DE3685623T2 - Duennfilmtransistor und verfahren zu seiner herstellung. - Google Patents

Duennfilmtransistor und verfahren zu seiner herstellung.

Info

Publication number
DE3685623T2
DE3685623T2 DE8686113674T DE3685623T DE3685623T2 DE 3685623 T2 DE3685623 T2 DE 3685623T2 DE 8686113674 T DE8686113674 T DE 8686113674T DE 3685623 T DE3685623 T DE 3685623T DE 3685623 T2 DE3685623 T2 DE 3685623T2
Authority
DE
Germany
Prior art keywords
film transistor
production
semiconductor layer
thin film
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686113674T
Other languages
English (en)
Other versions
DE3685623D1 (de
Inventor
Shigeo Aoki
Yasuhiro Ukai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Components Kobe KK
Original Assignee
Hosiden Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP60221666A external-priority patent/JPH0622244B2/ja
Priority claimed from JP60221667A external-priority patent/JPS6281065A/ja
Application filed by Hosiden Corp filed Critical Hosiden Corp
Publication of DE3685623D1 publication Critical patent/DE3685623D1/de
Application granted granted Critical
Publication of DE3685623T2 publication Critical patent/DE3685623T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02C—SPECTACLES; SUNGLASSES OR GOGGLES INSOFAR AS THEY HAVE THE SAME FEATURES AS SPECTACLES; CONTACT LENSES
    • G02C7/00—Optical parts
    • G02C7/02—Lenses; Lens systems ; Methods of designing lenses
    • G02C7/04—Contact lenses for the eyes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78666—Amorphous silicon transistors with normal-type structure, e.g. with top gate
DE8686113674T 1985-10-04 1986-10-03 Duennfilmtransistor und verfahren zu seiner herstellung. Expired - Lifetime DE3685623T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60221666A JPH0622244B2 (ja) 1985-10-04 1985-10-04 薄膜トランジスタ及びその製造方法
JP60221667A JPS6281065A (ja) 1985-10-04 1985-10-04 薄膜トランジスタ

Publications (2)

Publication Number Publication Date
DE3685623D1 DE3685623D1 (de) 1992-07-16
DE3685623T2 true DE3685623T2 (de) 1992-12-24

Family

ID=26524429

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686113674T Expired - Lifetime DE3685623T2 (de) 1985-10-04 1986-10-03 Duennfilmtransistor und verfahren zu seiner herstellung.

Country Status (5)

Country Link
US (2) US4864376A (de)
EP (1) EP0217406B1 (de)
KR (1) KR900000066B1 (de)
AT (1) ATE77177T1 (de)
DE (1) DE3685623T2 (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE77177T1 (de) * 1985-10-04 1992-06-15 Hosiden Corp Duennfilmtransistor und verfahren zu seiner herstellung.
US4990460A (en) * 1989-01-27 1991-02-05 Nec Corporation Fabrication method for thin film field effect transistor array suitable for liquid crystal display
US5053347A (en) * 1989-08-03 1991-10-01 Industrial Technology Research Institute Amorphous silicon thin film transistor with a depletion gate
JP2976483B2 (ja) * 1990-04-24 1999-11-10 日本電気株式会社 液晶表示素子用薄膜トランジスタの製造方法
US5198694A (en) * 1990-10-05 1993-03-30 General Electric Company Thin film transistor structure with improved source/drain contacts
KR920008834A (ko) * 1990-10-09 1992-05-28 아이자와 스스무 박막 반도체 장치
KR950013784B1 (ko) * 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
US5849601A (en) 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7098479B1 (en) 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7576360B2 (en) 1990-12-25 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device which comprises thin film transistors and method for manufacturing the same
CA2061796C (en) * 1991-03-28 2002-12-24 Kalluri R. Sarma High mobility integrated drivers for active matrix displays
JP3255942B2 (ja) * 1991-06-19 2002-02-12 株式会社半導体エネルギー研究所 逆スタガ薄膜トランジスタの作製方法
KR950003235B1 (ko) * 1991-12-30 1995-04-06 주식회사 금성사 반도체 소자의 구조
JP3378280B2 (ja) * 1992-11-27 2003-02-17 株式会社東芝 薄膜トランジスタおよびその製造方法
US7081938B1 (en) 1993-12-03 2006-07-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
JP3272532B2 (ja) * 1993-12-27 2002-04-08 富士通株式会社 半導体装置の製造方法
US6790714B2 (en) * 1995-07-03 2004-09-14 Sanyo Electric Co., Ltd. Semiconductor device, display device and method of fabricating the same
US5771110A (en) * 1995-07-03 1998-06-23 Sanyo Electric Co., Ltd. Thin film transistor device, display device and method of fabricating the same
US6800875B1 (en) 1995-11-17 2004-10-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-luminescent display device with an organic leveling layer
TW439003B (en) 1995-11-17 2001-06-07 Semiconductor Energy Lab Display device
JPH09146108A (ja) 1995-11-17 1997-06-06 Semiconductor Energy Lab Co Ltd 液晶表示装置およびその駆動方法
KR100198556B1 (ko) * 1995-11-22 1999-07-01 구자홍 박막트랜지스터의 구조 및 제조방법
TW309633B (de) 1995-12-14 1997-07-01 Handotai Energy Kenkyusho Kk
JP2757850B2 (ja) * 1996-04-18 1998-05-25 日本電気株式会社 薄膜トランジスタおよびその製造方法
US5913113A (en) * 1997-02-24 1999-06-15 Lg Electronics Inc. Method for fabricating a thin film transistor of a liquid crystal display device
GB9726094D0 (en) * 1997-12-10 1998-02-11 Philips Electronics Nv Thin film transistors and electronic devices comprising such
KR100330096B1 (ko) * 1998-11-27 2002-10-25 삼성전자 주식회사 액정표시장치
US6475836B1 (en) 1999-03-29 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR100524622B1 (ko) * 1999-04-03 2005-11-01 엘지.필립스 엘시디 주식회사 폴리실리콘 반도체층을 포함한 박막트랜지스터 제조방법
US6407617B1 (en) * 1999-11-19 2002-06-18 Matsushita Electric Industrial Co., Ltd. Bias circuit and method of fabricating semiconductor device
US6620719B1 (en) * 2000-03-31 2003-09-16 International Business Machines Corporation Method of forming ohmic contacts using a self doping layer for thin-film transistors
KR101406889B1 (ko) * 2007-12-24 2014-06-13 삼성디스플레이 주식회사 박막트랜지스터 및 그의 제조 방법
JP5363009B2 (ja) * 2008-02-29 2013-12-11 株式会社ジャパンディスプレイ 表示装置およびその製造方法
KR20090108431A (ko) * 2008-04-11 2009-10-15 삼성전자주식회사 표시 기판 및 그 제조 방법
CN103022150B (zh) * 2012-12-25 2015-05-20 京东方科技集团股份有限公司 一种薄膜晶体管、其制备方法、阵列基板及显示装置

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1139170A (en) * 1965-12-22 1969-01-08 Mullard Ltd Thin film transistors
US3616527A (en) * 1968-07-15 1971-11-02 Ncr Co Method of accurately doping a semiconductor material layer
US4040073A (en) * 1975-08-29 1977-08-02 Westinghouse Electric Corporation Thin film transistor and display panel using the transistor
JPS54154289A (en) * 1978-05-26 1979-12-05 Matsushita Electric Ind Co Ltd Manufacture of thin-film transistor array
DE3028718C2 (de) * 1979-07-31 1982-08-19 Sharp K.K., Osaka Dünnfilmtransistor in Verbindung mit einer Anzeigevorrichtung
GB2107115B (en) * 1981-07-17 1985-05-09 Citizen Watch Co Ltd Method of manufacturing insulated gate thin film effect transitors
US4558340A (en) * 1983-06-29 1985-12-10 Stauffer Chemical Company Thin film field effect transistors utilizing a polypnictide semiconductor
US4398340A (en) * 1982-04-26 1983-08-16 The United States Of America As Represented By The Secretary Of The Army Method for making thin film field effect transistors
JPS58218169A (ja) * 1982-06-14 1983-12-19 Seiko Epson Corp 半導体集積回路装置
JPH0693509B2 (ja) * 1983-08-26 1994-11-16 シャープ株式会社 薄膜トランジスタ
JPS6052058A (ja) * 1983-09-01 1985-03-23 Komatsu Ltd 薄膜トランジスタ
JPS6083370A (ja) * 1983-10-14 1985-05-11 Hitachi Ltd 多結晶シリコン薄膜トランジスタ
GB8406330D0 (en) * 1984-03-10 1984-04-11 Lucas Ind Plc Amorphous silicon field effect transistors
JPH0697317B2 (ja) * 1984-04-11 1994-11-30 ホシデン株式会社 液晶表示器
US4727044A (en) * 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
ATE77177T1 (de) * 1985-10-04 1992-06-15 Hosiden Corp Duennfilmtransistor und verfahren zu seiner herstellung.
JPS6281057A (ja) * 1985-10-04 1987-04-14 Hosiden Electronics Co Ltd 透明導電膜
JPS6329977A (ja) * 1986-07-23 1988-02-08 Komatsu Ltd 薄膜トランジスタの製造方法
JP2572379B2 (ja) * 1986-07-31 1997-01-16 株式会社日立製作所 薄膜トランジスタの製造方法
JPS63172469A (ja) * 1987-01-12 1988-07-16 Fujitsu Ltd 薄膜トランジスタ
US4849797A (en) * 1987-01-23 1989-07-18 Hosiden Electronics Co., Ltd. Thin film transistor
US4762398A (en) * 1987-01-26 1988-08-09 Hosiden Electronics Co., Ltd. Pixel transistor free of parasitic capacitance fluctuations from misalignment
US4918504A (en) * 1987-07-31 1990-04-17 Nippon Telegraph And Telephone Corporation Active matrix cell
JPS6449478A (en) * 1987-08-20 1989-02-23 Mitsubishi Electric Corp Synchronizing signal processing circuit
JPS6449473A (en) * 1987-08-20 1989-02-23 Sanyo Electric Co Facsimile equipment
JPH01183853A (ja) * 1988-01-19 1989-07-21 Toshiba Corp 薄膜電界効果トランジスタとその製造方法
JP3198990B2 (ja) * 1997-06-17 2001-08-13 日新電機株式会社 コンデンサ装置

Also Published As

Publication number Publication date
US5061648A (en) 1991-10-29
DE3685623D1 (de) 1992-07-16
US4864376A (en) 1989-09-05
KR900000066B1 (ko) 1990-01-19
EP0217406A3 (en) 1988-01-07
EP0217406B1 (de) 1992-06-10
ATE77177T1 (de) 1992-06-15
EP0217406A2 (de) 1987-04-08
KR870004325A (ko) 1987-05-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: HOSIDEN AND PHILIPS DISPLAY CORP., KOBE, HYOGO, JP

8339 Ceased/non-payment of the annual fee