DE69837238D1 - Festkörper-Bildaufnahmevorrichtung und Verfahren zu ihrer Ansteuerung - Google Patents

Festkörper-Bildaufnahmevorrichtung und Verfahren zu ihrer Ansteuerung

Info

Publication number
DE69837238D1
DE69837238D1 DE69837238T DE69837238T DE69837238D1 DE 69837238 D1 DE69837238 D1 DE 69837238D1 DE 69837238 T DE69837238 T DE 69837238T DE 69837238 T DE69837238 T DE 69837238T DE 69837238 D1 DE69837238 D1 DE 69837238D1
Authority
DE
Germany
Prior art keywords
solid
driving
image pickup
pickup device
state image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69837238T
Other languages
English (en)
Other versions
DE69837238T2 (de
Inventor
Ryoji Suzuki
Kazuya Yonemoto
Takahisa Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE69837238D1 publication Critical patent/DE69837238D1/de
Publication of DE69837238T2 publication Critical patent/DE69837238T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE69837238T 1997-09-26 1998-09-18 Festkörper-Bildaufnahmevorrichtung und Verfahren zu ihrer Ansteuerung Expired - Lifetime DE69837238T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP26120797 1997-09-26
JP26120797A JP3918248B2 (ja) 1997-09-26 1997-09-26 固体撮像素子およびその駆動方法

Publications (2)

Publication Number Publication Date
DE69837238D1 true DE69837238D1 (de) 2007-04-19
DE69837238T2 DE69837238T2 (de) 2007-11-08

Family

ID=17358639

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69837238T Expired - Lifetime DE69837238T2 (de) 1997-09-26 1998-09-18 Festkörper-Bildaufnahmevorrichtung und Verfahren zu ihrer Ansteuerung

Country Status (6)

Country Link
US (1) US6842192B1 (de)
EP (1) EP0905787B1 (de)
JP (1) JP3918248B2 (de)
KR (1) KR100616044B1 (de)
CN (1) CN1156147C (de)
DE (1) DE69837238T2 (de)

Families Citing this family (24)

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JPH11346331A (ja) * 1998-06-02 1999-12-14 Sony Corp 固体撮像装置およびその駆動方法
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US6831690B1 (en) * 1999-12-07 2004-12-14 Symagery Microsystems, Inc. Electrical sensing apparatus and method utilizing an array of transducer elements
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GB0026205D0 (en) * 2000-10-26 2000-12-13 Koninkl Philips Electronics Nv An image sensor
JP4773631B2 (ja) * 2001-05-25 2011-09-14 富士通セミコンダクター株式会社 連想記憶装置及びプリチャージ方法
US7420602B2 (en) * 2001-05-29 2008-09-02 Samsung Semiconductor Israel R&D Center (Sirc) Cmos imager for cellular applications and methods of using such
US7738013B2 (en) * 2001-05-29 2010-06-15 Samsung Electronics Co., Ltd. Systems and methods for power conservation in a CMOS imager
JP4681767B2 (ja) * 2001-07-17 2011-05-11 キヤノン株式会社 撮像装置およびカメラ
JP4195802B2 (ja) * 2001-09-21 2008-12-17 イーエヌジー株式会社 半導体撮像素子
GB0212001D0 (en) * 2002-05-24 2002-07-03 Koninkl Philips Electronics Nv X-ray image detector
JP3641260B2 (ja) * 2002-09-26 2005-04-20 株式会社東芝 固体撮像装置
US7068446B2 (en) * 2003-05-05 2006-06-27 Illumitech Inc. Compact non-imaging light collector
JP4207659B2 (ja) * 2003-05-16 2009-01-14 ソニー株式会社 固体撮像装置およびその駆動方法、ならびにカメラ装置
KR20050077434A (ko) * 2004-01-28 2005-08-02 삼성전자주식회사 소비 전력을 줄일 수 있는 고체 촬상 장치
KR100871687B1 (ko) * 2004-02-11 2008-12-05 삼성전자주식회사 서브 샘플링 모드에서 디스플레이 품질을 개선한 고체촬상 소자 및 그 구동 방법
JP2005348041A (ja) * 2004-06-02 2005-12-15 Canon Inc 固体撮像装置および撮像システム
JP2006332796A (ja) * 2005-05-23 2006-12-07 Hamamatsu Photonics Kk 光検出装置
US8471189B2 (en) 2006-05-19 2013-06-25 The Trustees Of The University Of Pennsylvania CMOS linear voltage/current dual-mode imager
JP4793281B2 (ja) * 2007-02-21 2011-10-12 ソニー株式会社 撮像装置および表示装置
JP5089674B2 (ja) * 2009-11-30 2012-12-05 キヤノン株式会社 撮像装置
JP2013089980A (ja) * 2011-10-13 2013-05-13 Sony Corp 駆動装置、駆動方法、及びプログラム
FR2985839B1 (fr) * 2012-01-16 2014-02-07 Soitec Silicon On Insulator Circuit et procede pour detecter une difference de tension sur une paire de lignes de signal duales, en particulier par un transistor d'egalisation
CN111263089B (zh) * 2020-05-06 2020-10-16 深圳市汇顶科技股份有限公司 像素、图像传感器及电子装置

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US4958085A (en) * 1987-10-30 1990-09-18 Canon Kabushiki Kaisha Scanning circuit outputting scanning pulse signals of two or more phases
US5043820A (en) * 1989-03-27 1991-08-27 Hughes Aircraft Company Focal plane array readout employing one capacitive feedback transimpedance amplifier for each column
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JPH043588A (ja) * 1990-04-20 1992-01-08 Canon Inc 固体撮像装置
JP2993144B2 (ja) * 1991-02-22 1999-12-20 株式会社デンソー イメージセンサ
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JP3254007B2 (ja) * 1992-06-09 2002-02-04 株式会社半導体エネルギー研究所 薄膜状半導体装置およびその作製方法
JP3287056B2 (ja) * 1993-03-24 2002-05-27 ソニー株式会社 固体撮像装置
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JPH07169929A (ja) * 1993-12-14 1995-07-04 Sony Corp 固体撮像装置及びその製造方法
JP3253808B2 (ja) * 1994-07-07 2002-02-04 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
FR2736782B1 (fr) * 1995-04-07 1997-11-14 Commissariat Energie Atomique Dispositif et procede de lecture d'une matrice de detecteurs photoniques
JPH08293592A (ja) * 1995-04-24 1996-11-05 Sony Corp 固体撮像装置
JP3753757B2 (ja) * 1995-05-30 2006-03-08 株式会社日立製作所 固体撮像装置およびその駆動方法
DE69522720T2 (de) * 1995-07-31 2002-02-07 Ifire Technology Inc., Fort Saskatchewan Methode und apparat zum betrieb eines dual-gatter-tft-elektromagnetischen strahlungsbildwandlers
JP3834841B2 (ja) * 1995-08-03 2006-10-18 株式会社日立製作所 固体撮像素子
JPH0955883A (ja) * 1995-08-10 1997-02-25 Sony Corp 固体撮像素子の駆動方法
US6320617B1 (en) * 1995-11-07 2001-11-20 Eastman Kodak Company CMOS active pixel sensor using a pinned photo diode
JPH09139891A (ja) * 1995-11-14 1997-05-27 Nikon Corp 光電変換装置およびこれを用いた固体撮像装置
EP0777379B1 (de) * 1995-11-21 2002-02-20 STMicroelectronics S.r.l. Adaptiver optischer Sensor
JPH09219823A (ja) * 1995-12-07 1997-08-19 Alps Electric Co Ltd 密着型エリアセンサ
US5831258A (en) * 1996-08-20 1998-11-03 Xerox Corporation Pixel circuit with integrated amplifer
JP3832902B2 (ja) * 1996-08-30 2006-10-11 本田技研工業株式会社 半導体イメージセンサ
US5973311A (en) * 1997-02-12 1999-10-26 Imation Corp Pixel array with high and low resolution mode
JPH10248034A (ja) * 1997-03-03 1998-09-14 Nissan Motor Co Ltd イメージセンサ
US6037577A (en) * 1997-03-11 2000-03-14 Kabushiki Kaisha Toshiba Amplifying solid-state image pickup device and operating method of the same
US5898168A (en) * 1997-06-12 1999-04-27 International Business Machines Corporation Image sensor pixel circuit
EP1711002A3 (de) * 1997-08-15 2011-06-08 Sony Corporation Festkörper-Bildaufnahmevorrichtung und Steuerverfahren dafür
US6680223B1 (en) * 1997-09-23 2004-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
KR19990030146A (ko) 1999-04-26
KR100616044B1 (ko) 2006-12-19
CN1156147C (zh) 2004-06-30
DE69837238T2 (de) 2007-11-08
JPH11103420A (ja) 1999-04-13
EP0905787A2 (de) 1999-03-31
EP0905787B1 (de) 2007-03-07
US6842192B1 (en) 2005-01-11
EP0905787A3 (de) 1999-09-01
JP3918248B2 (ja) 2007-05-23
CN1213248A (zh) 1999-04-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)