HK1038832A1 - 固態成像設備及其激勵方法 - Google Patents

固態成像設備及其激勵方法

Info

Publication number
HK1038832A1
HK1038832A1 HK02100284.3A HK02100284A HK1038832A1 HK 1038832 A1 HK1038832 A1 HK 1038832A1 HK 02100284 A HK02100284 A HK 02100284A HK 1038832 A1 HK1038832 A1 HK 1038832A1
Authority
HK
Hong Kong
Prior art keywords
imaging device
solid state
state imaging
driving method
driving
Prior art date
Application number
HK02100284.3A
Other languages
English (en)
Inventor
三井田高
Original Assignee
伊諾太科株式會社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000001972A external-priority patent/JP3396880B2/ja
Priority claimed from JP2000245937A external-priority patent/JP2002064749A/ja
Application filed by 伊諾太科株式會社 filed Critical 伊諾太科株式會社
Publication of HK1038832A1 publication Critical patent/HK1038832A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/51—Control of the gain
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
    • H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
    • H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
    • H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
    • H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
HK02100284.3A 2000-01-07 2002-01-15 固態成像設備及其激勵方法 HK1038832A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000001972A JP3396880B2 (ja) 2000-01-07 2000-01-07 固体撮像装置及びその駆動方法
JP2000245937A JP2002064749A (ja) 2000-08-14 2000-08-14 固体撮像装置の駆動方法

Publications (1)

Publication Number Publication Date
HK1038832A1 true HK1038832A1 (zh) 2002-03-28

Family

ID=26583271

Family Applications (1)

Application Number Title Priority Date Filing Date
HK02100284.3A HK1038832A1 (zh) 2000-01-07 2002-01-15 固態成像設備及其激勵方法

Country Status (7)

Country Link
US (2) US6476371B2 (zh)
EP (1) EP1115245B1 (zh)
KR (1) KR100377598B1 (zh)
CN (1) CN1258227C (zh)
DE (1) DE60127883T2 (zh)
HK (1) HK1038832A1 (zh)
TW (1) TW483127B (zh)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW503620B (en) * 2000-02-04 2002-09-21 Sanyo Electric Co Drive apparatus for CCD image sensor
JP2002043557A (ja) * 2000-07-21 2002-02-08 Mitsubishi Electric Corp 固体撮像素子を有する半導体装置およびその製造方法
US6541794B1 (en) * 2000-08-31 2003-04-01 Motorola, Inc. Imaging device and method
US6937278B2 (en) * 2001-04-02 2005-08-30 Micron Technology, Inc. Row driver circuit for a sensor including a shared row-reset bus and a charge pump boosting circuit
JP4049603B2 (ja) * 2002-03-29 2008-02-20 三洋電機株式会社 撮像装置
JP3840203B2 (ja) 2002-06-27 2006-11-01 キヤノン株式会社 固体撮像装置及び固体撮像装置を用いたカメラシステム
JP2004228871A (ja) * 2003-01-22 2004-08-12 Seiko Epson Corp 画像処理装置、画像処理方法及び固体撮像装置
JP3891126B2 (ja) * 2003-02-21 2007-03-14 セイコーエプソン株式会社 固体撮像装置
JP4890737B2 (ja) * 2003-12-01 2012-03-07 日本電気株式会社 電流駆動型デバイスの駆動回路、電流駆動型装置及びその駆動方法
JP4004484B2 (ja) * 2004-03-31 2007-11-07 シャープ株式会社 固体撮像素子の製造方法
KR100621561B1 (ko) * 2004-11-05 2006-09-19 삼성전자주식회사 Ｃｍｏｓ 이미지 센서 및 그 구동 방법
KR100621558B1 (ko) * 2004-11-08 2006-09-19 삼성전자주식회사 Ｃｍｏｓ 이미지 센서 및 그 구동 방법
US7675015B2 (en) 2004-11-08 2010-03-09 Samsung Electronics Co., Ltd. CMOS image sensor with boosted voltage signal and related method of operation
JP4686201B2 (ja) * 2005-01-27 2011-05-25 パナソニック株式会社 固体撮像装置及びその製造方法
JP2006300615A (ja) * 2005-04-18 2006-11-02 Umc Japan 外観検査装置及び外観検査方法
US7755684B2 (en) * 2006-08-29 2010-07-13 Micron Technology, Inc. Row driver circuitry for imaging devices and related method of operation
US7989853B2 (en) * 2008-08-07 2011-08-02 Texas Instruments Incorporated Integration of high voltage JFET in linear bipolar CMOS process
CN105107682A (zh) * 2015-09-02 2015-12-02 镇江泛沃汽车零部件有限公司 一种方向盘助力转向系统中侦测齿轮的涂油装置
CN108920845B (zh) * 2018-07-06 2023-02-21 福州大学 一种实现氧化锌线状晶体管电导可调的方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59198756A (ja) * 1983-04-27 1984-11-10 Hitachi Ltd 固体撮像素子およびその製造方法
JP2786665B2 (ja) * 1989-04-14 1998-08-13 株式会社東芝 電荷転送装置
JP3271086B2 (ja) * 1992-09-29 2002-04-02 ソニー株式会社 固体撮像素子の駆動回路
JPH0786549A (ja) * 1993-06-29 1995-03-31 Canon Inc 光電変換装置及び該装置を搭載した情報処理装置
JP2827993B2 (ja) * 1995-12-22 1998-11-25 ソニー株式会社 固体撮像素子
DE69738645T2 (de) * 1996-05-22 2009-06-10 Eastman Kodak Co. Aktiver Pixelsensor mit Durchbruch-Rücksetzstruktur und Unterdrückung des Übersprechsignales
JP3369911B2 (ja) * 1997-06-30 2003-01-20 株式会社東芝 固体撮像装置
JP2935492B2 (ja) 1997-10-30 1999-08-16 イノビジョン株式会社 固体撮像素子及び固体撮像素子による光信号検出方法
US6051857A (en) * 1998-01-07 2000-04-18 Innovision, Inc. Solid-state imaging device and method of detecting optical signals using the same
JPH11306784A (ja) * 1998-04-24 1999-11-05 Canon Inc 昇圧回路
KR100291179B1 (ko) * 1998-06-29 2001-07-12 박종섭 자기정렬된실리사이드층을갖는씨모스이미지센서및그제조방법
JP3895930B2 (ja) * 2001-01-09 2007-03-22 三洋電機株式会社 固体撮像装置

Also Published As

Publication number Publication date
EP1115245A2 (en) 2001-07-11
KR20010070423A (ko) 2001-07-25
DE60127883T2 (de) 2008-01-17
US6768093B2 (en) 2004-07-27
CN1258227C (zh) 2006-05-31
US20010017381A1 (en) 2001-08-30
CN1304178A (zh) 2001-07-18
TW483127B (en) 2002-04-11
DE60127883D1 (de) 2007-05-31
US6476371B2 (en) 2002-11-05
KR100377598B1 (ko) 2003-03-29
EP1115245B1 (en) 2007-04-18
US20030010897A1 (en) 2003-01-16
EP1115245A3 (en) 2002-11-27

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