JPS5678168A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5678168A JPS5678168A JP13987380A JP13987380A JPS5678168A JP S5678168 A JPS5678168 A JP S5678168A JP 13987380 A JP13987380 A JP 13987380A JP 13987380 A JP13987380 A JP 13987380A JP S5678168 A JPS5678168 A JP S5678168A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- oxidized
- region
- oxidized film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 7
- 238000002955 isolation Methods 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 238000010276 construction Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To make the device flat in structure as a whole by a method wherein an oxidized film for isolation is embedded in a semiconductor substrate. CONSTITUTION:The oxidized film 2 for isolation is formed on a surface of an Si substrate, and a part 2a thereof is removed to partially disclose the surface of the substrate 1. Then, a single crystal Si 3 is formed in the removed part 2a. The substrate 1 is oxidization-treated to form the oxidized film 4 on the region 3 and the substrate 1 on the surface is made flat in structure. By depositing a poly-Si on the oxidized films 4, 5 and etching-removing the poly-Si layer and the upper layers of the films 2, 4, a gate 5 is formed on the region 3. A source 6 and drain 7 are then formed in the region 3 with the film 2 and the gate as masks and an oxidized film 8 is formed on the substrate 1 surface. Further, contact holes 8a are perforated in the film 8 and then an electrode 9 is provided. In this case, the position A of an end of the hole 8a is not necessary to be strictly regulated when it is perforated due to the construction of embedding the film 2 into the substrate 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13987380A JPS5678168A (en) | 1980-10-08 | 1980-10-08 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13987380A JPS5678168A (en) | 1980-10-08 | 1980-10-08 | Manufacture of semiconductor device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11391673A Division JPS5653861B2 (en) | 1973-10-12 | 1973-10-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5678168A true JPS5678168A (en) | 1981-06-26 |
Family
ID=15255543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13987380A Pending JPS5678168A (en) | 1980-10-08 | 1980-10-08 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5678168A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6390859A (en) * | 1986-10-06 | 1988-04-21 | Nec Corp | Thin film transistor and manufacture thereof |
-
1980
- 1980-10-08 JP JP13987380A patent/JPS5678168A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6390859A (en) * | 1986-10-06 | 1988-04-21 | Nec Corp | Thin film transistor and manufacture thereof |
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