BR9907023A - "dispositivo de célula solar e método de fabricação do mesmo" - Google Patents

"dispositivo de célula solar e método de fabricação do mesmo"

Info

Publication number
BR9907023A
BR9907023A BR9907023-5A BR9907023A BR9907023A BR 9907023 A BR9907023 A BR 9907023A BR 9907023 A BR9907023 A BR 9907023A BR 9907023 A BR9907023 A BR 9907023A
Authority
BR
Brazil
Prior art keywords
solar cell
electrode
semiconductor layer
transparent oxide
cell device
Prior art date
Application number
BR9907023-5A
Other languages
English (en)
Inventor
Shinzo Yanagimachi
Original Assignee
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Watch Co Ltd filed Critical Citizen Watch Co Ltd
Publication of BR9907023A publication Critical patent/BR9907023A/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

"DISPOSITIVO DE CéLULA SOLAR E MéTODO DE FABRICAçãO DO MESMO". Uma célula solar (2) tem uma estrutura de camada múltipla constituída de um substrato de vidro transparente de isolamento (10), um eletrodo de óxido transparente (12), uma camada de tratamento de superfície (14) formada por meio da submissão do eletrodo de óxido transparente (12) ao processamento de plasma oxidante, um filme de azoteto de silício (16), uma camada semicondutora do tipo p (18), uma camada amortecedora (20), uma camada semicondutora intrínseca (22), uma camada semicondutora do tipo N (24), e um eletrodo de metal (26) empilhados nesta ordem. A superfície do eletrodo de óxido transparente (12) é estabilizada quimicamente pela camada de tratamento de superfície (14), aumentando, desta maneira, a voltagem de extremidade aberta.
BR9907023-5A 1998-01-22 1999-01-22 "dispositivo de célula solar e método de fabricação do mesmo" BR9907023A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1007198 1998-01-22
PCT/JP1999/000256 WO1999038216A1 (fr) 1998-01-22 1999-01-22 Dispositif de cellule solaire et son procede de production

Publications (1)

Publication Number Publication Date
BR9907023A true BR9907023A (pt) 2000-10-17

Family

ID=11740150

Family Applications (1)

Application Number Title Priority Date Filing Date
BR9907023-5A BR9907023A (pt) 1998-01-22 1999-01-22 "dispositivo de célula solar e método de fabricação do mesmo"

Country Status (7)

Country Link
US (1) US6333456B1 (pt)
EP (1) EP1050909A4 (pt)
KR (1) KR20010033375A (pt)
CN (1) CN1287690A (pt)
AU (1) AU1983499A (pt)
BR (1) BR9907023A (pt)
WO (1) WO1999038216A1 (pt)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1050909A4 (en) * 1998-01-22 2002-01-30 Citizen Watch Co Ltd SOLAR CELL DEVICE AND ITS PRODUCTION METHOD
KR100374020B1 (ko) * 2000-09-25 2003-02-26 학교법인고려중앙학원 ＩＴＯ／ｎ형 반도체층 계면에서 터널링 접합을 이용한박막 광전지 및 그 제조방법
JP3906182B2 (ja) * 2002-06-21 2007-04-18 アスラブ・エス アー 特に液晶ディスプレイセル又は電気化学光電池である多層セル
US7022247B2 (en) * 2003-03-26 2006-04-04 Union Semiconductor Technology Corporation Process to form fine features using photolithography and plasma etching
US7960646B2 (en) * 2005-08-30 2011-06-14 Kaneka Corporation Silicon-based thin-film photoelectric converter and method of manufacturing the same
JP5470633B2 (ja) * 2008-12-11 2014-04-16 国立大学法人東北大学 光電変換素子及び太陽電池
WO2011006307A1 (zh) * 2009-07-14 2011-01-20 Guo Jianguo 外加电场型光伏电池
CN101699632A (zh) * 2009-10-14 2010-04-28 郭建国 外加电源提供电场效应的薄膜光伏电池
KR101283140B1 (ko) * 2011-01-26 2013-07-05 엘지이노텍 주식회사 태양전지 및 이의 제조방법
CN102332504B (zh) * 2011-04-13 2013-04-10 东旭集团有限公司 提高非晶硅太阳能电池中p型层和i型层界面性能的方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4162505A (en) * 1978-04-24 1979-07-24 Rca Corporation Inverted amorphous silicon solar cell utilizing cermet layers
JPS5846074B2 (ja) * 1979-03-12 1983-10-14 三洋電機株式会社 光起電力装置の製造方法
US4732621A (en) * 1985-06-17 1988-03-22 Sanyo Electric Co., Ltd. Method for producing a transparent conductive oxide layer and a photovoltaic device including such a layer
JPH031577A (ja) * 1990-04-06 1991-01-08 Semiconductor Energy Lab Co Ltd 光電変換装置
JPH06122982A (ja) 1992-10-13 1994-05-06 Matsushita Electric Ind Co Ltd アルミニウムを主成分とする金属薄膜のエッチング液組成物
JPH0851225A (ja) * 1994-08-05 1996-02-20 Mitsui Toatsu Chem Inc 非晶質光電変換装置
JP3164756B2 (ja) 1995-08-30 2001-05-08 京セラ株式会社 多層薄膜回路の形成方法
US5667631A (en) * 1996-06-28 1997-09-16 Lam Research Corporation Dry etching of transparent electrodes in a low pressure plasma reactor
EP1050909A4 (en) * 1998-01-22 2002-01-30 Citizen Watch Co Ltd SOLAR CELL DEVICE AND ITS PRODUCTION METHOD
JP3290186B2 (ja) * 1998-01-28 2002-06-10 シチズン時計株式会社 太陽電池装置の製造方法

Also Published As

Publication number Publication date
US6333456B1 (en) 2001-12-25
CN1287690A (zh) 2001-03-14
EP1050909A4 (en) 2002-01-30
KR20010033375A (ko) 2001-04-25
EP1050909A1 (en) 2000-11-08
WO1999038216A1 (fr) 1999-07-29
AU1983499A (en) 1999-08-09

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Legal Events

Date Code Title Description
TE Change of address
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 5A,6A,7A E 8A ANUIDADES

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO 8.6 PUBLICADO NA RPI 1910 DE 14/08/2007.