DE60226529D1 - Festkörper-Bildaufnahmevorrichtung und Verfahren zu ihrer Ansteuerung - Google Patents

Festkörper-Bildaufnahmevorrichtung und Verfahren zu ihrer Ansteuerung

Info

Publication number
DE60226529D1
DE60226529D1 DE60226529T DE60226529T DE60226529D1 DE 60226529 D1 DE60226529 D1 DE 60226529D1 DE 60226529 T DE60226529 T DE 60226529T DE 60226529 T DE60226529 T DE 60226529T DE 60226529 D1 DE60226529 D1 DE 60226529D1
Authority
DE
Germany
Prior art keywords
solid
driving
image pickup
pickup device
state image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60226529T
Other languages
English (en)
Inventor
Keiji Mabuchi
Takahisa Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE60226529D1 publication Critical patent/DE60226529D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE60226529T 2001-01-15 2002-01-09 Festkörper-Bildaufnahmevorrichtung und Verfahren zu ihrer Ansteuerung Expired - Lifetime DE60226529D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001006657A JP3724374B2 (ja) 2001-01-15 2001-01-15 固体撮像装置及びその駆動方法

Publications (1)

Publication Number Publication Date
DE60226529D1 true DE60226529D1 (de) 2008-06-26

Family

ID=18874512

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60226529T Expired - Lifetime DE60226529D1 (de) 2001-01-15 2002-01-09 Festkörper-Bildaufnahmevorrichtung und Verfahren zu ihrer Ansteuerung

Country Status (4)

Country Link
US (2) US7259790B2 (de)
EP (1) EP1223623B1 (de)
JP (1) JP3724374B2 (de)
DE (1) DE60226529D1 (de)

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JP2006042121A (ja) 2004-07-29 2006-02-09 Sharp Corp 増幅型固体撮像装置
US7800675B2 (en) * 2004-08-25 2010-09-21 Aptina Imaging Corporation Method of operating a storage gate pixel
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JP2006314025A (ja) * 2005-05-09 2006-11-16 Sony Corp 撮像装置と撮像装置用の電源供給方法
JP4645294B2 (ja) * 2005-05-13 2011-03-09 ソニー株式会社 撮像装置と撮像装置用の電源供給方法
JP5051994B2 (ja) * 2005-09-26 2012-10-17 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および撮像装置
JP4848739B2 (ja) * 2005-11-01 2011-12-28 ソニー株式会社 物理量検出装置および撮像装置
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JP4615472B2 (ja) * 2006-04-03 2011-01-19 ソニー株式会社 物理量分布検出装置および撮像装置
JP4242880B2 (ja) * 2006-05-17 2009-03-25 日本テキサス・インスツルメンツ株式会社 固体撮像装置及びその動作方法
JP2008124395A (ja) * 2006-11-15 2008-05-29 Matsushita Electric Ind Co Ltd 固体撮像装置
JP2008136047A (ja) 2006-11-29 2008-06-12 Sony Corp 固体撮像装置及び撮像装置
US20080136945A1 (en) * 2006-12-06 2008-06-12 Altasens, Inc. Apparatus and method for reducing dark current
US8058675B2 (en) 2006-12-27 2011-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device using the same
JP5016941B2 (ja) * 2007-02-08 2012-09-05 株式会社東芝 固体撮像装置
JP5584982B2 (ja) * 2009-02-09 2014-09-10 ソニー株式会社 固体撮像素子およびカメラシステム
JP4974701B2 (ja) * 2007-02-21 2012-07-11 オリンパス株式会社 固体撮像装置
KR100880528B1 (ko) * 2007-06-01 2009-01-28 매그나칩 반도체 유한회사 Ｃｍｏｓ 이미지 센서
US8072015B2 (en) * 2007-06-04 2011-12-06 Sony Corporation Solid-state imaging device and manufacturing method thereof
US7787032B2 (en) 2007-06-29 2010-08-31 Aptina Imaging Corporation Method and apparatus for dark current reduction in image sensors
JP4991436B2 (ja) 2007-08-02 2012-08-01 キヤノン株式会社 撮像装置及び撮像システム
JP2009059811A (ja) * 2007-08-30 2009-03-19 Sharp Corp 固体撮像装置および電子情報機器
US8035718B2 (en) * 2008-03-26 2011-10-11 Aptina Imaging Corporation Systems, methods, and devices for preventing shoot-through current within and between signal line drivers of semiconductor devices
JP5266884B2 (ja) * 2008-05-30 2013-08-21 ソニー株式会社 固体撮像装置、撮像装置、画素駆動方法
JP4788742B2 (ja) * 2008-06-27 2011-10-05 ソニー株式会社 固体撮像装置及び電子機器
US8860861B2 (en) * 2008-08-11 2014-10-14 Honda Motor Co., Ltd. Pixel, pixel forming method, imaging device and imaging forming method
US8772891B2 (en) * 2008-12-10 2014-07-08 Truesense Imaging, Inc. Lateral overflow drain and channel stop regions in image sensors
JP2010200025A (ja) * 2009-02-25 2010-09-09 Panasonic Corp 固体撮像装置
JP5215963B2 (ja) 2009-04-10 2013-06-19 シャープ株式会社 固体撮像素子およびその駆動方法、固体撮像素子の製造方法、電子情報機器
JP5482137B2 (ja) 2009-11-19 2014-04-23 ソニー株式会社 固体撮像装置、負荷電流源回路
JP5489681B2 (ja) 2009-12-02 2014-05-14 キヤノン株式会社 固体撮像装置
US20120305751A1 (en) * 2010-02-05 2012-12-06 Masayuki Kusuda Solid-State Image Capture Device
JP5388939B2 (ja) * 2010-04-27 2014-01-15 キヤノン株式会社 固体撮像素子
JP5083380B2 (ja) * 2010-06-25 2012-11-28 ソニー株式会社 固体撮像装置及び電子機器
JP5361938B2 (ja) * 2011-05-02 2013-12-04 キヤノン株式会社 固体撮像装置及びカメラ
FR2982075A1 (fr) 2011-10-26 2013-05-03 St Microelectronics Sa Capteur d'images comprenant des elements d'image selectionnables individuellement
JP5299496B2 (ja) * 2011-11-24 2013-09-25 ソニー株式会社 固体撮像素子及びカメラ装置
FR2986906B1 (fr) 2012-02-15 2015-06-19 New Imaging Technologies Sas Structure de pixel actif a transfert de charge ameliore
FR3018653B1 (fr) 2014-03-11 2016-03-04 E2V Semiconductors Procede de capture d'image avec reduction de courant d'obscurite et faible consommation
JP2016143850A (ja) * 2015-02-05 2016-08-08 ソニー株式会社 固体撮像装置および電子機器
JP2016154166A (ja) 2015-02-20 2016-08-25 キヤノン株式会社 光電変換装置及びその製造方法
JP2016178408A (ja) * 2015-03-19 2016-10-06 キヤノン株式会社 固体撮像装置及びその駆動方法、並びに撮像システム
CN113099138A (zh) 2015-09-30 2021-07-09 株式会社尼康 拍摄元件
WO2017057397A1 (ja) * 2015-09-30 2017-04-06 株式会社ニコン 撮像素子および電子カメラ
US10044948B2 (en) * 2015-11-12 2018-08-07 Omnivision Technologies, Inc. Image sensor global shutter supply circuit with variable bandwidth
JP2021158313A (ja) * 2020-03-30 2021-10-07 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の製造方法、および電子機器

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Also Published As

Publication number Publication date
EP1223623B1 (de) 2008-05-14
US7259790B2 (en) 2007-08-21
JP3724374B2 (ja) 2005-12-07
JP2002217397A (ja) 2002-08-02
US7518168B2 (en) 2009-04-14
US20020109160A1 (en) 2002-08-15
EP1223623A3 (de) 2005-04-20
US20070278533A1 (en) 2007-12-06
EP1223623A2 (de) 2002-07-17

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