DE3804831C1 - Electroconductive coating composition for the contacting of solar cells - Google Patents
Electroconductive coating composition for the contacting of solar cellsInfo
- Publication number
- DE3804831C1 DE3804831C1 DE3804831A DE3804831A DE3804831C1 DE 3804831 C1 DE3804831 C1 DE 3804831C1 DE 3804831 A DE3804831 A DE 3804831A DE 3804831 A DE3804831 A DE 3804831A DE 3804831 C1 DE3804831 C1 DE 3804831C1
- Authority
- DE
- Germany
- Prior art keywords
- weight
- electrically conductive
- solar cells
- contacting
- conductive lacquer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000008199 coating composition Substances 0.000 title 1
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 16
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000007650 screen-printing Methods 0.000 claims abstract description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 7
- 229920006230 thermoplastic polyester resin Polymers 0.000 claims abstract description 4
- 239000003960 organic solvent Substances 0.000 claims abstract description 3
- 239000004922 lacquer Substances 0.000 claims description 11
- -1 glycol ethers Chemical class 0.000 claims description 9
- 125000003118 aryl group Chemical group 0.000 claims description 3
- 229930195733 hydrocarbon Natural products 0.000 claims description 3
- 150000002430 hydrocarbons Chemical class 0.000 claims description 3
- 150000005846 sugar alcohols Polymers 0.000 claims description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims 1
- 239000000203 mixture Substances 0.000 abstract description 4
- 229910052709 silver Inorganic materials 0.000 abstract description 3
- 239000004332 silver Substances 0.000 abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- 239000004411 aluminium Substances 0.000 abstract 1
- 239000012799 electrically-conductive coating Substances 0.000 abstract 1
- 239000002966 varnish Substances 0.000 description 6
- 239000003973 paint Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229920001225 polyester resin Polymers 0.000 description 4
- 239000004645 polyester resin Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000005338 heat storage Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 238000004378 air conditioning Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D167/00—Coating compositions based on polyesters obtained by reactions forming a carboxylic ester link in the main chain; Coating compositions based on derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/24—Electrically-conducting paints
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
Die Erfindung betrifft einen elektrisch leitfähigen Lack zur Kontaktierung von Solarzellen aus amorphem Silizium bei Temperaturen unterhalb 200°C im Siebdruckverfahren.The invention relates to an electrically conductive Varnish for contacting amorphous solar cells Silicon at temperatures below 200 ° C in Screen printing process.
Die Photovoltaik, das heißt die direkte Umwandlung von Sonnenlicht in elektrischen Strom, stellt eine neue, regenerative Energiequelle dar, die aufgrund ihrer Umweltfreundlichkeit eine große Bedeutung für die Energieversorgung der Zukunft gewinnen wird.Photovoltaics, that is, the direct conversion of Sunlight in electric current, represents a new, is a regenerative energy source, due to its Environmental friendliness is of great importance to the Energy supply of the future will win.
Zur Energiegewinnung aus Sonnenlicht werden Solarzellen bzw. Solarmodule benötigt, die aus halbleitendem Material (meist Silicium) aufgebaut sind. Solche Solarzellen werden beispielsweise in der DE-OS 32 09 548 und in der US-PS 45 17 403 beschrieben.Be used to generate energy from sunlight Solar cells or solar modules are needed semiconducting material (mostly silicon) are. Such solar cells are used, for example, in the DE-OS 32 09 548 and in US-PS 45 17 403 described.
Im wesentlichen gibt es in der Photovoltaik zwei Zellentypen, die zukünftig von Bedeutung sein werden. Zum einem die Solarzellen auf der Basis von kristallinem Silicium ("C-Si") und zum anderen diejenigen, die aus amorphen Siliciumschichten ("a-Si : H") aufgebaut sind. Insbesondere diese amorphen Siliciumsolarzellen bieten das größte Potential für die Erzeugung von billigem Solarstrom.There are essentially two in photovoltaics Cell types that will be important in the future. Firstly, the solar cells based on crystalline silicon ("C-Si") and the other those made from amorphous silicon layers ("a-Si: H") are constructed. In particular, these amorphous Silicon solar cells offer the greatest potential for the generation of cheap solar power.
Ein- bzw. polykristalline Siliciumsolarzellen können aufgrund der Materialeigenschaften des Rohsiliciums bei Temperaturen von 600-800°C zur Ableitung des erzeugten Stroms kontaktiert werden. Single or polycrystalline silicon solar cells can due to the material properties of the raw silicon at temperatures of 600-800 ° C to derive the generated electricity can be contacted.
Die entsprechenden Siebdruckpasten enthalten Silberpulver, Gläser und organische Bindemittel. Solche Produkte sind beispielsweise in der Patentschrift US-PS 42 35 644 beschrieben.The corresponding screen printing pastes included Silver powder, glasses and organic binders. Such products are for example in the U.S. Patent 4,235,644.
Für Solarzellen aus amorphem Silicium ("a-Si : H") können zur Kontaktierung nur solche Siebdruckpräparate zum Einsatz kommen, die bei Temperaturen unter 200°C getrocknet bzw. gehärtet werden können. Der Grund hierfür ist die Zusammensetzung der amorphen photoaktiven Schichten, die neben Silicium auch noch Wasserstoff enthalten. Bei Temperaturen oberhalb 200°C tritt ein Wasserstoffverlust (Dehydrogenation) ein, der zur Degradation der amorphen Siliciumsolarzelle führt.For solar cells made of amorphous silicon ("a-Si: H") only such screen printing preparations can be used for contacting are used at temperatures below 200 ° C can be dried or hardened. The reason this is the composition of the amorphous photoactive layers that besides silicon also Contain hydrogen. At temperatures above 200 ° C there is a loss of hydrogen (dehydrogenation), for the degradation of the amorphous silicon solar cell leads.
In den "Proceedings 19th IEEE Photovoltaic Spec. Conference, New Orleans, 1987" wird von K. Baert u. a. über Versuche zur Kontaktierung von Solarzellen aus amorphem Silicium unter Verwendung von elektrisch leitenden Lacken berichtet. Die verwendeten Lacke zeigen jedoch schlechte Siebdruckeigenschaften, geringe Langzeitstabilität sowie zu hohe Übergangswiderstände. Normale Leitlacke auf der Basis Silberpulver, polymeres Harz und Lösungsmittel werden als für die Kontaktierung von Solarzellen aus amorphem Silicium ungeeignet beschrieben.In the "Proceedings 19th IEEE Photovoltaic Spec. Conference, New Orleans, 1987 "by K. Baert u. a. about attempts to contact solar cells made of amorphous silicon using electrical conductive paints reported. The paints used but show poor screen printing properties, low long-term stability and too high Contact resistance. Normal base coats Silver powder, polymeric resin and solvent than for contacting solar cells from amorphous Silicon unsuitably described.
Es war daher Aufgabe der vorliegenden Erfindung, einen elektrisch leitfähigen Lack zur Kontaktierung von Solarzellen aus amorphem Silicium bei Temperaturen unterhalb 200°C im Siebdruckverfahren zu finden, der gute Siebdruckeigenschaften und Langzeitstabilität aufweist und einen geringen Übergangswiderstand zeigt. It was therefore an object of the present invention, one electrically conductive lacquer for contacting Amorphous silicon solar cells at temperatures to be found below 200 ° C in the screen printing process, the good screen printing properties and long-term stability and has a low contact resistance.
Diese Aufgabe wird erfindungsgemäß dadurch gelöst, daß der Lack aus 50 bis 75 Gew.-% Silberpulver mit 0 bis 50 Gew.-% Aluminiumpulver, 5 bis 15 Gew.-% eines thermoplastischen Polyesterharzes mit einem Molekulargewicht von 10 000 bis 40 000 und 10 bis 45 Gew.-% eines organischen Lösungsmittels in Form von Kohlenwasserstoffen, Glycloethern und Glycoletheracetaten besteht.This object is achieved in that the paint from 50 to 75 wt .-% silver powder with 0 to 50 wt .-% aluminum powder, 5 to 15 wt .-% one thermoplastic polyester resin with a Molecular weight of 10,000 to 40,000 and 10 to 45 % By weight of an organic solvent in the form of Hydrocarbons, glycloethers and Glycol ether acetates exist.
Vorzugsweise verwendet man ein Silberpulver, das 1 bis 50 Gew.-% Aluminiumpulver enthält. Weiterhin ist es von Vorteil, wenn das Silberpulver plättchenförmig ist und eine Klopfdichte von 1,5 bis 5 g/cm3 aufweist und das eingesetzte Aluminiumpulver eine Korngröße von weniger als 45 µm besitzt.A silver powder which contains 1 to 50% by weight of aluminum powder is preferably used. It is also advantageous if the silver powder is platelet-shaped and has a tap density of 1.5 to 5 g / cm 3 and the aluminum powder used has a grain size of less than 45 μm.
Außerdem ist es günstig, ein thermoplastisches Polyesterharz zu verwenden, das aus aromatischen oder aliphatischen Dicarbonsäuren besteht, die mit mehrwertigen Alkoholen polykondensiert sind.It is also convenient to use a thermoplastic To use polyester resin that is aromatic or aliphatic dicarboxylic acids consisting of polyhydric alcohols are polycondensed.
Dieser Lack wird im Siebdruckverfahren auf die Solarzelle in einem geeigneten Muster aufgebracht. Anschließend wird diese Anordnung bei Temperaturen unterhalb 200°C getrocknet.This varnish is screen printed on the Solar cell applied in a suitable pattern. Then this arrangement at temperatures dried below 200 ° C.
Hinsichtlich des im Leitlack verwendeten Silberpulvers haben sich plättchenförmige Partikel (sogenannte "flakes") als besonders geeignet erwiesen, jedoch können auch Gemische aus plättchenförmigen und kugeligen Silberpulvern verwendet werden.With regard to the silver powder used in the conductive varnish have platelet-shaped particles (so-called "flakes") proved to be particularly suitable, however can also be mixtures of platelet-shaped and spherical silver powders can be used.
Als Aluminiumpulver kommt bevorzugt Pulvermaterial der Korngröße kleiner 45 µm, vorteilhafterweise kleiner 20 µm zum Einsatz. The preferred powder material is aluminum powder Grain size less than 45 microns, advantageously smaller 20 µm used.
Das eingesetzte Polyesterharz kann ein lineares aber auch verzweigtes Harz des Molekulargewichtes 10 000- 40 000 sein. Polyestertypen, die aus aromatischen und aliphatischen Dicarbonsäuren aufgebaut sind, können verwendet werden.The polyester resin used can be linear also branched resin of molecular weight 10,000 Be 40,000. Types of polyester made from aromatic and aliphatic dicarboxylic acids can be built up be used.
Als Lösungsmittel kommen hochsiedende Verbindungen aus der Klasse der Kohlenwasserstoffe (z. B. Testbenzin) oder aber aus der Klasse der Glykolether oder Glykoletheracetate (z. B. Butyldiglycol, Ethylglykolacetat, Ethyldiglykolacetat) zum Einsatz.High-boiling compounds are used as solvents the class of hydrocarbons (e.g. white spirit) or from the class of glycol ethers or Glycol ether acetates (e.g. butyl diglycol, Ethylglycolacetat, Ethyldiglykolacetat) are used.
Die erfindungsgemäßen elektrisch leitenden Lacke werden beispielsweise bei der Kontaktierung von sogenannten "Metall-nip-TCO-Zellen" verwendet, die aus einer flexiblen Metallfolie als Substrat, den amorphem Siliciumschichten in n- und p-dotierter Form (mit intrinischer Zwischenschicht) sowie einer flächigen, transparenten Elektrode (TCO-Schicht) bestehen. Auf diese TCO-Schicht wird der elektrisch leitfähige Lack im Siebdruckverfahren aufgebracht. Da diese Leiterbahnen zur Ableitung des Stromes aus der Zelle dienen, müssen sie zur Vermeidung von Verlusten einen sehr niederen Kontaktwiderstand zur transparenten leitfähigen Schicht (TCO-Schicht) aufweisen. Diese TCO-Schicht besteht in der Regel aus gesputtertem Indium/Zinnoxid oder aus Zinnoxid, das mit Fluor dotiert wurde. Geeignete TCO-Schichten weisen einen Flächenwiderstand von 10-500 Ω/Quadrat auf und haben Schichtdicken von 100-500 nm.The inventive electrically conductive paints are "nip TCO cells metal" is used, for example, in contacting the so-called, in n of a flexible metal foil as the substrate, the amorphous silicon layers - and p doped form (with intrinischer intermediate layer) and an areal , transparent electrode (TCO layer). The electrically conductive lacquer is applied to this TCO layer using the screen printing process. Since these conductor tracks are used to derive the current from the cell, they must have a very low contact resistance to the transparent conductive layer (TCO layer) to avoid losses. This TCO layer usually consists of sputtered indium / tin oxide or of tin oxide that has been doped with fluorine. Suitable TCO layers have a sheet resistance of 10-500 Ω / square and have layer thicknesses of 100-500 nm.
Natürlich kann der erfindungsgemäße Lack auch für Solarzellen einer anderen Aufbauweise zum Einsatz kommen. Dabei können insbesondere andere Schicht folgen aber auch andere Trägermaterialien Verwendung finden. Of course, the paint according to the invention can also be used for Another type of solar cell is used come. In particular, other layers but other carrier materials also follow Find.
Auch die transparenten leitfähigen Schichten (TCO-Schichten), auf die der Leitlack gedruckt wird, können andere Zusammensetzungen besitzen.Even the transparent conductive layers (TCO layers) on which the conductive lacquer is printed, can have other compositions.
Die Kontaktierung der Solarzelle aus amorphem Silicium kann sowohl auf der Frontseite als auch auf der Rückseite erfolgen. Dabei kann auch eine Verschaltung mehrerer amorpher Teilzellen zu einer sogenannten "integrierten" Solarzelle mit dem elektrisch leitenden Lack vorgenommen werden.Contacting the solar cell from amorphous silicon can be on the front as well as on the Back. An interconnection can also be used several amorphous sub-cells to a so-called "integrated" solar cell with the electrically conductive Lacquer can be made.
Die folgenden Beispiele sollen die Erfindung näher erläutern:The following examples are intended to illustrate the invention explain:
- 1. Man bereitet eine Harzlösung bestehend aus 40 Gew.-% Polyesterharz (Dynapol S 1315) und 60 Gew.-% Ethyldiglycolacetat. 21 Gew.-% dieser Lösung werden mit 65 Gew.-% eines plättchenförmigen Silberpulvers der Klopfdichte 3,5 g/cm3 vermengt und 14 Gew.-% Ethyldiglycolacetat als Lösungsmittel zugegeben. Aus diesen Komponenten wird ein Leitlack hergestellt, dessen Flächenwiderstand 42 m Ω/Quadrat (bezogen auf 10 µm Schichtdicke) beträgt.1. A resin solution consisting of 40% by weight of polyester resin (Dynapol S 1315) and 60% by weight of ethyl diglycol acetate is prepared. 21% by weight of this solution are mixed with 65% by weight of a platelet-shaped silver powder with a tap density of 3.5 g / cm 3 and 14% by weight of ethyl diglycol acetate are added as a solvent. A conductive varnish is produced from these components, the surface resistance of which is 42 mΩ / square (based on a layer thickness of 10 µm).
- Dieses Präparat wird auf die transparente leitfähige Schicht einer amorphen Silicium-Solarzelle im Siebdruckverfahren aufgebracht. Die TCO-Schicht besteht aus Fluor-dotiertem Zinndioxid der Flächenleitfähigkeit 25 Ω/Quadrat. Man trocknet die Anordnung bei 150°C während 60 Min. Die resultierenden getrockneten Leiterbahnen weisen eine sehr gute Haftung auf der TCO-Schicht der Zellen auf. Der Kontaktwiderstand (Leitlack/TCO) gemessen nach der 4-Leiter-Methode liegt im Milliohmbereich ( < 50 m Ω cm2). This preparation is applied to the transparent conductive layer of an amorphous silicon solar cell using the screen printing process. The TCO layer consists of fluorine-doped tin dioxide with a surface conductivity of 25 Ω / square. The arrangement is dried at 150 ° C. for 60 minutes. The resulting dried conductor tracks have very good adhesion to the TCO layer of the cells. The contact resistance (conductive lacquer / TCO) measured according to the 4-wire method is in the milliohm range (<50 m Ω cm 2 ).
- Man erhält keine Verschlechterung der Haftfestigkeit sowie der elektrischen Eigenschaften bei der trockenen Wärmelagerung (150°C, 1000 h) sowie bei der Klimalagerung (40°C/93% rel. Feuchtigkeit) der Anordnung.You get no deterioration in the Adhesion and electrical properties with dry heat storage (150 ° C, 1000 h) as well as in climate storage (40 ° C / 93% rel. humidity) Arrangement.
- 2. 20 Gew.-% Aluminiumpulver der Korngröße kleiner 20 µm und 45 Gew.-% plättchenförmiges Silberpulver der Klopfdichte 3,5 g/cm3 werden mit 21 Gew.-% der im Beispiel 1 bereiteten Harzlösung vermengt. Anschließend werden 14 Gew.-% Ethyldiglycolacetat zugegeben und ein Silber/Aluminiumleitlack hergestellt. Der Flächenwiderstand des Produktes liegt bei 600 m Ω/Quadrat, bezogen auf 10 µm Schichtdicke. Das Präparat wird, wie im Beispiel 1 beschrieben, zur Kontaktierung von a-Si-Solarzellen verwendet.2. 20% by weight of aluminum powder with a grain size of less than 20 μm and 45% by weight of platelet-shaped silver powder with a tap density of 3.5 g / cm 3 are mixed with 21% by weight of the resin solution prepared in Example 1. 14% by weight of ethyl diglycol acetate are then added and a silver / aluminum conductive lacquer is produced. The surface resistance of the product is 600 m Ω / square, based on a layer thickness of 10 µm. As described in Example 1, the preparation is used for contacting a-Si solar cells.
- Die resultierenden Leiterbahnen weisen ebenfalls eine sehr gute Haftung auf der TCO-Schicht auf. Der Kontaktwiderstand (TCO/Leitlack) liegt ebenfalls im Milliohmbereich. Bei der trockenen Wärmelagerung (150°C, 1000 h) sowie bei der Klimalagerung (40°C/93% rel. Feuchtigkeit) der Anordnung erhält man keine Verschlechterung der Haftung und der elektrischen Eigenschaften.The resulting traces also point very good adhesion to the TCO layer. The Contact resistance (TCO / conductive varnish) is also present in the milliohm range. With dry heat storage (150 ° C, 1000 h) as well as for air conditioning (40 ° C / 93% rel. Humidity) of the arrangement is not obtained Deterioration of liability and electrical Properties.
- 3. Man bereitet eine Harzlösung bestehend aus 40 Gew.-% Polyesterharz (Dynapol L 912) und 60 Gew.-% Solvesso 200. Von dieser Lösung werden 21 Gew.-% mit 75 Gew.-% eines plättchenförmigen Silberpulvers der Klopfdichte 3,0 g/cm3 vermengt und 4 Gew.-% Solvesso 200 zugegeben. 3. A resin solution consisting of 40% by weight of polyester resin (Dynapol L 912) and 60% by weight of Solvesso 200 is prepared. 21% by weight of this solution are mixed with 75% by weight of a platelet-shaped silver powder with a tap density of 3. 0 g / cm 3 mixed and 4 wt .-% Solvesso 200 added.
- Der so hergestellte Leitlack weist einen Flächenwiderstand von 100 m Ω/Quadrat auf (bezogen auf eine Schichtdicke von 10 µm).The conductive varnish produced in this way has one Surface resistance of 100 m Ω / square on (based on a Layer thickness of 10 µm).
- Das Präparat wird auf die transparente leitfähige Schicht einer amorphen Siliciumsolarzelle aufgebracht. Man trocknet bei 150°C für 30 Min. Die resultierenden Leiterbahnen weisen eine sehr gute Haftung auf der TCO-Schicht auf.The preparation is conductive on the transparent Layer of an amorphous silicon solar cell applied. The resulting are dried at 150 ° C. for 30 minutes Conductors have very good adhesion to the TCO layer on.
- Der Kontaktwiderstand (Leitlack/TCO) liegt im Milliohmbereich. Man erhält keine Verschlechterung der Haftfestigkeit sowie der elektrischen Eigenschaften bei der trockenen Wärmelagerung (150°C, 1000 h) sowie der Klimalagerung (40°C, 93% rel. Feuchtigkeit) der Anordnung.The contact resistance (conductive lacquer / TCO) is in the Milliohm range. You get no deterioration in the Adhesion and electrical properties with dry heat storage (150 ° C, 1000 h) as well the climate storage (40 ° C, 93% rel. humidity) of the arrangement.
Claims (4)
- 50-75 Gew.-% Silberpulver mit 0 bis 50 Gew.-% Aluminiumpulver,
- 5-15 Gew.-% eines thermoplastischen Polyesterharzes mit einem Molekulargewicht von 10 000 bis 40 000 und
- 10-45 Gew.-% eines organischen Lösungsmittels in Form von Kohlenwasserstoffen, Glycolethern und Glycoletheracetaten besteht.
- 50-75% by weight silver powder with 0 to 50% by weight aluminum powder,
- 5-15% by weight of a thermoplastic polyester resin with a molecular weight of 10,000 to 40,000 and
- 10-45 wt .-% of an organic solvent in the form of hydrocarbons, glycol ethers and glycol ether acetates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3804831A DE3804831C1 (en) | 1988-02-17 | 1988-02-17 | Electroconductive coating composition for the contacting of solar cells |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3804831A DE3804831C1 (en) | 1988-02-17 | 1988-02-17 | Electroconductive coating composition for the contacting of solar cells |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3804831C1 true DE3804831C1 (en) | 1989-07-20 |
Family
ID=6347537
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE3804831A Expired DE3804831C1 (en) | 1988-02-17 | 1988-02-17 | Electroconductive coating composition for the contacting of solar cells |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE3804831C1 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0537730A3 (en) * | 1991-10-18 | 1993-10-06 | Canon Kabushiki Kaisha | Solar cell |
| EP0567111A1 (en) * | 1992-04-23 | 1993-10-27 | Canon Kabushiki Kaisha | Electrode of a photovoltaic element and method for forming the same |
| EP0805616A1 (en) * | 1996-05-03 | 1997-11-05 | International Business Machines Corporation | Electrically conductive compositions |
| US5866044A (en) * | 1994-11-15 | 1999-02-02 | International Business Machines | Lead free conductive composites for electrical interconnections |
| WO2003045584A1 (en) * | 2001-11-27 | 2003-06-05 | Ferro Corporation | Hot melt conductor paste composition |
| DE102006021804A1 (en) * | 2006-05-09 | 2007-11-15 | International Solar Energy Research Center Konstanz E.V. | Solar cell module and method for the production of solar cell modules |
| US20130142963A1 (en) * | 2011-12-02 | 2013-06-06 | E.I. Du Pont De Nemours And Company | Conductive metal ink |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4235644A (en) * | 1979-08-31 | 1980-11-25 | E. I. Du Pont De Nemours And Company | Thick film silver metallizations for silicon solar cells |
| DE3209548A1 (en) * | 1982-03-16 | 1983-10-20 | Siemens AG, 1000 Berlin und 8000 München | Solar cell arrangement in thin-layer construction made from semiconductor material, and process for the fabrication thereof |
| US4517403A (en) * | 1983-05-16 | 1985-05-14 | Atlantic Richfield Company | Series connected solar cells and method of formation |
-
1988
- 1988-02-17 DE DE3804831A patent/DE3804831C1/en not_active Expired
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4235644A (en) * | 1979-08-31 | 1980-11-25 | E. I. Du Pont De Nemours And Company | Thick film silver metallizations for silicon solar cells |
| DE3209548A1 (en) * | 1982-03-16 | 1983-10-20 | Siemens AG, 1000 Berlin und 8000 München | Solar cell arrangement in thin-layer construction made from semiconductor material, and process for the fabrication thereof |
| US4517403A (en) * | 1983-05-16 | 1985-05-14 | Atlantic Richfield Company | Series connected solar cells and method of formation |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0537730A3 (en) * | 1991-10-18 | 1993-10-06 | Canon Kabushiki Kaisha | Solar cell |
| EP0567111A1 (en) * | 1992-04-23 | 1993-10-27 | Canon Kabushiki Kaisha | Electrode of a photovoltaic element and method for forming the same |
| US5866044A (en) * | 1994-11-15 | 1999-02-02 | International Business Machines | Lead free conductive composites for electrical interconnections |
| US6197222B1 (en) | 1994-11-15 | 2001-03-06 | International Business Machines Corporation | Lead free conductive composites for electrical interconnections |
| EP0805616A1 (en) * | 1996-05-03 | 1997-11-05 | International Business Machines Corporation | Electrically conductive compositions |
| WO2003045584A1 (en) * | 2001-11-27 | 2003-06-05 | Ferro Corporation | Hot melt conductor paste composition |
| AU2002342251B2 (en) * | 2001-11-27 | 2007-06-14 | Heraeus Precious Metals North America Conshohocken Llc | Hot melt conductor paste composition |
| KR100920763B1 (en) * | 2001-11-27 | 2009-10-07 | 페로 코포레이션 | Hot melt conductor paste composition |
| DE102006021804A1 (en) * | 2006-05-09 | 2007-11-15 | International Solar Energy Research Center Konstanz E.V. | Solar cell module and method for the production of solar cell modules |
| US20130142963A1 (en) * | 2011-12-02 | 2013-06-06 | E.I. Du Pont De Nemours And Company | Conductive metal ink |
| US9245664B2 (en) * | 2011-12-02 | 2016-01-26 | E I Du Pont De Nemours And Company | Conductive metal ink |
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