JP2013008960A - 光電変換装置 - Google Patents
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 75
- 239000004065 semiconductor Substances 0.000 claims abstract description 302
- 239000000758 substrate Substances 0.000 claims abstract description 119
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 106
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 268
- 229910052710 silicon Inorganic materials 0.000 claims description 268
- 239000010703 silicon Substances 0.000 claims description 268
- 230000001681 protective effect Effects 0.000 claims description 12
- 239000010410 layer Substances 0.000 description 240
- 229910021419 crystalline silicon Inorganic materials 0.000 description 24
- 239000012535 impurity Substances 0.000 description 23
- 229910021417 amorphous silicon Inorganic materials 0.000 description 21
- 238000000034 method Methods 0.000 description 17
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- 238000005530 etching Methods 0.000 description 13
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
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- 238000009792 diffusion process Methods 0.000 description 6
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- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 229960002050 hydrofluoric acid Drugs 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
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- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
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- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
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- 239000004332 silver Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
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- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
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- 238000010792 warming Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
【解決手段】単結晶シリコン基板の一方の面において、表面に形成された凹凸と、該凹凸の頂部に形成されたi型の第1の半導体層、キャリア濃度が相対的に高い第2の半導体層、及び電流収集電極からなる積層構造と、該単結晶シリコン基板の露出した表面、及び該積層構造を覆うi型の第3の半導体層と、第3の半導体層上に形成されたキャリア濃度が相対的に低い第4の半導体層を有し、第2の半導体層と第4の半導体層は、導電型が変化した第3の半導体層の一部を通じて電気的に接続された構成とする。
【選択図】図1
Description
110 第1のシリコン半導体層
120 第2のシリコン半導体層
130 第3のシリコン半導体層
140 第4のシリコン半導体層
150 第5のシリコン半導体層
160 第6のシリコン半導体層
170 第7のシリコン半導体層
180 第8のシリコン半導体層
210 第1の電極
210a 導電層
220 第2の電極
230 保護層
231 保護層
240 領域
241 領域
300 レジストマスク
301 レジストマスク
302 レジストマスク
Claims (13)
- 頂部が平坦な格子状の凸部、及び該凸部間の凹部からなる凹凸を一方の面に有する一導電型の単結晶シリコン基板と、
前記凸部の頂部に形成されたi型の第1のシリコン半導体層と、
前記第1のシリコン半導体層上に形成された前記単結晶シリコン基板とは逆の導電型を有する第2のシリコン半導体層と、
前記第2のシリコン半導体層上に形成された第1の電極と、
前記単結晶シリコン基板の一方の面において、前記単結晶シリコン基板、前記第1のシリコン半導体層、前記第2のシリコン半導体層、及び前記第1の電極の積層構造の表面を覆うように形成されたi型の第3のシリコン半導体層と、
前記第3のシリコン半導体層上に形成された前記単結晶シリコン基板とは逆の導電型を有する第4のシリコン半導体層と、
前記第4のシリコン半導体層上に形成された保護膜と、
前記単結晶シリコン基板の他方の面に形成されたi型の第5のシリコン半導体層と、
前記第5のシリコン半導体層上に形成された前記単結晶シリコン基板と同じ導電型を有する第6のシリコン半導体層と、
前記第6のシリコン半導体層上に形成された第2の電極と、
を有することを特徴とする光電変換装置。 - 請求項1において、前記第1の電極の幅は、前記第2のシリコン半導体層の幅よりも小さいことを特徴とする光電変換装置。
- 請求項1乃至3のいずれか一項において、前記保護膜は、透光性を有する絶縁膜であることを特徴とする光電変換装置。
- 頂部が平坦な格子状の凸部、及び該凸部間の凹部からなる凹凸を両面に有する一導電型の単結晶シリコン基板と、
前記単結晶シリコン基板の一方の面における前記凸部の頂部に形成されたi型の第1のシリコン半導体層と、
前記第1のシリコン半導体層上に形成された前記単結晶シリコン基板とは逆の導電型を有する第2のシリコン半導体層と、
前記第2のシリコン半導体層上に形成された第1の電極と、
前記単結晶シリコン基板の一方の面において、前記単結晶シリコン基板、前記第1のシリコン半導体層、前記第2のシリコン半導体層、及び前記第1の電極の積層構造の表面を覆うように形成されたi型の第3のシリコン半導体層と、
前記第3のシリコン半導体層上に形成された前記単結晶シリコン基板とは逆の導電型を有する第4のシリコン半導体層と、
前記第4のシリコン半導体層上に形成された第1の保護膜と、
前記単結晶シリコン基板の他方の面における前記凸部の頂部に形成されたi型の第5のシリコン半導体層と、
前記第5のシリコン半導体層上に形成された前記単結晶シリコン基板 と同じ導電型を有する第6のシリコン半導体層と、
前記第6のシリコン半導体層上に形成された第2の電極と、
前記単結晶シリコン基板の他方の面において、前記単結晶シリコン基板、前記第5のシリコン半導体層、前記第6のシリコン半導体層、及び前記第2の電極の積層構造の表面を覆うように形成された第7のシリコン半導体層と、
前記第7のシリコン半導体層上に形成された前記単結晶シリコン基板と同じ導電型を有する第8のシリコン半導体層と、
前記第8のシリコン半導体層上に形成された第2の保護膜と、
を有することを特徴とする光電変換装置。 - 請求項1乃至4のいずれか一項において、前記凹部は、逆四角錐状の形状であることを特徴とする光電変換装置。
- 請求項1乃至5のいずれか一項において、前記凹部には、前記凸部よりも高さの低い複数の凸部及び該凸部間の凹部からなる凹凸が形成されていることを特徴とする光電変換装置。
- 請求項1乃至6のいずれか一項において、前記第2のシリコン半導体層及び前記第4のシリコン半導体層で挟まれる前記第3のシリコン半導体層の一部の領域は、前記第2のシリコン半導体層及び前記第4のシリコン半導体と同じ導電型であり、その他の領域はi型であることを特徴とする光電変換装置。
- 請求項1乃至7のいずれか一項において、前記第2のシリコン半導体層は、前記第4のシリコン半導体層よりもキャリア濃度が高いことを特徴とする光電変換装置。
- 請求項1乃至8のいずれか一項において、前記第6のシリコン半導体層は、前記単結晶シリコン基板よりもキャリア濃度が高いことを特徴とする光電変換装置。
- 請求項4乃至9のいずれか一項において、前記第1の電極及び前記第2の電極の幅は、前記第2のシリコン半導体層及び第6のシリコン半導体層の幅よりも小さいことを特徴とする光電変換装置。
- 請求項4乃至10のいずれか一項において、前記第6のシリコン半導体層及び前記第8のシリコン半導体層で挟まれる前記第7のシリコン半導体層の一部の領域は、前記第6のシリコン半導体層及び前記第8のシリコン半導体と同じ導電型であり、その他の領域はi型であることを特徴とする光電変換装置。
- 請求項4乃至11のいずれか一項において、前記第6のシリコン半導体層は、前記第8のシリコン半導体層よりもキャリア濃度が高いことを特徴とする光電変換装置。
- 請求項4乃至12のいずれか一項において、前記第1の保護膜、及び前記第2の保護膜は、透光性を有する絶縁膜であることを特徴とする光電変換装置。
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KR20140092970A (ko) * | 2013-01-16 | 2014-07-25 | 엘지전자 주식회사 | 태양 전지 및 그의 제조 방법 |
KR20140094698A (ko) * | 2013-01-21 | 2014-07-31 | 엘지전자 주식회사 | 태양 전지 및 그의 제조 방법 |
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---|---|---|---|---|
JP2013077685A (ja) | 2011-09-30 | 2013-04-25 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
JP5927027B2 (ja) | 2011-10-05 | 2016-05-25 | 株式会社半導体エネルギー研究所 | 光電変換装置 |
JP5917082B2 (ja) | 2011-10-20 | 2016-05-11 | 株式会社半導体エネルギー研究所 | 光電変換装置の作製方法 |
JP7206660B2 (ja) * | 2018-07-17 | 2023-01-18 | セイコーエプソン株式会社 | 光電変換素子、光電変換モジュールおよび電子機器 |
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JP2003031831A (ja) * | 2001-07-13 | 2003-01-31 | Sanyo Electric Co Ltd | 光起電力素子及びその製造方法 |
JP2005175160A (ja) * | 2003-12-10 | 2005-06-30 | Sanyo Electric Co Ltd | 光起電力装置 |
US20070204902A1 (en) * | 2005-11-29 | 2007-09-06 | Banpil Photonics, Inc. | High efficiency photovoltaic cells and manufacturing thereof |
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JPH0795603B2 (ja) | 1990-09-20 | 1995-10-11 | 三洋電機株式会社 | 光起電力装置 |
US5213628A (en) | 1990-09-20 | 1993-05-25 | Sanyo Electric Co., Ltd. | Photovoltaic device |
JP3469729B2 (ja) | 1996-10-31 | 2003-11-25 | 三洋電機株式会社 | 太陽電池素子 |
US6222117B1 (en) * | 1998-01-05 | 2001-04-24 | Canon Kabushiki Kaisha | Photovoltaic device, manufacturing method of photovoltaic device, photovoltaic device integrated with building material and power-generating apparatus |
US20110041910A1 (en) | 2009-08-18 | 2011-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
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JP2003031831A (ja) * | 2001-07-13 | 2003-01-31 | Sanyo Electric Co Ltd | 光起電力素子及びその製造方法 |
JP2005175160A (ja) * | 2003-12-10 | 2005-06-30 | Sanyo Electric Co Ltd | 光起電力装置 |
US20070204902A1 (en) * | 2005-11-29 | 2007-09-06 | Banpil Photonics, Inc. | High efficiency photovoltaic cells and manufacturing thereof |
WO2010113750A1 (ja) * | 2009-03-30 | 2010-10-07 | 三洋電機株式会社 | 太陽電池 |
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KR20140092970A (ko) * | 2013-01-16 | 2014-07-25 | 엘지전자 주식회사 | 태양 전지 및 그의 제조 방법 |
KR101925929B1 (ko) | 2013-01-16 | 2018-12-06 | 엘지전자 주식회사 | 태양 전지 및 그의 제조 방법 |
KR20140094698A (ko) * | 2013-01-21 | 2014-07-31 | 엘지전자 주식회사 | 태양 전지 및 그의 제조 방법 |
KR101925928B1 (ko) | 2013-01-21 | 2018-12-06 | 엘지전자 주식회사 | 태양 전지 및 그의 제조 방법 |
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JP5948148B2 (ja) | 2016-07-06 |
US20120298191A1 (en) | 2012-11-29 |
US9012769B2 (en) | 2015-04-21 |
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