FR2702882B1 - Procédé de fabrication de transistors à couches minces étagés directs. - Google Patents

Procédé de fabrication de transistors à couches minces étagés directs.

Info

Publication number
FR2702882B1
FR2702882B1 FR9303012A FR9303012A FR2702882B1 FR 2702882 B1 FR2702882 B1 FR 2702882B1 FR 9303012 A FR9303012 A FR 9303012A FR 9303012 A FR9303012 A FR 9303012A FR 2702882 B1 FR2702882 B1 FR 2702882B1
Authority
FR
France
Prior art keywords
thin film
film transistors
direct step
step thin
manufacturing direct
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9303012A
Other languages
English (en)
Other versions
FR2702882A1 (fr
Inventor
Sanson Eric
Szydlo Nicolas
Hepp Bernard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thomson-LCD
Original Assignee
Thomson-LCD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson-LCD filed Critical Thomson-LCD
Priority to FR9303012A priority Critical patent/FR2702882B1/fr
Priority to EP94909965A priority patent/EP0689721A1/fr
Priority to US08/522,243 priority patent/US5830785A/en
Priority to JP6520709A priority patent/JPH09506738A/ja
Priority to PCT/FR1994/000278 priority patent/WO1994021102A2/fr
Publication of FR2702882A1 publication Critical patent/FR2702882A1/fr
Application granted granted Critical
Publication of FR2702882B1 publication Critical patent/FR2702882B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
FR9303012A 1993-03-16 1993-03-16 Procédé de fabrication de transistors à couches minces étagés directs. Expired - Fee Related FR2702882B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR9303012A FR2702882B1 (fr) 1993-03-16 1993-03-16 Procédé de fabrication de transistors à couches minces étagés directs.
EP94909965A EP0689721A1 (fr) 1993-03-16 1994-03-15 Procede de fabrication de transistors a couches minces etages directs
US08/522,243 US5830785A (en) 1993-03-16 1994-03-15 Direct multilevel thin-film transistors production method
JP6520709A JPH09506738A (ja) 1993-03-16 1994-03-15 直接多層薄膜トランジスタの製造方法
PCT/FR1994/000278 WO1994021102A2 (fr) 1993-03-16 1994-03-15 Procede de fabrication de transistors a couches minces etages directs

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9303012A FR2702882B1 (fr) 1993-03-16 1993-03-16 Procédé de fabrication de transistors à couches minces étagés directs.

Publications (2)

Publication Number Publication Date
FR2702882A1 FR2702882A1 (fr) 1994-09-23
FR2702882B1 true FR2702882B1 (fr) 1995-07-28

Family

ID=9445008

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9303012A Expired - Fee Related FR2702882B1 (fr) 1993-03-16 1993-03-16 Procédé de fabrication de transistors à couches minces étagés directs.

Country Status (5)

Country Link
US (1) US5830785A (fr)
EP (1) EP0689721A1 (fr)
JP (1) JPH09506738A (fr)
FR (1) FR2702882B1 (fr)
WO (1) WO1994021102A2 (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2719416B1 (fr) * 1994-04-29 1996-07-05 Thomson Lcd Procédé de passivation des flancs d'un composant semiconducteur à couches minces.
FR2732781B1 (fr) * 1995-04-07 1997-06-20 Thomson Lcd Procede de fabrication de matrice active tft pour ecran de systeme de projection
TW418432B (en) * 1996-12-18 2001-01-11 Nippon Electric Co Manufacturing method of thin film transistor array
KR100322965B1 (ko) * 1998-03-27 2002-06-20 주식회사 현대 디스플레이 테크놀로지 액정표시소자의 제조방법
JP5408829B2 (ja) * 1999-12-28 2014-02-05 ゲットナー・ファンデーション・エルエルシー アクティブマトリックス基板の製造方法
JP4118484B2 (ja) 2000-03-06 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2001257350A (ja) 2000-03-08 2001-09-21 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4118485B2 (ja) * 2000-03-13 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4700160B2 (ja) 2000-03-13 2011-06-15 株式会社半導体エネルギー研究所 半導体装置
JP4683688B2 (ja) 2000-03-16 2011-05-18 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JP4393662B2 (ja) 2000-03-17 2010-01-06 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JP4785229B2 (ja) 2000-05-09 2011-10-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7071037B2 (en) 2001-03-06 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7652359B2 (en) 2002-12-27 2010-01-26 Semiconductor Energy Laboratory Co., Ltd. Article having display device
US7566001B2 (en) 2003-08-29 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. IC card
US8334209B2 (en) 2006-09-21 2012-12-18 Micron Technology, Inc. Method of reducing electron beam damage on post W-CMP wafers
KR101579050B1 (ko) 2008-10-03 2015-12-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62252973A (ja) * 1986-04-25 1987-11-04 Nec Corp 順スタガ−ド型薄膜トランジスタ
JPS6319876A (ja) * 1986-07-11 1988-01-27 Fuji Xerox Co Ltd 薄膜トランジスタ装置
JPS63172469A (ja) * 1987-01-12 1988-07-16 Fujitsu Ltd 薄膜トランジスタ
JPH01251016A (ja) * 1988-03-31 1989-10-06 Seiko Instr Inc 薄膜トランジスタとその製造方法
JP2771820B2 (ja) * 1988-07-08 1998-07-02 株式会社日立製作所 アクティブマトリクスパネル及びその製造方法
FR2662290B1 (fr) * 1990-05-15 1992-07-24 France Telecom Procede de realisation d'un ecran d'affichage a matrice active et a condensateurs de stockage et ecran obtenu par ce procede.
JPH04171767A (ja) * 1990-11-02 1992-06-18 Sharp Corp 薄膜トランジスタ及びその製造方法
DE69131570T2 (de) * 1990-11-16 2000-02-17 Seiko Epson Corp Verfahren zur Herstellung einer Dünnfilm-Halbleiteranordnung
US5299289A (en) * 1991-06-11 1994-03-29 Matsushita Electric Industrial Co., Ltd. Polymer dispersed liquid crystal panel with diffraction grating

Also Published As

Publication number Publication date
EP0689721A1 (fr) 1996-01-03
WO1994021102A3 (fr) 1994-11-10
FR2702882A1 (fr) 1994-09-23
WO1994021102A2 (fr) 1994-09-29
US5830785A (en) 1998-11-03
JPH09506738A (ja) 1997-06-30

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Legal Events

Date Code Title Description
ST Notification of lapse