JPS5487490A - Manufacture and integration of polysilicon resistor and polysilicon electrode - Google Patents

Manufacture and integration of polysilicon resistor and polysilicon electrode

Info

Publication number
JPS5487490A
JPS5487490A JP15585877A JP15585877A JPS5487490A JP S5487490 A JPS5487490 A JP S5487490A JP 15585877 A JP15585877 A JP 15585877A JP 15585877 A JP15585877 A JP 15585877A JP S5487490 A JPS5487490 A JP S5487490A
Authority
JP
Japan
Prior art keywords
polysilicon
resistor
ions
electrode
poly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15585877A
Other languages
Japanese (ja)
Inventor
Yoshinori Takasuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15585877A priority Critical patent/JPS5487490A/en
Publication of JPS5487490A publication Critical patent/JPS5487490A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To realize a good-reproducibility process by independently adding impurities to poly-Si for the formation of the electrode of a semiconductor device and to poly-Si for the formation of a resistor. CONSTITUTION:Onto the thick field oxidized film, polysilicon body 291 is provided which becomes a integrated resistor. At the time of forming source-drain region 34, impurities are diffused into polysilicon layer 292 as a gate electrode, but polysilicon body 291 is masked with layers 31, 32 and 33. To form region 34 next, oxidized film 35 formed on the entire surface of the substrate is used as an ion-injection protective film, and ions are injected into the entire surface selecting the kind of ions and energy so that the maximum fly of ions will be less than the thickness of the protective film, thereby partially or entirely converting polysilicon body 291 into the desired integrated resistor.
JP15585877A 1977-12-23 1977-12-23 Manufacture and integration of polysilicon resistor and polysilicon electrode Pending JPS5487490A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15585877A JPS5487490A (en) 1977-12-23 1977-12-23 Manufacture and integration of polysilicon resistor and polysilicon electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15585877A JPS5487490A (en) 1977-12-23 1977-12-23 Manufacture and integration of polysilicon resistor and polysilicon electrode

Publications (1)

Publication Number Publication Date
JPS5487490A true JPS5487490A (en) 1979-07-11

Family

ID=15615030

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15585877A Pending JPS5487490A (en) 1977-12-23 1977-12-23 Manufacture and integration of polysilicon resistor and polysilicon electrode

Country Status (1)

Country Link
JP (1) JPS5487490A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04211167A (en) * 1991-01-28 1992-08-03 Seiko Epson Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04211167A (en) * 1991-01-28 1992-08-03 Seiko Epson Corp Semiconductor device

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