ATE77177T1 - Duennfilmtransistor und verfahren zu seiner herstellung. - Google Patents

Duennfilmtransistor und verfahren zu seiner herstellung.

Info

Publication number
ATE77177T1
ATE77177T1 AT86113674T AT86113674T ATE77177T1 AT E77177 T1 ATE77177 T1 AT E77177T1 AT 86113674 T AT86113674 T AT 86113674T AT 86113674 T AT86113674 T AT 86113674T AT E77177 T1 ATE77177 T1 AT E77177T1
Authority
AT
Austria
Prior art keywords
film transistor
manufacture
semiconductor layer
thin film
source
Prior art date
Application number
AT86113674T
Other languages
English (en)
Inventor
Shigeo Aoki
Yasuhiro Ukai
Original Assignee
Hosiden Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP60221666A external-priority patent/JPH0622244B2/ja
Priority claimed from JP60221667A external-priority patent/JPS6281065A/ja
Application filed by Hosiden Corp filed Critical Hosiden Corp
Application granted granted Critical
Publication of ATE77177T1 publication Critical patent/ATE77177T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • G—PHYSICS
    • G02—OPTICS
    • G02C—SPECTACLES; SUNGLASSES OR GOGGLES INSOFAR AS THEY HAVE THE SAME FEATURES AS SPECTACLES; CONTACT LENSES
    • G02C7/00—Optical parts
    • G02C7/02—Lenses; Lens systems ; Methods of designing lenses
    • G02C7/04—Contact lenses for the eyes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Health & Medical Sciences (AREA)
  • Ophthalmology & Optometry (AREA)
  • Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
AT86113674T 1985-10-04 1986-10-03 Duennfilmtransistor und verfahren zu seiner herstellung. ATE77177T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP60221666A JPH0622244B2 (ja) 1985-10-04 1985-10-04 薄膜トランジスタ及びその製造方法
JP60221667A JPS6281065A (ja) 1985-10-04 1985-10-04 薄膜トランジスタ
EP86113674A EP0217406B1 (de) 1985-10-04 1986-10-03 Dünnfilmtransistor und Verfahren zu seiner Herstellung

Publications (1)

Publication Number Publication Date
ATE77177T1 true ATE77177T1 (de) 1992-06-15

Family

ID=26524429

Family Applications (1)

Application Number Title Priority Date Filing Date
AT86113674T ATE77177T1 (de) 1985-10-04 1986-10-03 Duennfilmtransistor und verfahren zu seiner herstellung.

Country Status (5)

Country Link
US (2) US4864376A (de)
EP (1) EP0217406B1 (de)
KR (1) KR900000066B1 (de)
AT (1) ATE77177T1 (de)
DE (1) DE3685623T2 (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE77177T1 (de) * 1985-10-04 1992-06-15 Hosiden Corp Duennfilmtransistor und verfahren zu seiner herstellung.
US4990460A (en) * 1989-01-27 1991-02-05 Nec Corporation Fabrication method for thin film field effect transistor array suitable for liquid crystal display
US5053347A (en) * 1989-08-03 1991-10-01 Industrial Technology Research Institute Amorphous silicon thin film transistor with a depletion gate
JP2976483B2 (ja) * 1990-04-24 1999-11-10 日本電気株式会社 液晶表示素子用薄膜トランジスタの製造方法
US5198694A (en) * 1990-10-05 1993-03-30 General Electric Company Thin film transistor structure with improved source/drain contacts
KR920008834A (ko) * 1990-10-09 1992-05-28 아이자와 스스무 박막 반도체 장치
US5849601A (en) 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
KR950013784B1 (ko) 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
US7576360B2 (en) 1990-12-25 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device which comprises thin film transistors and method for manufacturing the same
US7098479B1 (en) 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
CA2061796C (en) * 1991-03-28 2002-12-24 Kalluri R. Sarma High mobility integrated drivers for active matrix displays
JP3255942B2 (ja) * 1991-06-19 2002-02-12 株式会社半導体エネルギー研究所 逆スタガ薄膜トランジスタの作製方法
KR950003235B1 (ko) * 1991-12-30 1995-04-06 주식회사 금성사 반도체 소자의 구조
JP3378280B2 (ja) * 1992-11-27 2003-02-17 株式会社東芝 薄膜トランジスタおよびその製造方法
US7081938B1 (en) 1993-12-03 2006-07-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
JP3272532B2 (ja) * 1993-12-27 2002-04-08 富士通株式会社 半導体装置の製造方法
US5771110A (en) * 1995-07-03 1998-06-23 Sanyo Electric Co., Ltd. Thin film transistor device, display device and method of fabricating the same
US6790714B2 (en) * 1995-07-03 2004-09-14 Sanyo Electric Co., Ltd. Semiconductor device, display device and method of fabricating the same
JPH09146108A (ja) 1995-11-17 1997-06-06 Semiconductor Energy Lab Co Ltd 液晶表示装置およびその駆動方法
US6800875B1 (en) 1995-11-17 2004-10-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-luminescent display device with an organic leveling layer
TWI228625B (en) 1995-11-17 2005-03-01 Semiconductor Energy Lab Display device
KR100198556B1 (ko) * 1995-11-22 1999-07-01 구자홍 박막트랜지스터의 구조 및 제조방법
TW309633B (de) * 1995-12-14 1997-07-01 Handotai Energy Kenkyusho Kk
JP2757850B2 (ja) * 1996-04-18 1998-05-25 日本電気株式会社 薄膜トランジスタおよびその製造方法
US5913113A (en) * 1997-02-24 1999-06-15 Lg Electronics Inc. Method for fabricating a thin film transistor of a liquid crystal display device
GB9726094D0 (en) * 1997-12-10 1998-02-11 Philips Electronics Nv Thin film transistors and electronic devices comprising such
KR100330096B1 (ko) * 1998-11-27 2002-10-25 삼성전자 주식회사 액정표시장치
US6475836B1 (en) 1999-03-29 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR100524622B1 (ko) * 1999-04-03 2005-11-01 엘지.필립스 엘시디 주식회사 폴리실리콘 반도체층을 포함한 박막트랜지스터 제조방법
US6407617B1 (en) * 1999-11-19 2002-06-18 Matsushita Electric Industrial Co., Ltd. Bias circuit and method of fabricating semiconductor device
US6620719B1 (en) * 2000-03-31 2003-09-16 International Business Machines Corporation Method of forming ohmic contacts using a self doping layer for thin-film transistors
KR101406889B1 (ko) * 2007-12-24 2014-06-13 삼성디스플레이 주식회사 박막트랜지스터 및 그의 제조 방법
JP5363009B2 (ja) * 2008-02-29 2013-12-11 株式会社ジャパンディスプレイ 表示装置およびその製造方法
KR20090108431A (ko) * 2008-04-11 2009-10-15 삼성전자주식회사 표시 기판 및 그 제조 방법
CN103022150B (zh) 2012-12-25 2015-05-20 京东方科技集团股份有限公司 一种薄膜晶体管、其制备方法、阵列基板及显示装置

Family Cites Families (26)

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GB1139170A (en) * 1965-12-22 1969-01-08 Mullard Ltd Thin film transistors
US3616527A (en) * 1968-07-15 1971-11-02 Ncr Co Method of accurately doping a semiconductor material layer
US4040073A (en) * 1975-08-29 1977-08-02 Westinghouse Electric Corporation Thin film transistor and display panel using the transistor
JPS54154289A (en) * 1978-05-26 1979-12-05 Matsushita Electric Ind Co Ltd Manufacture of thin-film transistor array
DE3028718C2 (de) * 1979-07-31 1982-08-19 Sharp K.K., Osaka Dünnfilmtransistor in Verbindung mit einer Anzeigevorrichtung
GB2107115B (en) * 1981-07-17 1985-05-09 Citizen Watch Co Ltd Method of manufacturing insulated gate thin film effect transitors
US4558340A (en) * 1983-06-29 1985-12-10 Stauffer Chemical Company Thin film field effect transistors utilizing a polypnictide semiconductor
US4398340A (en) * 1982-04-26 1983-08-16 The United States Of America As Represented By The Secretary Of The Army Method for making thin film field effect transistors
JPS58218169A (ja) * 1982-06-14 1983-12-19 Seiko Epson Corp 半導体集積回路装置
JPH0693509B2 (ja) * 1983-08-26 1994-11-16 シャープ株式会社 薄膜トランジスタ
JPS6083370A (ja) * 1983-10-14 1985-05-11 Hitachi Ltd 多結晶シリコン薄膜トランジスタ
GB8406330D0 (en) * 1984-03-10 1984-04-11 Lucas Ind Plc Amorphous silicon field effect transistors
JPH0697317B2 (ja) * 1984-04-11 1994-11-30 ホシデン株式会社 液晶表示器
US4727044A (en) * 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
JPS6281057A (ja) * 1985-10-04 1987-04-14 Hosiden Electronics Co Ltd 透明導電膜
ATE77177T1 (de) * 1985-10-04 1992-06-15 Hosiden Corp Duennfilmtransistor und verfahren zu seiner herstellung.
JPS6329977A (ja) * 1986-07-23 1988-02-08 Komatsu Ltd 薄膜トランジスタの製造方法
JP2572379B2 (ja) * 1986-07-31 1997-01-16 株式会社日立製作所 薄膜トランジスタの製造方法
JPS63172469A (ja) * 1987-01-12 1988-07-16 Fujitsu Ltd 薄膜トランジスタ
US4849797A (en) * 1987-01-23 1989-07-18 Hosiden Electronics Co., Ltd. Thin film transistor
US4762398A (en) * 1987-01-26 1988-08-09 Hosiden Electronics Co., Ltd. Pixel transistor free of parasitic capacitance fluctuations from misalignment
US4918504A (en) * 1987-07-31 1990-04-17 Nippon Telegraph And Telephone Corporation Active matrix cell
JPS6449478A (en) * 1987-08-20 1989-02-23 Mitsubishi Electric Corp Synchronizing signal processing circuit
JPS6449473A (en) * 1987-08-20 1989-02-23 Sanyo Electric Co Facsimile equipment
JPH01183853A (ja) * 1988-01-19 1989-07-21 Toshiba Corp 薄膜電界効果トランジスタとその製造方法
JP3198990B2 (ja) * 1997-06-17 2001-08-13 日新電機株式会社 コンデンサ装置

Also Published As

Publication number Publication date
DE3685623D1 (de) 1992-07-16
US5061648A (en) 1991-10-29
EP0217406A2 (de) 1987-04-08
EP0217406A3 (en) 1988-01-07
KR900000066B1 (ko) 1990-01-19
KR870004325A (ko) 1987-05-08
DE3685623T2 (de) 1992-12-24
US4864376A (en) 1989-09-05
EP0217406B1 (de) 1992-06-10

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties