JPS6480072A - Manufacture of image senser integrating tft - Google Patents

Manufacture of image senser integrating tft

Info

Publication number
JPS6480072A
JPS6480072A JP62237894A JP23789487A JPS6480072A JP S6480072 A JPS6480072 A JP S6480072A JP 62237894 A JP62237894 A JP 62237894A JP 23789487 A JP23789487 A JP 23789487A JP S6480072 A JPS6480072 A JP S6480072A
Authority
JP
Japan
Prior art keywords
tft
senser
image senser
patterned
image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62237894A
Other languages
Japanese (ja)
Inventor
Shunichi Inagi
Mamoru Ishida
Zenichi Akiyama
Mitsuhiro Kobata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Research Institute of General Electronics Co Ltd
Ricoh Co Ltd
Original Assignee
Ricoh Research Institute of General Electronics Co Ltd
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Research Institute of General Electronics Co Ltd, Ricoh Co Ltd filed Critical Ricoh Research Institute of General Electronics Co Ltd
Priority to JP62237894A priority Critical patent/JPS6480072A/en
Publication of JPS6480072A publication Critical patent/JPS6480072A/en
Pending legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To perform a part of manufacturing process of image senser and TFT simultaneously while reducing the resistance of a gate electrode by a method wherein the shielding layer of an image senser and the gate electrode of a thin film transistor are formed simultaneously. CONSTITUTION:An active layer 2 is formed and patterned on a transparent insulating substrate 1 and then a gate oxide film 3 is formed. After forming the oxide film 3, the surface is channel-doped to VTH control a TFT and then Cr is deposited on overall surface to be patterned. At this time, shielding layers 4' of image senser part and a gate electrode 4 of the TFT are formed simultaneously. Later, a source.drain 5 is formed. Next, an interlayer insulating film 6 is formed to be patterned and etched away for making a contact hole. Finally, a metallic electrode 7 is formed and then senser forming process is performed to manufacture an image senser integrating TFT.
JP62237894A 1987-09-21 1987-09-21 Manufacture of image senser integrating tft Pending JPS6480072A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62237894A JPS6480072A (en) 1987-09-21 1987-09-21 Manufacture of image senser integrating tft

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62237894A JPS6480072A (en) 1987-09-21 1987-09-21 Manufacture of image senser integrating tft

Publications (1)

Publication Number Publication Date
JPS6480072A true JPS6480072A (en) 1989-03-24

Family

ID=17022000

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62237894A Pending JPS6480072A (en) 1987-09-21 1987-09-21 Manufacture of image senser integrating tft

Country Status (1)

Country Link
JP (1) JPS6480072A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6600172B1 (en) 1999-11-26 2003-07-29 Nec Corporation Image sensor and method of fabricating the same
JP2013110291A (en) * 2011-11-22 2013-06-06 Japan Display Central Co Ltd Thin film transistor circuit board and method of manufacturing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62171154A (en) * 1986-01-24 1987-07-28 Canon Inc Photosensor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62171154A (en) * 1986-01-24 1987-07-28 Canon Inc Photosensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6600172B1 (en) 1999-11-26 2003-07-29 Nec Corporation Image sensor and method of fabricating the same
JP2013110291A (en) * 2011-11-22 2013-06-06 Japan Display Central Co Ltd Thin film transistor circuit board and method of manufacturing the same

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