KR850002168A - 반도체장치 및 노출층을 이용한 제조공정 - Google Patents
반도체장치 및 노출층을 이용한 제조공정 Download PDFInfo
- Publication number
- KR850002168A KR850002168A KR1019840003082A KR840003082A KR850002168A KR 850002168 A KR850002168 A KR 850002168A KR 1019840003082 A KR1019840003082 A KR 1019840003082A KR 840003082 A KR840003082 A KR 840003082A KR 850002168 A KR850002168 A KR 850002168A
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- temperature
- reducing atmosphere
- oxygen
- elevated temperature
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims 4
- 238000004519 manufacturing process Methods 0.000 title claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 8
- 239000001301 oxygen Substances 0.000 claims 8
- 229910052760 oxygen Inorganic materials 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 6
- 239000002344 surface layer Substances 0.000 claims 6
- 238000010438 heat treatment Methods 0.000 claims 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 4
- 238000001816 cooling Methods 0.000 claims 4
- 239000001257 hydrogen Substances 0.000 claims 4
- 229910052739 hydrogen Inorganic materials 0.000 claims 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 3
- 239000010410 layer Substances 0.000 claims 3
- 239000002244 precipitate Substances 0.000 claims 3
- 229910052786 argon Inorganic materials 0.000 claims 2
- 230000006911 nucleation Effects 0.000 claims 2
- 238000010899 nucleation Methods 0.000 claims 2
- 239000001307 helium Substances 0.000 claims 1
- 229910052734 helium Inorganic materials 0.000 claims 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/023—Deep level dopants
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/024—Defect control-gettering and annealing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Formation Of Insulating Films (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 및 제2도는 본 발명에 따른 노출공정을 도시함, 제3도는 본 발명에 따라 마련된 실리콘 웨이퍼의 단면도.
Claims (9)
- 결합된 산소농도를 갖는 실리콘 웨이퍼를 제공하는 단계와, 상기 웨이퍼 표면의 산소 침전물을 실질적으로 제거하는 동안 환원분위기에서 상승온도로 상기 웨이퍼를 가열시키는 단계로 구성되는 것을 특징으로 하는 실리콘 웨이퍼의 표면층을 노출시키는 공정.
- 제1항에 있어서, 상기 환원분위기는 수소를 포함하는 것을 특징으로 하는 공정.
- 제2항에 있어서, 상기 환원분위기는 아르곤 또는 헬륨으로 희석된 수소를 포함하는 것을 특징으로 하는 공정.
- 약 1.3×1018cm-3결합농도 보다 짙은 산소농도를 갖는 실리콘웨이퍼를 제공하는 단계와, 상기 웨이퍼 표면에 노출층을 생성하기 위해 환원분위기에서 약 1000-12000℃의 온도로 상기 웨이퍼를 가열시키는 단계와, 환원분위기에서 상기 웨이퍼를 냉각시키는 단계로 구성되는 것을 특징으로 한 실리콘 웨이퍼의 표면층을 노출시키는 공정.
- 제4항에 있어서, 환원분위기가 수소 또는 아르곤과 혼합된 수소를 구비한 것을 특징으로 하는 공정.
- 결합된 산소 농도를 갖는 실리콘 기판을 제공하는 단계와, 환원분위기에서 제1상승온도로 상기 기판을 가열하는 단계와, 제1상승온도보다 낮은 제2상승온도로 상기 기판의 온도를 낮추는 단계와, 상기 웨이퍼의 벌크에서 산소침전물의 핵생성을 허락하는 시간동안 제2상승온도로 상기 기판을 유지시키는 단계로 구성된 것을 특징으로 하는 장치 제조용 실리콘 기판을 제공하는 공정.
- 고농도의 산소침전물의 벌크영역과 환원분위기에서 노출된 제1전도형 표면층을 포함한 실리콘 기판과, 상기 표면층의 두께보다 얇은 깊이로 상기 표면층에 형성된 제2전도형영역을 구비하는 것을 특징으로 한 반도체 장치.
- 산소가 결합된 제1전도형 실리콘 웨이퍼를 제공하는 단계와, 상기 웨이퍼에 노출표면층을 형성하도록 충분한 시간동안 환원 분위기에서 약 1000도 내지 1200도의 온도로 상기 웨이퍼를 가열시키고 그리고 상기 웨이퍼의 벌크에서 산소 침전물을 핵형성할 수 있는 600℃ 내지 800℃의 제2온도로 상기 웨이퍼의 온도를 낮추는 단계와, 상기 표면층의 두께보다 얇은 깊이로 상기 노출층에 제2전도형 영역을 형성하는 단계로 구성된 것을 특징으로 하는 반도체 장치 제조공정.
- 산소가 약 1.3×1018cm-3보다 짙은 농도로 결합된 실리콘웨이퍼를 제공하는 단계와, 제1상승온도로 상기 웨이퍼를 가열하는 단계와, 환원분위기에서 약 1-4시간동안 상기 제1상승온도로 가열냉각시키는 단계와 상기 제1상승온도 보다 낮은 제2온도로 상기 웨이퍼를 식히는 단계와, 상기 웨이퍼위에 산화물층을 형성하도록 산화분위기에서 상기 웨이퍼를 제2온도로 유지시키는 단계와, 상기 제2온도보다 낮은 제3온도로 상기 웨이퍼를 식히는 추가단계와, 미소침전물의 핵형성을 위해 충분한 시간동안 상기 웨이퍼를 제3온도로 유지시키는 단계로 구성된 것을 특징으로 한 반도체장치 제조용 실리콘 기판을 제공하는 공정.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US500,735 | 1983-06-03 | ||
US500735 | 1983-06-03 | ||
US06/500,735 US4548654A (en) | 1983-06-03 | 1983-06-03 | Surface denuding of silicon wafer |
Publications (2)
Publication Number | Publication Date |
---|---|
KR850002168A true KR850002168A (ko) | 1985-05-06 |
KR900005782B1 KR900005782B1 (ko) | 1990-08-11 |
Family
ID=23990700
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019840003082A KR900005782B1 (ko) | 1983-06-03 | 1984-06-02 | 실리콘 웨이퍼의 표면층 노출공정 및 그 표면층상에 형성된 반도체장치 |
Country Status (4)
Country | Link |
---|---|
US (1) | US4548654A (ko) |
EP (1) | EP0131717A3 (ko) |
JP (1) | JPH0680673B2 (ko) |
KR (1) | KR900005782B1 (ko) |
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JPS5297666A (en) * | 1976-02-12 | 1977-08-16 | Hitachi Ltd | Production of semiconductor device containing pn junctions |
US4154873A (en) * | 1977-11-10 | 1979-05-15 | Burr-Brown Research Corporation | Method of increasing field inversion threshold voltage and reducing leakage current and electrical noise in semiconductor devices |
US4153486A (en) * | 1978-06-05 | 1979-05-08 | International Business Machines Corporation | Silicon tetrachloride epitaxial process for producing very sharp autodoping profiles and very low defect densities on substrates with high concentration buried impurity layers utilizing a preheating in hydrogen |
FR2435818A1 (fr) * | 1978-09-08 | 1980-04-04 | Ibm France | Procede pour accroitre l'effet de piegeage interne des corps semi-conducteurs |
JPS583375B2 (ja) * | 1979-01-19 | 1983-01-21 | 超エル・エス・アイ技術研究組合 | シリコン単結晶ウエハ−の製造方法 |
JPS5680139A (en) * | 1979-12-05 | 1981-07-01 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
GB2080780B (en) * | 1980-07-18 | 1983-06-29 | Secr Defence | Heat treatment of silicon slices |
US4364779A (en) * | 1980-08-04 | 1982-12-21 | Bell Telephone Laboratories, Incorporated | Fabrication of semiconductor devices including double annealing steps for radiation hardening |
DE3280219D1 (de) * | 1981-03-11 | 1990-08-30 | Fujitsu Ltd | Verfahren zur herstellung einer halbleiteranordnung mit ausgluehen eines halbleiterkoerpers. |
JPS57197827A (en) * | 1981-05-29 | 1982-12-04 | Hitachi Ltd | Semiconductor substrate |
US4437922A (en) * | 1982-03-26 | 1984-03-20 | International Business Machines Corporation | Method for tailoring oxygen precipitate particle density and distribution silicon wafers |
EP0093848A3 (en) * | 1982-05-12 | 1986-03-26 | International Business Machines Corporation | Semiconductor device fabrication process utilizing an added annealing step |
JPS59202640A (ja) * | 1983-05-02 | 1984-11-16 | Toshiba Corp | 半導体ウエハの処理方法 |
-
1983
- 1983-06-03 US US06/500,735 patent/US4548654A/en not_active Expired - Lifetime
-
1984
- 1984-05-22 JP JP59103539A patent/JPH0680673B2/ja not_active Expired - Lifetime
- 1984-05-24 EP EP84105931A patent/EP0131717A3/en not_active Withdrawn
- 1984-06-02 KR KR1019840003082A patent/KR900005782B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH0680673B2 (ja) | 1994-10-12 |
JPS603130A (ja) | 1985-01-09 |
US4548654A (en) | 1985-10-22 |
KR900005782B1 (ko) | 1990-08-11 |
EP0131717A2 (en) | 1985-01-23 |
EP0131717A3 (en) | 1986-07-23 |
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