04-09 Thomson Tubes Electroniques PROCESS FOR SEALING A SOLID STATE RADIATION DETECTOR AND DETECTOR OBTAINED THEREBY
JPH10209417A (en) * 1997-01-23 1998-08-07 S I I R D Center:Kk Solid-state radiation detecting device
JP3419312B2 (en) * 1998-07-21 2003-06-23 住友電気工業株式会社 Light receiving element and light receiving element module
CA2241779C (en) * 1998-06-26 2010-02-09 Ftni Inc. Indirect x-ray image detector for radiology
JP2000312011A (en) * 1999-04-26 2000-11-07 Rohm Co Ltd Rectifying semiconductor device

Also Published As

Publication number Publication date
CN1324714C (en) 2007-07-04
CN1422441A (en) 2003-06-04
US20030034496A1 (en) 2003-02-20
EP1280207A1 (en) 2003-01-29
EP1280207B1 (en) 2017-03-15
US7148551B2 (en) 2006-12-12
WO2001075977A1 (en) 2001-10-11
EP1280207A4 (en) 2007-12-19

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