JPS64767A - Thin film transistor - Google Patents

Thin film transistor

Info

Publication number
JPS64767A
JPS64767A JP7362087A JP7362087A JPS64767A JP S64767 A JPS64767 A JP S64767A JP 7362087 A JP7362087 A JP 7362087A JP 7362087 A JP7362087 A JP 7362087A JP S64767 A JPS64767 A JP S64767A
Authority
JP
Japan
Prior art keywords
deposited
contact hole
thin film
film transistor
hole parts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7362087A
Other languages
Japanese (ja)
Other versions
JPH01767A (en
Inventor
Yutaka Hirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP62-73620A priority Critical patent/JPH01767A/en
Priority claimed from JP62-73620A external-priority patent/JPH01767A/en
Publication of JPS64767A publication Critical patent/JPS64767A/en
Publication of JPH01767A publication Critical patent/JPH01767A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To obtain a semiconductor device having a large area, in which a polycrystalline thin film transistor is an element, by depositing contact layers, which connect a semiconductor layer and source and drain electrodes, only in contact hole parts at a temperature lower than a specified temperature of a substrate. CONSTITUTION:A semiconductor layer 102 is deposited on a substrate 101. Then, after an insulating layer 103 is deposited, contact hole parts 104 and 105 for embedding a source and a drain are formed by a photolithography method. Then contact layers 106 and 107 are deposited in the contact hole parts 104 and 105 by a CVD method. At this time the film is not deposited on a place other than the contact hole parts. Then, an insulating layer 109 is deposited again. The contact holes 110 and 111 are formed. Metal is evaporated on the entire surface. Thereafter, a source electrode 112, a gate electrode 113 and a drain electrode 114 are formed by a photolithography method, and a thin film transistor is completed.
JP62-73620A 1987-03-23 1987-03-27 thin film transistor Pending JPH01767A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62-73620A JPH01767A (en) 1987-03-23 1987-03-27 thin film transistor

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP6583187 1987-03-23
JP62-65831 1987-03-23
JP62-73620A JPH01767A (en) 1987-03-23 1987-03-27 thin film transistor

Publications (2)

Publication Number Publication Date
JPS64767A true JPS64767A (en) 1989-01-05
JPH01767A JPH01767A (en) 1989-01-05

Family

ID=

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5624777A (en) * 1992-01-10 1997-04-29 Fuji Photo Film Co., Ltd. Electrophotographic lithographic printing plate precursor
CN1093846C (en) * 1999-03-01 2002-11-06 株式会社村田制作所 Process for preparing low-temp. sintered ceramic composition

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5624777A (en) * 1992-01-10 1997-04-29 Fuji Photo Film Co., Ltd. Electrophotographic lithographic printing plate precursor
CN1093846C (en) * 1999-03-01 2002-11-06 株式会社村田制作所 Process for preparing low-temp. sintered ceramic composition

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