DE3581353D1 - Halbleiteranordnung mit monokristalliner schicht aus ga-as auf einem substrat aus silicium und verfahren zu deren herstellung. - Google Patents
Halbleiteranordnung mit monokristalliner schicht aus ga-as auf einem substrat aus silicium und verfahren zu deren herstellung.Info
- Publication number
- DE3581353D1 DE3581353D1 DE8585112542T DE3581353T DE3581353D1 DE 3581353 D1 DE3581353 D1 DE 3581353D1 DE 8585112542 T DE8585112542 T DE 8585112542T DE 3581353 T DE3581353 T DE 3581353T DE 3581353 D1 DE3581353 D1 DE 3581353D1
- Authority
- DE
- Germany
- Prior art keywords
- monocristalline
- silicon
- production
- layer
- substrate made
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
- H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02461—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
- H01L21/02507—Alternating layers, e.g. superlattice
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/149—Silicon on III-V
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59213188A JPS6191098A (ja) | 1984-10-09 | 1984-10-09 | シリコン基板上における砒素化ガリウム成長結晶体とその結晶成長方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3581353D1 true DE3581353D1 (de) | 1991-02-21 |
Family
ID=16634992
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585112542T Expired - Fee Related DE3581353D1 (de) | 1984-10-09 | 1985-10-03 | Halbleiteranordnung mit monokristalliner schicht aus ga-as auf einem substrat aus silicium und verfahren zu deren herstellung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4789421A (de) |
EP (1) | EP0177903B1 (de) |
JP (1) | JPS6191098A (de) |
CA (1) | CA1265980A (de) |
DE (1) | DE3581353D1 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0214610B1 (de) * | 1985-09-03 | 1990-12-05 | Daido Tokushuko Kabushiki Kaisha | Epitaktische Gallium-Arsenid-Halbleiterscheibe und Verfahren zu ihrer Herstellung |
US5578521A (en) * | 1986-11-20 | 1996-11-26 | Nippondenso Co., Ltd. | Semiconductor device with vaporphase grown epitaxial |
FR2620863B1 (fr) * | 1987-09-22 | 1989-12-01 | Thomson Csf | Dispositif optoelectronique a base de composes iii-v sur substrat silicium |
JPH01107515A (ja) * | 1987-10-20 | 1989-04-25 | Daido Steel Co Ltd | 半導体素子の製造方法 |
JP2649936B2 (ja) * | 1988-03-01 | 1997-09-03 | 富士通株式会社 | 歪超格子バッファ |
US5194395A (en) * | 1988-07-28 | 1993-03-16 | Fujitsu Limited | Method of producing a substrate having semiconductor-on-insulator structure with gettering sites |
JPH0237771A (ja) * | 1988-07-28 | 1990-02-07 | Fujitsu Ltd | Soi基板 |
JPH0294663A (ja) * | 1988-09-30 | 1990-04-05 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US5198269A (en) * | 1989-04-24 | 1993-03-30 | Battelle Memorial Institute | Process for making sol-gel deposited ferroelectric thin films insensitive to their substrates |
JP2557546B2 (ja) * | 1990-03-30 | 1996-11-27 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP3111644B2 (ja) * | 1992-06-09 | 2000-11-27 | 三菱化学株式会社 | りん化ひ化ガリウムエピタキシャルウエハ |
US5993981A (en) * | 1997-04-18 | 1999-11-30 | Raytheon Company | Broadband protective optical window coating |
US20070252216A1 (en) * | 2006-04-28 | 2007-11-01 | Infineon Technologies Ag | Semiconductor device and a method of manufacturing such a semiconductor device |
NO20093193A1 (no) * | 2009-10-22 | 2011-04-26 | Integrated Solar As | Fremgangsmate for fremstilling av fotoelektriske solceller og en multifunksjonell solcelle |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2225207B1 (de) * | 1973-04-16 | 1978-04-21 | Ibm | |
US4066481A (en) * | 1974-11-11 | 1978-01-03 | Rockwell International Corporation | Metalorganic chemical vapor deposition of IVA-IVA compounds and composite |
US4517047A (en) * | 1981-01-23 | 1985-05-14 | The United States Of America As Represented By The Secretary Of The Army | MBE growth technique for matching superlattices grown on GaAs substrates |
US4578127A (en) * | 1982-08-13 | 1986-03-25 | At&T Bell Laboratories | Method of making an improved group III-V semiconductor device utilizing a getter-smoothing layer |
JPS6012724A (ja) * | 1983-07-01 | 1985-01-23 | Agency Of Ind Science & Technol | 化合物半導体の成長方法 |
US4588451A (en) * | 1984-04-27 | 1986-05-13 | Advanced Energy Fund Limited Partnership | Metal organic chemical vapor deposition of 111-v compounds on silicon |
-
1984
- 1984-10-09 JP JP59213188A patent/JPS6191098A/ja active Granted
-
1985
- 1985-09-27 US US06/780,910 patent/US4789421A/en not_active Expired - Fee Related
- 1985-10-01 CA CA000491985A patent/CA1265980A/en not_active Expired - Fee Related
- 1985-10-03 DE DE8585112542T patent/DE3581353D1/de not_active Expired - Fee Related
- 1985-10-03 EP EP85112542A patent/EP0177903B1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US4789421A (en) | 1988-12-06 |
CA1265980A (en) | 1990-02-20 |
EP0177903A3 (en) | 1987-09-09 |
JPH0463039B2 (de) | 1992-10-08 |
JPS6191098A (ja) | 1986-05-09 |
EP0177903A2 (de) | 1986-04-16 |
EP0177903B1 (de) | 1991-01-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Free format text: BLUMBACH, KRAMER & PARTNER, 81245 MUENCHEN |
|
8339 | Ceased/non-payment of the annual fee |