FR2709378B1 - Transistor à effet de champ et procédé pour la fabrication d'un tel transistor. - Google Patents

Transistor à effet de champ et procédé pour la fabrication d'un tel transistor.

Info

Publication number
FR2709378B1
FR2709378B1 FR9410496A FR9410496A FR2709378B1 FR 2709378 B1 FR2709378 B1 FR 2709378B1 FR 9410496 A FR9410496 A FR 9410496A FR 9410496 A FR9410496 A FR 9410496A FR 2709378 B1 FR2709378 B1 FR 2709378B1
Authority
FR
France
Prior art keywords
transistor
manufacturing
field effect
effect transistor
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9410496A
Other languages
English (en)
Other versions
FR2709378A1 (fr
Inventor
Yasutaka Kohno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5013607A external-priority patent/JPH06232170A/ja
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to FR9410496A priority Critical patent/FR2709378B1/fr
Publication of FR2709378A1 publication Critical patent/FR2709378A1/fr
Application granted granted Critical
Publication of FR2709378B1 publication Critical patent/FR2709378B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0891—Source or drain regions of field-effect devices of field-effect transistors with Schottky gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H01L29/66878—Processes wherein the final gate is made before the formation, e.g. activation anneal, of the source and drain regions in the active layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
FR9410496A 1993-01-29 1994-08-31 Transistor à effet de champ et procédé pour la fabrication d'un tel transistor. Expired - Fee Related FR2709378B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR9410496A FR2709378B1 (fr) 1993-01-29 1994-08-31 Transistor à effet de champ et procédé pour la fabrication d'un tel transistor.

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP5013607A JPH06232170A (ja) 1993-01-29 1993-01-29 電界効果トランジスタ及びその製造方法
FR9310400A FR2701166B1 (fr) 1993-01-29 1993-08-31 Transistor a effet de champ et procede pour la fabrication d'un tel transistor.
FR9410496A FR2709378B1 (fr) 1993-01-29 1994-08-31 Transistor à effet de champ et procédé pour la fabrication d'un tel transistor.

Publications (2)

Publication Number Publication Date
FR2709378A1 FR2709378A1 (fr) 1995-03-03
FR2709378B1 true FR2709378B1 (fr) 1995-11-24

Family

ID=27252787

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9410496A Expired - Fee Related FR2709378B1 (fr) 1993-01-29 1994-08-31 Transistor à effet de champ et procédé pour la fabrication d'un tel transistor.

Country Status (1)

Country Link
FR (1) FR2709378B1 (fr)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5852881A (ja) * 1981-09-25 1983-03-29 Oki Electric Ind Co Ltd 半導体素子の製造方法
JPS59198763A (ja) * 1983-04-27 1984-11-10 Hitachi Ltd Ｍｏｓ形電界効果トランジスタおよびその製造方法
JPS6161465A (ja) * 1984-09-03 1986-03-29 Hitachi Ltd Ｍｏｓ形電界効果トランジスタおよびその製造方法
EP0412701B1 (fr) * 1989-07-31 1996-09-25 Canon Kabushiki Kaisha Transistor en couche mince et sa méthode de préparation
JP3034546B2 (ja) * 1990-02-19 2000-04-17 沖電気工業株式会社 電界効果型トランジスタの製造方法

Also Published As

Publication number Publication date
FR2709378A1 (fr) 1995-03-03

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Legal Events

Date Code Title Description
ST Notification of lapse