FR2713016B1 - Dispositif semiconducteur à haute intégration et procédé pour la fabrication de celui-ci. - Google Patents

Dispositif semiconducteur à haute intégration et procédé pour la fabrication de celui-ci.

Info

Publication number
FR2713016B1
FR2713016B1 FR9410372A FR9410372A FR2713016B1 FR 2713016 B1 FR2713016 B1 FR 2713016B1 FR 9410372 A FR9410372 A FR 9410372A FR 9410372 A FR9410372 A FR 9410372A FR 2713016 B1 FR2713016 B1 FR 2713016B1
Authority
FR
France
Prior art keywords
manufacturing
semiconductor device
same
highly integrated
integrated semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9410372A
Other languages
English (en)
Other versions
FR2713016A1 (fr
Inventor
Park Kyu-Chan
Shim Tae-Earn
Yu Seon-Il
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2713016A1 publication Critical patent/FR2713016A1/fr
Application granted granted Critical
Publication of FR2713016B1 publication Critical patent/FR2713016B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78642—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical
FR9410372A 1993-11-24 1994-08-29 Dispositif semiconducteur à haute intégration et procédé pour la fabrication de celui-ci. Expired - Fee Related FR2713016B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930025138A KR0141218B1 (ko) 1993-11-24 1993-11-24 고집적 반도체장치의 제조방법

Publications (2)

Publication Number Publication Date
FR2713016A1 FR2713016A1 (fr) 1995-06-02
FR2713016B1 true FR2713016B1 (fr) 1998-09-04

Family

ID=19368843

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9410372A Expired - Fee Related FR2713016B1 (fr) 1993-11-24 1994-08-29 Dispositif semiconducteur à haute intégration et procédé pour la fabrication de celui-ci.

Country Status (5)

Country Link
US (2) US5612559A (fr)
JP (1) JPH07193142A (fr)
KR (1) KR0141218B1 (fr)
DE (1) DE4430483B4 (fr)
FR (1) FR2713016B1 (fr)

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WO1999004436A1 (fr) 1997-07-18 1999-01-28 Infineon Technologies Ag Procede pour la fabrication d'un transistor mos vertical
US6890546B2 (en) 1998-09-24 2005-05-10 Abbott Laboratories Medical devices containing rapamycin analogs
US20030129215A1 (en) * 1998-09-24 2003-07-10 T-Ram, Inc. Medical devices containing rapamycin analogs
US5907170A (en) 1997-10-06 1999-05-25 Micron Technology, Inc. Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor
US6528837B2 (en) 1997-10-06 2003-03-04 Micron Technology, Inc. Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor
US6066869A (en) * 1997-10-06 2000-05-23 Micron Technology, Inc. Circuit and method for a folded bit line memory cell with vertical transistor and trench capacitor
KR100331845B1 (ko) * 1998-01-10 2002-05-10 박종섭 박막트랜지스터제조방법
US6025225A (en) * 1998-01-22 2000-02-15 Micron Technology, Inc. Circuits with a trench capacitor having micro-roughened semiconductor surfaces and methods for forming the same
US6246083B1 (en) * 1998-02-24 2001-06-12 Micron Technology, Inc. Vertical gain cell and array for a dynamic random access memory
US6242775B1 (en) 1998-02-24 2001-06-05 Micron Technology, Inc. Circuits and methods using vertical complementary transistors
US5991225A (en) 1998-02-27 1999-11-23 Micron Technology, Inc. Programmable memory address decode array with vertical transistors
US6124729A (en) 1998-02-27 2000-09-26 Micron Technology, Inc. Field programmable logic arrays with vertical transistors
KR100260560B1 (ko) * 1998-03-18 2000-07-01 윤종용 실리콘-온 인슐레이터 구조를 이용한 반도체 메모리 장치 및 그제조 방법
US6134175A (en) 1998-08-04 2000-10-17 Micron Technology, Inc. Memory address decode array with vertical transistors
US6208164B1 (en) 1998-08-04 2001-03-27 Micron Technology, Inc. Programmable logic array with vertical transistors
DE19845004C2 (de) 1998-09-30 2002-06-13 Infineon Technologies Ag DRAM-Zellenanordnung und Verfahren zu deren Herstellung
US6153902A (en) * 1999-08-16 2000-11-28 International Business Machines Corporation Vertical DRAM cell with wordline self-aligned to storage trench
DE10028424C2 (de) * 2000-06-06 2002-09-19 Infineon Technologies Ag Herstellungsverfahren für DRAM-Speicherzellen
EP2323164B1 (fr) * 2000-08-14 2015-11-25 SanDisk 3D LLC Matrice de mémoire à niveaux multiples et son procédé de fabrication
US6465331B1 (en) * 2000-08-31 2002-10-15 Micron Technology, Inc. DRAM fabricated on a silicon-on-insulator (SOI) substrate having bi-level digit lines
US6426259B1 (en) * 2000-11-15 2002-07-30 Advanced Micro Devices, Inc. Vertical field effect transistor with metal oxide as sidewall gate insulator
DE10125967C1 (de) * 2001-05-29 2002-07-11 Infineon Technologies Ag DRAM-Zellanordnung mit vertikalen MOS-Transistoren und Verfahren zu deren Herstellung
US6690040B2 (en) * 2001-09-10 2004-02-10 Agere Systems Inc. Vertical replacement-gate junction field-effect transistor
US6737316B2 (en) 2001-10-30 2004-05-18 Promos Technologies Inc. Method of forming a deep trench DRAM cell
DE10155023B4 (de) * 2001-11-05 2008-11-06 Qimonda Ag Leitungsanordnung für Bitleitungen zur Kontaktierung mindestens einer Speicherzelle und Verfahren zur Herstellung einer Leitungsanordnung für Bitleitungen
KR100486253B1 (ko) * 2002-08-12 2005-05-03 삼성전자주식회사 수직형 트랜지스터의 제조방법
US6790713B1 (en) 2002-09-09 2004-09-14 T-Ram, Inc. Method for making an inlayed thyristor-based device
US7135745B1 (en) 2002-09-09 2006-11-14 T-Ram, Inc. Fin thyristor-based semiconductor device
US7547945B2 (en) * 2004-09-01 2009-06-16 Micron Technology, Inc. Transistor devices, transistor structures and semiconductor constructions
US7384849B2 (en) 2005-03-25 2008-06-10 Micron Technology, Inc. Methods of forming recessed access devices associated with semiconductor constructions
KR100673105B1 (ko) * 2005-03-31 2007-01-22 주식회사 하이닉스반도체 반도체 소자의 수직형 트랜지스터 및 그의 형성 방법
US7282401B2 (en) 2005-07-08 2007-10-16 Micron Technology, Inc. Method and apparatus for a self-aligned recessed access device (RAD) transistor gate
US7867851B2 (en) * 2005-08-30 2011-01-11 Micron Technology, Inc. Methods of forming field effect transistors on substrates
KR100833182B1 (ko) 2005-11-17 2008-05-28 삼성전자주식회사 수직채널 트랜지스터를 구비한 반도체 메모리장치 및 그제조 방법
TWI293207B (en) * 2006-01-11 2008-02-01 Promos Technologies Inc Dynamic random access memory structure and method for preparing the smae
US7700441B2 (en) 2006-02-02 2010-04-20 Micron Technology, Inc. Methods of forming field effect transistors, methods of forming field effect transistor gates, methods of forming integrated circuitry comprising a transistor gate array and circuitry peripheral to the gate array, and methods of forming integrated circuitry comprising a transistor gate array including first gates and second grounded isolation gates
US7602001B2 (en) 2006-07-17 2009-10-13 Micron Technology, Inc. Capacitorless one transistor DRAM cell, integrated circuitry comprising an array of capacitorless one transistor DRAM cells, and method of forming lines of capacitorless one transistor DRAM cells
US7772632B2 (en) * 2006-08-21 2010-08-10 Micron Technology, Inc. Memory arrays and methods of fabricating memory arrays
US7589995B2 (en) * 2006-09-07 2009-09-15 Micron Technology, Inc. One-transistor memory cell with bias gate
US7923373B2 (en) 2007-06-04 2011-04-12 Micron Technology, Inc. Pitch multiplication using self-assembling materials
JP5623005B2 (ja) * 2008-02-01 2014-11-12 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置及びその製造方法
US8072345B2 (en) * 2008-02-14 2011-12-06 Darren Gallo Electronic flare system and apparatus
US8617952B2 (en) * 2010-09-28 2013-12-31 Seagate Technology Llc Vertical transistor with hardening implatation
US9698145B1 (en) * 2015-12-28 2017-07-04 International Business Machines Corporation Implementation of long-channel thick-oxide devices in vertical transistor flow
KR102576428B1 (ko) * 2016-04-29 2023-09-08 삼성디스플레이 주식회사 어레이 기판, 이를 포함하는 액정 표시 장치 및 어레이 기판의 제조 방법
US9960272B1 (en) 2017-05-16 2018-05-01 International Business Machines Corporation Bottom contact resistance reduction on VFET
US10020381B1 (en) 2017-05-17 2018-07-10 International Business Machines Corporation Embedded bottom metal contact formed by a self-aligned contact process for vertical transistors
KR102332456B1 (ko) * 2017-08-31 2021-12-02 마이크론 테크놀로지, 인크 두 개의 트랜지스터들과 하나의 캐패시터를 갖는 메모리 셀을 가지며, 기준 전압과 결합된 트랜지스터들의 바디 영역들을 갖는 장치
US10121877B1 (en) 2017-09-13 2018-11-06 International Business Machines Corporation Vertical field effect transistor with metallic bottom region
WO2023188002A1 (fr) * 2022-03-29 2023-10-05 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド Dispositif de mémoire à semi-conducteurs

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Also Published As

Publication number Publication date
KR0141218B1 (ko) 1998-07-15
DE4430483B4 (de) 2007-08-02
JPH07193142A (ja) 1995-07-28
FR2713016A1 (fr) 1995-06-02
DE4430483A1 (de) 1995-06-01
US5571730A (en) 1996-11-05
KR950015659A (ko) 1995-06-17
US5612559A (en) 1997-03-18

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Effective date: 20130430