JP2005175160A - 光起電力装置 - Google Patents
光起電力装置 Download PDFInfo
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- JP2005175160A JP2005175160A JP2003412261A JP2003412261A JP2005175160A JP 2005175160 A JP2005175160 A JP 2005175160A JP 2003412261 A JP2003412261 A JP 2003412261A JP 2003412261 A JP2003412261 A JP 2003412261A JP 2005175160 A JP2005175160 A JP 2005175160A
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- 229910021417 amorphous silicon Inorganic materials 0.000 description 33
- 239000000758 substrate Substances 0.000 description 22
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- 239000005020 polyethylene terephthalate Substances 0.000 description 5
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- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 4
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 3
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- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
【解決手段】この光起電力装置は、0.5nm以上2nm以下の算術平均表面粗さ(Ra)を有するITO膜5および9と、ITO膜5および9の各々の上に形成され、銀と樹脂バインダとを含むペースト電極6および10とを含み、樹脂バインダは、60質量%以上100質量%以下のエポキシ樹脂を含有する、光起電力素子1を備えている。
【選択図】図1
Description
2 n型単結晶シリコン基板(結晶系半導体層)
3、7 i型非晶質シリコン層(非単結晶半導体層)
4 p型非晶質シリコン層
5、9 ITO膜(酸化物透明導電膜)
6 ペースト電極(第1ペースト電極)
8 n型非晶質シリコン層
10 ペースト電極(第2ペースト電極)
11 光起電力モジュール(光起電力装置)
12 タブ(電気配線)
13 充填材
14 表面保護材
15 裏面保護材
Claims (9)
- 2nm以下の算術平均表面粗さ(Ra)を有する酸化物透明導電膜と、前記酸化物透明導電膜上に形成され、少なくとも金属材料と樹脂材料とを含むペースト電極とを含み、前記樹脂材料は、60質量%以上100質量%以下のエポキシ樹脂を含有する、光起電力素子を備えた、光起電力装置。
- 前記光起電力素子は、第1導電型の結晶系半導体層と、前記結晶系半導体層上に形成された実質的に真性の非単結晶半導体層とを含み、
前記酸化物透明導電膜は、前記非単結晶半導体層上に形成されている、請求項1に記載の光起電力装置。 - 前記ペースト電極を構成する前記樹脂材料は、75質量%以上100質量%以下のエポキシ樹脂を含有する、請求項1または2に記載の光起電力装置。
- 前記酸化物透明導電膜は、0.5nm以上1nm以下の算術平均表面粗さ(Ra)を有する、請求項1〜3のいずれか1項に記載の光起電力装置。
- 前記酸化物透明導電膜は、SnO2を添加したIn2O3を含む、請求項1〜4のいずれか1項に記載の光起電力装置。
- 前記ペースト電極を構成する前記樹脂材料は、前記エポキシ樹脂に加えて、ウレタン樹脂を含む、請求項1〜5のいずれか1項に記載の光起電力装置。
- 前記酸化物透明導電膜の表面に対する水の接触角は、40°以上74°以下である、請求項1〜6のいずれか1項に記載の光起電力装置。
- 前記光起電力素子は、所定の間隔を隔てて複数設けられており、
前記ペースト電極は、前記光起電力素子の上面側に形成された第1ペースト電極と、前記光起電力素子の下面側に形成された第2ペースト電極とを含み、
所定の前記光起電力素子の上面側に形成された前記第1ペースト電極に一方端側が接続されるとともに、前記所定の光起電力素子に隣接する別の前記光起電力素子の下面側に形成された前記第2ペースト電極に他方端側が接続される電気配線をさらに備える、請求項1〜7のいずれか1項に記載の光起電力装置。 - 水に対する接触角が40°以上74°以下の表面を有する酸化物透明導電膜と、前記酸化物透明導電膜上に形成され、少なくとも金属材料と樹脂材料とを含むペースト電極とを含み、前記樹脂材料は、60質量%以上100質量%以下のエポキシ樹脂を含有する、光起電力素子を備えた、光起電力装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003412261A JP2005175160A (ja) | 2003-12-10 | 2003-12-10 | 光起電力装置 |
US10/807,190 US7947895B2 (en) | 2003-12-10 | 2004-03-24 | Photovoltaic device |
EP04251909.0A EP1542290B1 (en) | 2003-12-10 | 2004-03-30 | Photovoltaic device |
CNB2004100316316A CN100570901C (zh) | 2003-12-10 | 2004-03-31 | 光生伏打装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003412261A JP2005175160A (ja) | 2003-12-10 | 2003-12-10 | 光起電力装置 |
Publications (1)
Publication Number | Publication Date |
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JP2005175160A true JP2005175160A (ja) | 2005-06-30 |
Family
ID=34510527
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003412261A Pending JP2005175160A (ja) | 2003-12-10 | 2003-12-10 | 光起電力装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7947895B2 (ja) |
EP (1) | EP1542290B1 (ja) |
JP (1) | JP2005175160A (ja) |
CN (1) | CN100570901C (ja) |
Cited By (5)
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---|---|---|---|---|
JP2008205137A (ja) * | 2007-02-19 | 2008-09-04 | Sanyo Electric Co Ltd | 太陽電池及び太陽電池モジュール |
US7741558B2 (en) | 2006-07-20 | 2010-06-22 | Sanyo Electric Co., Ltd. | Solar cell module |
US7923627B2 (en) | 2006-03-17 | 2011-04-12 | Sanyo Electric Co., Ltd. | Photovoltaic element, photovoltaic module comprising photovoltaic element, and method of fabricating photovoltaic element |
JP2013008960A (ja) * | 2011-05-25 | 2013-01-10 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
CN113964228A (zh) * | 2021-02-08 | 2022-01-21 | 长沙壹纳光电材料有限公司 | 一种异质结太阳能电池及其制备方法和应用 |
Families Citing this family (14)
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ES2365904T3 (es) * | 2004-01-13 | 2011-10-13 | Sanyo Electric Co., Ltd. | Dispositivo fotovoltaico. |
TWI442583B (zh) * | 2006-11-28 | 2014-06-21 | Sanyo Electric Co | 太陽電池模組 |
JP2008135654A (ja) * | 2006-11-29 | 2008-06-12 | Sanyo Electric Co Ltd | 太陽電池モジュール |
US20100275996A1 (en) * | 2007-11-30 | 2010-11-04 | Kaneka Corporation | Silicon-based thin-film photoelectric conversion device |
US8076175B2 (en) * | 2008-02-25 | 2011-12-13 | Suniva, Inc. | Method for making solar cell having crystalline silicon P-N homojunction and amorphous silicon heterojunctions for surface passivation |
US20090211627A1 (en) * | 2008-02-25 | 2009-08-27 | Suniva, Inc. | Solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation |
US20090211623A1 (en) * | 2008-02-25 | 2009-08-27 | Suniva, Inc. | Solar module with solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation |
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JP2011176225A (ja) * | 2010-02-25 | 2011-09-08 | Seiko Epson Corp | 光学変換装置及び同装置を含む電子機器 |
US20120015474A1 (en) * | 2010-07-19 | 2012-01-19 | Yung-Chun Wu | Method for fabricating silicon heterojunction solar cells |
JP5824681B2 (ja) * | 2011-06-30 | 2015-11-25 | パナソニックIpマネジメント株式会社 | 光起電力装置 |
KR20130115825A (ko) * | 2012-04-13 | 2013-10-22 | 한국전자통신연구원 | 양방향 색구현 박막 실리콘 태양전지 |
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JP6592447B2 (ja) * | 2014-10-06 | 2019-10-16 | 株式会社カネカ | 太陽電池および太陽電池モジュール、ならびに太陽電池および太陽電池モジュールの製造方法 |
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2003
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-
2004
- 2004-03-24 US US10/807,190 patent/US7947895B2/en active Active
- 2004-03-30 EP EP04251909.0A patent/EP1542290B1/en not_active Expired - Lifetime
- 2004-03-31 CN CNB2004100316316A patent/CN100570901C/zh not_active Expired - Lifetime
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US7923627B2 (en) | 2006-03-17 | 2011-04-12 | Sanyo Electric Co., Ltd. | Photovoltaic element, photovoltaic module comprising photovoltaic element, and method of fabricating photovoltaic element |
US7741558B2 (en) | 2006-07-20 | 2010-06-22 | Sanyo Electric Co., Ltd. | Solar cell module |
JP2008205137A (ja) * | 2007-02-19 | 2008-09-04 | Sanyo Electric Co Ltd | 太陽電池及び太陽電池モジュール |
JP2013008960A (ja) * | 2011-05-25 | 2013-01-10 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
CN113964228A (zh) * | 2021-02-08 | 2022-01-21 | 长沙壹纳光电材料有限公司 | 一种异质结太阳能电池及其制备方法和应用 |
CN113964228B (zh) * | 2021-02-08 | 2023-09-26 | 长沙壹纳光电材料有限公司 | 一种异质结太阳能电池及其制备方法和应用 |
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EP1542290B1 (en) | 2015-02-25 |
US7947895B2 (en) | 2011-05-24 |
CN100570901C (zh) | 2009-12-16 |
US20050126625A1 (en) | 2005-06-16 |
EP1542290A1 (en) | 2005-06-15 |
CN1627541A (zh) | 2005-06-15 |
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