TW201320229A - 基板處理系統及方法 - Google Patents

基板處理系統及方法 Download PDF

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TW201320229A
TW201320229A TW101141546A TW101141546A TW201320229A TW 201320229 A TW201320229 A TW 201320229A TW 101141546 A TW101141546 A TW 101141546A TW 101141546 A TW101141546 A TW 101141546A TW 201320229 A TW201320229 A TW 201320229A
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wafer
processing
chuck
suction cup
array
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Terry Pederson
Henry Hieslmair
Moon Chun
Vinay Prabhakar
Babak Adibi
Terry Bluck
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Intevac Inc
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Abstract

一具有真空包覆及位於真空包覆內之處理腔，用以處理晶圓之基板處理系統。提供二軌道組件，各位於處理區之一側。二吸盤陣列移動裝置各位於一軌道組件上，且懸吊於其上並支持複數吸盤。該軌道組件耦合一升降裝置，用以在處理時將軌道升至上方位置，在移回以裝載新晶圓時將吸盤組件降至下方位置。一拾取頭組件自輸送帶裝載晶圓至吸盤組件。該拾取頭具有複數個能自前端拾取晶圓之靜電吸盤。一冷卻通道位在處理吸盤中，用來製造氣體緩衝，以在拾取頭傳送時協助對準晶圓。

Description

基板處理系統及方法
本件申請案主張美國臨時申請案(Provisional Application)第61/557,363號，申請日2011年11月8日申請案之優先權，該案的揭示內容全部都可作為本案之參考。
本申請案關於一種用於基板處理的系統及方法，例如以矽基板處理形成半導體電路、太陽能電池、平板顯示器等。
基板處理系統在該技術領域中已廣為人知。基板處理系統之實例包括濺鍍系統及離子植入系統。雖然在許多這樣的系統中，基板在處理過程是固定的，這類的固定系統對於滿足近期高產率處理的需求是有困難的。高產率處理的性能在處理基板(例如，太陽能電池)來說是特別需要。因此，需要新的系統架構以滿足這一需求。
以下對本發明的簡述，目的在於對本發明之各種概念和特徵作一基本說明。本簡述並非對發明的廣泛表述，因此其目的不在列舉發明的關鍵要素，或界定發明的範圍，而是意欲以簡化的方式呈現發明的數種概念，作為下述詳細說明的前言。
本發明揭示一種可以高產率加工基板之處理系統及方法。在一實施例中提供一種系統，其中，該基板在處理系統(例如，濺射靶材或離子植入光束)前不斷地移動。在處理系統前的行進過程中，基板以第一速度移動，且行進到裝載和卸載位置/從裝載和卸載位置離開過程中，基板以第二速度移動，第二速度遠高於第一速度移動。這種方式可達成一整體 系統的高產率。
本發明揭示之數種實施例，提供一使用兩個吸盤陣列，用以處理基板(例如離子植入)之真空處理系統。所揭示的實施例中，各吸盤陣列具有兩列晶圓位在各陣列靜電吸盤上，但其他的實施例，也可使用一列或多列。該陣列裝置在腔室的相對兩側，使其可以各自在不干擾其他陣列的操作情況下，與水/氣體和電氣形成連接。在各陣列至少使用兩列以達成連續處理，即，處理腔沒有閒置時間的連續使用。例如，藉由使用兩列進行離子植入，該離子束總是可以在另一陣列卸載/裝載並回到處理位置的過程中，處理一吸盤陣列，直到該吸盤陣列退出光束。
本發明揭示之實施例中，吸盤陣列上所有晶圓在同一時間裝載。該晶圓來自成列的裝載裝置，且數個晶圓並排，例如，3個晶圓並排。當兩列存在於進料輸送帶，該晶圓被抬起至一取放裝置。一實施例中，該取放裝置使用靜電吸盤以抓住該晶圓，但是，也可以使用其他裝置，如真空吸放。該系統可任選包括動態晶圓定位裝置來定位吸盤上晶圓，與正確調整以確保該處理對準晶圓。例如，當進行離子植入時，可對準以確保植入特徵與晶圓邊緣垂直或平行。
在一實施例中，該吸盤陣列具有手動對準特徵，在設定過程中使用，以確保行進方向是平行於該處理腔(例如平行於植入光罩的特徵)。在一實例中，該吸盤陣列首先藉由位於光罩位置的照相機和陣列上的特徵對準至植入光罩。接著在取放裝置上的各個取放頭藉由從輸入輸送帶至吸盤陣列傳送一具有精確對準特徵的對準用晶圓以對準至光罩。該陣列接著在光罩對準用照相機下移動並判斷該對準用晶圓的角度偏移。這個角度偏移接著用來調整取放頭。其後重複該步驟，直到對準達到滿意程度為止。這些步驟建立一固定的調整。在晶片處理期間，它們並非由系統動態地控制和改變。
該取放頭也許也具有動態晶圓對準功能。例如，當晶圓浮在一氣體緩衝上時可使用棘爪將晶圓推向對準銷。這個氣體緩衝可以流動的 氣體通過晶圓冷卻通道進入吸盤形成，如此該冷卻通道即具有雙重用途。如果需要的話，該對準銷可以安裝在壓電平台做動態升降控制。
在一具體範例中，提供一離子植入系統，該系統包括一真空包覆，一離子植入腔以提供一離子束進入真空包覆內的處理區。第一及第二吸盤陣列建置成可在第一和第二軌道組件上分別的來回移動，其中之一升降裝置用以改變軌道組件在一上方位置和一下方位置之間的升降。第一和第二吸盤陣列各具有一個懸臂部分，並有多數處理吸盤位在其上。第一和第二吸盤組件各自形成：當該各自的軌道組件是在上方位置時，吸盤組件在其各自軌道組件上向前移動，並且當該各自軌道組件在下方位置時，吸盤組件在其各自軌道組件上向後移動，從而在其他吸盤組件下方通過。
本發明所述之離子植入系統具有一傳送帶，位在真空包覆內側的入口處，及一移除輸送帶，位在真空腔內側出口處。一第一拾取裝置設成從輸送帶移除晶圓，並放置晶圓到第一和第二吸盤組件。一第二拾取裝置設成從第一和第二吸盤組件移除晶圓且傳送晶圓至移除傳送帶。提供一照相機以達成第一拾取裝置的對準。該照相機用來在第一及第二吸盤組件位在處理區時，拍攝其影像。分析該影像可以判斷第一拾取裝置是否對準。
該吸盤組件設計成：在處理區中以第一速度行進，及在反向或向後方向時以一第二速度行進，該第二速度較第一速度快。在這種配置下，當軌道組件在上方位置時，該吸盤組件可以依據其位置不同，以快速向前或慢速向前的方式行進，但當軌道組件在下方位置時，該吸盤組件均是反向快速行進。
第一和第二吸盤組件各具有複數具有氣流通道的靜電吸盤。該第一和第二吸盤組件設計成運送氣體至氣流通道，以便當晶圓裝載到靜電吸盤上時產生氣體緩衝。第一和第二吸盤組件各還具有多數對準銷。也可包括致動器，以致動銷，而移動到一上方位置，用以作晶圓對準，以及在對準後移動至一下方位置。
第一及第二拾取裝置各包括複數拾取吸盤，配置以模仿第一及第二吸盤組件的處理吸盤的配置。各個拾取吸盤具有相配合的晶圓對準致動器，用以在晶圓對準程序期間推壓晶圓。該晶圓對準致動器可設成推壓晶圓朝向附著至吸盤組件的對準銷。
100‧‧‧真空包覆
102‧‧‧基板
105‧‧‧拾取頭配置
106‧‧‧吸盤
110‧‧‧軌道
115‧‧‧處理腔
119‧‧‧照相機
125‧‧‧卸載拾取頭
130‧‧‧輸送帶
135‧‧‧輸送帶
145‧‧‧處理區
147‧‧‧植入光束
170‧‧‧光罩
190‧‧‧轉軸
352、357‧‧‧吸盤
355‧‧‧軌道
360‧‧‧升降裝置
372、374‧‧‧懸臂式支架
373、375‧‧‧驅動組件
374、376‧‧‧懸空支撐組件
502‧‧‧晶圓
505‧‧‧靜電吸盤
590‧‧‧雙箭頭
512‧‧‧接觸點
580‧‧‧對準銷
585‧‧‧可動棘爪
605‧‧‧靜電吸盤
680‧‧‧固定銷
685‧‧‧棘爪
690‧‧‧轉軸
702‧‧‧晶圓
705‧‧‧靜電吸盤
780‧‧‧桿
790‧‧‧轉軸
802‧‧‧晶圓
805‧‧‧靜電吸盤
806‧‧‧處理吸盤
833‧‧‧通道
855‧‧‧桿
874‧‧‧基底
880‧‧‧固定銷
885‧‧‧棘爪
890‧‧‧轉軸
本專利說明書所附的圖式納入本件專利說明書中，並成為其一部份，是用來例示本發明的實施例，並與本案的說明內容共同用來說明及展示本發明的原理。圖式的目的只在以圖型方式例示本發明實施例的主要特徵。圖式並不是用來顯示實際上的範例的全部特徵，也不是用來表示其中各元件之相對尺寸，或其比例。
第1圖顯示根據本發明一實施例系統與結構主要部分之截面示意圖。
第2圖為一吸盤陣列之俯視圖，描述一處理流程以顯示第1圖所顯示實施例之某些特徵。
第3A圖及第3B圖顯示吸盤陣列系統之一實施例。
第4圖顯示一使用在離子植入機之系統之範例。
第5圖顯示依據本發明一實施例之基板裝載之俯視圖，該裝載方式可使吸盤與晶圓精確對準。
第6圖顯示根據本發明一實施例拾取吸盤之示意圖。
第7A圖顯示一棘爪張開之拾取吸盤，而第7B圖顯示一棘爪於閉縮位置之拾取吸盤。
第8A圖顯示附一棘爪之拾取吸盤及一附對準銷處理吸盤之配置，而第8B圖為第8A圖配置之側視圖。
第9圖顯示將一晶圓傳輸於處理吸盤上之進程之流程圖。
第10圖顯示一對準拾取頭至處理腔之進程之流程圖。
本發明揭示的各種實施例，提供一種可以實現高產率處理， 特別是用以處理例如濺射法及離子植入的系統架構。該架構可以實現通過式製程，以在基板經過處理腔時，處理該基板。例如，基板可在離子束下方通過，以便當基板橫切過離子束時進行植入。在一些具體的實施例中，該離子束做成一寬帶，使其能夠同時覆蓋數個基板區域。使用這樣的配置，數個基板可以在光束下方通過，使基板可以一起同時進行處理，以提高系統的產率。
現將參照圖式說明本發明之濺射腔之實施例。第1圖顯示一系統之一部份，該系統用於處理基板並使用可動吸盤陣列，以C1和C2表示，並位在真空包覆100內。第1圖中，一處理腔115供應2可動吸盤陣列，因此所有時間中至少一個基板在處理腔處理。該處理腔115可以是例如一濺射腔，一離子植入腔等等，且具有一處理區，如箭頭145所示。該處理區可例如為一離子束。如在第1圖中顯示，由於使用可動吸盤陣列，該處理區常時會存在至少一基板，因此該腔體不會處於閒置模式，而是始終在處理至少一基板。
在第1圖的例示中，該基板102到達一輸送帶130上，在本實施方式中，是位在真空中。在本例中，3個基板並列放置，即，在第1圖中標註L1之三列。此外，在本範例中，各吸盤陣列可具有6個吸盤106，配置成2x3的陣列，如第1圖中標註之L2。一拾取頭配置105在一高架軌道110上滑行，在這個例子中，拾取頭配置105同時從傳送帶上拾取6個基板，並且將其傳送到吸盤陣列，如C1所示。
用於將晶圓102自輸送帶130傳輸至處理吸盤106上之晶圓傳輸裝置，是利用一個或多個可沿著軌道110移動之靜電拾取吸盤105且使用靜電力來拾取一個或多個晶圓，例如，一列3個晶圓102，並將晶圓傳輸至處理吸盤106。該拾取吸盤105以靜電方式自晶圓前側表面拾取晶圓，然後將晶圓放置於可自晶圓後側以靜電方式吸取晶圓之處理吸盤106上。這樣的配置特別適用於處理較容許自前端表面操作的太陽能電池。
同時，吸盤陣列C2接連地通過處理腔115的處理區145， 如此一來，6個基板都能被處理到。當自處理區145下方穿越時，吸盤陣列的移動為一定速(在此稱為S1)。一旦吸盤陣列C1裝載基板102後，將移動進入吸盤陣列C2後的處理位置。此進入處理位置之移動是以另一速度進行(在此稱為S2，較速度S1為快)，因此吸盤C1能在吸盤陣列C2上的基板處理完成前完成裝載並移動至處理位置。接著吸盤陣列C1在吸盤陣列C2後方以速度S1移動，以便當吸盤陣列C2離開處理區145時，吸盤C1能立即進入處理區145。此狀況如同第2圖中描述的狀況A，其中吸盤陣列C2剛處理完成而吸盤陣列C1進入處理區145。在第2圖顯示的位置中，吸盤陣列C1剛剛開始進入處理區145，例如，剛開始通過植入光束147下方。吸盤陣列C1將繼續以速度S1慢慢移動通過植入區147，例如以大約35mm/sec的速度。另一方面，該吸盤陣列C2大約剛離開植入光束147的覆蓋範圍。
一旦吸盤陣列C2通過處理區，即，離開離子束147的覆蓋範圍，接著加速且以一速度S2移動至卸載位置，如第2圖的情況B所述。此時，吸盤陣列C1前端開始在處理區下方進行處理，且繼續以速度S1移動。正如這個例子中所示，該吸盤陣列C1的排列，使得3個基板可同時處理。當然，也能同時處理較多或較少基板，均視處理區145的大小而定，在此例示中，是指離子束147的寬度。
當吸盤陣列C2停止於卸載站，如第1圖虛線所示，一卸載拾取配置125拾取基板並將其移動至輸送帶135上。然後降低該吸盤陣列C2並從吸盤陣列C1下方以速度S2移動至裝載站，如第2圖位置C所示。當吸盤陣列C2又裝載基板時，會移動進入吸盤陣列C1後方的處理位置，如第2圖位置D所示。此循環自動重複，而使處理區145內常時有基板存在。
第3A圖及第3B圖顯示吸盤陣列系統之一實施例。在本實施例中，吸盤陣列C1及C2各具有6個吸盤，352及357，其中各吸盤可為，例如，一靜電吸盤。該吸盤陣列C1裝載在一側之軌道355，而吸盤陣列C2 裝載於軌道355，位在軌道350相對的位置上，各自移動。各吸盤陣列C1和C2可以來回在軌道上移動，如雙箭頭所示。各吸盤陣列C1和C2可以使用馬達、步進馬達、線性馬達及其他工具在軌道上移動。該軌道各耦合一升降裝置360，以達到一上方位置及一下方位置。在裝載、處理、及卸載過程中，激活該升降裝置360，使軌道達到於上方位置。第3A圖顯示兩個軌道皆位在上方位置，此時所有的吸盤皆處於同一高度之狀況。然而，在從卸載位置傳送到裝載位置期間，激活該升降裝置以降低各自的軌道，而達到下方位置，以便一吸盤陣列可以從另一個下方通過。其狀態如第3B圖所示，其中，該軌道350位在下方位置且吸盤陣列C1從吸盤陣列C2下方通過。
正如第3A圖和第3B圖所示，各個吸盤陣列各具有一懸臂式支架372、374，於其上裝配吸盤。各懸臂式支架各具有一在軌道上移動的驅動組件373、375，以及有吸盤附在其上的懸空支撐組件374、376，且從各自的驅動組件處懸臂伸出。當一軌道組件位在一下方位置時，該各吸盤組件的懸空支撐組件可以從其他吸盤組件的懸空支撐組件下方通過。此外，如第3圖顯示，該支架為一懸臂式，以便當兩軌道均位在上方位置時，兩支架上吸盤的行進方向相合，如虛線所示。
第4圖顯示一系統使用離子植入機之一實施例。如第4圖顯示之系統是用於太陽能電池的製造。在太陽能電池的製造中，有時離子植入只有在基板的選定區域上進行。這種處理的實例為選擇性射極太陽能電池。根據第4圖之實施例，在離子束的路徑中放置一光罩(請參見第1圖之光罩170)，以致只有通過光罩開口的離子能到達基板。第4圖顯示使用光罩的處理如何進行及使用一數值例示的週期時間。
在第4圖中，該吸盤陣列如實線所示，且顯示以一沿行進方向的長度Lc，而光罩則以虛線表示，且顯示一沿行進方向之長度Lm。這種配置中，顯示一3x2的陣列。這樣一來，3個晶圓定位在一寬度方向上同時處理。這種特殊的光罩可以用於在晶圓表面上提供均勻的摻雜，其後對 太陽能電池的指狀接腳作增強的摻雜。也就是說，晶圓在光罩下移動，光罩的寬開口，可使離子束以較大寬度不間斷通過並同時均勻地摻雜3個晶圓表面。當晶圓持續行進到達光罩的「梳形」部分下方時，只有離子束的通過部分可以達到該晶圓，對該晶圓的直線部分作摻雜。
該摻雜的過程不斷地繼續，而植入來源總是在運行且提供離子束。第4圖顯示在連續操作期間4個狀態的4張快照。在狀態1，該吸盤陣列C2是在離子束下方，以對位在該位置上的晶圓作植入。該吸盤陣列C1的前緣正要進入該光罩覆蓋的區域。該陣列C1和C2均以低速S1行進。於狀態2，位於吸盤陣列C2上的晶圓完成離子植入，且該吸盤陣列C2的後緣正要退出該光罩覆蓋區域。此時該陣列C1和C2仍然以低速S1行進。
一旦陣列C2完全退出光罩的覆蓋區域，在時間t23期間，其加速至速度S2且行進到卸載站，在此從陣列卸載該晶圓。該陣列C2之軌道而後降低且陣列C2在陣列C1下方以速度S2行進，以達到裝載站裝載新的晶圓。裝載完成後，該陣列C2再次加速到S2，以移動到陣列C1後面的位置，然後減速到速度S1，而在陣列C1後方行進。狀態3為一陣列C2之快照，其時其前緣正要進入光罩的覆蓋區域。然後過程繼續以速度S1行進，並且，如狀態4所示，該吸盤陣列C1的後緣正要退出光罩的覆蓋區域，如此完成一循環。然後，該過程重覆且無窮循環，只要該系統上有裝載晶圓。
從第4圖的例子中可以理解，一吸盤陣列的週期時間為t12+t23+t34+t41。在一實施例中，該週期時間約為18秒。該處理時間是從吸盤陣列前緣進入光罩覆蓋區算至吸盤陣列的後緣離開光罩覆蓋區為止。然而，一吸盤陣列在處理速度下行進的時間，即，S1為較長，如第4圖所示為t12+t23+t34=18-t41。另一方面，第4圖顯示該吸盤陣列以速度S2行進，卸載並裝載新晶圓所需時間為t23，在一實施例中約為6秒。
由上述說明可以理解，為在高產率的速度下作適當的離子植入，晶圓需要以高精度對準裝載到吸盤上。不過，由於晶圓是在輸送帶上 移動，很難保持其精確的對準。第5圖顯示依據本發明一實施例之基板裝載之俯視圖，該機構可使晶圓對吸盤精確對準。在本例示中，6個基板同時對準裝載至6個吸盤上。
第5圖為第1圖所示拾取頭105之俯視圖，拾取頭105具有一3x2的靜電吸盤505陣列，用於同時裝載6個晶圓502。各吸盤505中具有沿一轉軸轉動對準的功能，如雙箭頭590所指。使晶片對準光罩的對準操作是在製程開始之前即完成。其方式可例如，如第1圖所示，將一照相機119設置在光罩170附近，用以拍攝光罩和吸盤陣列之影像。第1圖中，該拾取頭可沿轉軸190旋轉對準。為進行對準，可以使用一特殊的對準用晶圓，該對準用晶圓具有對準用光罩，因此晶圓與光罩的對準可以使用照相機119取像。一旦為一特定光罩完成對準的設定，即將該旋轉對準固定，且不需每個週期更改。實際上，該旋轉對準僅需要用於裝載拾取頭105，並不需要用於卸載拾取頭125。
各別晶圓對於其對應處理吸盤之對準是各自透過可動棘爪585執行，可動棘爪585將該晶圓推靠在對準銷580上。當吸盤505拾取一個晶圓時，該棘爪585處於打開位置，然後以例如重力回縮，即將晶圓緊壓在對準銷580，以作對準。該銷580可以是固定的或者是可移動的，例如以壓電移動，將於下段說明。正如將要描述相對於第8圖的例子中，當晶圓在對準到吸盤的過程中，可以使用氣流來使晶圓漂浮。
第6圖顯示依據本發明一實施例拾取頭之單一拾取吸盤，例如，拾取頭105的拾取吸盤505。正如第5圖中所示，6個拾取吸盤505置於一拾取頭105上，以同時運送6個晶圓。在第6圖實施例中，每個拾取吸盤有個別之沿轉軸690的徑向對準。例如，每當一個新的光罩安裝在離子植入系統上，各拾取吸盤可以單獨徑向對準，因此當他們提供晶圓至處理吸盤時，該晶圓會對準至光罩。一旦完成對準後，就可以開始處理，直到安裝一個新的光罩時才需要重新對準。
各晶圓由一靜電吸盤605支承，並對準該處理吸盤。在一實 例中，該晶圓藉由在晶圓兩側之固定銷及在另兩相反側之可移動對準桿對準。第6圖中之固定銷680為固定且設置成：1支銷位在晶圓一側中央，使2支銷位在晶圓的鄰近邊緣，距離90度角。如第5圖所示，該2銷設置在晶圓之前緣，即，在運輸過程中，晶圓的前緣側。2支可動桿，在第6圖之兩棘爪685，把晶圓推靠在固定銷上以便對準晶圓。該桿可定義接觸點，例如，銷或凸塊，使得只有所定義的接觸點觸碰該晶圓並將該晶圓推向固定銷。正如第5圖所示，有的棘爪只能有單一接觸點，而其它可能有兩個或更多的接觸點。在第5圖中，推向晶圓前緣之棘爪有2個接觸點512。
第7A圖及第7B顯示一範例，其中該桿780從晶圓的兩側推壓晶圓，已達到一對準位置。第7A圖中，桿780位在其打開位置，即，不推壓晶圓702的位置。該晶圓702由靜電吸盤705支承，靜電吸盤705沿轉軸790對準。第7B圖中，桿780呈現閉縮位置並推壓晶圓，以達到一對準位置。
第8A圖和第8B圖顯示本發明另一實施例，其中之對準部分由拾取吸頭部分由處理吸盤執行。第8A圖和第8B圖之實施例中，該靜電吸盤805沿轉軸890徑向對準且以靜電方式保持該晶圓802。在靜電吸盤805支承晶圓802期間，該棘爪885位在打開位置，此時並不推壓該晶圓802。當拾取吸盤提供晶圓至處理吸盤806時，氣體經由吸盤內的通道833泵送到晶圓下方。這產生了使晶圓漂浮的氣體緩衝。當時，該桿855為閉縮位置，例如，以重力或致動器，而可將晶圓推向固定銷880。如在本實施方式中顯示，該固定銷880連接至吸盤陣列基底874，基底874上並安裝處理吸盤806。一旦桿885將晶圓推向該銷880，可以終止空氣流，並且使處理吸盤通電，以吸取在對準位置上的晶圓。此外，在本實施方式中，銷880可在一z方向移動，用以在對準時上升，而在運送和加工過程中下降，如雙頭箭頭所示。
第9圖顯示使用第8A圖及第8B圖所示實施例傳輸晶圓至處理吸盤上過程之流程圖。相似的處理也能使用其他已揭示的實施例進 行。在上述的實施例中，是用來進行自輸送帶至處理吸盤上的傳輸，或反方向的傳輸，但相似的處理也能在自晶圓盒、晶圓托盤、機械手臂或其他方式傳輸時使用。於步驟900開始處理，放置拾取頭於拾取位置，位在要拾取的晶圓上方。在步驟905中，該拾取頭被激活，藉由真空、靜電力、機械式吸附或其他方式以拾取晶圓。在步驟910中，該拾取頭移至卸下區，例如處理吸盤上方。
由於此處理涉及到第8A圖及第8B圖的實施例，所以在步驟915中將氣流激活，以便讓氣流通過處理吸盤。此步驟可自由選用，且只在當處理吸盤包括氣流通道時進行。此類的氣體通道通常因流動冷卻氣體(例如氦氣)的目的而包括於吸盤中，但相同的配置能因製造氣體緩衝以托起晶圓於處理吸盤上的目的而使用。該氣體緩衝能藉由流動氦氣、氬氣、氮氣、空氣或其他氣體而保持。而且，如果該使用步驟，這時對準銷可能上升至其向上對準的位置。
晶圓接著在步驟920時放置於氣體緩衝上，而因為拾取頭在落下的晶圓上方上升了一些，對準裝置在步驟925時將晶圓對準於吸盤上。該對準裝置可能是固定銷及可動桿或是上述實施例中顯示的棘爪。在步驟930中減少氣流，直到其停止，以便晶圓可以緩慢地降低至吸盤上而沒有偏離對準，而在步驟935中，該晶圓被吸附在處理吸盤上。此能藉由真空、機械式夾緊、靜電力或其他方式完成。在步驟940中，移開拾取頭(如果使用拾取頭)，並降低對準銷。
第10圖為顯示一用於將拾取頭對準至處理腔過程之流程圖。這是為了對準拾取頭對處理腔的徑向位置，所以只有該處理在晶圓上產生特徵且其中特徵必須對準至晶圓的拓撲，才會執行。否則，此處理不須進行。因此，舉例來說，如果該處理在晶圓的整個表面上產生一均質的分層，則不需對準。然而，如果該處理產生例如太陽能電池上指狀接腳的特徵，則需在處理開始前執行對準。當對準完成後，不需要進一步的對準就能開始進行加工。
在步驟1000中，該拾取頭移入定位並裝載一晶圓。如果使用多個拾取吸盤，也能裝載多個晶圓。而且，在一範例中，能使用特別設計的對準用晶圓。例如，該晶圓可具有特殊標註，以協助判斷是否適當對準。在步驟1005中，該拾取頭移動以將晶圓放置於處理吸盤上。然後，在步驟1010中，吸盤陣列移至晶圓處理位置上，而在步驟1015中，拍攝吸盤及/或晶圓的影像。例如，如果系統使用離子植入穿過一光罩，該影像可能是光罩的影像，與對準用晶圓上的標註達成對準。在步驟1020中，檢查該影像且判斷是否適當對準。如果沒有，處理前進至步驟1025，在此對拾取頭進行適當的對準。然後處理重複以確認對準狀況。如果在步驟1020中確定已達成適當的對準，那麼在步驟1030中的常規處理就可以開始。
必須說明的是，以上所述之方法及技術本質上並不限於任何特定之裝置，且可以任何適用之元件組合加以達成。此外，各種態樣之泛用性裝置也可適用在所述之發明中。本發明既已利用特定之實施例說明如上，上述之說明目的僅在例示本發明。於此行業具有普通知識、技術之人士，不難由以上之說明，衍伸出其他不同組合，而實現本發明之內容。
此外，其他實現本發明的方法對於習於斯藝之人士，也可從本案的專利說明書進行考慮，並實施所述的本發明內容，而加以達成。本發明所述的實施例所使用的數種面向及/或元件，都可以單獨使用，也可以任何方式結合。本說明書及其圖式都只能作為例示之用，本發明真正的範圍與精神，只能由以下的申請專利範圍所規範。
100‧‧‧真空包覆
102‧‧‧基板
105‧‧‧拾取頭配置
106‧‧‧吸盤
110‧‧‧軌道
115‧‧‧處理腔
119‧‧‧照相機
125‧‧‧卸載拾取頭
130‧‧‧輸送帶
135‧‧‧輸送帶
145‧‧‧處理區
147‧‧‧植入光束
170‧‧‧光罩

Claims (20)

  1. 一基板處理系統，包括：一處理腔，用以定義一處理區；一第一吸盤陣列，耦合至一位在第一側上之第一傳輸裝置，其中該第一吸盤陣列設成可於第一傳輸裝置上線性來回移動；一第二吸盤陣列，耦合至一位在第二側上(第一側相反位置)之第二傳輸裝置，其中該第二吸盤陣列設成可於第二傳輸裝置上線性來回移動；且其中該第一及第二傳輸裝置各設成可升降移動，而使第一及第二吸盤陣列其中之一能自另一吸盤陣列下方通過。
  2. 如申請專利範圍第1項所示之系統，另包括一裝載裝置，用以裝載基板於第一及第二吸盤陣列上。
  3. 如申請專利範圍第2項所示之系統，另包括卸載裝置，用以卸載基板於第一及第二吸盤陣列上。
  4. 如申請專利範圍第2項所示之系統，其中該裝載裝置另包括對準裝置。
  5. 如申請專利範圍第4項所示之系統，其中該第一及第二吸盤陣列各包括複數靜電吸盤。
  6. 如申請專利範圍第5項所示之系統，其中該第一及第二吸盤陣列各包括複數列之靜電吸盤。
  7. 如申請專利範圍第4項所示之系統，其中該第一及第二吸盤陣列各設成，當橫越處理區時以第一速度移動，而當移動至處理區外時，則以第二速度移動，第二速度較第一速度為快。
  8. 如申請專利範圍第5項所示之系統，其中該裝載裝置包括複數靜電吸盤，用以自晶圓正面吸附晶圓。
  9. 如申請專利範圍第8項所示之系統，其中該裝載裝置包括定位棘爪，建置用以將晶圓推壓向固定對準銷。
  10. 如申請專利範圍第9項所示之系統，另包括一對準用照相機。
  11. 一晶圓處理系統，包括：一真空包覆；一處理腔，連接至該真空包覆，並於真空包覆內定義一處理區；一第一軌道組件，位在真空包覆內，該處理腔之一側；一第一升降裝置，耦合該第一軌道組件，用以將第一軌道組件升至上方位置並將第一升降組件降至下方位置；一第二軌道組件，位在真空包覆內，第一軌道組件之相對側；一第二升降裝置，耦合該第二軌道組件，用於將第二軌道組件升至上方位置並將第二升降組件降至下方位置；一第一吸盤組件，位在第一軌道組件上且移動於其上；及一第二吸盤組件，位在第二軌道組件上且移動於其上。
  12. 如申請專利範圍第11項所示之系統，另包括一晶圓傳送裝置，位在真空包覆內，及一晶圓移除裝置，位在真空組件之一側。
  13. 如申請專利範圍第12項所示之系統，另包括一第一取放組件，用以自晶圓傳送裝置傳輸晶圓至第一與第二吸盤組件，及一第二取放組件，用以自第一與第二吸盤組件傳輸晶圓至晶圓移除裝置。
  14. 如申請專利範圍第13項所示之系統，其中該晶圓傳送裝置包括一第一輸送帶，且該晶圓移除裝置包括一第二輸送帶。
  15. 如申請專利範圍第14項所示之系統，其中該取放組件包括具有複數拾取吸盤之拾取頭，設成可同時吸取複數之晶圓。
  16. 如申請專利範圍第15項所示之系統，其中各吸盤組件包括複數靜電吸盤。
  17. 如申請專利範圍第16項所示之系統，其中該取放組件另包括一致動器，用以對準晶圓至複數吸盤。
  18. 如申請專利範圍第17項所示之系統，其中各吸盤組件包括複數之對準銷，用以藉由將晶圓推近對準銷以對準晶圓。
  19. 在具有一裝載區、一傳輸區、一卸載區及一處理區之系統中使用之晶圓處理方法，包括：裝載複數晶圓至裝載區之吸盤陣列上；以第一速度傳輸該吸盤陣列至處理區，而一旦到達處理區後則以第二速度傳輸該吸盤陣列，第二速度較第一速度慢；在處理區傳輸時處理該晶圓；一旦通過處理區，以第一速度向卸載區傳輸吸盤陣列，並於卸載區卸載晶圓；一旦晶圓已經卸載，降低該吸盤陣列並以第一速度退回裝載區。
  20. 如申請專利範圍第19項所示之方法，其中裝載該複數晶圓之步驟包括：激活一拾取頭以拾取複數晶圓；移動該拾取頭，將複數晶圓置於吸盤陣列上；激活氣流進入吸盤陣列中，以產生氣體緩衝；激活拾取頭，將複數晶圓置於氣體緩衝上；對準複數晶圓；終止氣流並吸附晶圓至吸盤陣列。
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WO2013070978A4 (en) 2013-09-26
WO2013070978A3 (en) 2013-08-08
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JP2017085136A (ja) 2017-05-18
US9324598B2 (en) 2016-04-26
EP2777069A2 (en) 2014-09-17
EP2777069A4 (en) 2015-01-14
US20160233122A1 (en) 2016-08-11
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US9875922B2 (en) 2018-01-23
WO2013070978A2 (en) 2013-05-16
TWI506719B (zh) 2015-11-01
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JP6352376B2 (ja) 2018-07-04
CN104428883B (zh) 2017-02-22
KR20140110851A (ko) 2014-09-17
HK1207203A1 (zh) 2016-01-22
US20130115764A1 (en) 2013-05-09
MY175007A (en) 2020-06-02

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