JP5496473B2 - 裏面電極型太陽電池、太陽電池ストリングおよび太陽電池モジュール - Google Patents
裏面電極型太陽電池、太陽電池ストリングおよび太陽電池モジュール Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Description
図1(a)に本発明の裏面電極型太陽電池の一例の裏面の模式的な平面図を示し、図1(b)に図1(a)のIb−Ibに沿った模式的な断面を示す。
図2(a)に本発明の裏面電極型太陽電池の他の一例の裏面の模式的な平面図を示し、図2(b)に図2(a)のIIb−IIbに沿った模式的な断面を示す。
図3に、本発明の裏面電極型太陽電池の他の一例の裏面の模式的な平面図を示す。本実施の形態の裏面電極型太陽電池においては、第2導電型の半導体基板7を用いており、その第2導電型の半導体基板7の裏面の端部近傍領域内に第1導電型不純物を含む第1導電型の電極非形成領域6が島状に複数形成されている点に特徴がある。なお、電極非形成領域6の表面上には電極が形成されないことが好ましい。また、第2導電型の半導体基板7の裏面には、第1導電型不純物を含む櫛形状の第1導電型の第1の電極形成領域3と、半導体基板7よりも高濃度の第2導電型不純物を含む櫛形状の第2導電型の第2の電極形成領域2とが形成されており、第1の電極形成領域3上には第1導電型用電極5が形成され、第2の電極形成領域2上には第2導電型用電極4が形成されている。
図4に、本発明の裏面電極型太陽電池の他の一例の裏面の模式的な平面図を示す。本実施の形態の裏面電極型太陽電池においては、電極非形成領域6の形状が島状ではなく、帯状となっている点に特徴がある。
図11(a)に本発明の裏面電極型太陽電池の他の一例の裏面の模式的な平面図を示し、図11(b)に図11(a)のXIb−XIbに沿った模式的な断面を示す。
図12(a)に本発明の裏面電極型太陽電池の他の一例の裏面の模式的な平面図を示し、図12(b)に図12(a)のXIIb−XIIbに沿った模式的な断面を示す。
以下、図5〜図9を参照して、図2(a)および図2(b)に示す構成を有する本発明の裏面電極型太陽電池の複数を電気的に接続して形成した本発明の太陽電池ストリングの一例およびその太陽電池ストリングを封止材で封止することにより形成した本発明の太陽電池モジュールの一例について説明する。
Claims (6)
- 第1導電型の半導体基板(1)の裏面に、前記半導体基板(1)よりも高濃度の第1導電型不純物を含む第1導電型不純物含有層(3,6)と、第2導電型不純物を含む第2導電型不純物含有層(2)と、前記第1導電型不純物含有層(3)上の第1導電型用電極(5)と、前記第2導電型不純物含有層(2)上の第2導電型用電極(4)とを備え、
前記第1導電型不純物含有層(3,6)のうち前記第1導電型用電極(5)が前記第1導電型不純物含有層(3,6)に電気的に接続されている箇所(3)と、前記第1導電型不純物含有層(3,6)のうち前記第1導電型用電極(5)が前記第1導電型不純物含有層(3,6)に電気的に接続されていない箇所(6)とが離れて形成されており、
前記第1導電型不純物含有層(3,6)のうち前記第1導電型用電極(5)が前記第1導電型不純物含有層(3,6)に電気的に接続されていない前記箇所(6)は、前記第2導電型不純物含有層(2)と接し、前記半導体基板(1)の前記裏面の端部近傍領域内に形成されている、裏面電極型太陽電池。 - 前記第1導電型不純物含有層(3,6)のうち前記第1導電型用電極(5)が前記第1導電型不純物含有層(3,6)に電気的に接続されていない箇所(6)を複数備えていることを特徴とする、請求項1に記載の裏面電極型太陽電池。
- 請求項1または2に記載の裏面電極型太陽電池の複数と、
絶縁性基材(8)と前記絶縁性基材(8)の表面上に形成された配線(9)とを有する配線基板(10)とを含み、
前記裏面電極型太陽電池の電極(4,5)が前記配線基板(10)の配線(9)上に設置されるように前記裏面電極型太陽電池の複数を前記配線基板(10)上に配列することによって前記裏面電極型太陽電池の複数が電気的に接続されている、太陽電池ストリング。 - 請求項3に記載の太陽電池ストリングと、前記太陽電池ストリングを封止する封止材(11)とを備えた、太陽電池モジュール。
- 前記封止材(11)は、エチレンビニルアセテート樹脂、エポキシ樹脂、アクリル樹脂、ウレタン樹脂、オレフィン系樹脂、ポリエステル樹脂、シリコーン樹脂、ポリスチレン樹脂、ポリカーボネート樹脂およびゴム系樹脂からなる群から選択された少なくとも1種の透明樹脂を含むことを特徴とする、請求項4に記載の太陽電池モジュール。
- 前記裏面電極型太陽電池の電極(4,5)と前記配線基板(10)の配線(9)とが直接接触していることを特徴とする、請求項4または5に記載の太陽電池モジュール。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2008148255A JP5496473B2 (ja) | 2008-06-05 | 2008-06-05 | 裏面電極型太陽電池、太陽電池ストリングおよび太陽電池モジュール |
PCT/JP2009/055909 WO2009147890A1 (ja) | 2008-06-05 | 2009-03-25 | 裏面電極型太陽電池、太陽電池ストリングおよび太陽電池モジュール |
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JP2008148255A JP5496473B2 (ja) | 2008-06-05 | 2008-06-05 | 裏面電極型太陽電池、太陽電池ストリングおよび太陽電池モジュール |
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JP2013239163A Division JP5722413B2 (ja) | 2013-11-19 | 2013-11-19 | 裏面電極型太陽電池、太陽電池ストリングおよび太陽電池モジュール |
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JP2009295809A JP2009295809A (ja) | 2009-12-17 |
JP5496473B2 true JP5496473B2 (ja) | 2014-05-21 |
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Families Citing this family (10)
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KR20120104431A (ko) * | 2010-01-22 | 2012-09-20 | 샤프 가부시키가이샤 | 이면 전극형 태양전지 셀, 배선 시트, 배선 시트를 가진 태양전지 셀, 태양전지 모듈 및 배선 시트를 가진 태양전지 셀의 제조방법 |
JP2011165837A (ja) * | 2010-02-09 | 2011-08-25 | Sharp Corp | 太陽電池ストリング、太陽電池モジュールおよび太陽電池セル |
AT12058U1 (de) * | 2010-04-27 | 2011-09-15 | Austria Tech & System Tech | Verfahren zum kontaktieren eines photovoltaischen moduls mit einem anschlussgehäuse sowie system bestehend aus einem photovoltaischen modul und einem anschlussgehäuse |
KR101642158B1 (ko) | 2011-01-04 | 2016-07-22 | 엘지전자 주식회사 | 태양 전지 모듈 |
KR101254564B1 (ko) | 2011-05-18 | 2013-04-19 | 엘지전자 주식회사 | 태양 전지 모듈 |
CN103426940B (zh) * | 2013-03-22 | 2016-08-10 | 连云港神舟新能源有限公司 | 一种交错背接触ibc太阳能电池片电极结构 |
JP2016082109A (ja) * | 2014-10-20 | 2016-05-16 | シャープ株式会社 | 配線シート付き太陽電池セル及び太陽電池モジュール |
WO2017168977A1 (ja) * | 2016-03-29 | 2017-10-05 | パナソニックIpマネジメント株式会社 | 太陽電池 |
JP6971318B2 (ja) * | 2017-07-18 | 2021-11-24 | シャープ株式会社 | 光電変換装置 |
CN114649443B (zh) * | 2022-03-03 | 2024-04-16 | 浙江爱旭太阳能科技有限公司 | 背接触太阳能电池串及其制备方法、电池组件及光伏系统 |
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JP2837296B2 (ja) * | 1991-10-17 | 1998-12-14 | シャープ株式会社 | 太陽電池 |
JP3332699B2 (ja) * | 1995-11-24 | 2002-10-07 | 三洋電機株式会社 | 太陽電池の製造方法 |
JP2004071763A (ja) * | 2002-08-05 | 2004-03-04 | Toyota Motor Corp | 光起電力素子 |
US7388147B2 (en) * | 2003-04-10 | 2008-06-17 | Sunpower Corporation | Metal contact structure for solar cell and method of manufacture |
JP4334455B2 (ja) * | 2004-10-22 | 2009-09-30 | シャープ株式会社 | 太陽電池モジュール |
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