JPS57162465A - Mis transistor device - Google Patents
Mis transistor deviceInfo
- Publication number
- JPS57162465A JPS57162465A JP56047477A JP4747781A JPS57162465A JP S57162465 A JPS57162465 A JP S57162465A JP 56047477 A JP56047477 A JP 56047477A JP 4747781 A JP4747781 A JP 4747781A JP S57162465 A JPS57162465 A JP S57162465A
- Authority
- JP
- Japan
- Prior art keywords
- same
- gate
- interposing
- substrate
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 239000004020 conductor Substances 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain an MIS transistor device generating no variation of threshold voltage by a method wherein mutually adjoinin MIS transistors of two groups are constituted of electrode plates consisting of the same conductive material, insulating films consisting of the same material and having the same thickness, and the regions consisting of the same semiconductor material, the electrode plates are connected electrically, and one of the transistors is used as a gate. CONSTITUTION:The n type source region and drain region are formed by diffusion in the surface region of a p type Si substrate 42, and the gate electrode 41 is provided on the surface of the substrate 42 between the regions thereof interposing a gate insulating film 44 between them to constitute the MIS transistor. While polycrystallines Si layer 46 is provided on the surface region adjoining thereto interposing an insulating film 42 between them, and moreover a gate electrode 41' is formed thereon interposing an insulating film 44' between them. At this time, the two electrodes 41, 41' are formed with the same conductive material and are connected electrically, and the gate insulating films 44, 44' are formed with the same insulating material having the same thickness. Moreover the polycrystalline Si layer 46 is also formed with the material the same with the substrate 42, and impurity concentration are also made as the same.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56047477A JPS57162465A (en) | 1981-03-31 | 1981-03-31 | Mis transistor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56047477A JPS57162465A (en) | 1981-03-31 | 1981-03-31 | Mis transistor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57162465A true JPS57162465A (en) | 1982-10-06 |
Family
ID=12776211
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56047477A Pending JPS57162465A (en) | 1981-03-31 | 1981-03-31 | Mis transistor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57162465A (en) |
-
1981
- 1981-03-31 JP JP56047477A patent/JPS57162465A/en active Pending
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