DE3689371D1 - Verfahren zur Herstellung einer Halbleiteranordnung einschliesslich der Formierung einer vielschichtigen Interkonnektionsschicht. - Google Patents

Verfahren zur Herstellung einer Halbleiteranordnung einschliesslich der Formierung einer vielschichtigen Interkonnektionsschicht.

Info

Publication number
DE3689371D1
DE3689371D1 DE86303513T DE3689371T DE3689371D1 DE 3689371 D1 DE3689371 D1 DE 3689371D1 DE 86303513 T DE86303513 T DE 86303513T DE 3689371 T DE3689371 T DE 3689371T DE 3689371 D1 DE3689371 D1 DE 3689371D1
Authority
DE
Germany
Prior art keywords
layer
formation
manufacturing
semiconductor device
device including
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE86303513T
Other languages
English (en)
Other versions
DE3689371T2 (de
Inventor
Katsuya C O Patent Div Okumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3689371D1 publication Critical patent/DE3689371D1/de
Application granted granted Critical
Publication of DE3689371T2 publication Critical patent/DE3689371T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/974—Substrate surface preparation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE86303513T 1985-05-13 1986-05-08 Verfahren zur Herstellung einer Halbleiteranordnung einschliesslich der Formierung einer vielschichtigen Interkonnektionsschicht. Expired - Lifetime DE3689371T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60100916A JPS61258453A (ja) 1985-05-13 1985-05-13 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE3689371D1 true DE3689371D1 (de) 1994-01-20
DE3689371T2 DE3689371T2 (de) 1994-05-11

Family

ID=14286661

Family Applications (1)

Application Number Title Priority Date Filing Date
DE86303513T Expired - Lifetime DE3689371T2 (de) 1985-05-13 1986-05-08 Verfahren zur Herstellung einer Halbleiteranordnung einschliesslich der Formierung einer vielschichtigen Interkonnektionsschicht.

Country Status (5)

Country Link
US (1) US4914056A (de)
EP (1) EP0215542B1 (de)
JP (1) JPS61258453A (de)
KR (1) KR900004187B1 (de)
DE (1) DE3689371T2 (de)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4824521A (en) * 1987-04-01 1989-04-25 Fairchild Semiconductor Corporation Planarization of metal pillars on uneven substrates
DE3735959A1 (de) * 1987-10-23 1989-05-03 Bbc Brown Boveri & Cie Mehrlagige duennschichtschaltung sowie verfahren zu deren herstellung
JPH02265243A (ja) * 1989-04-05 1990-10-30 Nec Corp 多層配線およびその形成方法
DE69031357T2 (de) * 1989-04-21 1998-04-02 Nippon Electric Co Halbleiteranordnung mit Mehrschichtleiter
JPH04123458A (ja) * 1990-09-14 1992-04-23 Mitsubishi Electric Corp 半導体装置の製造方法
US5290396A (en) * 1991-06-06 1994-03-01 Lsi Logic Corporation Trench planarization techniques
US5413966A (en) * 1990-12-20 1995-05-09 Lsi Logic Corporation Shallow trench etch
US5248625A (en) * 1991-06-06 1993-09-28 Lsi Logic Corporation Techniques for forming isolation structures
US5252503A (en) * 1991-06-06 1993-10-12 Lsi Logic Corporation Techniques for forming isolation structures
US5225358A (en) * 1991-06-06 1993-07-06 Lsi Logic Corporation Method of forming late isolation with polishing
US5504375A (en) * 1992-03-02 1996-04-02 International Business Machines Corporation Asymmetric studs and connecting lines to minimize stress
KR950006343B1 (ko) * 1992-05-16 1995-06-14 금성일렉트론주식회사 반도체 장치의 제조방법
JP2853719B2 (ja) * 1992-06-08 1999-02-03 日本電気株式会社 半導体装置
JP3457348B2 (ja) * 1993-01-15 2003-10-14 株式会社東芝 半導体装置の製造方法
US5338702A (en) * 1993-01-27 1994-08-16 International Business Machines Corporation Method for fabricating tungsten local interconnections in high density CMOS
JP2727909B2 (ja) * 1993-03-26 1998-03-18 松下電器産業株式会社 金属配線の形成方法
US5471094A (en) 1994-02-24 1995-11-28 Integrated Device Technology, Inc. Self-aligned via structure
US5512514A (en) * 1994-11-08 1996-04-30 Spider Systems, Inc. Self-aligned via and contact interconnect manufacturing method
US5907177A (en) * 1995-03-14 1999-05-25 Matsushita Electric Industrial Co.,Ltd. Semiconductor device having a tapered gate electrode
US5726498A (en) * 1995-05-26 1998-03-10 International Business Machines Corporation Wire shape conferring reduced crosstalk and formation methods
US6191484B1 (en) 1995-07-28 2001-02-20 Stmicroelectronics, Inc. Method of forming planarized multilevel metallization in an integrated circuit
US5593919A (en) * 1995-09-05 1997-01-14 Motorola Inc. Process for forming a semiconductor device including conductive members
US5693568A (en) * 1995-12-14 1997-12-02 Advanced Micro Devices, Inc. Reverse damascene via structures
US6004874A (en) * 1996-06-26 1999-12-21 Cypress Semiconductor Corporation Method for forming an interconnect
KR100216271B1 (ko) * 1996-07-30 1999-08-16 구본준 반도체 소자의 금속 배선 형성방법
JPH1048610A (ja) * 1996-07-31 1998-02-20 Furontetsuku:Kk 液晶表示素子
US5898221A (en) * 1996-09-27 1999-04-27 Sanyo Electric Company, Ltd. Semiconductor device having upper and lower wiring layers
US6066548A (en) * 1996-10-31 2000-05-23 Micron Technology, Inc. Advance metallization process
TW347570B (en) * 1996-12-24 1998-12-11 Toshiba Co Ltd Semiconductor device and method for manufacturing the same
JPH11121612A (ja) * 1997-10-14 1999-04-30 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6222136B1 (en) * 1997-11-12 2001-04-24 International Business Machines Corporation Printed circuit board with continuous connective bumps
US6291891B1 (en) 1998-01-13 2001-09-18 Kabushiki Kaisha Toshiba Semiconductor device manufacturing method and semiconductor device
FR2780202A1 (fr) * 1998-06-23 1999-12-24 St Microelectronics Sa Circuit integre a niveau de metallisation d'epaisseur variable
KR100295061B1 (ko) * 1999-03-29 2001-07-12 윤종용 챔퍼가 형성된 실리사이드층을 갖춘 반도체소자 및 그 제조방법
KR100297738B1 (ko) * 1999-10-07 2001-11-02 윤종용 챔퍼가 형성된 금속 실리사이드층을 갖춘 반도체소자의 제조방법
US6469392B2 (en) * 2000-12-28 2002-10-22 Infineon Technologies Ag Conductive lines with reduced pitch
US6992394B2 (en) * 2000-12-28 2006-01-31 Infineon Technologies Ag Multi-level conductive lines with reduced pitch
EP1525630A2 (de) * 2002-07-29 2005-04-27 Siemens Aktiengesellschaft Elektronisches bauteil mit vorwiegend organischen funktionsmaterialien und herstellungsverfahren dazu
ATE382585T1 (de) * 2003-06-24 2008-01-15 Cardinal Cg Co Konzentrationsmodulierte beschichtungen
SG11201601295TA (en) * 2013-08-28 2016-03-30 Inst Of Technical Education Multilayer structure for a semiconductor device and a method of forming a multilayer structure for a semiconductor device
EP4050644A1 (de) * 2021-02-24 2022-08-31 Imec VZW Verfahren zur herstellung einer verbindungsstruktur

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4894866A (de) * 1972-03-15 1973-12-06
GB8316476D0 (en) * 1983-06-16 1983-07-20 Plessey Co Plc Producing layered structure
DE3331759A1 (de) * 1983-09-02 1985-03-21 Siemens AG, 1000 Berlin und 8000 München Integrierte halbleiterschaltung mit einer aus aluminium oder aus einer aluminium-legierung bestehenden mehrlagenverdrahtung und verfahren zu ihrer herstellung.
US4670091A (en) * 1984-08-23 1987-06-02 Fairchild Semiconductor Corporation Process for forming vias on integrated circuits
EP0175604B1 (de) * 1984-08-23 1989-07-19 Fairchild Semiconductor Corporation Verfahren zum Herstellen von Kontaktlöchern auf integrierten Schaltungen
US4614021A (en) * 1985-03-29 1986-09-30 Motorola, Inc. Pillar via process

Also Published As

Publication number Publication date
KR900004187B1 (ko) 1990-06-18
US4914056A (en) 1990-04-03
EP0215542A2 (de) 1987-03-25
EP0215542B1 (de) 1993-12-08
JPS61258453A (ja) 1986-11-15
EP0215542A3 (en) 1988-09-28
KR860009481A (ko) 1986-12-23
DE3689371T2 (de) 1994-05-11

Similar Documents

Publication Publication Date Title
DE3689371D1 (de) Verfahren zur Herstellung einer Halbleiteranordnung einschliesslich der Formierung einer vielschichtigen Interkonnektionsschicht.
DE68924366D1 (de) Verfahren zur Herstellung einer Halbleitervorrichtung.
DE3686315D1 (de) Verfahren zur herstellung einer halbleiterstruktur.
DE69015216D1 (de) Verfahren zur Herstellung einer Halbleitervorrichtung.
AT399421B (de) Verfahren zur ausbildung einer dünnen halbleiterschicht
DE68929150D1 (de) Verfahren zur Herstellung einer Halbleitervorrichtung
DE3280182D1 (de) Verfahren zur herstellung einer monokristallinen schicht.
DE3688042D1 (de) Verfahren zur herstellung einer submikron-grabenstruktur auf einem halbleitenden substrat.
DE69011203D1 (de) Verfahren zur Herstellung einer Halbleitervorrichtung durch Abdecken einer leitenden Schicht mit einer Nitridschicht.
DE3482077D1 (de) Verfahren zur herstellung einer halbleiteranordnung vom soi-typ.
DE69023558D1 (de) Verfahren zur Herstellung einer Halbleitervorrichtung.
DE3775459D1 (de) Verfahren zur herstellung einer diamantenschicht.
DE68921559D1 (de) Verfahren zur Herstellung einer vom Substrat elektrisch isolierten Halbleiterschicht.
DE3381126D1 (de) Verfahren zur herstellung einer monokristallinen halbleiterschicht.
DE69016955D1 (de) Verfahren zur Herstellung einer Halbleiteranordnung.
DE3581919D1 (de) Verfahren zur herstellung von halbleiterbauelementen mit einer sauerstoff enthaltenden polykristallinen siliciumschicht.
DE3784537D1 (de) Herstellungsverfahren einer niedergeschlagenen schicht.
DE3582143D1 (de) Verfahren zur herstellung einer halbleitervorrichtung.
DE3672570D1 (de) Verfahren zur herstellung einer planaren halbleiteranordnung mit graeben.
DE3684844D1 (de) Verfahren zur herstellung einer halbleiteranordnung mittels der herstellung einer vielschichtigen verbindungsstruktur.
DE3381801D1 (de) Halbleiteranordnung mit einer zwischenschicht aus einem uebergangselement und verfahren zur herstellung derselben.
DE3872430D1 (de) Verfahren zur herstellung einer schicht aus supraleitendem material.
DE3779802D1 (de) Verfahren zur herstellung einer halbleiteranordnung.
DE3851248D1 (de) Verfahren zur Herstellung einer supraleitenden Schaltung.
DE3578618D1 (de) Verfahren zur herstellung von halbleiteranordnungen mit einer ueberlagerten schicht aus polykristallinem silizium.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)