DE69232390T2 - Sonnenzelle - Google Patents

Sonnenzelle

Info

Publication number
DE69232390T2
DE69232390T2 DE69232390T DE69232390T DE69232390T2 DE 69232390 T2 DE69232390 T2 DE 69232390T2 DE 69232390 T DE69232390 T DE 69232390T DE 69232390 T DE69232390 T DE 69232390T DE 69232390 T2 DE69232390 T2 DE 69232390T2
Authority
DE
Germany
Prior art keywords
solar cell
solar
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69232390T
Other languages
English (en)
Other versions
DE69232390D1 (de
Inventor
Nobuyoshi Takehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69232390D1 publication Critical patent/DE69232390D1/de
Publication of DE69232390T2 publication Critical patent/DE69232390T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
DE69232390T 1991-10-18 1992-10-15 Sonnenzelle Expired - Fee Related DE69232390T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27103391A JP3156973B2 (ja) 1991-10-18 1991-10-18 太陽電池

Publications (2)

Publication Number Publication Date
DE69232390D1 DE69232390D1 (de) 2002-03-14
DE69232390T2 true DE69232390T2 (de) 2002-07-11

Family

ID=17494470

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69232390T Expired - Fee Related DE69232390T2 (de) 1991-10-18 1992-10-15 Sonnenzelle

Country Status (5)

Country Link
US (2) US5318638A (de)
EP (1) EP0537730B1 (de)
JP (1) JP3156973B2 (de)
AU (1) AU647675B2 (de)
DE (1) DE69232390T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4357164A (en) * 1979-12-11 1982-11-02 Sakata Shokai, Ltd. Ink composition for waterless lithography and methods of printing therefrom
JP2938634B2 (ja) * 1991-10-08 1999-08-23 キヤノン株式会社 太陽電池モジュール
US5340409A (en) * 1992-04-23 1994-08-23 Canon Kabushiki Kaisha Photovoltaic element and method for forming the same
US5428249A (en) * 1992-07-15 1995-06-27 Canon Kabushiki Kaisha Photovoltaic device with improved collector electrode
US20030148024A1 (en) * 2001-10-05 2003-08-07 Kodas Toivo T. Low viscosity precursor compositons and methods for the depositon of conductive electronic features
US6951666B2 (en) * 2001-10-05 2005-10-04 Cabot Corporation Precursor compositions for the deposition of electrically conductive features
US20030108664A1 (en) * 2001-10-05 2003-06-12 Kodas Toivo T. Methods and compositions for the formation of recessed electrical features on a substrate
US7732002B2 (en) * 2001-10-19 2010-06-08 Cabot Corporation Method for the fabrication of conductive electronic features
JP2005175160A (ja) * 2003-12-10 2005-06-30 Sanyo Electric Co Ltd 光起電力装置
WO2007149885A2 (en) * 2006-06-19 2007-12-27 Cabot Corporation Security features and processes for forming same
US20090266398A1 (en) * 2008-04-28 2009-10-29 Burak Metin Method and Apparatus to Form Back Contacts to Flexible CIGS Solar Cells
US8207012B2 (en) * 2008-04-28 2012-06-26 Solopower, Inc. Method and apparatus for achieving low resistance contact to a metal based thin film solar cell
US20090266399A1 (en) * 2008-04-28 2009-10-29 Basol Bulent M Metallic foil substrate and packaging technique for thin film solar cells and modules
US20100180940A1 (en) * 2009-01-20 2010-07-22 Weihong Cui Photovoltaic Module With Stabilized Polymer
CN103430318A (zh) * 2011-03-17 2013-12-04 三洋电机株式会社 太阳能电池和太阳能电池组件
US20130240009A1 (en) * 2012-03-18 2013-09-19 The Boeing Company Metal Dendrite-free Solar Cell
WO2013140622A1 (ja) * 2012-03-23 2013-09-26 三洋電機株式会社 太陽電池モジュール
US20130263921A1 (en) * 2012-04-10 2013-10-10 Lauren Plavisch Electronic Device and Corrosion Resistant Electrode Stack Therein
KR101791141B1 (ko) * 2015-12-02 2017-10-27 주식회사 페어그린 접이식 받침대

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4084985A (en) * 1977-04-25 1978-04-18 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method for producing solar energy panels by automation
JPS59167056A (ja) * 1983-03-12 1984-09-20 Agency Of Ind Science & Technol シリコン半導体電極
JPS59167057A (ja) * 1983-03-12 1984-09-20 Agency Of Ind Science & Technol シリコン半導体電極
JPS59168669A (ja) * 1983-03-16 1984-09-22 Hitachi Ltd 電極用ペースト材料
JPS63185071A (ja) * 1987-01-27 1988-07-30 Matsushita Electric Ind Co Ltd 非晶質太陽電池
JPS6457762A (en) * 1987-08-28 1989-03-06 Kyocera Corp Photoelectric converting device
JPH0658968B2 (ja) * 1987-11-09 1994-08-03 富士電機株式会社 薄膜太陽電池の製造方法
US4968354A (en) * 1987-11-09 1990-11-06 Fuji Electric Co., Ltd. Thin film solar cell array
JPH01149484A (ja) * 1987-12-04 1989-06-12 Sanyo Electric Co Ltd 光起電力装置
DE3804831C1 (en) * 1988-02-17 1989-07-20 Degussa Ag, 6000 Frankfurt, De Electroconductive coating composition for the contacting of solar cells
JP2698401B2 (ja) * 1988-10-26 1998-01-19 富士電機株式会社 薄膜光電変換素子
JPH02298079A (ja) * 1989-05-12 1990-12-10 Fuji Electric Co Ltd 薄膜太陽電池の製造方法
JPH0338069A (ja) * 1989-07-04 1991-02-19 Fuji Electric Co Ltd 薄膜太陽電池

Also Published As

Publication number Publication date
JP3156973B2 (ja) 2001-04-16
EP0537730A3 (en) 1993-10-06
JPH05110124A (ja) 1993-04-30
AU647675B2 (en) 1994-03-24
DE69232390D1 (de) 2002-03-14
EP0537730B1 (de) 2002-01-30
EP0537730A2 (de) 1993-04-21
AU2709892A (en) 1993-04-22
US5393695A (en) 1995-02-28
US5318638A (en) 1994-06-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee